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24 Jan 2005

Volume 86, Issue 4, Articles (04xxxx)

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Appl. Phys. Lett. 86, 043106 (2005); http://dx.doi.org/10.1063/1.1853514 (3 pages)

William L. Hughes and Zhong L. Wang
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A possible mechanism of anomalous shift and asymmetric hysteresis behavior of ferroelectric thin films

C. K. Wong and F. G. Shin

Appl. Phys. Lett. 86, 042901 (2005); http://dx.doi.org/10.1063/1.1853520 (3 pages) | Cited 15 times

Online Publication Date: 18 January 2005

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We studied theoretically the hysteresis behavior of ferroelectric thin films. The anomalous ferroelectric response is discussed by use of a bilayer model. Electrical conductivities of the films have been taken into account. To model the effects of the inhomogeneity of polarization and permittivity across the interface, the film is assumed to possess a secondary dielectric∕ferroelectric phase (a dead or passive layer) with asymmetric conductivity. This configuration is found to produce large shifting (along the field axis) and deformation of the measured hysteresis loop. This is a manifestation of the asymmetric conductivity of the material. Theoretical calculation based on this model shows that the observed phenomena of shifted and skewed hysteresis loop in ferroelectric thin films can be explained in this way.
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77.55.-g Dielectric thin films
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
77.80.Dj Domain structure; hysteresis
68.60.Bs Mechanical and acoustical properties
77.22.Ch Permittivity (dielectric function)
77.22.Ej Polarization and depolarization
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity

Si Segregation into Pr2O3 and La2O3 high-k gate oxides

G. Lippert, J. Dąbrowski, V. Melnik, R. Sorge, Ch. Wenger, P. Zaumseil, and H.-J. Müssig

Appl. Phys. Lett. 86, 042902 (2005); http://dx.doi.org/10.1063/1.1853521 (3 pages) | Cited 17 times

Online Publication Date: 18 January 2005

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Pr and La oxide thin films were investigated in the context of their application as high-k dielectrics in complementary metal oxide technology. The films were deposited by molecular beam epitaxy on bare and TiN-covered Si(001). The influence of growth and post-deposition annealing on the composition and electrical parameters was studied. We observed Si penetration from bare Si(001) into the growing film. Based on the results of capacitance–voltage measurements and ab initio calculations, we conclude that Si is a source of defects responsible for leakage currents.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
68.35.Dv Composition, segregation; defects and impurities
66.30.J- Diffusion of impurities
77.22.Ch Permittivity (dielectric function)
68.35.Fx Diffusion; interface formation
61.72.Cc Kinetics of defect formation and annealing

Three-dimensional polarization imaging of (Ba,Sr)TiO3:MgO composites

Patrick Irvin, Jeremy Levy, Ruyan Guo, and Amar Bhalla

Appl. Phys. Lett. 86, 042903 (2005); http://dx.doi.org/10.1063/1.1854722 (3 pages) | Cited 15 times

Online Publication Date: 18 January 2005

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The dielectric tuning and loss of (Ba,Sr)TiO3:MgO bulk composites depend strongly on the connectivity and interaction among the two phases. To investigate this relationship, the polar structure and dynamics of these composites are mapped as a function of space and time using a pair of three-dimensional probes: second-harmonic confocal scanning optical microscopy (SH-CSOM), which maps ferroelectric polarization in three dimensions, and time-resolved scanning optical microscopy (TR-CSOM), which maps polarization dynamics along two spatial dimensions and one time dimension. SH-CSOM measurements reveal a high degree of homogeneity within the (Ba,Sr)TiO3 regions, while TR-CSOM measurements indicate that topologically connected regions respond with a spatially uniform phase.
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77.84.Lf Composite materials
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis
77.22.Gm Dielectric loss and relaxation
77.22.Ch Permittivity (dielectric function)

Hybrid titanium–aluminum oxide layer as alternative high-k gate dielectric for the next generation of complementary metal–oxide–semiconductor devices

O. Auciello, W. Fan, B. Kabius, S. Saha, J. A. Carlisle, R. P. H. Chang, C. Lopez, E. A. Irene, and R. A. Baragiola

Appl. Phys. Lett. 86, 042904 (2005); http://dx.doi.org/10.1063/1.1856137 (3 pages) | Cited 39 times

Online Publication Date: 20 January 2005

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Research is focused on finding reliable high-dielectric constant (k) oxides with high capacitance and all critical properties required for the next generation of complementary metal–oxide–semiconductor (CMOS) gates. A trade-off between dielectric constant and band-offset height is generally observed on gate oxides. Combining TiO2 and Al2O3, with the two extremes of high permittivity (k) and high band offset, we produced a TixAl1−xOy (TAO) oxide layer with k = ∼ 30 and low dielectric leakage for a next generation of high-k dielectric gates. We developed a low temperature oxidation process, following room temperature sputter-deposition of TiAl layers, to produce ultrathin TAO layers on Si with subatomic or no SiO2 or silicide interface formation. We demonstrated TAO layers with <0.5 nm equivalent oxide thickness on Si and thermal stability under rapid thermal annealing up to about 950 °C. The data presented here provide insights into fundamental physics and materials science of the TAO layer and its potential application as gate dielectric for the next generation of CMOS devices.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
81.65.Mq Oxidation
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
77.22.Ch Permittivity (dielectric function)
68.60.Dv Thermal stability; thermal effects
65.60.+a Thermal properties of amorphous solids and glasses: heat capacity, thermal expansion, etc.

(Pb,La)TiO3/(Pb,Ca)TiO3 ferroelectric heterostructures for nonvolatile memories

Rosalía Poyato, M. Lourdes Calzada, and Lorena Pardo

Appl. Phys. Lett. 86, 042905 (2005); http://dx.doi.org/10.1063/1.1853506 (3 pages) | Cited 4 times

Online Publication Date: 21 January 2005

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The existence of voltage shifts in the ferroelectric loops measured in (Pb,La)TiO3/(Pb,Ca)TiO3 heterostructures onto Si-based substrates after poling at 150 °C has been studied. Results have been compared with the measured ones in (Pb,La)TiO3 and (Pb,Ca)TiO3 single-component films, which have been prepared in identical conditions. Lower voltage shifts have been obtained in the heterostructures. The reduced number of VO–VPb defect-dipoles present in the heterostructures as a consequence of the mechanism of stress relaxation via plastic deformation through vacancies diffusion that takes place in these films results in a reduced electron trapping, and thus, in a lower voltage shift of the loop.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
66.30.Lw Diffusion of other defects
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.F- Deformation and plasticity
77.55.-g Dielectric thin films
81.40.Lm Deformation, plasticity, and creep
61.72.J- Point defects and defect clusters
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
68.60.Bs Mechanical and acoustical properties

Piezoelectric ultrathin BaTiO3 films

Y. Drezner, M. Nitzani, and S. Berger

Appl. Phys. Lett. 86, 042906 (2005); http://dx.doi.org/10.1063/1.1857084 (3 pages) | Cited 4 times

Online Publication Date: 21 January 2005

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Ultrathin (about 3 nm thick) BaTiO3 films were deposited by rf sputtering on a Si(100) substrate. LaNiO3 thin films were used as bottom and top conductive electrodes. The BaTiO3 films show piezoelectric behavior characterized by a coefficient d31 = −1.8 pC/N. The BaTiO3 films have an extremely high resistance to electrical breakdown up to a field of about 200 MV/cm.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.65.Bn Piezoelectric and electrostrictive constants
77.22.Jp Dielectric breakdown and space-charge effects
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