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17 Jan 2005

Volume 86, Issue 3, Articles (03xxxx)

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Appl. Phys. Lett. 86, 033101 (2005); http://dx.doi.org/10.1063/1.1851002 (3 pages)

Kun Chen, Allen Taflove, Young L. Kim, and Vadim Backman
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Self-assembled patterns of nanospheres with symmetries from submicrons to centimeters

Kun Chen, Allen Taflove, Young L. Kim, and Vadim Backman

Appl. Phys. Lett. 86, 033101 (2005); http://dx.doi.org/10.1063/1.1851002 (3 pages) | Cited 9 times

Online Publication Date: 7 January 2005

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We report pattern formations during the drying of a sheet of an aqueous suspension of nanospheres. The structures self-assembled by nanospheres span several centimeters and exhibit order at scales ranging from nanometers to centimeters, although the substrate has no predefined pattern. Within these structures, several regular patterns can be identified, including two-dimensional periodic gratings generated by crack networks with a characteristic spatial frequency linearly depending on the evaporation speed, and three-dimensional flower-like structures. This phenomenon potentially provides a simple and inexpensive method to grow structures having unique electromagnetic and/or biological properties.
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81.07.Bc Nanocrystalline materials
61.46.-w Structure of nanoscale materials
81.16.Rf Micro- and nanoscale pattern formation
68.55.-a Thin film structure and morphology
68.60.Bs Mechanical and acoustical properties
62.20.M- Structural failure of materials
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure

Influence of In incorporation on the electronic structure of ZnO nanowires

Seung Yong Bae, Hyun Chul Choi, Chan Woong Na, and Jeunghee Park

Appl. Phys. Lett. 86, 033102 (2005); http://dx.doi.org/10.1063/1.1851591 (3 pages) | Cited 17 times

Online Publication Date: 7 January 2005

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High-density Zn0.85In0.15O and Zn0.75In0.25O nanowires were synthesized by thermal evaporation method. They consist of single-crystalline wurtzite ZnO structure with uniform [010] growth direction. X-ray diffraction (XRD) reveals the structural defects caused by the In incorporation. X-ray photoelectron spectrum (XPS) analysis suggests that In withdraw the electrons from Zn and increase the dangling-bond O 2p states. The lower energy shift and green-band enhancement of photoluminescence are well correlated with the results of XRD and XPS.
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81.05.Dz II-VI semiconductors
81.07.Bc Nanocrystalline materials
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
61.72.uj III-V and II-VI semiconductors
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
61.72.S- Impurities in crystals
71.55.Gs II-VI semiconductors
78.55.Et II-VI semiconductors
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
79.60.Bm Clean metal, semiconductor, and insulator surfaces
79.60.Jv Interfaces; heterostructures; nanostructures
61.46.-w Structure of nanoscale materials
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Probing the size and density of silicon nanocrystals in nanocrystal memory device applications

Tao Feng, Hongbin Yu, Matthew Dicken, James R. Heath, and Harry A. Atwater

Appl. Phys. Lett. 86, 033103 (2005); http://dx.doi.org/10.1063/1.1852078 (3 pages) | Cited 35 times

Online Publication Date: 10 January 2005

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Structural characterization via transmission electron microscopy and atomic force microscopy of arrays of small Si nanocrystals embedded in SiO2, important to many device applications, is usually difficult and fails to correctly resolve nanocrystal size and density. We demonstrate that scanning tunneling microscopy (STM) imaging enables a much more accurate measurement of the ensemble size distribution and array density for small Si nanocrystals in SiO2, estimated to be 2–3 nm and 4×1012–3×1013 cm−2, respectively, in this study. The reflection high energy electron diffraction pattern further verifies the existence of nanocrystallites in SiO2. The present STM results enable nanocrystal charging characteristics to be more clearly understood: we find the nanocrystal charging measurements to be consistent with single charge storage on individual Si nanocrystals. Both electron tunneling and hole tunneling processes are suggested to explain the asymmetric charging∕discharging processes as a function of bias.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.46.-w Structure of nanoscale materials
61.72.uf Ge and Si
61.72.Cc Kinetics of defect formation and annealing
73.40.Gk Tunneling
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.37.Lp Transmission electron microscopy (TEM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)

