APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

17 Jan 2005

Volume 86, Issue 3, Articles (03xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 86, 033101 (2005); http://dx.doi.org/10.1063/1.1851002 (3 pages)

Kun Chen, Allen Taflove, Young L. Kim, and Vadim Backman
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Corner overgrowth: Bending a high mobility two-dimensional electron system by 90°

M. Grayson, D. Schuh, M. Huber, M. Bichler, and G. Abstreiter

Appl. Phys. Lett. 86, 032101 (2005); http://dx.doi.org/10.1063/1.1851010 (3 pages) | Cited 14 times

Online Publication Date: 7 January 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Introducing an epitaxial growth technique called corner overgrowth, we fabricate a quantum confinement structure consisting of a high-mobility GaAs/AlGaAs heterojunction overgrown on top of an ex situ cleaved substrate corner. The resulting corner-junction quantum-well heterostructure effectively bends a two-dimensional electron system (2DES) at an atomically sharp 90° angle. The high-mobility 2DES demonstrates fractional quantum Hall effect on both facets. Lossless edge-channel conduction over the corner confirms a continuum of 2D electrons across the junction, consistent with Hartree calculations of the electron distribution. This growth technique differs distinctly from cleaved-edge overgrowth and enables a complementary class of embedded quantum heterostructures.
Show PACS
81.07.St Quantum wells
73.63.Hs Quantum wells
68.65.Fg Quantum wells
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Electrical properties of polycrystalline SrSi2

Motoharu Imai, Takashi Naka, Takao Furubayashi, Hideki Abe, Takao Nakama, and Katsuma Yagasaki

Appl. Phys. Lett. 86, 032102 (2005); http://dx.doi.org/10.1063/1.1849423 (3 pages) | Cited 15 times

Online Publication Date: 7 January 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The electrical properties of polycrystalline SrSi2 were examined by electrical resistivity measurements at temperatures ranging from 2 to 760 K and Hall coefficient measurements at temperatures ranging from 10 to 300 K. These measurements revealed that SrSi2 is a narrow-gap semiconductor with an energy gap of 0.035 eV whose dominant carriers are holes.
Show PACS
72.20.My Galvanomagnetic and other magnetotransport effects
72.20.Fr Low-field transport and mobility; piezoresistance
72.80.Jc Other crystalline inorganic semiconductors

Influence of the gate leakage current on the stability of organic single-crystal field-effect transistors

R. W. I. de Boer, N. N. Iosad, A. F. Stassen, T. M. Klapwijk, and A. F. Morpurgo

Appl. Phys. Lett. 86, 032103 (2005); http://dx.doi.org/10.1063/1.1852089 (3 pages) | Cited 27 times

Online Publication Date: 7 January 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We investigate the effect of a small leakage current through the gate insulator on the stability of organic single-crystal field-effect transistors (FETs). We find that, irrespective of the specific organic molecule and dielectric used, leakage current flowing through the gate insulator results in an irreversible degradation of the single-crystal FET performance. This degradation occurs even when the leakage current is several orders of magnitude smaller than the source-drain current. The experimental data indicate that a stable operation requires the leakage current to be smaller than 10−9 A/cm2. Our results also suggest that gate leakage currents may determine the lifetime of thin-film transistors used in applications.
Show PACS
85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Fr Low-field transport and mobility; piezoresistance

Bismuth ion-implanted solid-phase epitaxially grown shallow junction for metal–oxide–semiconductor field-effect transistors

Shahram Ghanad Tavakoli, Sungkweon Baek, Hyo Sik Chang, Dae Won Moon, and Hyunsang Hwang

Appl. Phys. Lett. 86, 032104 (2005); http://dx.doi.org/10.1063/1.1852731 (3 pages) | Cited 1 time

Online Publication Date: 7 January 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A shallow, low-resistive solid phase epitaxially regrown n+/p junction was investigated for sub-70 nm metal–oxide–semiconductor field-effect transistors (MOSFETs), using bismuth (Bi) ion-implantation and low temperature rapid thermal annealing. Bi-doped specimens showed a shallow junction depth of ∼ 15 nm (at a background concentration of 5×1018 cm−3), low sheet resistance, and leakage current at low temperature processing (700 °C). The results indicated that Bi could be a proper dopant for low temperature activated source and drain extensions that are fabricated at low temperatures with the implementation of high-κ dielectric and metal–electrode gate stacks in next generation MOSFETs.
Show PACS
78.40.Fy Semiconductors
81.15.Np Solid phase epitaxy; growth from solid phases

Growth of ZnO/MgZnO quantum wells on sapphire substrates and observation of the two-dimensional confinement effect

B. P. Zhang, N. T. Binh, K. Wakatsuki, C. Y. Liu, Y. Segawa, and N. Usami

Appl. Phys. Lett. 86, 032105 (2005); http://dx.doi.org/10.1063/1.1850594 (3 pages) | Cited 60 times

