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7 Feb 2005

Volume 86, Issue 6, Articles (06xxxx)

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Appl. Phys. Lett. 86, 063101 (2005); http://dx.doi.org/10.1063/1.1861133 (3 pages)

Choongho Yu, Qing Hao, Sanjoy Saha, Li Shi, Xiangyang Kong, and Z. L. Wang
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Electronic structure of Li-inserted V6O13 battery cathodes: Rigid band behavior and effects of hybridization

T. Schmitt, A. Augustsson, J. Nordgren, L.-C. Duda, J. Höwing, T. Gustafsson, U. Schwingenschlögl, and V. Eyert

Appl. Phys. Lett. 86, 064101 (2005); http://dx.doi.org/10.1063/1.1861125 (3 pages) | Cited 15 times

Online Publication Date: 1 February 2005

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Resonant soft x-ray emission (SXE) spectroscopy was used to study the electronic structure of LixV6O13 battery cathodes. We observe that the V 3d-bands of V6O13 exhibit a rather rigid behavior. Upon lithiation, electrons enter the top of the valence band and add intensity to the corresponding part of the V L-emission spectrum without significantly distorting the lower lying bands. We perform ab initio calculations which are in good agreement with the experimental results. Moreover, we find that lithiation leads to an overall decrease of the V 3d–O 2p hybridization. In contrast to x-ray diffraction, it is possible to study charge transfer effects in Li-batteries with SXE spectroscopy over the entire lithiation range.
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82.47.Aa Lithium-ion batteries
82.45.Fk Electrodes
71.15.Pd Molecular dynamics calculations (Car-Parrinello) and other numerical simulations
71.20.Ps Other inorganic compounds
82.30.Nr Association, addition, insertion, cluster formation

Dual-gate pentacene organic field-effect transistors based on a nanoassembled SiO2 nanoparticle thin film as the gate dielectric layer

Tianhong Cui and Guirong Liang

Appl. Phys. Lett. 86, 064102 (2005); http://dx.doi.org/10.1063/1.1861126 (3 pages) | Cited 15 times

Online Publication Date: 1 February 2005

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In this paper, we report the fabrication of dual-gate organic field-effect transistors (OFETs) using self-assembled SiO2 and thermal oxide as gate dielectric materials and pentacene as a semiconductor. The top dielectric layer was formed by the low-cost and low-temperature self-assembly with SiO2 nanoparticles 45 nm in diameter. The fabricated dual-gate pentacene field-effect transistor (FET) has a threshold voltage of −2.2 V, a field-effect mobility of 0.1 cm2/V s, an Ion/off ratio of 3.8×103, and a slope of 1.3 V/decade. Compared to a single gate OFET, dual-gate FET has better performance with higher drain output current at the relatively low operating voltage, larger field-effect mobility, and better channel controllability by separately adjusting two gate biases.
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85.30.Tv Field effect devices
81.16.Dn Self-assembly
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
61.46.-w Structure of nanoscale materials
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.50.Dn Low-field transport and mobility; piezoresistance

Q-factor optimization of a tuning-fork/fiber sensor for shear-force detection

Jérôme Morville, Jinquan Liu, Andrea Callegari, and Majed Chergui

Appl. Phys. Lett. 86, 064103 (2005); http://dx.doi.org/10.1063/1.1861983 (3 pages) | Cited 7 times

Online Publication Date: 1 February 2005

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We present the results of an experimental and theoretical study on the optimum design of shear-force sensors, used in scanning probe microscopes. We have optimized a configuration consisting of a tuning-fork/fiber-tip assembly, achieving quality factors (Q) exceeding 8000, and have presented a theoretical analysis of the design wherein the force holding the fiber and fork in contact is provided solely by elastic mechanical deformation, which allows full control of the performance of the system. On this basis, we constructed a high-quality-factor configuration with the fiber glued onto the tuning fork.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
07.10.Pz Instruments for strain, force, and torque
07.79.-v Scanning probe microscopes and components
07.60.Vg Fiber-optic instruments
42.81.Pa Sensors, gyros
07.79.Fc Near-field scanning optical microscopes

Integrated microcircuit on a diamond anvil for high-pressure electrical resistivity measurement

Yonghao Han, Chunxiao Gao, Yanzhang Ma, Hongwu Liu, Yuewu Pan, Jifeng Luo, Ming Li, Chunyuan He, Xiaowei Huang, Guangtian Zou, Yanchun Li, Xiaodong Li, and Jing Liu

Appl. Phys. Lett. 86, 064104 (2005); http://dx.doi.org/10.1063/1.1863444 (3 pages) | Cited 32 times

Online Publication Date: 2 February 2005

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A multilayer microcircuit on a diamond surface has been developed for high-pressure resistivity measurement in a diamond anvil cell (DAC). Using a film deposition technique, a layer of Mo film was deposited on a diamond anvil as a conductor, topped with a layer of alumina film for insulation. A microelectric circuit was fabricated with a photolithographic shaping method after film encapsulation. With precise control and measurements of all the dimensions of the sample for resistance measurement, including the width of the metallic film and the diameter and thickness of the gasket hole, resistivity of a sample can be accurately determined. This microcircuit can be flexibly fabricated and easily cleaned. It also provides a promising prospect to measure resistivity under in situ high pressure and high temperature. We measured the resistivity of ZnS using this method, and proved the pressure induced phase transition at 13.9–17.9 GPa to be a semiconductor to semiconductor transformation.
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07.35.+k High-pressure apparatus; shock tubes; diamond anvil cells
84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)
85.40.Hp Lithography, masks and pattern transfer
73.61.Ga II-VI semiconductors
62.50.-p High-pressure effects in solids and liquids

Polymer microcantilevers fabricated via multiphoton absorption polymerization

Z. Bayindir, Y. Sun, M. J. Naughton, C. N. LaFratta, T. Baldacchini, J. T. Fourkas, J. Stewart, B. E. A. Saleh, and M. C. Teich

Appl. Phys. Lett. 86, 064105 (2005); http://dx.doi.org/10.1063/1.1863414 (3 pages) | Cited 18 times

Online Publication Date: 3 February 2005

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We have used multiphoton absorption polymerization to fabricate a series of microscale polymer cantilevers. Atomic force microscopy has been used to characterize the mechanical properties of microcantilevers with spring constants that were found to span more than four decades. From these data, we extracted a Young’s modulus of E = 0.44 GPa for these microscale cantilevers. The wide stiffness range and relatively low elastic modulus of the microstructures make them attractive candidates for a range of microcantilever applications, including measurements on soft matter.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity
61.41.+e Polymers, elastomers, and plastics
68.37.Ps Atomic force microscopy (AFM)
82.35.-x Polymers: properties; reactions; polymerization

High-bandwidth terahertz radiation from ponderomotively accelerated carriers using Bessel–Gauss femtosecond pulses

K. J. Chau, A. L. Dechant, and A. Y. Elezzabi

Appl. Phys. Lett. 86, 064106 (2005); http://dx.doi.org/10.1063/1.1861135 (3 pages)

Online Publication Date: 4 February 2005

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Terahertz generation from high intensity excitation of a semiconductor plasma by a radially polarized Bessel–Gauss femtosecond pulse is modeled. The results are compared with Gaussian pulses of equivalent fluence. Due to carrier confinement, a radially polarized Bessel–Gauss pulse exerts a significantly stronger ponderomotive force on photocarriers than a Gaussian pulse, resulting in an order of magnitude increase in the THz emission power.
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72.30.+q High-frequency effects; plasma effects
78.70.Gq Microwave and radio-frequency interactions
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