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24 Jan 2005

Volume 86, Issue 4, Articles (04xxxx)

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Appl. Phys. Lett. 86, 043106 (2005); http://dx.doi.org/10.1063/1.1853514 (3 pages)

William L. Hughes and Zhong L. Wang
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Thermal oxidation of porous silicon: Study on structure

A. E. Pap, K. Kordás, G. Tóth, J. Levoska, A. Uusimäki, J. Vähäkangas, S. Leppävuori, and T. F. George

Appl. Phys. Lett. 86, 041501 (2005); http://dx.doi.org/10.1063/1.1853519 (3 pages) | Cited 20 times

Online Publication Date: 18 January 2005

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The structural changes of porous silicon (PS) samples during oxidation are investigated and analyzed using various microscopy techniques and x-ray diffraction. It is found that the surface roughness of oxidized PS layers increases with the oxidation at 200–400 °C and decreased at 600–800 °C. At 800 °C a partially fused surface is observed. The oxide formed on the wall of porous silicon skeleton is amorphous. The shifts of Si(400) peaks are observed in the x-ray diffraction patterns, which are correlated to the lattice deformation induced by thermal expansion coefficient mismatch between the grown SiO2 and the residual Si, and to the intrinsic stress caused by the Si–O bonds at the Si–SiO2 interface. These explanations are supported by thermomechanical modeling using three-dimensional finite element method.
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81.05.Cy Elemental semiconductors
81.05.Rm Porous materials; granular materials
81.65.Mq Oxidation
61.43.Gt Powders, porous materials
68.35.B- Structure of clean surfaces (and surface reconstruction)
65.60.+a Thermal properties of amorphous solids and glasses: heat capacity, thermal expansion, etc.
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity

Effect of the electrostatic plasma lens on the emittance of a high-current heavy ion beam

Yu. Chekh, A. Goncharov, I. Protsenko, and I. G. Brown

Appl. Phys. Lett. 86, 041502 (2005); http://dx.doi.org/10.1063/1.1855428 (3 pages) | Cited 5 times

Online Publication Date: 20 January 2005

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We describe measurements we have made of the emittance of a high-current, moderate-energy ion beam after transport through a permanent-magnet electrostatic plasma lens. The results indicate the absence of emittance growth due to the lens, when the lens is adjusted for optimal beam focusing. The measured normalized emittance for a 32 keV Cu2+ ion beam formed by a vacuum arc ion source was 0.6 π mm mrad at a beam current of 50 mA rising more-or-less linearly to 2.2 π mm mrad at 250 mA, and was conserved in beam transport through the lens. These results have significance for the application of high-current ion sources and the electrostatic plasma lens to particle accelerator injection.
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41.85.Ne Electrostatic lenses, septa
52.75.-d Plasma devices
52.59.Wd Emittance-dominated beams
41.85.Lc Particle beam focusing and bending magnets, wiggler magnets, and quadrupoles
29.27.Eg Beam handling; beam transport
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