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14 Feb 2005

Volume 86, Issue 7, Articles (07xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 86, 071101 (2005); http://dx.doi.org/10.1063/1.1862756 (3 pages)

Robert Horvath, Henrik C. Pedersen, Nina Skivesen, David Selmeczi, and Niels B. Larsen
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Ferroelectric properties of wet-chemical patterned PbZr0.52Ti0.48O3 films

S. Ezhilvalavan and Victor D. Samper

Appl. Phys. Lett. 86, 072901 (2005); http://dx.doi.org/10.1063/1.1864234 (3 pages) | Cited 17 times

Online Publication Date: 7 February 2005

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PbZr0.52Ti0.48O3 (PZT) films of thickness ∼ 1μm prepared by a sol-gel process were wet-chemically patterned using an economical and effective etch process. The etch recipe provided excellent etch control, minimized undercut, preserved the photoresist mask, and effectively removed the residues on the etched surfaces. A high etch rate (200 nm/min), high selectivity with respect to photoresist, and limited undercutting (1.5:1, lateral: thickness) were obtained. The patterned PZT films exhibited good ferroelectric properties in terms of larger saturation polarization, Pmax of ∼ 53 μC/cm2 at an applied field of 1 MV/cm, higher remnant polarization Pr of ∼ 30 μC/cm2 for a coercive field of ∼ 150 kV/cm, fatigue-free characteristics up to ≥ 1010 switching cycles, and a low leakage current density of 10−6 A/cm2 at 200×105 kV/cm.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
81.65.Cf Surface cleaning, etching, patterning
77.80.Fm Switching phenomena
77.80.Dj Domain structure; hysteresis
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)

Dielectric relaxation and tunability of Bi2O3–ZnO–CaO–Ta2O5 ceramics

Bo Shen, Jiwei Zhai, and Xi Yao

Appl. Phys. Lett. 86, 072902 (2005); http://dx.doi.org/10.1063/1.1857082 (3 pages) | Cited 4 times

Online Publication Date: 7 February 2005

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(Bi2−xCax)(Zn1/3Ta2/3)2O7 (0 ⩽ x ⩽ 1) ceramic were prepared by using a solid-state reaction technique. (Bi1.2Ca0.8)(Zn1/3Ta2/3)2O7 was found to have cubic pyrochlore structure, while (Bi1.9Ca0.1)(Zn1/3Ta2/3)2O7 was shown to have a monoclinic zirconolite structures. cubic pyrochlore (Bi1.2Ca0.8)(Zn1/3Ta2/3)2O7, not monoclinic zirconolite (Bi1.9Ca0.1)(Zn1/3Ta2/3)2O7, was found to show relaxation behavior at room temperature. Dielectric constant and dielectric loss were measured as functions of electric field and temperature. The results show a maximum tunability of 12% under a bias 60 KV∕cm in cubic-pyrochlore-structure (Bi1.2Ca0.8)(Zn1/3Ta2/3)2O7 ceramics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Gm Dielectric loss and relaxation
77.22.Ch Permittivity (dielectric function)

Reasons for obtaining an optical dielectric constant from the Poole–Frenkel conduction behavior of atomic-layer-deposited HfO2 films

Doo Seok Jeong, Hong Bae Park, and Cheol Seong Hwang

Appl. Phys. Lett. 86, 072903 (2005); http://dx.doi.org/10.1063/1.1865326 (3 pages) | Cited 25 times

Online Publication Date: 8 February 2005

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The leakage current characteristics of a 16-nm-thick HfO2 film, grown by atomic-layer-deposition using HfCl4 as Hf precursor and O3 as oxidant, were investigated. The electron injection from the Pt top electrode to the HfO2 films was measured at various temperatures. The measured leakage current versus applied bias voltage curves showed the Poole–Frenkel conduction behavior in the high electric field region. However, the estimated dielectric constant from the Poole–Frenkel fitting corresponds to the dielectric constant of the optical frequency region. The quantum mechanical calculation of the electron transition from the metal electrode to the traps in the HfO2 film showed that the transition time was very short (10−14–10−16 s) under the applied field. Therefore, the dielectric response of the HfO2 film to the electron conduction by Poole–Frenkel mechanism must be of the optical frequency under steady state current conduction.
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77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.32.Tt Capacitors
73.50.Fq High-field and nonlinear effects
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
77.22.Ch Permittivity (dielectric function)
85.30.Tv Field effect devices
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Correlation between domain evolution and asymmetric switching in epitaxial Pb(Zr0.52Ti0.48)O3 thin films

Wenbin Wu, K. H. Wong, G. K. H. Pang, and C. L. Choy

Appl. Phys. Lett. 86, 072904 (2005); http://dx.doi.org/10.1063/1.1866506 (3 pages) | Cited 9 times

Online Publication Date: 11 February 2005

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The process-induced domain evolution and asymmetric switching in epitaxial Pb(Zr0.52Ti0.48)O3 (PZT) thin films have been studied by reciprocal space mapping, transmission electron microscopy, high-temperature x-ray diffraction, and the polarization-electric field hysteresis loop measurements. After annealing at reduced oxygen pressures, it was evidenced that an oxygen loss at the PZT bottom interface can occur at temperatures well below the Curie temperature TC, and more importantly, the oxygen loss can induce a large positive voltage offset and drive simultaneously the polydomain formation in the PZT films. Our results indicate that the structure evolution is correlated with the coercive voltage shift, and an oxygen-loss-related internal stress at the interface would be responsible for the large internal electric field in epitaxial PZT films.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
84.32.Tt Capacitors
77.55.-g Dielectric thin films
77.80.Fm Switching phenomena
77.80.B- Phase transitions and Curie point
68.55.-a Thin film structure and morphology
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
68.37.Lp Transmission electron microscopy (TEM)
81.40.Gh Other heat and thermomechanical treatments

Flexoelectric effect in ceramic lead zirconate titanate

Wenhui Ma and L. Eric Cross

Appl. Phys. Lett. 86, 072905 (2005); http://dx.doi.org/10.1063/1.1868078 (3 pages) | Cited 21 times

Online Publication Date: 11 February 2005

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Mechanical strain gradient generated electric polarization or flexoelectric effect was investigated in unpoled lead zirconate titanate (PZT) ceramics in the ferroelectric state by using a cantilevered beam based approach. Flexoelectric coefficient μ12 at room temperature was measured to be 1.4 μC/m in the PZT ceramic at small level of strain gradient. Temperature-dependent experimental investigations clearly showed that high dielectric permittivity in the ferroelectrics enhanced flexoelectric polarization: essentially a linear relation was found to exist between μ12 and dielectric susceptibility χ at lower permittivity level (2100–2800), while μ12 versus χ curve started to deviate from the straight line at the χ ∼ 2800 and nonlinear enhancement of μ12 with χ was observed, with μ12 value reaching 9.5 at χ ∼ 11 000. The nonlinearity in the flexoelectric effect was associated with domain-related processes. It is suggested that flexoelectric effect can have a significant impact on epitaxial ferroelectric thin films and mesoscopic structures.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
77.22.Ej Polarization and depolarization
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