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27 Jun 2005

Volume 86, Issue 26, Articles (26xxxx)

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Appl. Phys. Lett. 86, 263107 (2005); http://dx.doi.org/10.1063/1.1952585 (3 pages)

B. Yang, M. S. Marcus, D. G. Keppel, P. P. Zhang, Z. W. Li, B. J. Larson, D. E. Savage, J. M. Simmons, O. M. Castellini, M. A. Eriksson, and M. G. Lagally
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Dynamics of domain inversion in LiNbO3 poled using topographic electrode geometries

Benjamin F. Johnston and Michael J. Withford

Appl. Phys. Lett. 86, 262901 (2005); http://dx.doi.org/10.1063/1.1952574 (3 pages)

Online Publication Date: 22 June 2005

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We report results of an investigation studying the domain inversion kinetics of lithium niobate when electric field poling using laser-machined topographical electrodes. Inversion is shown to begin with a single nucleation spike and the domains evolve in a unique fashion governed by the topographical structure. We also demonstrate control of the resulting domain widths when poling using this technique. The results presented have implications for rapid prototyping of chirped and aperiodic domain structures in lithium niobate.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
42.70.-a Optical materials

Visible-ultraviolet spectroscopic ellipsometry of lead zirconate titanate thin films

Hosun Lee, Youn Seon Kang, Sang-Jun Cho, Bo Xiao, Hadis Morkoç, and Tae Dong Kang

Appl. Phys. Lett. 86, 262902 (2005); http://dx.doi.org/10.1063/1.1968432 (3 pages) | Cited 4 times

Online Publication Date: 22 June 2005

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We measured pseudodielectric functions in the visible-ultraviolet spectral range of Pb(ZrxTi1−x)O3 (x = 0.2, 0.56, 0.82) (PZT) grown on platinized silicon substrate using the sol-gel method and also on (0001) sapphire using radio frequency sputtering method. Using a parametric optical constant model, we estimated the dielectric functions of the PZT thin films. Taking the second derivative of the fitted layer dielectric functions and using the standard critical point model, we determined the parameters of the critical points. In the second derivative spectra, the lowest bandgap energy peak near 4 eV is fitted as a double peak for annealed PZTs associated with the perovskite phase. As-grown PZTs have mainly pyrochlore phase and the lowest bandgap is fitted as a single peak. We compared the bandgap energies with literature values.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
78.40.Ha Other nonmetallic inorganics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Nk Insulators
77.22.Ch Permittivity (dielectric function)
68.55.A- Nucleation and growth
81.15.Cd Deposition by sputtering
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
81.40.Gh Other heat and thermomechanical treatments

“Dielectric relaxor” behavior of electroactive fluorinated polymers

Chen Ang and Zhi Yu

Appl. Phys. Lett. 86, 262903 (2005); http://dx.doi.org/10.1063/1.1948518 (3 pages) | Cited 8 times

Online Publication Date: 22 June 2005

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The dielectric spectra of poly(vinylidene fluoride-trifluoroethylene) copolymers and poly(vinylidene fluoride-trifluoroethylene-chlorotrifluoroethylene) terpolymers are studied in a wide temperature and frequency range with electric field. It is found that the dominant relaxation process displays a peculiar characteristic—a “dielectric relaxor” behavior, rather than a “ferroelectric relaxor” behavior reported in the current literature; furthermore, we show the experimental observation that the existence of nanometer scale crystals embedded in an amorphous matrix is the base of the dielectric relaxor behavior and high electroactive performance in these polymers.
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77.84.Jd Polymers; organic compounds
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
77.22.Gm Dielectric loss and relaxation
77.22.Ej Polarization and depolarization

Manganese-modified BiScO3–PbTiO3 piezoelectric ceramic for high-temperature shear mode sensor

Shujun Zhang, Richard E. Eitel, Clive A. Randall, Thomas R. Shrout, and Edward F. Alberta

Appl. Phys. Lett. 86, 262904 (2005); http://dx.doi.org/10.1063/1.1968419 (3 pages) | Cited 47 times

