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31 Jan 2005

Volume 86, Issue 5, Articles (05xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 86, 052504 (2005); http://dx.doi.org/10.1063/1.1855413 (3 pages)

Sang-Koog Kim, Ki-Suk Lee, Byoung-Woo Kang, Kyung-Jin Lee, and J. B. Kortright
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Photonic band gaps and defect modes of polymer photonic crystal slabs

Chul-Sik Kee, Sang-Pil Han, Keun Byoung Yoon, Choon-Gi Choi, Hee Kyung Sung, Sang Soon Oh, Hae Yong Park, Sunggook Park, and Helmut Schift

Appl. Phys. Lett. 86, 051101 (2005); http://dx.doi.org/10.1063/1.1857069 (3 pages) | Cited 7 times

Online Publication Date: 24 January 2005

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We show from the photonic band calculation and the finite difference time domain simulation that polymer photonic crystal slabs with a triangular array of air holes can exhibit complete photonic band gaps for transverse electric-like modes. A line defect introduced in the polymer photonic crystal slab can create guided modes which are useful in implementing low loss waveguides. We also show that thermal nanoimprint lithography is an attractive way to pattern the triangular array of air holes with high aspect ratio, which is a necessary step in the realization of the polymer photonic crystal slab.
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42.70.Qs Photonic bandgap materials
42.70.Jk Polymers and organics
42.82.Cr Fabrication techniques; lithography, pattern transfer
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.16.Nd Micro- and nanolithography
78.66.Qn Polymers; organic compounds
61.41.+e Polymers, elastomers, and plastics
68.55.-a Thin film structure and morphology
61.72.J- Point defects and defect clusters

Fabrication of surface relief gratings on azo dye thin films utilizing an interference of evanescent waves

Yasuo Ohdaira, Satoshi Hoshiyama, Takahiro Kawakami, Kazunari Shinbo, Keizo Kato, and Futao Kaneko

Appl. Phys. Lett. 86, 051102 (2005); http://dx.doi.org/10.1063/1.1857070 (3 pages) | Cited 14 times

Online Publication Date: 24 January 2005

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Fabrication of surface relief gratings (SRGs) on azo dye thin films has been investigated utilizing an interference of evanescent waves. SRGs of approximately 210 nm were inscribed on the photoisomerized azo dye films, that were smaller than a half wavelength of an incidence laser of 488.0 nm. The films were set on a right-angled triangular prism surface and were in the interference of evanescent waves of totally reflected laser beams at the prism surface. The interference at the surface was performed using a laser beam through the one side of the isosceles and the returned beam at the other side of the isosceles where a mirror was set. The SRG patterns of azo dye films due to trans–cis transition of the dyes were observed in situ using an atomic force microscope above the prism surface.
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42.79.Dj Gratings
42.79.Bh Lenses, prisms and mirrors
42.82.Cr Fabrication techniques; lithography, pattern transfer

Electrical tuning of three-dimensional photonic crystals using polymer dispersed liquid crystals

Dennis McPhail, Martin Straub, and Min Gu

Appl. Phys. Lett. 86, 051103 (2005); http://dx.doi.org/10.1063/1.1861131 (3 pages) | Cited 15 times

Online Publication Date: 27 January 2005

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Electrically tunable three-dimensional photonic crystals with a tunable wavelength range of over 70 nm of stop gaps between 3 and 4 μm have been generated in a liquid crystal-polymer composite. The photonic crystals were fabricated by femtosecond-laser direct writing of void channels in an inverse woodpile configuration with 20 layers providing an extinction of infrared light transmission of 70% in the stacking direction. Stable structures could be manufactured up to a liquid crystal concentration of 24%. Applying a direct voltage of several hundred volts in the stacking direction of the photonic crystal changes the alignment of the liquid crystal directors and hence the average refractive index of the structure. This mechanism permits the direct tuning of the photonic stop gap.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.10.-h Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

Fe-implanted InGaAs terahertz emitters for 1.56 μm wavelength excitation

Masato Suzuki and Masayoshi Tonouchi

Appl. Phys. Lett. 86, 051104 (2005); http://dx.doi.org/10.1063/1.1861495 (3 pages) | Cited 37 times

