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10 Jan 2005

Volume 86, Issue 2, Articles (02xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 86, 021101 (2005); http://dx.doi.org/10.1063/1.1849439 (3 pages)

H. W. Choi, C. W. Jeon, C. Liu, I. M. Watson, M. D. Dawson, P. R. Edwards, R. W. Martin, S. Tripathy, and S. J. Chua
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Direct observation of interstitial molecular N2 in Si oxynitrides

Youngsu Chung, Jae Cheol Lee, and H. J. Shin

Appl. Phys. Lett. 86, 022901 (2005); http://dx.doi.org/10.1063/1.1851620 (3 pages) | Cited 16 times

Online Publication Date: 4 January 2005

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High-resolution near edge x-ray absorption spectroscopy and x-ray photoelectron spectroscopy were used to characterize ultrathin plasma-nitrided silicon oxides. The direct observation of interstitial molecular N2 was made by vibrationally resolved N K-edge absorption spectroscopy. The N2 molecules were trapped during the plasma nitridation at the near surface and could be eliminated by annealing via molecular out-diffusion.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.J- Point defects and defect clusters
78.70.Dm X-ray absorption spectra
79.60.Bm Clean metal, semiconductor, and insulator surfaces
79.60.Dp Adsorbed layers and thin films
81.40.Gh Other heat and thermomechanical treatments
81.65.Lp Surface hardening: nitridation, carburization, carbonitridation

Experimental evidence of correctness of improved model of ferroelectric planar capacitor

O. G. Vendik, S. V. Razumov, A. V. Tumarkin, M. A. Nikol’skii, M. M. Gaidukov, and A. G. Gagarin

Appl. Phys. Lett. 86, 022902 (2005); http://dx.doi.org/10.1063/1.1847691 (3 pages) | Cited 7 times

Online Publication Date: 4 January 2005

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Planar capacitors, consisting of a thin ( ≈ 1 μm) ferroelectric film and a dielectric substrate, widely used at microwaves, are normally designed on the basis of the conformal mapping technique and the use of the traditional formula for electric field in the capacitor gap: E = U/s. U is applied voltage and s is the width of the gap. The important characteristic of the planar capacitor is its tunability defined as n = C(0)/C(U). The dependence of the tunability on the ferroelectric film thickness (hf) has been experimentally investigated. The saturation or feebly marked maximum on the dependence of n on hf was observed. The appearance of the maximum can be explained using the corrected formula for the field in the gap: E ≅ U/(s+hf). The formula was earlier theoretically developed on the basis of minimization of the free energy accumulated in the planar capacitor and using the Ginzburg–Devonshire equation for the nonlinear polarization of the ferroelectric film. The result should be considered as a correction of the model of a planar capacitor based on the conformal mapping technique.
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84.32.Tt Capacitors
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
77.80.B- Phase transitions and Curie point
77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
68.55.-a Thin film structure and morphology

Retention properties of fully integrated (Bi,La)4Ti3O12 capacitors and their lateral size effects

D. J. Kim, J. Y. Jo, Y. W. So, B. S. Kang, T. W. Noh, Jong-Gul Yoon, T. K. Song, K. H. Noh, S.-S. Lee, S.-H. Oh, K.-N. Lee, S.-K. Hong, and Y.-J. Park

Appl. Phys. Lett. 86, 022903 (2005); http://dx.doi.org/10.1063/1.1843285 (3 pages) | Cited 9 times

Online Publication Date: 5 January 2005

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We investigated the retention characteristics of (Bi,La)4Ti3O12 (BLT) capacitors and their lateral size effects in a fully integrated device structure. Unlike the commonly used Pb(Zr,Ti)O3 capacitors for ferroelectric random access memories (FeRAMs), which have poor opposite-state retention characteristics, BLT capacitors showed very stable characteristics in both the same- and the opposite-state retention tests. These good retention properties were closely related to the small amount of imprint in the BLT capacitors. In addition, the retention characteristics of BLT capacitors showed no practical degradation due to the size reduction, down to 0.49×0.64 μm2, which could be used for highly integrated FeRAMs of 32 MB density.
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84.32.Tt Capacitors
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.55.-g Dielectric thin films
77.80.Dj Domain structure; hysteresis
77.22.Gm Dielectric loss and relaxation

The effective electromechanical coupling coefficient of piezoelectric thin-film resonators

Qingming Chen and Qing-Ming Wang

Appl. Phys. Lett. 86, 022904 (2005); http://dx.doi.org/10.1063/1.1850615 (3 pages) | Cited 10 times

Online Publication Date: 5 January 2005

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The input electric impedance Zin for a three-layer thin-film bulk acoustic wave resonator is derived by transfer matrix method to describe the resonator behavior. Based on the impedance spectra, the effective coupling coefficient keff2 of a thin-film resonator can be evaluated with respect to the resonator structure and thin-film properties. The results for both AlN and lead zirconate titanate thin-film resonators reveal that the mechanical Q factor of the thin-film piezoelectric material has a significant effect on the effective coupling coefficient keff2 of the device. keff2 decreases with theincrease of the mechanical quality factor Q. A maximum keff2 value can be obtained at an appropriate thickness ratio of electrode/piezoelectric layers.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.65.Fs Electromechanical resonance; quartz resonators
77.65.Bn Piezoelectric and electrostrictive constants
77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Large electrostriction near the solubility limit in BaTiO3–CaTiO3 ceramics

Xusheng Wang, Hiroshi Yamada, and Chao-Nan Xu

Appl. Phys. Lett. 86, 022905 (2005); http://dx.doi.org/10.1063/1.1850598 (3 pages) | Cited 40 times