Online Publication Date: 7 January 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
ZnO/MgZnO single quantum wells (QWs) in which the well width changes continuously were grown on sapphire (11math0) substrates by metalorganic chemical vapor deposition. Photoluminescence (PL) measurement revealed two emission peaks: one is position dependent and the other is not. Polarized PL spectra obtained from cleaved facets demonstrated perfect two-dimensional features of the position-dependent emission peak. The position-dependent peak was attributed to emissions due to excitons confined in the ZnO well layer, and the position-independent peak was attributed to emissions due to excitons in MgZnO barrier layers. The width dependence of the emission energy from the ZnO QW was interpreted by a simple theoretical model. Typical PL decay time of the QW emission was 360 ps at 77 K. It was shorter than that of the MgZnO barrier, 470 ps, due to the enhanced confinement effect in the QW.
Show PACS
81.07.St Quantum wells
81.05.Dz II-VI semiconductors
68.65.Fg Quantum wells
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.21.Fg Quantum wells
78.67.De Quantum wells
78.55.Et II-VI semiconductors

Electromagnetically induced transparency in alkali atoms integrated on a semiconductor chip

H. Schmidt and A. R. Hawkins

Appl. Phys. Lett. 86, 032106 (2005); http://dx.doi.org/10.1063/1.1853528 (3 pages) | Cited 5 times

Online Publication Date: 10 January 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We analyze the integration of electromagnetically induced transparency in alkali atoms on a semiconductor chip. We propose the use of antiresonant reflecting optical waveguides with hollow cores to realize the necessary waveguiding capability and optical mode areas of a few square micrometers. We derive the scaling laws and limitations for the reduction in group velocity and single-photon phase shifts as a function of waveguide dimension. We show that miniaturization leads to a large enhancement of single-photon cross-phase modulation, despite the presence of additional limitations due to coherence dephasing and waveguide loss.
Show PACS
42.82.Et Waveguides, couplers, and arrays
42.50.Gy Effects of atomic coherence on propagation, absorption, and amplification of light; electromagnetically induced transparency and absorption
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
42.79.Gn Optical waveguides and couplers
51.70.+f Optical and dielectric properties

Intense terahertz laser fields on a two-dimensional electron gas with Rashba spin–orbit coupling

J. L. Cheng and M. W. Wu

Appl. Phys. Lett. 86, 032107 (2005); http://dx.doi.org/10.1063/1.1852732 (3 pages) | Cited 16 times

Online Publication Date: 11 January 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The spin-dependent density of states and the density of spin polarization of an InAs-based two-dimensional electron gas with the Rashba spin–orbit coupling under an intense terahertz laser field are investigated by utilizing the Floquet states to solve the time-dependent Schrödinger equation. It is found that both densities are strongly affected by the terahertz laser field. Especially a terahertz magnetic moment perpendicular to the external terahertz laser field in the electron gas is induced. This effect can be used to convert terahertz electric signals into terahertz magnetic ones efficiently.
Show PACS
73.21.Fg Quantum wells
73.20.At Surface states, band structure, electron density of states
61.82.Fk Semiconductors
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
72.25.Dc Spin polarized transport in semiconductors

Suppression of intrinsic bistability in resonant-tunneling diode by in-plane magnetic field

A. Yu. Serov and G. G. Zegrya

Appl. Phys. Lett. 86, 032108 (2005); http://dx.doi.org/10.1063/1.1853515 (3 pages) | Cited 3 times

Online Publication Date: 12 January 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Using the Bardeen formalism, we calculated the electron tunneling through a double barrier structure with an in-plane magnetic field. It is shown that the in-plane magnetic field has two effects on the current–voltage characteristics. First, it reduces the width of the bistable region. At high magnetic fields, the bistability can be completely suppressed. This can provide a method for tuning the bistable region in a double barrier structure. Second, it modifies the peak current. The dependence of the peak current on the magnetic field is different in the cases of high and low electron concentrations in the quantum well.
Show PACS
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling
73.63.Hs Quantum wells
85.30.De Semiconductor-device characterization, design, and modeling

III-nitride metal-insulator-semiconductor heterojunction field-effect transistors using sputtered AlON thin films

Y. Cai, Y. G. Zhou, K. J. Chen, and K. M. Lau

Appl. Phys. Lett. 86, 032109 (2005); http://dx.doi.org/10.1063/1.1855403 (3 pages) | Cited 7 times

Online Publication Date: 12 January 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
In this letter, a III-nitride metal-insulator-semiconductor heterostructure field-effect transistors (MISHFET) was demonstrated by incorporating a sputtered AlON layer in the AlGaN/GaN heterostructure field-effect transistors (HFET). The AlON layer was deposited on the HFET structure by magnetron sputtering, followed by rapid thermal annealing at 850 °C for 45 s. A reverse gate leakage current that is four orders of magnitude lower was obtained in the MISHFET, compared to that in HFET. The MISHFET also shows 20% increase in the drain saturation current. For a MISHFET with 1‐μm-long gate, the current gain cutoff frequency, ft and the power gain cutoff frequency, fmax are measured to be 13 and 37 GHz, respectively.
Show PACS
85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.72.Cc Kinetics of defect formation and annealing