Controlled growth of GaN nanowires by pulsed metalorganic chemical vapor deposition

G. Kipshidze, B. Yavich, A. Chandolu, J. Yun, V. Kuryatkov, I. Ahmad, D. Aurongzeb, M. Holtz, and H. Temkin

Appl. Phys. Lett. 86, 033104 (2005); http://dx.doi.org/10.1063/1.1850188 (3 pages) | Cited 26 times

Online Publication Date: 11 January 2005

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Controlled and reproducible growth of GaN nanowires is demonstrated by pulsed low-pressure metalorganic chemical vapor deposition. Using self-assembled Ni nanodots as nucleation sites on (0001) sapphire substrates we obtain nanowires of wurtzite-phase GaN with hexagonal cross sections, diameters of about 100 nm, and well-controlled length. The nanowires are highly oriented and perpendicular to the growth surface. The wires have excellent structural and optical properties, as determined by x-ray diffraction, cathodoluminescence, and Raman scattering. The x-ray measurements show that the nanowires are under a complex strain state consistent with a superposition of hydrostatic and biaxial components.
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81.05.Ea III-V semiconductors
81.07.Bc Nanocrystalline materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
61.46.-w Structure of nanoscale materials
78.60.Hk Cathodoluminescence, ionoluminescence
78.30.Fs III-V and II-VI semiconductors

High-mobility carbon-nanotube thin-film transistors on a polymeric substrate

E. S. Snow, P. M. Campbell, M. G. Ancona, and J. P. Novak

Appl. Phys. Lett. 86, 033105 (2005); http://dx.doi.org/10.1063/1.1854721 (3 pages) | Cited 86 times

Online Publication Date: 11 January 2005

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We report the development of high-mobility carbon-nanotube thin-film transistors fabricated on a polymeric substrate. The active semiconducting channel in the devices is composed of a random two-dimensional network of single-walled carbon nanotubes (SWNTs). The devices exhibit a field-effect mobility of 150 cm2/Vs and a normalized transconductance of 0.5 mS/mm. The ratio of on-current (Ion) to off-current (Ioff) is ∼ 100 and is limited by metallic SWNTs in the network. With electronic purification of the SWNTs and improved gate capacitance we project that the transconductance can be increased to ∼ 10–100 mS/mm with a significantly higher value of Ion/Ioff, thus approaching crystalline semiconductor-like performance on polymeric substrates.
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85.30.Tv Field effect devices
85.35.Kt Nanotube devices
73.63.Fg Nanotubes
73.61.Wp Fullerenes and related materials
73.50.Dn Low-field transport and mobility; piezoresistance

Lateral electron transport through single self-assembled InAs quantum dots

M. Jung, K. Hirakawa, Y. Kawaguchi, S. Komiyama, S. Ishida, and Y. Arakawa

Appl. Phys. Lett. 86, 033106 (2005); http://dx.doi.org/10.1063/1.1853516 (3 pages) | Cited 27 times

Online Publication Date: 12 January 2005

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The electron transport through single self-assembled InAs quantum dots (QDs) grown on GaAs surfaces has been investigated by using metallic leads with narrow gaps. Clear Coulomb staircases and Coulomb gaps have been observed at 4.2 K. Coulomb blockade oscillation which reflects single electron charging in the QDs was also observed when a backgate voltage was swept. It is found that uncapped as-grown InAs QDs with diameter ≥ 50 nm contain electrons without applying a gate bias.
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73.63.Kv Quantum dots
73.23.Hk Coulomb blockade; single-electron tunneling

Passivation effect of Al/LiF electrode on C60 diodes

C. J. Huang, D. Grozea, A. Turak, and Z. H. Lu

Appl. Phys. Lett. 86, 033107 (2005); http://dx.doi.org/10.1063/1.1854193 (3 pages) | Cited 6 times

Online Publication Date: 13 January 2005

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The current–voltage characteristics, the temperature dependence of the dark conductivity, and the effect of oxygen exposure of C60 sandwich diodes are compared with Al and Al/LiF as electrodes. It appears that a thin LiF interlayer can help to preserve the space-charge limited conduction in C60 diodes under exposure to air, by considerably suppressing the oxygen diffusion into the C60 film and reaction at the Al/C60 interface.
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85.30.Kk Junction diodes
73.50.Pz Photoconduction and photovoltaic effects
81.65.Rv Passivation
73.50.Fq High-field and nonlinear effects
66.30.Ny Chemical interdiffusion; diffusion barriers

