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24 Jan 2005

Volume 86, Issue 4, Articles (04xxxx)

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Appl. Phys. Lett. 86, 043106 (2005); http://dx.doi.org/10.1063/1.1853514 (3 pages)

William L. Hughes and Zhong L. Wang
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High-photosensitivity p-channel organic phototransistors based on a biphenyl end-capped fused bithiophene oligomer

Yong-Young Noh, Dong-Yu Kim, Yuji Yoshida, Kiyoshi Yase, Byung-Jun Jung, Eunhee Lim, and Hong-Ku Shim

Appl. Phys. Lett. 86, 043501 (2005); http://dx.doi.org/10.1063/1.1856144 (3 pages) | Cited 62 times

Online Publication Date: 18 January 2005

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We report highly photosensitive organic phototransistors (OPTs) based on a 2,5-bis-biphenyl-4-yl-thieno[3,2-b]thiophene (BPTT). The measured maximum sensitivity and the ratio of photocurrent to dark current (Iph/Idark) in BPTT OPTs were 82 A/W and 2.0×105 under 380 nm UV light with 1.55 mW/cm2, respectively. The prepared OPTs show a photocurrent response similar to the absorption spectrum of BPTT. The major mechanisms for photocurrent amplification in this device were verified from experimental results as photovoltaic (turn-on) and photocurrent effect (turn-off) by a fitting to theoretic equations.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.Tv Field effect devices
73.50.Pz Photoconduction and photovoltaic effects
61.82.Fk Semiconductors
73.50.Dn Low-field transport and mobility; piezoresistance
73.61.Ph Polymers; organic compounds
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
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