Online Publication Date: 27 January 2005

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We have measured the terahertz (THz) radiations from unimplanted and Fe-implanted In0.53Ga0.47As photoconductive switches excited by the femtosecond laser pulse of 1.56 μm wavelength. It has been also observed that the amplitude of the radiated wave form from these photoswitches deviates from linear behavior, and saturates with increase in the power of excitation pulse. Fe implantation to the samples leads to about 1.2 times decrease in the pulse width of radiated THz wave form and 6.5 times reduction in the carrier mobility compared to the unimplanted sample.
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85.60.Bt Optoelectronic device characterization, design, and modeling
07.57.Hm Infrared, submillimeter wave, microwave, and radiowave sources
78.47.-p Spectroscopy of solid state dynamics
78.70.Gq Microwave and radio-frequency interactions
72.20.Fr Low-field transport and mobility; piezoresistance

Observations of gain on the I(math→math) transition by energy transfer from O2(a math) generated by a microwave discharge in a subsonic-flow reactor

W. T. Rawlins, S. Lee, W. J. Kessler, and S. J. Davis

Appl. Phys. Lett. 86, 051105 (2005); http://dx.doi.org/10.1063/1.1861503 (3 pages) | Cited 35 times

Online Publication Date: 27 January 2005

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The excitation of I(math) in the reactions of discharge-generated O2(a math) and O(math) with I2 has been investigated in a microwave discharge-flow reactor at 1.5 Torr and ∼ 350 K using a suite of optical absorption and emission diagnostics to detect O2(a math), O, I(math), and I(math) with high sensitivity. For O2(a math) yields of 0.20–0.25 generated by the microwave discharge, positive gain on the I(math→math) transition at 1.315 μm was observed when O concentrations were reduced by reaction with added NO2. The results imply quenching mechanisms for I(math) which are much faster than direct collisional deactivation by O.
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42.55.Ks Chemical lasers
42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
82.40.-g Chemical kinetics and reactions: special regimes and techniques

Ultraviolet and white photon avalanche upconversion in Ho3+-doped nanophase glass ceramics

F. Lahoz, I. R. Martín, and J. M. Calvilla-Quintero

Appl. Phys. Lett. 86, 051106 (2005); http://dx.doi.org/10.1063/1.1861975 (3 pages) | Cited 31 times

Online Publication Date: 27 January 2005

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Ho3+-doped fluoride nanophase glass ceramics have been synthesized from silica-based oxyfluoride glass. An intense white emission light is observed by the naked eye under near infrared excitation at 750 nm. This visible upconversion is due to three strong emission bands in the primary color components, red, green, and blue. Besides, ultraviolet signals are also recorded upon the same excitation wavelength. The excitation mechanism of both the ultraviolet and the visible emissions is a photon avalanche process with a relatively low pump power threshold at about 20 mW. The total upconverted emission intensity has been estimated to increase by about a factor of 20 in the glass ceramic compared to the precursor glass, in which an avalanche type mechanism is not generated.
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81.05.Pj Glass-based composites, vitroceramics
81.07.Bc Nanocrystalline materials
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
78.55.Qr Amorphous materials; glasses and other disordered solids
81.16.-c Methods of micro- and nanofabrication and processing
64.70.D- Solid-liquid transitions
64.75.-g Phase equilibria

Widely tunable ultraviolet-visible liquid crystal laser

Andro Chanishvili, Guram Chilaya, Gia Petriashvili, Riccardo Barberi, Roberto Bartolino, Gabriella Cipparrone, Alfredo Mazzulla, Raquel Gimenez, Luis Oriol, and Milagros Pinol

Appl. Phys. Lett. 86, 051107 (2005); http://dx.doi.org/10.1063/1.1855405 (3 pages) | Cited 41 times

Online Publication Date: 27 January 2005

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Quasicontinuous tuning of a dye doped cholesteric liquid crystal (CLC) mirrorless laser in the ultraviolet-visible wavelength range is demonstrated using a single original device based on CLC as resonator and several resonant dyes. The thought is to combine the CLC pitch gradient and the distribution of different dyes. In the same cell, six dyes are combined in order to nearly cover the whole wavelength range from ultraviolet (370 nm) to red (680 nm). Some of the used dyes work as emitter, while others work in the Förster regime to decouple the excitation and emission processes. The relevant aspect of the device is that a simple translation of the cell respect to the same pump beam enables fine tuning of the laser wavelength in almost all the visible range, up to the ultraviolet.
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42.55.Mv Dye lasers
42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.70.Df Liquid crystals

