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17 Jan 2005

Volume 86, Issue 3, Articles (03xxxx)

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Appl. Phys. Lett. 86, 033101 (2005); http://dx.doi.org/10.1063/1.1851002 (3 pages)

Kun Chen, Allen Taflove, Young L. Kim, and Vadim Backman
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Photonic quasicrystal single-cell cavity mode

Sun-Kyung Kim, Jee-Hye Lee, Se-Heon Kim, In-Kag Hwang, Yong-Hee Lee, and Sung-Bock Kim

Appl. Phys. Lett. 86, 031101 (2005); http://dx.doi.org/10.1063/1.1852716 (3 pages) | Cited 22 times

Online Publication Date: 7 January 2005

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We propose and realize the photonic quasicrystal (PQC) single-cell resonator based on a InP-InGaAsP freestanding slab. A well-defined hexapole-like localized state following a C6ν symmetry is identified from the PQC single-cell resonator. In this type of hexapole mode, the electromagnetic energy is strongly concentrated on the dielectric region, in contrast to that in a triangular lattice photonic crystal. By tailoring the structural parameters, the hexapole mode shows a maximum theoretical quality factor of ∼ 20 000. The PQC single-cell resonator lases in a single hexapole mode with a threshold of ∼ 0.6 mW at room temperature.
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42.70.Qs Photonic bandgap materials
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Emission properties of 6.7 μm continuous-wave PbSe-based vertical-emitting microcavity lasers operating up to 100 K

T. Schwarzl, G. Springholz, M. Böberl, E. Kaufmann, J. Roither, W. Heiss, J. Fürst, and H. Pascher

Appl. Phys. Lett. 86, 031102 (2005); http://dx.doi.org/10.1063/1.1853527 (3 pages) | Cited 16 times

Online Publication Date: 10 January 2005

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A detailed analysis of midinfrared cw lasing of IV–VI vertical-cavity surface-emitting devices is presented. The structures, based on high-finesse microcavities containing PbSe as active medium, show optically pumped cw laser emission up to temperatures of 100 K at a long wavelength of 6.7 μm. Stimulated emission with a very narrow beam divergence below 1° and a large temperature tuning range of 70 nm is found. The measured linewidth of the laser emission is only 0.6 nm, limited by the spectrometer resolution with a strong narrowing with respect to the linewidth of the subthreshold signal. The observed cw output power amounts up to 1.2 mW at 85 K.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Sa Microcavity and microdisk lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

Highly linear and efficient phase modulators based on GaInAsP-InP three-step quantum wells

H. Mohseni, H. An, Z. A. Shellenbarger, M. H. Kwakernaak, and J. H. Abeles

Appl. Phys. Lett. 86, 031103 (2005); http://dx.doi.org/10.1063/1.1854219 (3 pages) | Cited 6 times

Online Publication Date: 10 January 2005

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Highly linear and efficient phase modulators based on three-step quantum wells are reported. The spatial separation of electron and hole wave functions in the three-step quantum well leads to enhancement of the linear electro-optic component. In parallel, the quadratic electro-optic component is suppressed using a method based on tailored doping profile. Measured modulation efficiency is 48°∕mm V, and the ratio of linear to quadratic components of the phase modulation is 640 at λ = 1560 nm. The efficiency is similar to the best reported values for semiconductor modulators at this wavelength, while the linearity is more than one order of magnitude higher.
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42.79.Hp Optical processors, correlators, and modulators
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.20.Jq Electro-optical effects
73.21.Fg Quantum wells

Photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane

Lutz Paelke, Heinz-S. Kitzerow, and Peter Strohriegl

Appl. Phys. Lett. 86, 031104 (2005); http://dx.doi.org/10.1063/1.1852082 (3 pages) | Cited 9 times

Online Publication Date: 10 January 2005

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The photorefractive effect in a photoconducting polymer containing small liquid crystal droplets is studied. Two beam coupling experiments indicate a high optical gain at moderate field strength (>50 cm−1 at 10 V∕μm). The writing of photorefractive gratings is reversible. The dynamic behavior can be described by a two step process of the grating formation, the faster time constants being of the order of 100 ms. Modulation of the external voltage indicates that the reorientation of the director in the liquid crystals droplets is faster than the rise and decay times of the space charge field.
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61.30.Pq Microconfined liquid crystals: droplets, cylinders, randomly confined liquid crystals, polymer dispersed liquid crystals, and porous systems
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
72.40.+w Photoconduction and photovoltaic effects
77.22.Jp Dielectric breakdown and space-charge effects
42.70.Gi Light-sensitive materials
42.79.Dj Gratings
42.70.Df Liquid crystals

