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13 Jun 2005

Volume 86, Issue 24, Articles (24xxxx)

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Appl. Phys. Lett. 86, 241913 (2005); http://dx.doi.org/10.1063/1.1946181 (3 pages)

E. Placidi, F. Arciprete, V. Sessi, M. Fanfoni, F. Patella, and A. Balzarotti
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Strong photoabsorption by a single-quantum wire in waveguide-transmission spectroscopy

Yasushi Takahashi, Yuhei Hayamizu, Hirotake Itoh, Masahiro Yoshita, Hidefumi Akiyama, Loren N. Pfeiffer, and Ken W. West

Appl. Phys. Lett. 86, 243101 (2005); http://dx.doi.org/10.1063/1.1947902 (3 pages) | Cited 12 times

Online Publication Date: 6 June 2005

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We measured the absorption spectrum of a single T-shaped 14×6 nm lateral-sized quantum wire embedded in an optical waveguide using waveguide-transmission spectroscopy at 5 K. In spite of its small volume, the one-dimensional-exciton ground state shows a large absorption coefficient of 80 cm−1, or a 98% absorption probability for a single pass of the 500 μm long waveguide.
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78.67.Lt Quantum wires
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.35.-y Excitons and related phenomena
78.40.-q Absorption and reflection spectra: visible and ultraviolet

Detection of spin coupling in iron nanoparticles with small angle neutron scattering

Y. Ijiri, C. V. Kelly, J. A. Borchers, J. J. Rhyne, D. F. Farrell, and S. A. Majetich

Appl. Phys. Lett. 86, 243102 (2005); http://dx.doi.org/10.1063/1.1947906 (3 pages) | Cited 12 times

Online Publication Date: 7 June 2005

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Aggregates of monodisperse iron-based nanoparticles were investigated by small-angle neutron scattering. The field dependence of the scattering intensity showed marked differences for particles depending on size and degree of oxidation. The angular dependence of the intensity indicated magnetic regions within an oxidized sample with spins perpendicular to the applied field, which dominated the scattering at the diffraction peak. The unexpected results are interpreted in terms of an iron core that is exchange coupled to an iron oxide shell.
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75.50.Tt Fine-particle systems; nanocrystalline materials
75.25.-j Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source x-ray scattering, etc.)
75.30.Et Exchange and superexchange interactions
75.75.-c Magnetic properties of nanostructures
81.65.Mq Oxidation

Synthesis and field emission properties of TiSi2 nanowires

B. Xiang, Q. X. Wang, Z. Wang, X. Z. Zhang, L. Q. Liu, J. Xu, and D. P. Yu

Appl. Phys. Lett. 86, 243103 (2005); http://dx.doi.org/10.1063/1.1948515 (3 pages) | Cited 31 times

Online Publication Date: 7 June 2005

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TiSi2 is a high-melting compound with excellent conductivity ∼ several μΩ cm. TiSi2 nanowires were fabricated in large scale by a simple vapor phase deposition method. The as-synthesized TiSi2 nanowires were investigated using x-ray diffraction, scanning electron microscopy, transmission electron microscopy, and Raman scattering. Field emission property of TiSi2 nanowires was studied and an emission current density of 5 mA/cm2 was obtained and no obvious degradation was observed in a life stability experiment period for over ∼ 40 h. The cathodoluminescence images were very bright and homogenous. The remarkable performance reveals that the TiSi2 nanowires can serve as a good candidate for commercial application in vacuum microelectronic devices, particularly flat panel displays.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
79.70.+q Field emission, ionization, evaporation, and desorption
81.16.-c Methods of micro- and nanofabrication and processing
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.63.-b Electronic transport in nanoscale materials and structures
78.60.Hk Cathodoluminescence, ionoluminescence
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures

Self-assembly of Ge quantum dots on Si(100)-2×1 by pulsed laser deposition

M. S. Hegazy and H. E. Elsayed-Ali

Appl. Phys. Lett. 86, 243104 (2005); http://dx.doi.org/10.1063/1.1949285 (3 pages) | Cited 5 times

Online Publication Date: 8 June 2005

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Self-assembled Ge quantum dots are grown on Si(100)-2×1 by pulsed laser deposition. The growth is studied by in situ reflection high-energy electron diffraction and postdeposition atomic force microscopy. After the completion of the wetting layer, transient hut clusters, faceted by different planes, are observed. When the height of these clusters exceeded a certain value, the facets developed into {305} planes. Some of these huts become {305}-faceted pyramids as the film mean thickness was increased. With further thickness increase, dome clusters developed on the expense of these pyramids.
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81.07.Ta Quantum dots
81.05.Cy Elemental semiconductors
81.15.Fg Pulsed laser ablation deposition
68.65.Hb Quantum dots (patterned in quantum wells)
68.55.-a Thin film structure and morphology

Patterning of confined-state energies in site-controlled semiconductor quantum dots

S. Watanabe, E. Pelucchi, K. Leifer, A. Malko, B. Dwir, and E. Kapon

Appl. Phys. Lett. 86, 243105 (2005); http://dx.doi.org/10.1063/1.1944891 (3 pages) | Cited 7 times

Online Publication Date: 9 June 2005

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We demonstrate control of the confined-state energies of semiconductor quantum dots (QDs) grown on prepatterned substrates. The InGaAs/AlGaAs QDs self-order at the apex of self-limiting, inverted pyramids whose locations are fixed by lithography. The confinement energy in the dots is systematically varied across the substrate by changing the pattern of the pyramid array in their vicinity. The resulting energy- and site-controlled QDs show systematic and reproducible shifts of their emission wavelengths as well as antibunched photon emissions from confined single excitons. Such QDs should be useful for applications in quantum information processing and quantum communication devices, e.g., multiple-wavelength single-photon emitters.
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81.05.Ea III-V semiconductors
81.07.Ta Quantum dots
78.67.Hc Quantum dots
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
71.35.-y Excitons and related phenomena
85.40.Hp Lithography, masks and pattern transfer
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