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31 Jan 2005

Volume 86, Issue 5, Articles (05xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 86, 052504 (2005); http://dx.doi.org/10.1063/1.1855413 (3 pages)

Sang-Koog Kim, Ki-Suk Lee, Byoung-Woo Kang, Kyung-Jin Lee, and J. B. Kortright
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Erratum: “An electrostatic barrier to trap filling in CuIn1−xGaxSe2” [Appl. Phys. Lett. 83, 2363 (2003)]

David L. Young and Richard S. Crandall

Appl. Phys. Lett. 86, 059901 (2005); http://dx.doi.org/10.1063/1.1856693 (1 page)

Online Publication Date: 25 January 2005

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99.10.Cd Errata
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
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Publisher’s Note: “Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing” [ Appl. Phys. Lett. 85, 5254 (2004) ]

Haijiang Yu, L. McCarthy, H. Xing, P. Waltereit, L. Shen, S. Keller, S. P. Denbaars, J. S. Speck, and U. K. Mishra

Appl. Phys. Lett. 86, 059902 (2005); http://dx.doi.org/10.1063/1.1860578 (1 page)

Online Publication Date: 26 January 2005

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99.10.Fg Publisher's note
61.72.Cc Kinetics of defect formation and annealing
61.72.uj III-V and II-VI semiconductors
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Erratum: “Enhanced photoluminescence of InAs self-assembled quantum dots grown by molecular-beam epitaxy using a “nucleation-augmented” method” [ Appl. Phys. Lett. 85, 567 (2004) ]

C. K. Chia, S. J. Chua, Z. L. Miao, and Y. H. Chye

Appl. Phys. Lett. 86, 059903 (2005); http://dx.doi.org/10.1063/1.1856694 (1 page)

Online Publication Date: 27 January 2005

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99.10.Cd Errata
78.67.Hc Quantum dots
78.55.Cr III-V semiconductors
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