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24 Jan 2005

Volume 86, Issue 4, Articles (04xxxx)

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Appl. Phys. Lett. 86, 043106 (2005); http://dx.doi.org/10.1063/1.1853514 (3 pages)

William L. Hughes and Zhong L. Wang
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Evidence of double layer quantum dot formation in a silicon-on-insulator nanowire transistor

K. H. Cho, B. H. Choi, S. H. Son, S. W. Hwang, D. Ahn, B.-G. Park, B. Naser, J.-F. Lin, and J. P. Bird

Appl. Phys. Lett. 86, 043101 (2005); http://dx.doi.org/10.1063/1.1854738 (3 pages) | Cited 3 times

Online Publication Date: 18 January 2005

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We report the observation of a unique example of double-dot transport in a silicon-on-insulator nanowire transistor. The transport at low temperature showed typical characteristics of two parallel quantum dots, and anomalous secondary minima were also observed in the dID/dVDS spectrum. Our transport data, including these secondary minima, were consistent with two parallel quantum dots, each formed at the front and at the back interface.
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85.35.Gv Single electron devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.63.Kv Quantum dots
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.23.Hk Coulomb blockade; single-electron tunneling

Direct visualization of nanopatterns by single-molecule imaging

Erwen Mei, Alexey Sharonov, James H. Ferris, and Robin M. Hochstrasser

Appl. Phys. Lett. 86, 043102 (2005); http://dx.doi.org/10.1063/1.1850608 (3 pages)

Online Publication Date: 18 January 2005

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The structures of patterned surface regions were clearly visualized by superimposing a series of single-molecule images from a total internal reflection fluorescence microscope, clearly demonstrating that a single-molecule imaging method can be used to directly visualize nanostructures. The pattern was fabricated on a microscope cover glass that formed a sandwich with a regular cover glass. The incorporated solution of fluorescent probe dyes was examined by single-molecule techniques. The effect of the surface pattern on the diffusion of the probe has also been examined.
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87.15.M- Spectra of biomolecules
87.15.B- Structure of biomolecules
87.15.Vv Diffusion

Near-field optical spectroscopy and microscopy of self-assembled GaN/AlN nanostructures

A. Neogi, B. P. Gorman, H. Morkoç, T. Kawazoe, and M. Ohtsu

Appl. Phys. Lett. 86, 043103 (2005); http://dx.doi.org/10.1063/1.1851005 (3 pages) | Cited 5 times

Online Publication Date: 19 January 2005

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The spatial distribution and emission properties of small clusters of GaN quantum dots in an AlN matrix are studied using high-resolution electron and optical microscopy. High-resolution transmission electron microscopy reveals near vertical correlation among the GaN dots due to a sufficiently thin AlN spacer layer thickness, which allows strain induced stacking. Scanning electron and atomic force microscopy show lateral coupling due to a surface roughness of ∼ 50–60 nm. Near-field photoluminescence in the illumination mode (both spatially and spectrally resolved) at 10 K revealed emission from individual dots, which exhibits size distribution of GaN dots from localized sites in the stacked nanostructure. Strong spatial localization of the excitons is observed in GaN quantum dots formed at the tip of self-assembled hexagonal pyramid shapes with six [10mathmath] facets.
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68.65.Hb Quantum dots (patterned in quantum wells)
78.67.Hc Quantum dots
68.37.Lp Transmission electron microscopy (TEM)
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Ps Atomic force microscopy (AFM)
78.55.Cr III-V semiconductors

Revised plane wave method for dispersive material and its application to band structure calculations of photonic crystal slabs

Shouyuan Shi, Caihua Chen, and Dennis W. Prather

Appl. Phys. Lett. 86, 043104 (2005); http://dx.doi.org/10.1063/1.1855425 (3 pages) | Cited 25 times

