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27 Jun 2005

Volume 86, Issue 26, Articles (26xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 86, 263107 (2005); http://dx.doi.org/10.1063/1.1952585 (3 pages)

B. Yang, M. S. Marcus, D. G. Keppel, P. P. Zhang, Z. W. Li, B. J. Larson, D. E. Savage, J. M. Simmons, O. M. Castellini, M. A. Eriksson, and M. G. Lagally
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Microfluidic tunable dye laser with integrated mixer and ring resonator

J. C. Galas, J. Torres, M. Belotti, Q. Kou, and Y. Chen

Appl. Phys. Lett. 86, 264101 (2005); http://dx.doi.org/10.1063/1.1968421 (3 pages) | Cited 36 times

Online Publication Date: 22 June 2005

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We report on results of design and fabrication of a microfluidic dye laser that consists of a ring resonator, a waveguide for laser emission output, and microfluidic elements for flow control, all integrated on a chip. The optical resonator and the waveguide were obtained by photolithography, whereas microfluidic elements such as channels, valves, and pumps were fabricated by multilayer soft lithography. As results, the prototype device worked with a few nanoliters of Rhodamine 6G dye molecules in ethanol solution and showed a laser threshold of ∼ 15 μJ/mm2 when optically pumped with a frequency doubled Nd:YAG laser at 532 nm wavelength. The modification of the laser output intensity due to photobleaching effect was characterized by changing the dye flow velocity through the cavity. In addition, the emission wavelength of the laser could be easily tuned by changing the dye molecule concentration with the integrated microfluidic elements.
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42.60.By Design of specific laser systems
42.55.Mv Dye lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.82.Bq Design and performance testing of integrated-optical systems
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.60.Fc Modulation, tuning, and mode locking
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
85.40.Hp Lithography, masks and pattern transfer

Ponderomotive electron acceleration using surface plasmon waves excited with femtosecond laser pulses

S. E. Irvine and A. Y. Elezzabi

Appl. Phys. Lett. 86, 264102 (2005); http://dx.doi.org/10.1063/1.1946202 (3 pages) | Cited 20 times

Online Publication Date: 22 June 2005

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We report on the ponderomotive acceleration of electrons using surface plasmon (SP) waves launched on Ag and Au films. High-energy electrons, up to 2 keV, are generated in the high spatial gradient of the SP field. Acceleration gradients of ∼ 8 GeV/m are produced using 30 GW/cm2, 800 nm amplified 30 fs laser pulses. Investigation of the photoemission characteristics of these metal films reveals a distinct transition between the multiphoton regime and a laser-induced field emission regime. Results of the experiment are in good agreement with those predicted with test particle code, which is based on finite-difference time-domain simulation and incorporates the Drude dielectric function and photoemission properties of the metallic films.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
79.60.Bm Clean metal, semiconductor, and insulator surfaces
78.66.Bz Metals and metallic alloys
78.47.-p Spectroscopy of solid state dynamics
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
77.22.Ch Permittivity (dielectric function)

Role of a native oxide on femtosecond laser interaction with silicon (100) near the damage threshold

Joel P. McDonald, Arthur A. McClelland, Yoosuf N. Picard, and Steven M. Yalisove

Appl. Phys. Lett. 86, 264103 (2005); http://dx.doi.org/10.1063/1.1946916 (3 pages) | Cited 6 times

Online Publication Date: 22 June 2005

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Si (100) with and without a 14–25 Å thick native oxide was laser machined at grazing incidence using a Ti:sapphire femtosecond pulsed laser under ultrahigh vacuum conditions. The resulting damage feature size and morphology indicate that the presence or absence of the native oxide significantly affects the mechanism for femtosecond laser-induced damage. We propose that a fluence-dependent modification of the oxide by the incident laser pulse must be considered when studying femtosecond laser damage of Si (100) with a native oxide. Data are also presented that are consistent with a dose-dependent phase transformation in the amorphous oxide. The implications of the native oxide, including relative damage thresholds of the underlying Si (100) and the role of the oxide in damage morphology are addressed.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
81.65.-b Surface treatments
78.47.-p Spectroscopy of solid state dynamics
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Fk Semiconductors
79.20.Ds Laser-beam impact phenomena
64.70.K- Solid-solid transitions

In vacuo measurements of dangling bonds created during Ar-diluted fluorocarbon plasma etching of silicon dioxide films

Kenji Ishikawa, Mitsuru Okigawa, Yasushi Ishikawa, Seiji Samukawa, and Satoshi Yamasaki

Appl. Phys. Lett. 86, 264104 (2005); http://dx.doi.org/10.1063/1.1978982 (3 pages) | Cited 11 times

Online Publication Date: 23 June 2005

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Dangling bond creation processes during fluorocarbon plasma etching of silicon dioxide (SiO2) films were studied using an in vacuo electron spin resonance technique. In a range of about 10 nm underneath the interface of the SiO2 films with an amorphous fluorinated carbon film that was top-covered, a Si dangling bond in the films (E′ center, g value 2.0003) was located. Density of the E′ center was sustained during etching processes created by the illumination of vacuum ultraviolet emissions, higher photon energy than the bandgap of SiO2. The etching mechanism in this system is discussed taking into account the experimental results.
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71.55.Ht Other nonmetals
76.30.Mi Color centers and other defects
52.77.Bn Etching and cleaning
81.65.Cf Surface cleaning, etching, patterning
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Ms Insulators
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