Characterization of femtosecond light pulses coupled to hollow-pyramid near-field probes: Localization in space and time

M. Labardi, M. Zavelani-Rossi, D. Polli, G. Cerullo, M. Allegrini, S. De Silvestri, and O Svelto

Appl. Phys. Lett. 86, 031105 (2005); http://dx.doi.org/10.1063/1.1852088 (3 pages) | Cited 18 times

Online Publication Date: 10 January 2005

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We perform the in situ characterization, by second-order optical autocorrelation, of femtosecond pulses transmitted by near-field optical probes. We demonstrate that transmission through hollow pyramid probes with diameter down to 65 nm has negligible effects on the duration of pulses as short as 30 fs. We also show that such probes allow obtaining, at their output, sufficient peak power to perform nonlinear optical experiments in the near field on such a space and time scale.
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78.47.-p Spectroscopy of solid state dynamics
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
07.79.Fc Near-field scanning optical microscopes
07.60.Rd Visible and ultraviolet spectrometers
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Extended-area optically induced organization of microparticles on a surface

V. Garcés-Chávez, K. Dholakia, and G. C. Spalding

Appl. Phys. Lett. 86, 031106 (2005); http://dx.doi.org/10.1063/1.1843283 (3 pages) | Cited 44 times

Online Publication Date: 11 January 2005

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To extend beyond the limited field of view associated with optical tweezers, we implement a new geometry for lensless optical trapping (“LOT”). A Ronchi ruling is imaged at a sample interface beyond the critical angle for total internal reflection imposing local structure upon the optical fields. Due to the resulting transverse optical gradients, more than one thousand microparticles spanning 1 mm2 were organized into microchannels that are entirely optical in origin. A generalized approach is presented, allowing for either guiding or stable trapping, as a function of the relative intensity of the counterpropagating surface waves.
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37.10.Vz Mechanical effects of light on atoms, molecules, and ions
87.80.Cc Optical trapping
82.70.Dd Colloids

Crack-free fully epitaxial nitride microcavity using highly reflective AlInN∕GaN Bragg mirrors

J.-F. Carlin, J. Dorsaz, E. Feltin, R. Butté, N. Grandjean, M. Ilegems, and M. Laügt

Appl. Phys. Lett. 86, 031107 (2005); http://dx.doi.org/10.1063/1.1849851 (3 pages) | Cited 45 times

Online Publication Date: 11 January 2005

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We report the growth over 2 in. sapphire substrates of crack-free fully epitaxial nitride-based microcavities using two highly reflective lattice-matched AlInN∕GaN distributed Bragg reflectors (DBRs). The optical cavity is formed by an empty 3λ/2 GaN cavity surrounded by AlInN∕GaN DBRs with reflectivities close to 99%. Reflectivity and transmission measurements were carried out on these structures, which exhibit a stopband of 28 nm. The cavity mode is clearly resolved with a linewidth of 2.3 nm. These results demonstrate that the AlInN∕GaN system is very promising for the achievement of strong light–matter interaction and the fabrication of nitride-based vertical cavity surface emitting lasers.
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81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.79.-e Optical elements, devices, and systems
42.79.Bh Lenses, prisms and mirrors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)

Homeotropically aligned nematic liquid crystal device locked by a polymer wall with wide viewing angle

S. H. Lee, S. H. Park, M.-H. Lee, S. T. Oh, and G.-D. Lee

Appl. Phys. Lett. 86, 031108 (2005); http://dx.doi.org/10.1063/1.1849842 (3 pages) | Cited 13 times

Online Publication Date: 13 January 2005

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We fabricated a homeotropically aligned nematic liquid crystal display (LCD), where the chiral-doped LC with negative dielectric anisotropy is locked by a polymer wall under crossed polarizers and whose on and off states are controlled by a vertical electric field. In the absence of an electric field, the rubbing-free device appears to be dark. In the presence of the field, the homeotropically aligned LCs tilt down, giving rise to brightness but four brush schlieren textures appear with point singularity S = +1. This indicates that the mid-directors have radial alignment inside the polymer wall in the voltage-on state. Consequently, the device shows excellent viewing angle characteristics. The electro-optic characteristics of one prototype with excellent viewing angles are reported herein.
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42.79.Kr Display devices, liquid-crystal devices
61.30.Eb Experimental determinations of smectic, nematic, cholesteric, and other structures
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order

