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17 Jan 2005

Volume 86, Issue 3, Articles (03xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 86, 033101 (2005); http://dx.doi.org/10.1063/1.1851002 (3 pages)

Kun Chen, Allen Taflove, Young L. Kim, and Vadim Backman
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Millimeter wave mixing using plasmon and bolometric response in a double-quantum-well field-effect transistor

Mark Lee, M. C. Wanke, and J. L. Reno

Appl. Phys. Lett. 86, 033501 (2005); http://dx.doi.org/10.1063/1.1851606 (3 pages) | Cited 25 times

Online Publication Date: 7 January 2005

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Heterodyne mixing characteristics of a double-quantum-well field-effect transistor (DQW FET) from 94 to 145 GHz are reported. The DQW FET exhibits two physically distinct mixing responses. Near pinch-off, the device behaves as a broadband bolometric mixer with intermediate frequency (IF) bandwidth of 620 MHz. Away from pinch-off it shows an electrically tunable resonant plasmon response. Mixing on a plasmon resonance yields an IF with significant harmonic distortion, signaling a complicated nonlinear mechanism, and shows a wide IF bandwidth >2 GHz.
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85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.30.Tv Field effect devices
84.40.-x Radiowave and microwave (including millimeter wave) technology
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Demonstration of low-cost Si-based tunable long-wavelength resonant-cavity-enhanced photodetectors

R. W. Mao, Y. H. Zuo, C. B. Li, B. W. Cheng, X. G. Teng, L. P. Luo, J. Z. Yu, and Q. M. Wang

Appl. Phys. Lett. 86, 033502 (2005); http://dx.doi.org/10.1063/1.1852712 (3 pages) | Cited 7 times

Online Publication Date: 10 January 2005

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A simple process for fabricating low-cost Si-based continuously tunable long-wavelength resonant-cavity-enhanced (RCE) photodetectors has been investigated. High-contrast SiO2∕Si(Δn ∼ 2) was employed as mirrors to eliminate the need to grow thick epitaxial distributed Bragg reflectors. Such high-reflectivity SiO2∕Si mirrors were deposited on the as-grown InGaAs epitaxy layers, and then were bonded to silicon substrates at a low temperature of 350 °C without any special treatment on bonding surfaces, employing silicate gel as the bonding medium. The cost is thus decreased. A thermally tunable Si-based InGaAs RCE photodetector operating at 1.3–1.6 μm was obtained, with a quantum efficiency of about 44% at the resonant wavelength of 1476 nm and a tuning range of 14.5 nm. It demonstrates a great potential for industry processes.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.50.Pz Photoconduction and photovoltaic effects

Extremely low-voltage driving of organic light-emitting diodes with a Cs-doped phenyldipyrenylphosphine oxide layer as an electron-injection layer

Takahito Oyamada, Hiroyuki Sasabe, Chihaya Adachi, Seiichiro Murase, Tsuyoshi Tominaga, and Chiharu Maeda

Appl. Phys. Lett. 86, 033503 (2005); http://dx.doi.org/10.1063/1.1852707 (3 pages) | Cited 41 times

Online Publication Date: 11 January 2005

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We demonstrated efficient electron injection and transport in organic light-emitting diodes using an electron-transport layer (ETL) composed of a Cs and phenyldipyrenylphosphine oxide (POPy2) co-deposited layer. In particular, an ETL composed of a Cs:POPy2 layer with an atom:molar ratio of 1:2 demonstrated an extremely low driving voltage, resulting in a high current density of 100 mA/cm2 at an applied voltage of only 3.9 V. The results of Kelvin probe and absorption measurements indicated that the formation of a CsAl alloy layer at the Cs:POPy2/Al cathode interface and the charge-transfer complex between the Cs and POPy2 contributed to enhancing the efficiency of electron injection and transport, respectively.
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73.63.-b Electronic transport in nanoscale materials and structures
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials

Orientation-dependent strain tolerance of amorphous silicon transistors and pixel circuits for elastic organic light-emitting diode displays

Peyman Servati and Arokia Nathan

Appl. Phys. Lett. 86, 033504 (2005); http://dx.doi.org/10.1063/1.1852729 (3 pages) | Cited 8 times

Online Publication Date: 12 January 2005

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We examine the orientation dependence of strain-induced shifts in current and mobility of hydrogenated amorphous silicon thin-film transistors (TFTs). Longitudinal and transverse TFT mirrors are presented for design of strain-tolerant ΔVT-compensating pixel driver circuits for active-matrix organic light-emitting diode displays.
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85.30.Tv Field effect devices
85.60.Jb Light-emitting devices
85.60.Pg Display systems
73.50.Dn Low-field transport and mobility; piezoresistance