Reflectivity behavior of two-dimensional ordered array of metallodielectric composite particles at large incidence angles

P. Zhan, J. B. Liu, W. Dong, H. Dong, Z. Chen, Z. L. Wang, Y. Zhang, S. N. Zhu, and N. B. Ming

Appl. Phys. Lett. 86, 051108 (2005); http://dx.doi.org/10.1063/1.1857086 (3 pages) | Cited 13 times

Online Publication Date: 27 January 2005

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Optical reflectance of a two-dimensional (2D) metallodielectric (MD) photonic crystal composed of hexagonal array of close-packed silver-shell polystyrene-core composite particles has been studied at off-normal incidence under both P and S polarizations. A dramatic change in reflectivity behavior of the 2D MD film from a 2D colloidal crystal template and a homogeneous silver film has been observed. The phenomenon of strong reflectance bands of the 2D MD film was explained as a selective coupling of the incident light with surface plasmon of the 2D textured structure via the 2D grating.
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42.70.Qs Photonic bandgap materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.68.+m Optical properties of surfaces
78.66.Sq Composite materials
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology
78.35.+c Brillouin and Rayleigh scattering; other light scattering
78.30.Er Solid metals and alloys
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

All-optical switching in a liquid crystalline waveguide

Andrea Fratalocchi and Gaetano Assanto

Appl. Phys. Lett. 86, 051109 (2005); http://dx.doi.org/10.1063/1.1861114 (3 pages) | Cited 8 times

Online Publication Date: 28 January 2005

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We demonstrate an all-optical switch based on mode mixing in a liquid crystalline waveguide defined by an external voltage. Efficient switching and rerouting can be achieved with good contrast at low powers in the whole transparency region.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.82.Et Waveguides, couplers, and arrays

Effect of optical excitation energy on the red luminescence of Eu3+ in GaN

H. Y. Peng, C. W. Lee, H. O. Everitt, D. S. Lee, A. J. Steckl, and J. M. Zavada

Appl. Phys. Lett. 86, 051110 (2005); http://dx.doi.org/10.1063/1.1861132 (3 pages) | Cited 18 times

Online Publication Date: 28 January 2005

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Photoluminescence (PL) excitation spectroscopy mapped the photoexcitation wavelength dependence of the red luminescence (math→math) from GaN:Eu. Time-resolved PL measurements revealed that for excitation at the GaN bound exciton energy, the decay transients are almost temperature insensitive between 86 K and 300 K, indicating an efficient energy transfer process. However, for excitation energies above or below the GaN bound exciton energy, the decaying luminescence indicates excitation wavelength- and temperature-dependent energy transfer influenced by intrinsic and Eu3+-related defects.
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78.66.Fd III-V semiconductors
71.55.Eq III-V semiconductors
71.35.Cc Intrinsic properties of excitons; optical absorption spectra

Phase control of a stimulated Brillouin scattering phase conjugate mirror by a self-generated density modulation

Hong Jin Kong, Seong Ku Lee, Dong Won Lee, and Hong Guo

Appl. Phys. Lett. 86, 051111 (2005); http://dx.doi.org/10.1063/1.1857088 (3 pages) | Cited 18 times

Online Publication Date: 28 January 2005

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We report that the phase of a backward wave by stimulated Brillouin scattering (SBS) can be controlled by a self-generated density modulation without any backward Stokes seed beam, which is generated due to electrostriction induced by electromagnetic standing wave through the interferences between the main beam and the low intensity counter-propagating beam. The density modulation ignites the position of the Brillouin grating so that the phase of the backward SBS can be controlled. We obtained 96% success with the phase error less than a quarter wave under a proper scheme of the self-seeding methods. This phase control technique is so simple, scalable, and very efficient that it can be applied to many beam combination systems for a high power laser system with a high repetition rate over 10 Hz.
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42.60.Fc Modulation, tuning, and mode locking
42.79.Bh Lenses, prisms and mirrors
42.65.Es Stimulated Brillouin and Rayleigh scattering
78.35.+c Brillouin and Rayleigh scattering; other light scattering
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

All-optical switching and beam steering in tunable waveguide arrays

Andrea Fratalocchi, Gaetano Assanto, Kasia A. Brzdąkiewicz, and Mirek A. Karpierz