Cyclodextrin driven hydrophobic∕hydrophilic transformation of semiconductor nanoparticles

Jun Feng, Shi-You Ding, Melvin P. Tucker, Michael E. Himmel, Yong-Hyun Kim, S. B. Zhang, Brian M. Keyes, and Garry Rumbles

Appl. Phys. Lett. 86, 033108 (2005); http://dx.doi.org/10.1063/1.1854739 (3 pages) | Cited 10 times

Online Publication Date: 13 January 2005

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Quantum dots (QDs) have been the subject of considerable study in theoretical physics, and water soluble QDs now appear to have numerous applications in biological tagging, molecular electronic devices, and nanoscale engineering. The work reported here supports the notion that the aliphatic chains of the trioctylphosphine oxide molecules decorating these (CdSe)ZnS core-shell QDs are stabilized by the hydrophobic cyclodextrin (CD) lumen. Photoluminescence studies show a redshift of over 15 nm in the emission wavelength of the QDs upon complexation with the CD, and first-principles calculations reveal an exothermic exchange of the S in the ZnS shell with the CD hydroxyl oxygen. Unlike simple water-driven surface transformations, the directed bonding of hydroxyl groups to the ZnS shell results in stable structures, verified by photoluminescence and Fourier transform infrared spectroscopy.
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68.65.Hb Quantum dots (patterned in quantum wells)
68.35.Rh Phase transitions and critical phenomena
78.67.Hc Quantum dots
78.55.Et II-VI semiconductors
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
61.46.-w Structure of nanoscale materials

Few electrons injection in silicon nanocrystals probed by ultrahigh vacuum atomic force microscopy

S. Decossas, J. Vitiello, T. Baron, F. Mazen, and S. Gidon

Appl. Phys. Lett. 86, 033109 (2005); http://dx.doi.org/10.1063/1.1829779 (3 pages) | Cited 4 times

Online Publication Date: 13 January 2005

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Ultrahigh vacuum atomic force microscopy has been used to inject and detect charges in individual silicon nanocrystals. The sensitivity of our measurements is shown to be better than 2 e. Injected charge saturates as a function of injection time for a given electric field. The potential of the charged nanocrystal as a function of the number of charges in the dot is in good agreement with a simple electrostatic model.
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73.63.Bd Nanocrystalline materials
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.46.-w Structure of nanoscale materials
68.37.Ps Atomic force microscopy (AFM)

Co-doped TiO2 nanowire electric field-effect transistors fabricated by suspended molecular template method

Yun-Hi Lee, Je-Min Yoo, Dong-hyuk Park, D. H. Kim, and B. K. Ju

Appl. Phys. Lett. 86, 033110 (2005); http://dx.doi.org/10.1063/1.1851614 (3 pages) | Cited 23 times

Online Publication Date: 14 January 2005

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We report on the fabrication of Co 3.4 at. % doped TiO2 nanowire-based field-effect transistors with a back gate of heavily doped Si substrate and their electric field-effect functions. The TiO2:Co nanowire, which was fabricated utilizing a conventional magnetron sputtering technique on a suspended molecular template between electrodes, is a polycrystalline and consists of a chain of nanoparticles on a molecular template. The N-type field-effect transistors prepared from the suspended Co–TiO2 nanowire junction were exhibited on currents, transconductances, and a mobility of up to 0.1 mA/μm, 0.2 μA/V, and μe ≈ 66 cm2/V s, respectively, at room temperature. The unique structure of these inorganic-organic functional devices may enable the fabrication of flexible nanoelectrospin devices.
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85.30.Tv Field effect devices
73.63.Bd Nanocrystalline materials
72.20.Fr Low-field transport and mobility; piezoresistance
85.35.-p Nanoelectronic devices

CaF2/Si/CaF2 resonant tunneling diodes grown by B surfactant-mediated epitaxy

C. R. Wang, M. Bierkandt, S. Paprotta, T. Wietler, and K. R. Hofmann

Appl. Phys. Lett. 86, 033111 (2005); http://dx.doi.org/10.1063/1.1853522 (3 pages) | Cited 8 times

