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31 Jan 2005

Volume 86, Issue 5, Articles (05xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 86, 052504 (2005); http://dx.doi.org/10.1063/1.1855413 (3 pages)

Sang-Koog Kim, Ki-Suk Lee, Byoung-Woo Kang, Kyung-Jin Lee, and J. B. Kortright
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Extended defects in epitaxial Sc2O3 films grown on (111) Si

Dmitri O. Klenov, Lisa F. Edge, Darrell G. Schlom, and Susanne Stemmer

Appl. Phys. Lett. 86, 051901 (2005); http://dx.doi.org/10.1063/1.1857068 (3 pages) | Cited 19 times

Online Publication Date: 24 January 2005

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Epitaxial Sc2O3 films with the cubic bixbyite structure were grown on (111) Si by reactive molecular beam epitaxy. High-resolution transmission electron microscopy (HRTEM) revealed an abrupt, reaction-layer free interface between Sc2O3 and Si. The ∼ 10% lattice mismatch between Si and Sc2O3 was relieved by the formation of a hexagonal misfit dislocation network with Burgers vectors of 1/2〈math10〉Si and line directions parallel to 〈11math〉Si. A high density of planar defects and threading dislocations was observed. Analysis of lattice shifts across the planar defects in HRTEM showed that these faults were likely antiphase boundaries (APBs). ABPs form when film islands coalesce during growth because films nucleate with no unique arrangement of the ordered oxygen vacancies in the bixbyite structure relative to the Si lattice.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
61.72.Nn Stacking faults and other planar or extended defects
68.55.-a Thin film structure and morphology
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.35.Ct Interface structure and roughness
61.72.J- Point defects and defect clusters
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.A- Nucleation and growth
68.37.Lp Transmission electron microscopy (TEM)

Phase-change recording medium that enables ultrahigh-density electron-beam data storage

G. A. Gibson, A. Chaiken, K. Nauka, C. C. Yang, R. Davidson, A. Holden, R. Bicknell, B. S Yeh, J. Chen, H. Liao, S. Subramanian, D. Schut, J. Jasinski, and Z. Liliental-Weber

Appl. Phys. Lett. 86, 051902 (2005); http://dx.doi.org/10.1063/1.1856690 (3 pages) | Cited 11 times

Online Publication Date: 25 January 2005

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An ultrahigh-density electron-beam-based data storage medium is described that consists of a diode formed by growing an InSe/GaSe phase-change bilayer film epitaxially on silicon. Bits are recorded as amorphous regions in the InSe layer and are detected via the current induced in the diode by a scanned electron beam. This signal current is modulated by differences in the electrical properties of the amorphous and crystalline states. The success of this recording scheme results from the remarkable ability of layered III-VI materials, such as InSe, to maintain useful electrical properties at their surfaces after repeated cycles of amorphization and recrystallization.
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85.30.Kk Junction diodes
42.79.Vb Optical storage systems, optical disks
61.82.Fk Semiconductors
64.70.K- Solid-solid transitions
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
61.80.Fe Electron and positron radiation effects

Microcontact patterning of ruthenium gate electrodes by selective area atomic layer deposition

K. J. Park, J. M. Doub, T. Gougousi, and G. N. Parsons

Appl. Phys. Lett. 86, 051903 (2005); http://dx.doi.org/10.1063/1.1852079 (3 pages) | Cited 34 times

Online Publication Date: 26 January 2005

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Patterned octadecyltrichlorosilane monolayers are used to inhibit film nucleation, enabling selective area atomic layer deposition (ALD) of ruthenium on SiO2 and HfO2 surfaces using bis-(cyclopentadienyl)ruthenium and oxygen. X-ray photoelectron spectroscopy indicated that OTS could deactivate film growth on thermal silicon oxide and hafnium oxide surfaces. The growth rate of ALD Ru is similar on various starting surfaces, but the growth initiation differed substantially. Metal-oxide-semiconductor capacitors were fabricated directly using the selective-area process. Capacitance measurements indicate the effective work function of ALD Ru is 4.84±0.1 eV on SiO2, and the effective work function is reduced on HfO2∕SiO2 layers.
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84.32.Tt Capacitors
68.55.A- Nucleation and growth
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
85.30.Tv Field effect devices
79.60.Bm Clean metal, semiconductor, and insulator surfaces
79.60.Jv Interfaces; heterostructures; nanostructures
79.60.Dp Adsorbed layers and thin films