Online Publication Date: 19 January 2005

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In this letter we present a revised formulation of the plane wave method (PWM) for the band structure calculation of photonic crystals. In comparison to the conventional PWM, the formulation in this letter allows for modeling of dispersive material. One application of the presented method is for band structure calculations of photonic crystal slabs. While a thin photonic crystal slab is considered, a full three-dimensional (3D) problem can be reduced to a two-dimensional one by using the effective index method. However, the obtained effective index of such a slab is frequency dependent. The revised PWM is then applied to solve this problem. The results obtained using this algorithm have been compared with those using a full 3D finite-difference time-domain method and found to agree very well.
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42.70.Qs Photonic bandgap materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Self-aligned Co nanoparticle chains supported by single-crystalline Al2O3/NiAl(100) template

Wen-Chin Lin, Chien-Cheng Kuo, Meng-Fan Luo, Ker-Jar Song, and Minn-Tsong Lin

Appl. Phys. Lett. 86, 043105 (2005); http://dx.doi.org/10.1063/1.1855410 (3 pages) | Cited 20 times

Online Publication Date: 19 January 2005

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We present Co nanoparticle chains grown by vapor deposition over a single-crystalline Al2O3 layers on NiAl(100) with such features as self-limiting size distribution with the average size of ∼ 2.7 nm, well-ordered alignment, and high thermal stability. We attribute these features to peculiar one-dimensional long stripes with ∼ 4 nm interdistance on the surface of the ultrathin Al2O3 template. This nanostructure may open the door to numerous applications, such as catalysis and nanostorage, where large area well-ordered nanodots are desired.
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61.46.-w Structure of nanoscale materials
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.B- Structure of clean surfaces (and surface reconstruction)
65.80.-g Thermal properties of small particles, nanocrystals, nanotubes, and other related systems

Controlled synthesis and manipulation of ZnO nanorings and nanobows

William L. Hughes and Zhong L. Wang

Appl. Phys. Lett. 86, 043106 (2005); http://dx.doi.org/10.1063/1.1853514 (3 pages) | Cited 35 times

Online Publication Date: 19 January 2005

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An experimental procedure is presented for the controlled synthesis and manipulation of ZnO nanorings and nanobows at high purity and large yield. Atomic force microscopy manipulation of the nanostructures demonstrates their mechanical toughness and flexibility. Extensive bending of the nanorings and nanobows suggests an extremely high deformation limit with the potential for building ultrasensitive electromechanical coupled nanoscale sensors, transducers, and resonators.
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81.05.Dz II-VI semiconductors
81.07.Bc Nanocrystalline materials
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
61.46.-w Structure of nanoscale materials
62.25.-g Mechanical properties of nanoscale systems
68.37.Ps Atomic force microscopy (AFM)
68.35.Gy Mechanical properties; surface strains
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity
62.20.M- Structural failure of materials
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
81.16.Ta Atom manipulation

Plasma deposition of thin carbonfluorine films on aligned carbon nanotube

Peng He, Donglu Shi, Jie Lian, L. M. Wang, Rodney C. Ewing, Wim van Ooij, W. Z. Li, and Z. F. Ren

Appl. Phys. Lett. 86, 043107 (2005); http://dx.doi.org/10.1063/1.1846957 (3 pages) | Cited 4 times

Online Publication Date: 19 January 2005

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The thin film of carbonfluorine was deposited on the surfaces of aligned carbon nanotubes using a plasma polymerization treatment. High-resolution transmission electron microscopy images revealed that a thin film of the polymer layer (20 nm) was uniformly deposited on the surfaces of the aligned carbon nanotubes. Time-of-flight secondary ion mass spectroscopy and Fourier transform infrared experiments identified the carbonfluorine thin films on the carbon nanotubes. The plasma deposition mechanism is discussed.
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68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
61.41.+e Polymers, elastomers, and plastics
61.46.-w Structure of nanoscale materials
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
82.80.Rt Time of flight mass spectrometry
68.37.Lp Transmission electron microscopy (TEM)
78.35.+c Brillouin and Rayleigh scattering; other light scattering
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
82.35.Gh Polymers on surfaces; adhesion
78.66.Qn Polymers; organic compounds

Effectiveness of TiN porous templates on the reduction of threading dislocations in GaN overgrowth by organometallic vapor-phase epitaxy