Online Publication Date: 22 June 2005

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The bismuth-based perovskite solid solution (100−x)BiScO3−xPbTiO3 (BSPT) was investigated for use at temperatures up to 400 °C and above. The high-temperature resistivity, together with dielectric and piezoelectric behaviors of the shear mode for manganese-modified BSPT ceramics near the morphotropic phase boundary composition were studied. The resistivity and time constant were found to be 3×107 Ω cm and 0.08 s, respectively, at 450 °C for modified BSPT66. The dielectric constant Κ11T and dielectric loss were found to be 1112 and 1%, respectively, at room temperature, showing a Curie temperature at 468 °C. The electromechanical coupling factor k15 was calculated to be 61%, staying nearly constant up to 440 °C, expanding the temperature usage range significantly. The properties indicate that the modified BSPT66 material is a promising candidate for high-temperature shear sensor applications.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.Bn Piezoelectric and electrostrictive constants
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
77.80.B- Phase transitions and Curie point

Enhanced tetragonality in (x)PbTiO3-(1−x)Bi(Zn1/2Ti1/2)O3 and related solid solution systems

Matthew R. Suchomel and Peter K. Davies

Appl. Phys. Lett. 86, 262905 (2005); http://dx.doi.org/10.1063/1.1978980 (3 pages) | Cited 97 times

Online Publication Date: 23 June 2005

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The solid solutions (x)PbTiO3-(1−x)Bi(Zn1/2Ti1/2)O3, (x)PbTiO3-(1−x)Bi(Zn1/2Zn1/2)O3, and (x)PbTiO3-(1−x)Bi(Zn1/2Sn1/2)O3, have been examined by x-ray diffraction, dielectric measurements, and thermal analysis. Unlike most PbTiO3-based solid solutions, these systems show enhanced tetragonality with substitution for PbTiO3. In particular, the (x)PbTiO3-(1−x)Bi(Zn1/2Ti1/2)O3 system exhibits a high c/a ratio of 1.11 for x = 0.60. Accordingly, the Curie temperature (TC) also increases, exceeding 700 °C at the same composition. It is proposed that PbTiO3-Bi(B)O3-type solid solutions which contain only highly polarizable cations on the B site are likely to exhibit similar enhancements in tetragonality and TC.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.B- Phase transitions and Curie point
61.66.Fn Inorganic compounds

Chemical phase transitions of the HfO2/SiON/Si nanolaminate by high-temperature thermal treatments in NO and O2 ambient

J. H. Oh, Y. Park, K.-S. An, Y. Kim, J. R. Ahn, J. Y. Baik, and C. Y. Park

Appl. Phys. Lett. 86, 262906 (2005); http://dx.doi.org/10.1063/1.1957110 (3 pages) | Cited 3 times

Online Publication Date: 23 June 2005

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Temperature-dependent chemical phase transitions of the HfO2/SiON/Si(100) nanolaminate in O2 and NO ambient have been investigated using high-resolution photoemission spectroscopy. Hf 4f, Si 2p, O 1s, and N 1s photoemission spectra were measured after annealing the nanolaminate at a temperature between 750 and 1150 °C. These spectra show that the chemical phase transitions of the nanolaminate strongly dependend on the ambient gases. The nanolaminate in an O2 ambient is stable below 750 °C but the HfO2 and SiON layers dissociate by producing Hf silicides above 950 °C. In contrast, the nanolaminate in NO ambient does not transit into Hf silicides up to 1050 °C. Interestingly, the HfO2 and SiON layers transforms into HfOxNy and SiNx layers, respectively, with a high thermal stability, where the HfOxNy layers are a high-k dielectric material and the SiNx layers work as a barrier against both Si and O diffusion
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81.05.Mh Cermets, ceramic and refractory composites
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
64.70.K- Solid-solid transitions
81.40.Gh Other heat and thermomechanical treatments
79.60.Jv Interfaces; heterostructures; nanostructures
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
68.35.Fx Diffusion; interface formation

Identification of a determining parameter for resistive switching of TiO2 thin films

Christina Rohde, Byung Joon Choi, Doo Seok Jeong, Seol Choi, Jin-Shi Zhao, and Cheol Seong Hwang

Appl. Phys. Lett. 86, 262907 (2005); http://dx.doi.org/10.1063/1.1968416 (3 pages) | Cited 146 times