Appl. Phys. Lett. 86, 051112 (2005); http://dx.doi.org/10.1063/1.1857071 (3 pages) | Cited 9 times

Online Publication Date: 28 January 2005

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We demonstrate all-optical switching by discrete beam steering in a voltage-controlled array of channel waveguides in nematic liquid crystals. The model keeps into account the reorientational response of the medium and are in agreement with the experimental data.
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42.79.Gn Optical waveguides and couplers
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
78.20.Jq Electro-optical effects
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
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Characterization of extreme ultraviolet emission from laser-produced spherical tin plasma generated with multiple laser beams

Y. Shimada, H. Nishimura, M. Nakai, K. Hashimoto, M. Yamaura, Y. Tao, K. Shigemori, T. Okuno, K. Nishihara, T. Kawamura, A. Sunahara, T. Nishikawa, A. Sasaki, K. Nagai, T. Norimatsu, et al.

Appl. Phys. Lett. 86, 051501 (2005); http://dx.doi.org/10.1063/1.1856697 (3 pages) | Cited 56 times

Online Publication Date: 24 January 2005

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Spherical solid tin targets were illuminated uniformly with twelve beams from the Gekko XII laser system to create spherical plasmas, and the extreme ultraviolet (EUV) emission spectra from the plasmas were measured. The highest conversion efficiency of 3% to 13.5 nm EUV light in 2% bandwidth was attained for an irradiance of around 5×1010 W/cm2. The experimental results were reproduced fairly well using a theoretical model taking the power balance in the plasma into consideration.
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
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Extended defects in epitaxial Sc2O3 films grown on (111) Si

Dmitri O. Klenov, Lisa F. Edge, Darrell G. Schlom, and Susanne Stemmer

Appl. Phys. Lett. 86, 051901 (2005); http://dx.doi.org/10.1063/1.1857068 (3 pages) | Cited 18 times

Online Publication Date: 24 January 2005

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Epitaxial Sc2O3 films with the cubic bixbyite structure were grown on (111) Si by reactive molecular beam epitaxy. High-resolution transmission electron microscopy (HRTEM) revealed an abrupt, reaction-layer free interface between Sc2O3 and Si. The ∼ 10% lattice mismatch between Si and Sc2O3 was relieved by the formation of a hexagonal misfit dislocation network with Burgers vectors of 1/2〈math10〉Si and line directions parallel to 〈11math〉Si. A high density of planar defects and threading dislocations was observed. Analysis of lattice shifts across the planar defects in HRTEM showed that these faults were likely antiphase boundaries (APBs). ABPs form when film islands coalesce during growth because films nucleate with no unique arrangement of the ordered oxygen vacancies in the bixbyite structure relative to the Si lattice.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
61.72.Nn Stacking faults and other planar or extended defects
68.55.-a Thin film structure and morphology
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.35.Ct Interface structure and roughness
61.72.J- Point defects and defect clusters
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.A- Nucleation and growth
68.37.Lp Transmission electron microscopy (TEM)

Phase-change recording medium that enables ultrahigh-density electron-beam data storage

G. A. Gibson, A. Chaiken, K. Nauka, C. C. Yang, R. Davidson, A. Holden, R. Bicknell, B. S Yeh, J. Chen, H. Liao, S. Subramanian, D. Schut, J. Jasinski, and Z. Liliental-Weber

Appl. Phys. Lett. 86, 051902 (2005); http://dx.doi.org/10.1063/1.1856690 (3 pages) | Cited 11 times

Online Publication Date: 25 January 2005

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An ultrahigh-density electron-beam-based data storage medium is described that consists of a diode formed by growing an InSe/GaSe phase-change bilayer film epitaxially on silicon. Bits are recorded as amorphous regions in the InSe layer and are detected via the current induced in the diode by a scanned electron beam. This signal current is modulated by differences in the electrical properties of the amorphous and crystalline states. The success of this recording scheme results from the remarkable ability of layered III-VI materials, such as InSe, to maintain useful electrical properties at their surfaces after repeated cycles of amorphization and recrystallization.
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85.30.Kk Junction diodes
42.79.Vb Optical storage systems, optical disks
61.82.Fk Semiconductors
64.70.K- Solid-solid transitions
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
61.80.Fe Electron and positron radiation effects