Transmission electron microscopy based study of epitaxy in Nb/(100)Cu bilayer and Cu/Nb/(100)Cu trilayer nanoscale films

D. Mitlin, A. K. Schmid, and V. Radmilovic

Appl. Phys. Lett. 86, 051904 (2005); http://dx.doi.org/10.1063/1.1850195 (3 pages)

Online Publication Date: 26 January 2005

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We used transmission electron microscopy to detail the structure of Nb/Cu(100) thin films and Cu/Nb/Cu(100) trilayers grown by physical vapor deposition. The two dominant orientation relationships that exist between the Nb and the Cu are the Bain and the Kurdjumov–Sachs (K-S). However, there is an angular spread in these orientations, which is evident in the selected-area diffraction patterns and in the high-resolution transmission electron microscope images. The first several monolayers of Nb maintain a Bain orientation relationship with the Cu substrate. As the overlayer thickness increases, the Nb grains begin to tilt away from the Bain orientation, around the [010] Cu direction, creating a “domino-like” microstructure. This tilting is associated with the presence of dislocations in the Nb, with the projection of their Burgers vector perpendicular to the Nb/Cu interface. The dislocations are located several monolayers offset from the interface. The K-S grains are observed to heterogeneously nucleate near the dislocation cores. Surprisingly, when Cu is deposited to cap the Nb films, the overlayer grows as a single crystal in a Bain orientation with the underlying Nb, essentially ignoring the K-S oriented grains.
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68.65.Ac Multilayers
68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.37.Lp Transmission electron microscopy (TEM)
61.72.Mm Grain and twin boundaries

Group-V intermixing in InAs/InP quantum dots

C. K. Chia, S. J. Chua, S. Tripathy, and J. R. Dong

Appl. Phys. Lett. 86, 051905 (2005); http://dx.doi.org/10.1063/1.1861500 (3 pages) | Cited 26 times

Online Publication Date: 27 January 2005

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Postgrowth intermixing in InAs/InP quantum dot (QD) structures have been investigated by rapid thermal annealing and laser irradiation techniques. In both cases, room-temperature photoluminescence (PL) measured from the QD structures after intermixing shows a substantial blueshift accompanied by an improvement in PL intensity and a reduction in linewidth. In the case of impurity free vacancy disordering, an energy shift of up to 350 meV has been achieved. The maximum differential energy shift for samples capped with SiO2 and SiNx dielectrics was found to be 90 meV. On the other hand, laser-induced intermixing allows differential energy shifts of more than 250 meV in this material system. Micro-Raman measurement shows the appearance of InAs-type and InP-type optical phonon peaks from laser-annealed InAs/InP QDs due to the exchange of As and P at the QD interfaces.
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81.07.Ta Quantum dots
81.05.Ea III-V semiconductors
78.67.Hc Quantum dots
78.55.Cr III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
61.82.Fk Semiconductors
81.40.Tv Optical and dielectric properties related to treatment conditions
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.72.Cc Kinetics of defect formation and annealing
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials

Effects in synergistic blistering of silicon by coimplantation of H, D, and He ions

O. Moutanabbir and B. Terreault

Appl. Phys. Lett. 86, 051906 (2005); http://dx.doi.org/10.1063/1.1861502 (3 pages) | Cited 10 times

Online Publication Date: 27 January 2005

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Silicon blistering was achieved at unprecedently low ion fluences of 2×1015 He/cm2 (8 keV) followed by 6×1015 H/cm2 (5 keV), but no blistering occurs for reversed order (H+He), or (He+D) coimplantation up to a high fluence. Raman scattering data suggest that: (i) the He synergy is due to He assistance in the appearance of H-passivated internal surfaces and their pressurization at high temperature; (ii) the order effect is due to the destruction by the room-temperature He postbombardment of favorable Si–H structures; and (iii) the isotope effect is due to the deuterated multivacancies evolving into surprisingly stable interstitial and bond-centered configurations.
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61.72.uf Ge and Si
61.72.J- Point defects and defect clusters
71.55.Cn Elemental semiconductors
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
78.30.Am Elemental semiconductors and insulators

