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24 Jan 2005

Volume 86, Issue 4, Articles (04xxxx)

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Appl. Phys. Lett. 86, 043106 (2005); http://dx.doi.org/10.1063/1.1853514 (3 pages)

William L. Hughes and Zhong L. Wang
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Miniature quantum-well microwave spectrometer operating at liquid-nitrogen temperatures

I. V. Kukushkin, S. A. Mikhailov, J. H. Smet, and K. von Klitzing

Appl. Phys. Lett. 86, 044101 (2005); http://dx.doi.org/10.1063/1.1856143 (3 pages) | Cited 15 times

Online Publication Date: 18 January 2005

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We demonstrate that a two-dimensional electron system fabricated from a GaAs/AlGaAs quantum well in the presence of a magnetic field B possesses the ability to detect electromagnetic radiation in a broad frequency range. Irradiation of the sample with microwaves produces a dc-photovoltage which oscillates as a function of B. The amplitude and the period of the oscillations are proportional to the radiation power and the wavelength, respectively. Successful operation of such a detector∕spectrometer is reported for microwave frequencies up to ∼ 150 GHz and temperatures up to ∼ 80 K. We do not anticipate any principal difficulties in extending the operation frequency further into the terahertz region.
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07.57.Pt Submillimeter wave, microwave and radiowave spectrometers; magnetic resonance spectrometers, auxiliary equipment, and techniques
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
72.40.+w Photoconduction and photovoltaic effects
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
73.21.Fg Quantum wells

Multiple-spot parallel processing for laser micronanofabrication

Jun-ichi Kato, Nobuyuki Takeyasu, Yoshihiro Adachi, Hong-Bo Sun, and Satoshi Kawata

Appl. Phys. Lett. 86, 044102 (2005); http://dx.doi.org/10.1063/1.1855404 (3 pages) | Cited 64 times

Online Publication Date: 18 January 2005

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A tightly focused femtosecond laser has been established as a unique tool for micronanostructure fabrication due to its intrinsic three-dimensional processing. In this letter, we utilize a microlens array to produce multiple spots for parallel fabrication, giving rise to a revolutionary augmentation for our previously developed single-beam two-photon photopolymerization technology [ S. Kawata, H.-B. Sun, T. Tanaka, and K. Takada, Nature (London) 412, 697 (2001) ]. Two- and three-dimensional multiple structures, such as microletter set and self-standing microspring array, are demonstrated as examples of mass production. More than 200 spot simultaneous fabrication has been realized by optimizing the exposure condition for the photopolymerizable resin, i.e., a two-order increase of yield efficiency. Potential applications of this technique are discussed.
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42.82.Cr Fabrication techniques; lithography, pattern transfer
42.62.-b Laser applications
42.79.Bh Lenses, prisms and mirrors
81.16.-c Methods of micro- and nanofabrication and processing
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.70.Jk Polymers and organics

Electron trapping and detrapping in ion-beam-damaged diamond surfaces

A. Hoffman, I. Andrienko, D. N. Jamieson, and S. Prawer

Appl. Phys. Lett. 86, 044103 (2005); http://dx.doi.org/10.1063/1.1852083 (3 pages) | Cited 10 times

Online Publication Date: 19 January 2005

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Ion-beam-damaged diamond surfaces subjected to electron irradiation are observed to develop a pronounced negative surface charge. In this study, this effect is shown to be associated with the capture of electrons into traps created by the ion irradiation process. The trapped charge increases with ion dose and incident electron current, and decreases with increasing sample temperature and laser illumination as the traps are depleted of charge. An activation energy for detrapping of about 1.5 eV is deduced from the temperature dependence of the charging.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
71.55.Ht Other nonmetals
61.82.Ms Insulators
61.80.Jh Ion radiation effects
61.80.Fe Electron and positron radiation effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Application of inverse problems to current density reconstruction inside components

T. Talbert, L. Nativel, T. Martiré, S. Faucher, Ch. Joubert, and N. Daudé

Appl. Phys. Lett. 86, 044104 (2005); http://dx.doi.org/10.1063/1.1849411 (3 pages)

Online Publication Date: 20 January 2005

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In this letter, a nonintrusive method to retrieve current density inside a component is presented. Numerous applications including passive component reliability tests are concerned. The method based upon the measurement of the electromagnetic field radiated by the component is used to reconstruct the current distribution by means of inverse problem methodology. It is applied to the simple case of a small wire loop in order to validate the measurement system (magnetic near-field) and the reconstruction method.
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07.55.Db Generation of magnetic fields; magnets
84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)

Highly sensitive time-of-flight secondary-ion mass spectroscopy for contaminant analysis of semiconductor surface using cluster impact ionization

K. Hirata, Y. Saitoh, A. Chiba, K. Narumi, Y. Kobayashi, and Y. Ohara

Appl. Phys. Lett. 86, 044105 (2005); http://dx.doi.org/10.1063/1.1852715 (3 pages) | Cited 4 times

Online Publication Date: 21 January 2005

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To compare emission yields of secondary ions from contaminated silicon wafers between cluster and monoatomic ion impacts, pulsed C1+ and C8+ beams are applied to time-of-flight secondary-ion mass spectrometry. C8+ impact of 0.5 MeV/atom provides higher secondary-ion emission yields per incident atom than C1+ impact of 0.5 MeV/atom for organic and metallic contaminants. Higher peak intensities are also observed for a C8+ ion beam with a reduced energy. The enhanced emission yields of secondary ions originating from the contaminants show that mass spectrometry with cluster impact ionization is a powerful analytical tool for highly sensitive detection of the surface contaminants on the silicon wafers.
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82.80.Rt Time of flight mass spectrometry
68.47.Fg Semiconductor surfaces
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
81.65.-b Surface treatments
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