Microcontact patterning of ruthenium gate electrodes by selective area atomic layer deposition

K. J. Park, J. M. Doub, T. Gougousi, and G. N. Parsons

Appl. Phys. Lett. 86, 051903 (2005); http://dx.doi.org/10.1063/1.1852079 (3 pages) | Cited 34 times

Online Publication Date: 26 January 2005

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Patterned octadecyltrichlorosilane monolayers are used to inhibit film nucleation, enabling selective area atomic layer deposition (ALD) of ruthenium on SiO2 and HfO2 surfaces using bis-(cyclopentadienyl)ruthenium and oxygen. X-ray photoelectron spectroscopy indicated that OTS could deactivate film growth on thermal silicon oxide and hafnium oxide surfaces. The growth rate of ALD Ru is similar on various starting surfaces, but the growth initiation differed substantially. Metal-oxide-semiconductor capacitors were fabricated directly using the selective-area process. Capacitance measurements indicate the effective work function of ALD Ru is 4.84±0.1 eV on SiO2, and the effective work function is reduced on HfO2∕SiO2 layers.
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84.32.Tt Capacitors
68.55.A- Nucleation and growth
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
85.30.Tv Field effect devices
79.60.Bm Clean metal, semiconductor, and insulator surfaces
79.60.Jv Interfaces; heterostructures; nanostructures
79.60.Dp Adsorbed layers and thin films

Transmission electron microscopy based study of epitaxy in Nb/(100)Cu bilayer and Cu/Nb/(100)Cu trilayer nanoscale films

D. Mitlin, A. K. Schmid, and V. Radmilovic

Appl. Phys. Lett. 86, 051904 (2005); http://dx.doi.org/10.1063/1.1850195 (3 pages)

Online Publication Date: 26 January 2005

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We used transmission electron microscopy to detail the structure of Nb/Cu(100) thin films and Cu/Nb/Cu(100) trilayers grown by physical vapor deposition. The two dominant orientation relationships that exist between the Nb and the Cu are the Bain and the Kurdjumov–Sachs (K-S). However, there is an angular spread in these orientations, which is evident in the selected-area diffraction patterns and in the high-resolution transmission electron microscope images. The first several monolayers of Nb maintain a Bain orientation relationship with the Cu substrate. As the overlayer thickness increases, the Nb grains begin to tilt away from the Bain orientation, around the [010] Cu direction, creating a “domino-like” microstructure. This tilting is associated with the presence of dislocations in the Nb, with the projection of their Burgers vector perpendicular to the Nb/Cu interface. The dislocations are located several monolayers offset from the interface. The K-S grains are observed to heterogeneously nucleate near the dislocation cores. Surprisingly, when Cu is deposited to cap the Nb films, the overlayer grows as a single crystal in a Bain orientation with the underlying Nb, essentially ignoring the K-S oriented grains.
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68.65.Ac Multilayers
68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.37.Lp Transmission electron microscopy (TEM)
61.72.Mm Grain and twin boundaries

Group-V intermixing in InAs/InP quantum dots

C. K. Chia, S. J. Chua, S. Tripathy, and J. R. Dong

Appl. Phys. Lett. 86, 051905 (2005); http://dx.doi.org/10.1063/1.1861500 (3 pages) | Cited 26 times

Online Publication Date: 27 January 2005

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Postgrowth intermixing in InAs/InP quantum dot (QD) structures have been investigated by rapid thermal annealing and laser irradiation techniques. In both cases, room-temperature photoluminescence (PL) measured from the QD structures after intermixing shows a substantial blueshift accompanied by an improvement in PL intensity and a reduction in linewidth. In the case of impurity free vacancy disordering, an energy shift of up to 350 meV has been achieved. The maximum differential energy shift for samples capped with SiO2 and SiNx dielectrics was found to be 90 meV. On the other hand, laser-induced intermixing allows differential energy shifts of more than 250 meV in this material system. Micro-Raman measurement shows the appearance of InAs-type and InP-type optical phonon peaks from laser-annealed InAs/InP QDs due to the exchange of As and P at the QD interfaces.
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81.07.Ta Quantum dots
81.05.Ea III-V semiconductors
78.67.Hc Quantum dots
78.55.Cr III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
61.82.Fk Semiconductors
81.40.Tv Optical and dielectric properties related to treatment conditions
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.72.Cc Kinetics of defect formation and annealing
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials

Effects in synergistic blistering of silicon by coimplantation of H, D, and He ions

O. Moutanabbir and B. Terreault

Appl. Phys. Lett. 86, 051906 (2005); http://dx.doi.org/10.1063/1.1861502 (3 pages) | Cited 10 times

Online Publication Date: 27 January 2005

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Silicon blistering was achieved at unprecedently low ion fluences of 2×1015 He/cm2 (8 keV) followed by 6×1015 H/cm2 (5 keV), but no blistering occurs for reversed order (H+He), or (He+D) coimplantation up to a high fluence. Raman scattering data suggest that: (i) the He synergy is due to He assistance in the appearance of H-passivated internal surfaces and their pressurization at high temperature; (ii) the order effect is due to the destruction by the room-temperature He postbombardment of favorable Si–H structures; and (iii) the isotope effect is due to the deuterated multivacancies evolving into surprisingly stable interstitial and bond-centered configurations.
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61.72.uf Ge and Si
61.72.J- Point defects and defect clusters
71.55.Cn Elemental semiconductors
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
78.30.Am Elemental semiconductors and insulators

Shock induced amorphization as the onset of spall

Yinon Ashkenazy and Robert S. Averback

Appl. Phys. Lett. 86, 051907 (2005); http://dx.doi.org/10.1063/1.1861974 (3 pages) | Cited 11 times

Online Publication Date: 27 January 2005

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Spall formation in the glass-forming alloy Cu–Ti was studied via molecular dynamics simulations. It is shown that spall initiation is a combined process where void nucleation is accompanied by local amorphization. The amorphous regions nucleate at the surfaces of the voids at a critical stress and then grow, allowing the voids to grow faster in the mechanically less stable amorphous region. Dislocations are emitted from the amorphous regions and form shear bands between the amorphous regions. Subspall events result in the formation of a damaged layer, including voids, amorphous regions, and shear bands. The simulations are consistent with recent experimental observation of intergranular amorphous bands in shocked boron carbide.
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61.43.Fs Glasses
62.50.-p High-pressure effects in solids and liquids
61.43.Dq Amorphous semiconductors, metals, and alloys
61.43.Bn Structural modeling: serial-addition models, computer simulation

Ultrafast photoresponse at 1.55 μm in InGaAs with embedded semimetallic ErAs nanoparticles

D. C. Driscoll, M. P. Hanson, A. C. Gossard, and E. R. Brown

Appl. Phys. Lett. 86, 051908 (2005); http://dx.doi.org/10.1063/1.1852092 (3 pages) | Cited 23 times

Online Publication Date: 27 January 2005

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We have grown epitaxial metal/semiconductor superlattice materials by molecular beam epitaxy that exhibit subpicosecond photocarrier lifetimes at 1.55 μm. The superlattice samples consist of layers of semimetallic ErAs nanoparticles embedded in a semiconducting In0.53Ga0.47As matrix. Time-resolved optical measurements are performed using a fiber-based transmission pump-probe technique with an erbium-doped-fiber mode-locked laser. Photocarrier lifetimes decrease with increasing ErAs deposition and decreasing spacing between the ErAs layers. Further reduction in the lifetime is achieved by selective beryllium doping of the superlattice; measured lifetimes ⩽ 0.3 ps were achieved in optimized structures.
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73.61.Ey III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
78.47.-p Spectroscopy of solid state dynamics
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
68.65.Cd Superlattices
61.72.S- Impurities in crystals
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Depth distribution of B implanted in Si after excimer laser irradiation

Giovanni Mannino, Vittorio Privitera, Antonino La Magna, Emanuele Rimini, Enrico Napolitani, Guglielmo Fortunato, and Luigi Mariucci

Appl. Phys. Lett. 86, 051909 (2005); http://dx.doi.org/10.1063/1.1856696 (3 pages) | Cited 8 times

