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7 Feb 2005

Volume 86, Issue 6, Articles (06xxxx)

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Appl. Phys. Lett. 86, 063101 (2005); http://dx.doi.org/10.1063/1.1861133 (3 pages)

Choongho Yu, Qing Hao, Sanjoy Saha, Li Shi, Xiangyang Kong, and Z. L. Wang
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Characterization of heteroepitaxial Na0.5K0.5NbO3/La0.5Sr0.5CoO3 electro-optical cell

S. I. Khartsev, M. A. Grishin, and A. M. Grishin

Appl. Phys. Lett. 86, 062901 (2005); http://dx.doi.org/10.1063/1.1861121 (3 pages) | Cited 12 times

Online Publication Date: 31 January 2005

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Heteroepitaxial Na0.5K0.5NbO3(1.5 μm)/La0.5Sr0.5CoO3(0.5 μm) (NKN/LSCO) films were grown on an Al2O3(01math2) single crystal (r-cut sapphire) by rf-magnetron sputtering (NKN) and pulsed laser deposition (LSCO) techniques. Prism coupling waveguide refractometry has been employed to characterize vertical capacitive electro-optical cells with 2×8 mm2 semitransparent Au top electrodes. Fitting reflectivity spectra to Fresnel formulas yields extraordinary and ordinary refractive indices ne = 2.232 and no = 2.234 as well as electro-optic coefficient r13 = 17.4 pm/V. Dispersion of the refraction index follows the Sellmeier formula n2 = 1+3.46/[1−(244 nm/λ)2] in the range from 400 nm to 850 nm.
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42.79.Hp Optical processors, correlators, and modulators
77.55.-g Dielectric thin films
78.20.Jq Electro-optical effects
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Molecular volume dependence of the electronic and ionic polarizabilities in TiO2 and SiO2

R. A. B. Devine and T. Busani

Appl. Phys. Lett. 86, 062902 (2005); http://dx.doi.org/10.1063/1.1861511 (3 pages) | Cited 2 times

Online Publication Date: 31 January 2005

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The molecular volume dependence of the ionic and electronic parts of the molecular polarizability in SiO2 and TiO2 polymorphs is examined. It is demonstrated that their variation should not be neglected when using models such as the “additivity rule” to predict multicomponent oxide dielectric constants.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.22.Ej Polarization and depolarization
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
77.22.Ch Permittivity (dielectric function)

Greatly reduced leakage current and conduction mechanism in aliovalent-ion-doped BiFeO3

Xiaoding Qi, Joonghoe Dho, Rumen Tomov, Mark G. Blamire, and Judith L. MacManus-Driscoll

Appl. Phys. Lett. 86, 062903 (2005); http://dx.doi.org/10.1063/1.1862336 (3 pages) | Cited 274 times

Online Publication Date: 31 January 2005

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Transport properties of aliovalent-ion-doped BiFeO3 (BFO) thin films have been studied in order to identify the cause of high leakage currents. Doping of 2 at. % Ti4+ ions increased the dc resistivity by more than three orders of magnitude. In contrast, doping of 2+ ions such as Ni2+ reduced the dc resistivity by two orders of magnitude. Current–voltage (I–V) characteristics indicated that the main conduction mechanism for pure and Ni2+ doped BFO was space charge limited, which was associated with the free-carriers trapped by the oxygen vacancies, whereas in the Ti4+ doped BFO, field-assisted ionic conduction was dominant.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
77.22.Jp Dielectric breakdown and space-charge effects
73.50.Fq High-field and nonlinear effects
66.30.H- Self-diffusion and ionic conduction in nonmetals
61.72.J- Point defects and defect clusters
77.22.Ej Polarization and depolarization
61.72.S- Impurities in crystals
81.40.Gh Other heat and thermomechanical treatments
81.40.Tv Optical and dielectric properties related to treatment conditions
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
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