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10 Jan 2005

Volume 86, Issue 2, Articles (02xxxx)

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Appl. Phys. Lett. 86, 021101 (2005); http://dx.doi.org/10.1063/1.1849439 (3 pages)

H. W. Choi, C. W. Jeon, C. Liu, I. M. Watson, M. D. Dawson, P. R. Edwards, R. W. Martin, S. Tripathy, and S. J. Chua
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Imaging surface-acoustic fields in a longitudinal leaky wave resonator

O. Holmgren, J. V. Knuuttila, T. Makkonen, K. Kokkonen, V. P. Plessky, W. Steichen, M. Solal, and M. M. Salomaa

Appl. Phys. Lett. 86, 024101 (2005); http://dx.doi.org/10.1063/1.1849814 (3 pages) | Cited 7 times

Online Publication Date: 30 December 2004

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Acoustic wave fields in a surface-acoustic-wave resonator employing the longitudinal leaky wave mode have been imaged using a scanning Michelson laser interferometer. The synchronous one-port resonator is fabricated on YZ-cut lithium niobate. The vibration amplitude component perpendicular to the surface has been measured at several frequencies around the fundamental-mode resonance frequency of 1.54 GHz and around the Rayleigh-wave resonance frequency of 0.82 GHz. The longitudinal beating pattern, typically observed in the resonators utilizing Rayleigh waves, is not observed in the longitudinal leaky surface acoustic-wave resonator within the measured frequency range.
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Fluid pumped by magnetic stress

Robert Krauß, Bert Reimann, Reinhard Richter, Ingo Rehberg, and Mario Liu

Appl. Phys. Lett. 86, 024102 (2005); http://dx.doi.org/10.1063/1.1846956 (3 pages) | Cited 5 times

Online Publication Date: 30 December 2004

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A magnetic field rotating on the free surface of a ferrofluid layer is shown to induce considerable fluid motion toward the direction the field is rolling. The measured flow velocity (i) increases with the square of the magnetic field amplitude, (ii) is proportional to the thickness of the fluid layer, and (iii) has a maximum at a driving frequency of about 3 kHz. The pumping speed can be estimated with a two-dimensional flow model.
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75.50.Mm Magnetic liquids
47.65.-d Magnetohydrodynamics and electrohydrodynamics
47.60.-i Flow phenomena in quasi-one-dimensional systems
47.32.-y Vortex dynamics; rotating fluids
47.11.-j Computational methods in fluid dynamics

Microfluidic interferometer

P. Domachuk, C. Grillet, V. Ta’eed, E. Mägi, J. Bolger, B. J. Eggleton, L. E. Rodd, and J. Cooper-White

Appl. Phys. Lett. 86, 024103 (2005); http://dx.doi.org/10.1063/1.1849415 (3 pages) | Cited 21 times

Online Publication Date: 3 January 2005

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We present a class of compact, fluid-based, interferometric, tunable optical components: the single-beam microfluidic Mach–Zender interferometer. Phase delay is achieved through light propagation across a fluid–air interface (meniscus). The effect of meniscus curvature on the device transmission is considered using the three-dimensional beam propagation method and shown to be an important device parameter. We engineer the meniscus curvature using monomer surface chemistry, rendering it flat, and find that the experimental response corresponds well with simulation. The device has a resonance at 1.3 μm with a 25 dB extinction ratio; the latter can be adjusted by shifting the meniscus position.
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07.60.Ly Interferometers

Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics

M. Scharnberg, J. Hu, J. Kanzow, K. Rätzke, R. Adelung, F. Faupel, C. Pannemann, U. Hilleringmann, S. Meyer, and J. Pflaum

Appl. Phys. Lett. 86, 024104 (2005); http://dx.doi.org/10.1063/1.1849845 (3 pages) | Cited 20 times

Online Publication Date: 5 January 2005

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The metallization of organic thin films is a crucial point in the development of molecular electronics. However, there is no method established yet to detect trace amounts of metal atoms in those thin films. Radiotracer measurements can quantify even very small amounts of material penetrating into the bulk, in our case less than 0.01% of a monolayer. Here, the application of this technique on two different well-characterized organic thin film systems (diindenoperylene and pentacene) is demonstrated. The results show that Ag is mainly adsorbed on the surface, but indicate that already at moderate deposition temperatures Ag can penetrate into the organic thin films and agglomerate at the film/substrate interface.
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82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods
68.43.Mn Adsorption kinetics
85.30.Tv Field effect devices
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
85.65.+h Molecular electronic devices
68.55.Nq Composition and phase identification
68.55.-a Thin film structure and morphology