Y. Fu, Y. T. Moon, F. Yun, Ü. Özgür, J. Q. Xie, S. Doğan, H. Morkoç, C. K. Inoki, T. S. Kuan, Lin Zhou, and David J. Smith

Appl. Phys. Lett. 86, 043108 (2005); http://dx.doi.org/10.1063/1.1849833 (3 pages) | Cited 35 times

Online Publication Date: 21 January 2005

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We report on the reduction of threading dislocations in GaN overlayers grown by organometallic vapor phase epitaxy on micro-porous TiN networks. These networks were obtained by in situ annealing of thin Ti layers deposited in a metalization chamber, on the (0001) face of GaN templates. Observations by transmission electron microscopy indicate dislocation reduction by factors of up to 10 in GaN layers grown on TiN networks compared with the control GaN. X-ray diffraction shows that GaN grown on the TiN network has a smaller (102) plane peak width (4.6 arcmin) than the control GaN (7.8 arcmin). In low temperature photoluminescence spectra, a narrow excitonic full-width-at-half-maximum of 2.4 meV was obtained, as compared to 3.0 meV for the control GaN, confirming the improved crystalline quality of the overgrown GaN layers.
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81.05.Ea III-V semiconductors
81.05.Rm Porous materials; granular materials
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.55.Cr III-V semiconductors
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
78.66.Fd III-V semiconductors
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
61.43.Gt Powders, porous materials
78.55.Mb Porous materials
78.66.Nk Insulators
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.72.Cc Kinetics of defect formation and annealing
71.35.-y Excitons and related phenomena
68.37.Lp Transmission electron microscopy (TEM)

Controlled fabrication of nanogaps in ambient environment for molecular electronics

D. R. Strachan, D. E. Smith, D. E. Johnston, T.-H. Park, Michael J. Therien, D. A. Bonnell, and A. T. Johnson

Appl. Phys. Lett. 86, 043109 (2005); http://dx.doi.org/10.1063/1.1857095 (3 pages) | Cited 91 times

Online Publication Date: 21 January 2005

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We have developed a controlled and highly reproducible method of making nanometer-spaced electrodes using electromigration in ambient lab conditions. This advance will make feasible single molecule measurements of macromolecules with tertiary and quaternary structures that do not survive the liquid-helium temperatures at which electromigration is typically performed. A second advance is that it yields gaps of desired tunneling resistance, as opposed to the random formation at liquid-helium temperatures. Nanogap formation occurs through three regimes: First it evolves through a bulk-neck regime where electromigration is triggered at constant temperature, then to a few-atom regime characterized by conductance quantum plateaus and jumps, and finally to a tunneling regime across the nanogap once the conductance falls below the conductance quantum.
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81.07.Nb Molecular nanostructures
81.16.Nd Micro- and nanolithography
66.30.Qa Electromigration
73.63.-b Electronic transport in nanoscale materials and structures
61.46.-w Structure of nanoscale materials
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.40.Gk Tunneling

Giant barrier layer capacitance effects in the lithium ion conducting material La0.67Li0.25Ti0.75Al0.25O3

Susana García-Martín, Ainhoa Morata-Orrantia, Myriam H. Aguirre, and Miguel Á. Alario-Franco

Appl. Phys. Lett. 86, 043110 (2005); http://dx.doi.org/10.1063/1.1852717 (3 pages) | Cited 9 times

Online Publication Date: 21 January 2005

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High dielectric permittivity (ε′ ∼ 500 000) has been observed in polycrystalline samples of La0.67Li0.25Ti0.75Al0.25O3 over a large frequency range ( ∼ 10<f< ∼ 103 Hz) and different temperatures. Complex impedance spectroscopy measurements demonstrate that the origin of the high dielectric constant can be attributed to a barrier layer capacitor associated with grain boundary effects in the ion conducting material.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.22.Ch Permittivity (dielectric function)
66.30.H- Self-diffusion and ionic conduction in nonmetals
61.72.Mm Grain and twin boundaries
82.80.Fk Electrochemical methods
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