Online Publication Date: 28 January 2005

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Liquid phase epitaxial regrowth following laser melting significantly modifies the concentration of point defects in Si, such that peculiar depth distribution of subsequently implanted B arises. At room temperature, a large fraction of B atoms, ∼ 15%, implanted in laser preirradiated Si, migrate up to the original melt depth. During high temperature annealing, the nonequilibrium diffusion of B is reduced to ∼ 25% of that measured in unirradiated Si. Both these phenomena are conclusively attributed to an excess of vacancies, induced in the lattice during solidification and to their interaction with impurities and dopant.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.S- Impurities in crystals
61.72.uf Ge and Si
66.30.J- Diffusion of impurities
61.72.Yx Interaction between different crystal defects; gettering effect
66.30.Lw Diffusion of other defects
61.82.Fk Semiconductors
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.72.J- Point defects and defect clusters
61.72.Cc Kinetics of defect formation and annealing
81.30.Fb Solidification
64.70.D- Solid-liquid transitions
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Role of growth conditions on magnetic properties of AlCrN grown by molecular beam epitaxy

R. M. Frazier, G. T. Thaler, J. Y. Leifer, J. K. Hite, B. P. Gila, C. R. Abernathy, and S. J. Pearton

Appl. Phys. Lett. 86, 052101 (2005); http://dx.doi.org/10.1063/1.1857074 (3 pages) | Cited 32 times

Online Publication Date: 25 January 2005

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AlCrN layers were grown by gas source molecular beam epitaxy with varying amounts of Cr (up to ∼ 3 at. %) under a broad range of Cr cell temperatures and V/III ratio. Magnetic measurements performed in a superconducting quantum interference device magnetometer showed evidence of ferromagnetism up to 350 K in single phase material. Magnetization dependence on dopant cell temperature and V/III was used to optimize the growth conditions of the AlCrN layers. The single-phase material was highly insulating ( ∼ 1010 Ω cm), while the material containing second phases (predominantly Cr2N and AlxCry) was conducting with resistivity of order 1000 Ω cm. High resolution x-ray diffraction rocking curves indicated high crystalline quality in the single phase material.
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75.50.Pp Magnetic semiconductors
75.50.Dd Nonmetallic ferromagnetic materials
75.70.Ak Magnetic properties of monolayers and thin films
73.61.Ey III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
68.55.-a Thin film structure and morphology
68.55.Nq Composition and phase identification

Coulomb blockade directional coupler

P. Pingue, V. Piazza, F. Beltram, I. Farrer, D. A. Ritchie, and M. Pepper

Appl. Phys. Lett. 86, 052102 (2005); http://dx.doi.org/10.1063/1.1857078 (3 pages) | Cited 10 times

Online Publication Date: 26 January 2005

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A tunable directional coupler based on Coulomb blockade effect is presented. Two electron waveguides are coupled by a quantum dot to an injector waveguide. Electron confinement is obtained by surface Schottky gates on a single GaAs/AlGaAs heterojunction. Magneto-electrical measurements down to 350 mK are presented and large transconductance oscillations are reported on both outputs up to 4.2 K. Experimental results are interpreted in terms of Coulomb blockade effect and the relevance of the present design strategy for the implementation of an electronic multiplexer is underlined.
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85.35.Ds Quantum interference devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.23.Hk Coulomb blockade; single-electron tunneling
75.80.+q Magnetomechanical effects, magnetostriction
73.40.Ns Metal-nonmetal contacts
73.30.+y Surface double layers, Schottky barriers, and work functions

Effect of low-temperature-grown GaN cap layer on reduced leakage current of GaN Schottky diodes

J. K. Sheu, M. L. Lee, and W. C. Lai

Appl. Phys. Lett. 86, 052103 (2005); http://dx.doi.org/10.1063/1.1861113 (3 pages) | Cited 19 times

Online Publication Date: 27 January 2005

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In this study, GaN Schottky barrier diodes (SBDs) were grown by organometallic vapor phase epitaxy (OMVPE). It was found that we could significantly reduce reverse-bias leakage current by introducing a low-temperature-grown (LTG) GaN layer on top of the conventional GaN SBDs. The reduction has a factor of 3–4 in a typical GaN∕Ni∕Au SBD having LTG GaN cap layer. Atomic force microscopy showed that surface pits of threading dislocation (TD) termination did not almost observed as the LTG GaN cap layer was grown to be disposed on a typical high-temperature (HT) GaN layer. Therefore, this reduction in leakage current could be related to the reduction of surface pit densities of threading dislocation termination by using LTG GaN cap layers. This might be due to the suppression of surface states existing in the vicinity of TD terminations.
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81.05.Bx Metals, semimetals, and alloys
81.15.Kk Vapor phase epitaxy; growth from vapor phase
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