Toward ultracompact pseudospark switches

Chunqi Jiang, Andras Kuthi, and Martin A. Gundersen

Appl. Phys. Lett. 86, 024105 (2005); http://dx.doi.org/10.1063/1.1852080 (3 pages) | Cited 4 times

Online Publication Date: 5 January 2005

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This letter reports studies of small pseudospark switches wherein the volume is reduced by one order of magnitude relative to the smallest previously reported versions operating with a peak current >1 kA. In preliminary testing, the switch holds off >20 kV with a peak current >4 kA and a pulse duration of 150 ns. The switch was operated in an optically triggered mode (backlighted thyratron) with helium fill for >106 discharges at 13.5 kV and 3.3 kA, with 0.5 mC transfer per pulse, at a repetition rate of 10 Hz without significant decay of switch performance. Preliminary observations indicate that the device operates in a superemissive cathode mode, demonstrating a pathway towards ultracompact superemissive cathode switches for repetitive pulsed power applications.
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84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
84.47.+w Vacuum tubes

Controlled n-type doping of AlN:Si films grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy

Tommy Ive, Oliver Brandt, Helmar Kostial, Klaus J. Friedland, Lutz Däweritz, and Klaus H. Ploog

Appl. Phys. Lett. 86, 024106 (2005); http://dx.doi.org/10.1063/1.1850183 (3 pages) | Cited 29 times

Online Publication Date: 5 January 2005

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We study the properties of Si-doped AlN films grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy. Whereas nominally undoped AlN films are invariably insulating in nature, Si-doped films are found to be semiconducting with an electron concentration up to 7.4×1017 cm−3, and a resistivity approaching 1 Ω cm at room temperature. Even heavy Si-doping (1×1020 cm−3) does not degrade the structural properties of the AlN films. The morphology of these films is characterized by Si-induced step-bunching, but remains smooth with a rms roughness of about 1 nm.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.uj III-V and II-VI semiconductors
68.55.-a Thin film structure and morphology
73.61.Ey III-V semiconductors
61.72.S- Impurities in crystals
68.35.B- Structure of clean surfaces (and surface reconstruction)

Radiation efficiency of water-window Cherenkov sources using atomic-shell resonances

A. E. Kaplan and P. L. Shkolnikov

Appl. Phys. Lett. 86, 024107 (2005); http://dx.doi.org/10.1063/1.1850190 (3 pages)

Online Publication Date: 5 January 2005

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A simple evaluation of the yield of Cherenkov radiation generated by relativistic electrons in the vicinity of atomic-shell resonances located in the water window x-ray domain is developed and applied to all the promising elements, including L-shell resonances explored recently by Knulst et al. [Appl. Phys. Lett. 83, 4050 (2003)] , and K-shell resonance in liquid nitrogen proposed here. Our theoretical results compare favorably with experimental data. The feasibility of a related Cherenkov laser is also studied.
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41.60.Bq Cherenkov radiation
07.85.Fv X- and γ-ray sources, mirrors, gratings, and detectors
41.60.Cr Free-electron lasers

Synthesis of well-aligned ZnO nanowires by simple physical vapor deposition on c-oriented ZnO thin films without catalysts or additives

Lisheng Wang, Xiaozhong Zhang, Songqing Zhao, Guoyuan Zhou, Yueliang Zhou, and Junjie Qi

Appl. Phys. Lett. 86, 024108 (2005); http://dx.doi.org/10.1063/1.1851607 (3 pages) | Cited 67 times

Online Publication Date: 6 January 2005

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Well-aligned ZnO nanowires were synthesized by simple physical vapor deposition using c-oriented ZnO thin films as substrates without catalysts or additives. The synthesized ZnO nanowires have two typical average diameters: 60 nm in majority and 120 nm in minority. They are about 4 μm in length and well aligned along the normal direction of the substrate. Most of the synthesized ZnO nanowires are single crystalline in a hexagonal structure and grow along the [001] direction. The c-oriented ZnO thin films control the growth direction. Photoluminescence spectrum was measured showing a single strong ultraviolet emission (380 nm). Such result indicates that the ZnO nanowire arrays can be applied to excellent optoelectronic devices.
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81.05.Dz II-VI semiconductors
81.07.Bc Nanocrystalline materials
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
78.55.Et II-VI semiconductors
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