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27 Jun 2005

Volume 86, Issue 26, Articles (26xxxx)

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Appl. Phys. Lett. 86, 263107 (2005); http://dx.doi.org/10.1063/1.1952585 (3 pages)

B. Yang, M. S. Marcus, D. G. Keppel, P. P. Zhang, Z. W. Li, B. J. Larson, D. E. Savage, J. M. Simmons, O. M. Castellini, M. A. Eriksson, and M. G. Lagally
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Influence of grain sizes on the mobility of organic thin-film transistors

A. Di Carlo, F. Piacenza, A. Bolognesi, B. Stadlober, and H. Maresch

Appl. Phys. Lett. 86, 263501 (2005); http://dx.doi.org/10.1063/1.1954901 (3 pages) | Cited 85 times

Online Publication Date: 21 June 2005

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A mobility model for organic thin-film transistors (OTFTs) has been considered that fully accounts for the effect of grains and grain boundaries of the organic layer. The model has been applied to a top contact pentacene OTFT. Comparison between simulation results and experimental data shows a strong dependence of mobility as a function of grain size. The field-effect-extracted mobility is not linearly related to the grain size, but presents a rather abrupt reduction for a grain size smaller than 2 μm.
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85.30.Tv Field effect devices

High-efficiency top-emissive white-light-emitting organic electrophosphorescent devices

Hiroshi Kanno, Yiru Sun, and Stephen R. Forrest

Appl. Phys. Lett. 86, 263502 (2005); http://dx.doi.org/10.1063/1.1947376 (3 pages) | Cited 100 times

Online Publication Date: 22 June 2005

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We demonstrate an efficient, top-emissive, white-light-emitting organic device (WOLED) employing the phosphorescent emitters, tris-(1-(4,6-difluorophenyl)pyridinato,N,C2′)iridium(III) and iridium(III) bis(2-phenyl quinolyl-N,C2′)acetylacetonate combining a sputtered Ni anode and an ITO cathode. The electron transport layer is doped with Li for efficient electron injection from the cathode, thereby also avoiding strong microcavity effects. The operating voltage is substantially reduced compared with a top-emissive device with an undoped electron transport layer. Peak external quantum and power efficiencies of 10.5±1.0% and 9.8±1.0 lm/W are achieved at current densities of 1.6 and 1.0 mA/cm2, respectively. The emission is characterized by Commission Internationale de L’Eclairage coordinates of (x = 0.42, y = 0.39). The top-emissive device, useful for generating full color images when combined with color filters or for display backlights, exhibits characteristics competitive with those of a bottom-emission WOLED using the same multilayer structure.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence

Soliton transistor

Farshid Raissi

Appl. Phys. Lett. 86, 263503 (2005); http://dx.doi.org/10.1063/1.1957108 (3 pages) | Cited 5 times

Online Publication Date: 22 June 2005

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An all soliton transistor is introduced which uses a train of soliton-like vortices inside long Josephson junctions to turn off the movement of another train of vortices. In our practical realization, a long Josephson junction injects vortices into a reverse-biased Josephson fluxonic diode, corresponding to the ON state of the transistor. Injecting antivortices through a third long junction annihilates vortices before they could reach the Josephson fluxonic diode. This corresponds to the OFF state. Experimental results on the successful operation of this transistor as a NOT gate are provided.
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85.25.Cp Josephson devices
85.25.Hv Superconducting logic elements and memory devices; microelectronic circuits
03.75.Lm Tunneling, Josephson effect, Bose-Einstein condensates in periodic potentials, solitons, vortices, and topological excitations

Pseudo-metal-base transistor with high gain

Michelle S. Meruvia, Adriano R. V. Benvenho, Ivo A. Hümmelgen, André A. Pasa, and Walther Schwarzacher

Appl. Phys. Lett. 86, 263504 (2005); http://dx.doi.org/10.1063/1.1952569 (3 pages) | Cited 15 times

Online Publication Date: 22 June 2005

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We use evaporated C60 fullerene as emitter, a conducting polymer blend as base, and Si as collector in a vertical transistor structure similar to a metal-base transistor. The conducting polymer blend used as a base is poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate). The measured common-base current gain of our pseudo-metal-base transistor (p-MBT) is close to 1.0. The p-MBT is straightforward to fabricate and is compatible with conventional Si-based electronics.
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85.30.Pq Bipolar transistors

Reversible and irreversible trapping at room temperature in poly(thiophene) thin-film transistors

A. Salleo, F. Endicott, and R. A. Street

Appl. Phys. Lett. 86, 263505 (2005); http://dx.doi.org/10.1063/1.1968437 (3 pages) | Cited 77 times

Online Publication Date: 23 June 2005

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We measured the bias stress characteristics of poly(thiophene) semicrystalline thin-film transistors (TFTs) as a function stress times, gate voltages, and duty cycles. At room temperature, the bias stress has two components: a fast reversible component and a slow long-lived component. We hypothesize that the irreversible component is due to charge trapping in the disordered areas of the semiconductor film. At low duty cycle (<2%), the fast bias stress component is reversed during the off-part of the cycle therefore the observed threshold voltage (VT) shift is only caused by long-lived trapping. Long-lived trapping follows power-law kinetics with a time exponent approximately equal to 0.37. We use these findings to estimate the lifetime of TFTs used as switches in display backplanes.
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85.30.Tv Field effect devices
42.79.Kr Display devices, liquid-crystal devices
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