Online Publication Date: 23 June 2005

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Electric-pulse-induced resistive switching of 43 nm thick TiO2 thin films grown by metalorganic chemical vapor deposition was studied by current-voltage (I-V) and constant voltage-time measurements. The resistance ratio between the two stable states of the film constitutes approximately 1000. The allowed current level and voltage step width during the sweep mode I-V measurements influenced switching parameters, such as the switching voltage, time before switching, and resistance values. However, it was clearly observed that the power imparted to the film controlled mainly switching. The required power for successful switching was almost invariant irrespective of other measurement variables.
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81.05.-t Specific materials: fabrication, treatment, testing, and analysis
73.61.Ng Insulators
68.55.A- Nucleation and growth
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Overpoling-induced property degradation in Pb(Mg1/3Nb2/3)O3–PbTiO3 single crystals of near-morphotropic phase boundary compositions

M. Shanthi, K. H. Hoe, C. Y. H. Lim, and L. C. Lim

Appl. Phys. Lett. 86, 262908 (2005); http://dx.doi.org/10.1063/1.1957114 (3 pages) | Cited 11 times

Online Publication Date: 24 June 2005

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Overpoling phenomenon has been observed in flux-grown Pb(Mg1/3Nb2/3)O3–(31–32)%PbTiO3 single crystals when poled above 0.4 kV/mm at room temperature. This leads to increased property variations at intermediate poling fields (0.6–0.8 kV/mm) and to the degradation of piezoelectric properties at high poling fields ( ≥ 1.0 kV/mm). In comparison, both PMN–28%PT and PMN–30%PT crystal compositions are resistant to overpoling, of which PMN–30%PT exhibits superior dielectric and piezoelectric properties with KT ≈ 7500–9000, d33 ≈ 2200–2500 pC/N, and d31 ≈ 1100–1400 pC/N. The electromechanical coupling factors (k33 = 0.90–0.94; k31 = 0.48–0.55, and kt = 0.58–0.62) are relatively insensitive to the poling field and crystal composition.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
77.65.Bn Piezoelectric and electrostrictive constants
77.22.Ch Permittivity (dielectric function)

Effective electromechanical moduli of ferroelectric ceramics with fiber textures

Y. C. Zhou, J. Liu, and J. Y. Li

Appl. Phys. Lett. 86, 262909 (2005); http://dx.doi.org/10.1063/1.1952584 (3 pages) | Cited 5 times

Online Publication Date: 24 June 2005

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In this letter, we report the predictions on the effective piezoelectric coefficients and electromechanical coupling factors of ferroelectric ceramics BaTiO3 and Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN-PT) with various fiber textures, including [001], [011], and [111], using a two-scale micromechanical model that accounts for microstructural phenomena at both domain and grain levels. It was observed that for BaTiO3 the [011] texture is optimal with highest d31 and d33, while for PMN-PT [001] texture is optimal despite the fact that [011]-oriented single-crystalline PMN-PT has higher d32 than that of [001]-oriented PMN-PT single crystal. In fact, [011]-textured PMN-PT ceramics have much smaller piezoelectric coefficients d32 and d33 than does [011]-oriented PMN-PT single crystal. It is also noted that [001]-textured BaTiO3 and PMN-PT ceramics have even higher electromechanical coupling factor k31 than that of [001]-oriented single crystals.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.Bn Piezoelectric and electrostrictive constants
77.80.-e Ferroelectricity and antiferroelectricity
61.72.-y Defects and impurities in crystals; microstructure
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity

Nanoscale polarization relaxation in a polycrystalline ferroelectric thin film: Role of local environments

V. Nagarajan, S. Aggarwal, A. Gruverman, R. Ramesh, and R. Waser

Appl. Phys. Lett. 86, 262910 (2005); http://dx.doi.org/10.1063/1.1977183 (3 pages) | Cited 20 times

Online Publication Date: 24 June 2005

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In this letter, we report on the study of nanoscale polarization relaxation phenomena in polycrystalline PbZr0.4Ti0.6O3 films. Piezoresponse force microscopy (PFM) images of the as-grown sample reveal grains with a range of contrast, from fully white to gray to fully black. It is shown that this local change in the contrast (magnitude) of the piezoresponse from grain to grain can be attributed to the crystallographic orientation within each grain. PFM-based relaxation experiments show that the rate of relaxation is different for each grain, furthermore it is strongly dependent on the tilt of individual crystallographic orientation with respect to the polar axis. Strongly tilted away nonpolar axis grains show a much stronger decay of the polarization compared to polar axis-oriented grains. Therefore, for an ensemble of grains under a common top electrode, the relaxation events would first take place in grains, which are nonpolar axis oriented.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.22.Ej Polarization and depolarization
77.22.Gm Dielectric loss and relaxation
77.80.-e Ferroelectricity and antiferroelectricity
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