Online Publication Date: 5 January 2005

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This study prepared (1−x)BaTiO3–xCaTiO3 (x = 0.20–1.0) ceramics. Their structural and electric properties were analyzed. High electrostrictive strain of 0.22%, higher by 157% as compared to BaTiO3 ceramic, was obtained near the solubility limit in the side of composite (x = 0.23), which is a diphasic ceramic composed of a ferroelectric tetragonal Ba0.8Ca0.2TiO3 solid solution and a normal dielectric orthorhombic Ba0.07Ca0.93TiO3 solid solution. This enhanced electrostriction resulted from the coupling of the large ionic polarization in Ba0.07Ca0.93TiO3 with the non-180° domains in Ba0.8Ca0.2TiO3 during the external electric field exertion.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.Bn Piezoelectric and electrostrictive constants
64.75.-g Phase equilibria
77.22.Ch Permittivity (dielectric function)
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization

Nanoscale surface domain formation on the +z face of lithium niobate by pulsed ultraviolet laser illumination

C. E. Valdivia, C. L. Sones, J. G. Scott, S. Mailis, R. W. Eason, D. A. Scrymgeour, V. Gopalan, T. Jungk, E. Soergel, and I. Clark

Appl. Phys. Lett. 86, 022906 (2005); http://dx.doi.org/10.1063/1.1849414 (3 pages) | Cited 25 times

Online Publication Date: 6 January 2005

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Single-crystal congruent lithium niobate samples have been illuminated on the +z crystal face by pulsed ultraviolet laser wavelengths below (248 nm) and around (298–329 nm) the absorption edge. Following exposure, etching with hydrofluoric acid reveals highly regular precise domain-like features of widths ∼ 150–300 nm, exhibiting distinct three-fold symmetry. Examination of illuminated unetched areas by scanning force microscopy shows a corresponding contrast in piezoelectric response. These observations indicate the formation of nanoscale ferroelectric surface domains, whose depth has been measured via focused ion beam milling to be ∼ 2 μm. We envisage this direct optical poling technique as a viable route to precision domain-engineered structures for waveguide and other surface applications.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
68.35.B- Structure of clean surfaces (and surface reconstruction)
79.20.Ds Laser-beam impact phenomena
61.82.Ms Insulators
77.65.Bn Piezoelectric and electrostrictive constants
81.65.Cf Surface cleaning, etching, patterning
68.37.Ps Atomic force microscopy (AFM)

Self-poled Pb(Zr,Ti)O3 films with improved pyroelectric properties via the use of (La0.8Sr0.2)MnO3/metal substrate heterostructures

M. Es-Souni, M. Kuhnke, S. Iakovlev, C.-H. Solterbeck, and A. Piorra

Appl. Phys. Lett. 86, 022907 (2005); http://dx.doi.org/10.1063/1.1851610 (3 pages) | Cited 8 times

Online Publication Date: 6 January 2005

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Pb(Zr,Ti)O3 (PZT) thin films were deposited on different substrate heterostructures including platinized silicon, stainless steel and Ni-based alloy foils. A buffer layer of (La0.8Sr0.2)MnO3 (LSMO) between PZT and substrate was used. The pyroelectric coefficients were determined using low frequency sinusoidal temperature waves. It is demonstrated that PZT films deposited on metallic foils exhibit high pyroelectric coefficients of up to 760 μC/Km2 in the unpoled state, whereas the films deposited on platinized substrates were found to have pyroelectric coefficients in the range of 30 μC/Km2. These results are explained in terms of elemental diffusion from the substrate together with stressed states of the films.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.70.+a Pyroelectric and electrocaloric effects
68.55.-a Thin film structure and morphology

Terahertz wave generation and propagation in thin-film lithium niobate produced by crystal ion slicing

David W. Ward, Eric R. Statz, Keith A. Nelson, Ryan M. Roth, and Richard M. Osgood

Appl. Phys. Lett. 86, 022908 (2005); http://dx.doi.org/10.1063/1.1850185 (3 pages) | Cited 12 times

Online Publication Date: 6 January 2005

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Terahertz phonon-polariton generation and real-space imaging with femtosecond optical pulses are demonstrated in a 10‐μm-thick film of single-crystalline lithium niobate that was generated through crystal ion slicing. The film dispersion properties were characterized throughout the polariton wavelength range of 5–100 μm, revealing substantial slab waveguide behavior at the longer wavelengths.
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84.40.Az Waveguides, transmission lines, striplines
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
78.47.-p Spectroscopy of solid state dynamics
77.55.-g Dielectric thin films
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)

Lead barium zirconate perovskite films for electrically tunable applications

Mei-Hai Wu and Jenn-Ming Wu

Appl. Phys. Lett. 86, 022909 (2005); http://dx.doi.org/10.1063/1.1852714 (3 pages) | Cited 13 times

Online Publication Date: 6 January 2005

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Lead barium zirconate (PBZ) thin films were deposited on Pt∕Ti∕SiO2∕Si substrates by spincoating sol-gel precursor solutions to fabricate films for electrically tunable device applications. Randomly oriented (Pb1−xBax)ZrO3 cubic perovskite films with x = 0.4, 0.6, and 0.8 were formed after heat treating at 600 °C–750 °C. The results demonstrated that the (Pb0.6Ba0.4)ZrO3 film possessed promising tunable dielectric properties as measured at 1 MHz. The (Pb0.6Ba0.4)ZrO3 film heat treated at 750 °C has a dielectric dissipation factor (tan δ) of 0.007 and a dielectric tunability of 43%. The figure of merit of the (Pb0.6Ba0.4)ZrO3 film is 61.43, which is comparable with the foremost investigated (BaSr)TiO3 films.
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77.55.-g Dielectric thin films
77.22.-d Dielectric properties of solids and liquids
68.60.Dv Thermal stability; thermal effects
81.40.Tv Optical and dielectric properties related to treatment conditions
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