Ultrafast optical response of a high-reflectivity GaAs∕AlAs Bragg mirror

Sara R. Hastings, Michiel J. A. de Dood, Hyochul Kim, William Marshall, Hagai S. Eisenberg, and Dirk Bouwmeester

Appl. Phys. Lett. 86, 031109 (2005); http://dx.doi.org/10.1063/1.1854200 (3 pages) | Cited 5 times

Online Publication Date: 13 January 2005

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The ultrafast response of a high-reflectivity GaAs∕AlAs Bragg mirror to optical pumping is investigated for all-optical switching applications. Both Kerr and free carrier nonlinearities are induced with 100 fs, 780 nm pulses with a fluence of 0.64 and 0.8 kJ/m2. The absolute transmission of the mirror at 931 nm increases by a factor of 27 from 0.0024% to 0.065% on a picosecond time scale. These results demonstrate the potential for a high-reflectivity ultrafast switchable mirror for quantum optics and optical communication applications. A design is proposed for a structure to be pumped below the band gaps of the semiconductor mirror materials. Theoretical calculations on this structure show switching ratios up to 2200 corresponding to switching from 0.017% to 37.4% transmission.
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42.79.Bh Lenses, prisms and mirrors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Vacuum laser-driven acceleration by a slits-truncated Bessel beam

D. Li and K. Imasaki

Appl. Phys. Lett. 86, 031110 (2005); http://dx.doi.org/10.1063/1.1852726 (3 pages) | Cited 10 times

Online Publication Date: 13 January 2005

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An approach of vacuum acceleration by the longitudinal electric field of laser Bessel beam is proposed in this letter. Laser Bessel beam, truncated by a set of annular slits, exhibits several special zones over its propagation path, where an electron could avoid deceleration as it slides into the decelerating phase. Because of the “diffraction-free” properties of Bessel beam, a long interaction distance could be sustained and multistage configuration becomes possible. With the help of single particle model, the potential of a multistage acceleration scheme driven by a Laser Bessel beam is shown.
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81.16.Mk Laser-assisted deposition
41.75.Jv Laser-driven acceleration

Fast birefringent mode stressed liquid crystal

John L. West, Guoqiang Zhang, Anatoliy Glushchenko, and Yurii Reznikov

Appl. Phys. Lett. 86, 031111 (2005); http://dx.doi.org/10.1063/1.1852720 (3 pages) | Cited 36 times

Online Publication Date: 13 January 2005

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We report a stressed liquid crystal (SLC) that produce a large shift in phase retardation at submillisecond speeds. The SLC consists of uniformly aligned micro-domains of a liquid crystal dispersed in a polymer structure. Mechanical stress produces uniform alignment, essentially eliminates light scattering, and substantially improves the electro-optic performance. A 22-μm-thick SLC film switches more than 2 μm of phase retardation in less than 1 ms. The system has a linear voltage response with essentially no hysteresis.
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42.70.Df Liquid crystals
78.66.Sq Composite materials
78.20.Fm Birefringence
78.20.Jq Electro-optical effects

Low-loss and directional output ZnO thin-film ridge waveguide random lasers with MgO capped layer

Clement Yuen, S. F. Yu, Eunice S. P. Leong, H. Y. Yang, S. P. Lau, N. S. Chen, and H. H. Hng

Appl. Phys. Lett. 86, 031112 (2005); http://dx.doi.org/10.1063/1.1850595 (3 pages) | Cited 29 times

Online Publication Date: 13 January 2005

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Room-temperature ultraviolet lasing characteristics of ZnO thin-film ridge-waveguide random lasers with MgO capped layer fabricated on n-type (100) Si substrate are reported. It is demonstrated that highly directional emission from the facets of the random lasers can be achieved. Reduction of scattering loss inside the random cavities can also be obtained. In addition, the improvement in the efficiency of the lasing characteristics of the random lasers by optical feedback is studied.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Zz Random lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
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