Online Publication Date: 14 January 2005

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A special solid-phase epitaxy technique utilizing the surfactant B for the growth of crystalline Si-QWs on CaF2/Si(111) enabled us to grow CaF2/Si/CaF2 double-barrier diodes exhibiting resonant tunneling effects from 77 K up to room temperature with peak voltages at 0.2 eV, which is very close to simple resonant tunneling model predictions. The peak voltages and currents were virtually independent of temperature. No trapping or hysteresis effects were found in the I–V characteristics which exhibited 2–7 orders of magnitude larger peak current densities than previously reported CaF2/Si/CaF2 RTDs.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.15.Np Solid phase epitaxy; growth from solid phases
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.43.Jn Tunneling

Laser-induced nanowelding of gold nanoparticles

Seol Ji Kim and Du-Jeon Jang

Appl. Phys. Lett. 86, 033112 (2005); http://dx.doi.org/10.1063/1.1856139 (3 pages) | Cited 24 times

Online Publication Date: 14 January 2005

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Picosecond laser pulses are employed to adjoin, to hold closely, and to weld gold nanoparticles on carbon-coated copper grids. Microscopic images and profiles indicate that gold particles are well connected showing single-phased nanocontact. Our results suggest that laser-induced nanowelding can be achieved in a programmed manner to produce ohmic contact by considering the size-dependent thermodynamic, dynamic, and kinetic properties of metallic nanometerials.
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81.20.Vj Joining; welding
61.46.-w Structure of nanoscale materials
68.37.Lp Transmission electron microscopy (TEM)

Nanoscale device isolation of organic transistors via electron-beam lithography

Brian A. Mattis, Yunan Pei, and Vivek Subramanian

Appl. Phys. Lett. 86, 033113 (2005); http://dx.doi.org/10.1063/1.1854217 (3 pages) | Cited 3 times

Online Publication Date: 14 January 2005

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We investigated the use of electron-beam lithography on pentacene and poly(3-hexylthiophene) field-effect transistors to achieve device isolation and enable the realization of nanoscale organic circuits. We determined the doses and exposure linewidths needed to suppress carrier transport, enabling direct patterning at the nanoscale. The precision limits were also studied through an analysis of proximity scattering effects. With an optimized pattern and exposure, we reduced off-currents by almost four orders of magnitude and gate leakage by three orders of magnitude on backgated devices. Our electron-beam isolation methods also increased the on/off ratio and drastically improved the subthreshold swing, thus attesting to the viability of this technique for patterning of organic circuits at the nanoscale.
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85.30.Tv Field effect devices
85.40.Hp Lithography, masks and pattern transfer
73.50.Dn Low-field transport and mobility; piezoresistance
73.61.Ph Polymers; organic compounds

Experimental evidence for antiferromagnetic spin–spin interaction between carriers localized in coupled quantum dots

S. Lee, H. S. Lee, J. Y. Lee, M. Dobrowolska, and J. K. Furdyna

Appl. Phys. Lett. 86, 033114 (2005); http://dx.doi.org/10.1063/1.1855422 (3 pages) | Cited 9 times

Online Publication Date: 14 January 2005

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A self-assembled quantum dot (QD) system consisting of adjacent CdSe and CdZnMnSe QD layers in a ZnSe matrix was investigated using polarization-selective magnetophotoluminescence (PL). We can unambiguously identify which QD peak originates from which material, because PL from CdZnMnSe (a diluted magnetic semiconductor) exhibits a large Zeeman shift in the presence of a magnetic field. Significant enhancement of the degree of σ− circular polarization emitted by the nonmagnetic CdSe QDs is observed in the double layer system, as compared to that observed in similar CdSe QDs without the influence of neighboring CdZnMnSe QDs. This behavior can be understood in terms of antiferromagnetic interaction between carrier spins localized in pairs of CdSe and CdZnMnSe QDs that are electronically coupled.
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75.50.Pp Magnetic semiconductors
75.50.Ee Antiferromagnetics
75.25.-j Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source x-ray scattering, etc.)
73.21.La Quantum dots
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
78.20.Ls Magneto-optical effects
78.67.Hc Quantum dots
78.55.Et II-VI semiconductors
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