Shock induced amorphization as the onset of spall

Yinon Ashkenazy and Robert S. Averback

Appl. Phys. Lett. 86, 051907 (2005); http://dx.doi.org/10.1063/1.1861974 (3 pages) | Cited 11 times

Online Publication Date: 27 January 2005

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Spall formation in the glass-forming alloy Cu–Ti was studied via molecular dynamics simulations. It is shown that spall initiation is a combined process where void nucleation is accompanied by local amorphization. The amorphous regions nucleate at the surfaces of the voids at a critical stress and then grow, allowing the voids to grow faster in the mechanically less stable amorphous region. Dislocations are emitted from the amorphous regions and form shear bands between the amorphous regions. Subspall events result in the formation of a damaged layer, including voids, amorphous regions, and shear bands. The simulations are consistent with recent experimental observation of intergranular amorphous bands in shocked boron carbide.
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61.43.Fs Glasses
62.50.-p High-pressure effects in solids and liquids
61.43.Dq Amorphous semiconductors, metals, and alloys
61.43.Bn Structural modeling: serial-addition models, computer simulation

Ultrafast photoresponse at 1.55 μm in InGaAs with embedded semimetallic ErAs nanoparticles

D. C. Driscoll, M. P. Hanson, A. C. Gossard, and E. R. Brown

Appl. Phys. Lett. 86, 051908 (2005); http://dx.doi.org/10.1063/1.1852092 (3 pages) | Cited 23 times

Online Publication Date: 27 January 2005

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We have grown epitaxial metal/semiconductor superlattice materials by molecular beam epitaxy that exhibit subpicosecond photocarrier lifetimes at 1.55 μm. The superlattice samples consist of layers of semimetallic ErAs nanoparticles embedded in a semiconducting In0.53Ga0.47As matrix. Time-resolved optical measurements are performed using a fiber-based transmission pump-probe technique with an erbium-doped-fiber mode-locked laser. Photocarrier lifetimes decrease with increasing ErAs deposition and decreasing spacing between the ErAs layers. Further reduction in the lifetime is achieved by selective beryllium doping of the superlattice; measured lifetimes ⩽ 0.3 ps were achieved in optimized structures.
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73.61.Ey III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
78.47.-p Spectroscopy of solid state dynamics
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
68.65.Cd Superlattices
61.72.S- Impurities in crystals
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Depth distribution of B implanted in Si after excimer laser irradiation

Giovanni Mannino, Vittorio Privitera, Antonino La Magna, Emanuele Rimini, Enrico Napolitani, Guglielmo Fortunato, and Luigi Mariucci

Appl. Phys. Lett. 86, 051909 (2005); http://dx.doi.org/10.1063/1.1856696 (3 pages) | Cited 8 times

Online Publication Date: 28 January 2005

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Liquid phase epitaxial regrowth following laser melting significantly modifies the concentration of point defects in Si, such that peculiar depth distribution of subsequently implanted B arises. At room temperature, a large fraction of B atoms, ∼ 15%, implanted in laser preirradiated Si, migrate up to the original melt depth. During high temperature annealing, the nonequilibrium diffusion of B is reduced to ∼ 25% of that measured in unirradiated Si. Both these phenomena are conclusively attributed to an excess of vacancies, induced in the lattice during solidification and to their interaction with impurities and dopant.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.S- Impurities in crystals
61.72.uf Ge and Si
66.30.J- Diffusion of impurities
61.72.Yx Interaction between different crystal defects; gettering effect
66.30.Lw Diffusion of other defects
61.82.Fk Semiconductors
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.72.J- Point defects and defect clusters
61.72.Cc Kinetics of defect formation and annealing
81.30.Fb Solidification
64.70.D- Solid-liquid transitions
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