Tunneling effects and intersubband absorption in AlN/GaN superlattices

E. Baumann, F. R. Giorgetta, D. Hofstetter, H. Wu, W. J. Schaff, L. F. Eastman, and L. Kirste

Appl. Phys. Lett. 86, 032110 (2005); http://dx.doi.org/10.1063/1.1849418 (3 pages) | Cited 14 times

Online Publication Date: 13 January 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on intersubband absorption and photovoltage measurements on regular GaN/AlN-based superlattice structures. For barrier thicknesses larger than about 25 Å, the optical intersubband absorption peaks at a considerably smaller energy than the photovoltage spectrum. A simple model taking into account the oscillator strength of the involved transitions and the corresponding tunneling probabilities agrees with the experimental findings. According to this model, the observed photovoltage is the macroscopic manifestation that the two-dimensional electron gas at the top of the superlattice changes its carrier density by a vertical transport of electrons.
Show PACS
73.21.Cd Superlattices
73.40.Gk Tunneling
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
73.50.Pz Photoconduction and photovoltaic effects
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
73.63.Hs Quantum wells
68.65.Cd Superlattices
68.65.Fg Quantum wells
73.21.Fg Quantum wells

Electrical properties of ZnO nanowire field effect transistors characterized with scanning probes

Zhiyong Fan and Jia G. Lu

Appl. Phys. Lett. 86, 032111 (2005); http://dx.doi.org/10.1063/1.1851621 (3 pages) | Cited 52 times

Online Publication Date: 13 January 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Single ZnO nanowires are configured as field effect transistors and their electrical properties are characterized using scanning probe microscopy (SPM). Scanning surface potential microscopy is used to map the electric potential distribution on the nanowire. Potential drop along the nanowire and at the contacts are resolved, and contact resistances are estimated. Furthermore, conductive SPM tip is used as a local gate to manipulate the electrical property. The local change of electron density induced by a negatively biased tip significantly affects the current transport through the nanowire.
Show PACS
85.30.Tv Field effect devices
85.35.−p
74.30.Cg
68.37.−d

Real-time monitoring and process control in amorphous∕crystalline silicon heterojunction solar cells by spectroscopic ellipsometry and infrared spectroscopy

Hiroyuki Fujiwara and Michio Kondo

Appl. Phys. Lett. 86, 032112 (2005); http://dx.doi.org/10.1063/1.1850612 (3 pages) | Cited 25 times

Online Publication Date: 13 January 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
In amorphous∕crystalline silicon heterojunction solar cells, we have performed real-time thickness control of hydrogenated amorphous silicon (a‐Si:H) layers with a precision better than ±1 Å by applying spectroscopic ellipsometry (SE). A heterojunction solar cell fabricated by this process shows a relatively high conversion efficiency of 14.5%. At the amorphous∕crystalline interface, however, infrared attenuated total reflection spectroscopy (ATR) revealed the formation of a porous a‐Si:H layer with a large SiH2-hydrogen content of 27 at. %. Based on SE and ATR results, we discuss the growth processes and structures of a‐Si:H in heterojunction solar cells.
Show PACS
84.60.Jt Photoelectric conversion
78.30.Am Elemental semiconductors and insulators
68.35.B- Structure of clean surfaces (and surface reconstruction)
78.66.Db Elemental semiconductors and insulators

Spin-polarized reflection in a two-dimensional electron system

Hong Chen, J. J. Heremans, J. A. Peters, A. O. Govorov, N. Goel, S. J. Chung, and M. B. Santos

Appl. Phys. Lett. 86, 032113 (2005); http://dx.doi.org/10.1063/1.1849413 (3 pages) | Cited 25 times

Online Publication Date: 14 January 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present a method to create spin-polarized beams of ballistic electrons in a two-dimensional electron system in the presence of spin–orbit interaction. Scattering of a spin-unpolarized injected beam from a lithographic barrier leads to the creation of two fully spin-polarized side beams, in addition to an unpolarized specularly reflected beam. Experimental magnetotransport data on InSb/InAlSb heterostructures demonstrate the spin-polarized reflection in a mesoscopic geometry.
Show PACS
72.25.Dc Spin polarized transport in semiconductors
73.23.Ad Ballistic transport
72.25.Mk Spin transport through interfaces
72.25.Rb Spin relaxation and scattering
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
75.47.-m Magnetotransport phenomena; materials for magnetotransport
73.40.Cg Contact resistance, contact potential
73.50.Fq High-field and nonlinear effects
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close