Functional characteristics in asymmetric source/drain InAlAsSb/InGaAs/InP δ-doped high electron mobility transistor

Ching-Sung Lee and Wei-Chou Hsu

Appl. Phys. Lett. 86, 033505 (2005); http://dx.doi.org/10.1063/1.1855387 (3 pages)

Online Publication Date: 12 January 2005

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See Also: RETRACTION

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Functional characteristics, comprising enhance-mode linear amplification performance and N-shaped negative-differential resistance phenomenon, have been observed in an inverted δ-doped In0.34Al0.66As0.85Sb0.15/In0.75Ga0.25As/InP high electron mobility transistor with the asymmetric source/drain terminal structure. Unpassivated peak performances, including the transconductance of 268 mS/mm and saturation drain current density of 210 mA/mm, and significant negative differential resistance characteristics, including the peak-to-valley current ratio of 6.1, can be obtained on the same device by switching the source/drain electrical connection. The electric field aspects of the asymmetry in the contacts have also been investigated.
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85.30.Tv Field effect devices
73.40.Ns Metal-nonmetal contacts
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Natural hydrogen treatment effect during formation of double amorphous silicon-carbide p layer structures producing high-efficiency pin-type amorphous silicon solar cells

Seung Yeop Myong and Koeng Su Lim

Appl. Phys. Lett. 86, 033506 (2005); http://dx.doi.org/10.1063/1.1853492 (3 pages) | Cited 11 times

Online Publication Date: 13 January 2005

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We proposed a double p-type amorphous silicon-carbide (p‐a‐SiC:H) layer structure to improve the p/i interface of pin-type amorphous silicon based solar cells. We found a natural hydrogen treatment involving an etch of the defective undiluted p‐a‐SiC:H window layer before the hydrogen-diluted p‐a‐SiC:H buffer layer deposition and an improvement of the order in the window layer. It is beneficial to increase overall solar cell parameters by successfully reducing recombination at the p/i interface.
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84.60.Jt Photoelectric conversion
81.65.Cf Surface cleaning, etching, patterning

Nanoparticles: An approach to controlling an electro-optical behavior of nematic liquid crystals

David Sikharulidze

Appl. Phys. Lett. 86, 033507 (2005); http://dx.doi.org/10.1063/1.1855416 (3 pages) | Cited 33 times

Online Publication Date: 14 January 2005

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We report an orientational effect in suspension of nematic liquid crystal (NLC) with solid nanoparticles, controlled by the optically “hidden” electrophoretic effect: electrophoretically controlled nematic (EPCN). Adding the nanoparticles results in an additional phenomenon in conventionally designed NLC cell: polarity-controlled bistable/multistable switching. The EPCN is based on the nature of an interaction of nanoparticles with LC molecules and not on specific fabrication technology, which makes it applicable to various current LC displays technologies and gives a big opportunity to produce low power consumption high informative displays, including low cost large scale flexible displays.
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42.79.Kr Display devices, liquid-crystal devices
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
78.20.Jq Electro-optical effects
85.60.Pg Display systems
42.65.Pc Optical bistability, multistability, and switching, including local field effects
82.70.Kj Emulsions and suspensions

Ultrasound radiating performances of piezoelectric micromachined ultrasonic transmitter

Zhihong Wang, Weiguang Zhu, Ooi Kiang Tan, Chen Chao, Hong Zhu, and Jianmin Miao

Appl. Phys. Lett. 86, 033508 (2005); http://dx.doi.org/10.1063/1.1855417 (3 pages) | Cited 5 times

Online Publication Date: 14 January 2005

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This letter reports on a membrane-type piezoelectric micromachined ultrasonic transducer (pMUT). It consists of 3.5 or 7 μm thick composite lead zirconate titanate (PZT) film on a multilayered membrane and works as an ultrasonic transmitter. The ultrasound-radiating performance of the transmitter, in response to a continuous ac driving voltage, has been tested systematically. The generated sound pressure level at resonance frequency of the transmitter varies with the applied dc bias and driving voltage and can exceed 110 dB at a measuring distance of 12 mm. For a given square membrane with the same multilayer structure and thickness, the resonance frequency of the transmitter is inversely proportional to the area of the membrane, and can be further tuned by control of the poling conditions of the PZT film or the applied dc bias.
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43.38.Fx
43.38.Hz
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.22.Ej Polarization and depolarization
77.55.-g Dielectric thin films
07.10.Cm Micromechanical devices and systems
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