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14 Feb 2005

Volume 86, Issue 7, Articles (07xxxx)

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Appl. Phys. Lett. 86, 071101 (2005); http://dx.doi.org/10.1063/1.1862756 (3 pages)

Robert Horvath, Henrik C. Pedersen, Nina Skivesen, David Selmeczi, and Niels B. Larsen
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Ballistic emission spectroscopy and imaging of a buried metal∕organic interface

Cedric Troadec, Linda Kunardi, and N. Chandrasekhar

Appl. Phys. Lett. 86, 072101 (2005); http://dx.doi.org/10.1063/1.1862789 (3 pages) | Cited 12 times

Online Publication Date: 8 February 2005

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The silver∕polyparaphenylene interface is investigated using ballistic electron emission microscopy (BEEM). Multiple injection barriers and spatial nonuniformity of carrier injection over nanometer length scales are observed. No unique injection barrier is found. Physical reasons for these features are discussed. BEEM current images and the surface topography of the silver film are uncorrelated.
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73.30.+y Surface double layers, Schottky barriers, and work functions
68.35.Ct Interface structure and roughness
68.37.Vj Field emission and field-ion microscopy
73.20.At Surface states, band structure, electron density of states
73.40.Ns Metal-nonmetal contacts
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology

Magnetoresistance in Ag2+δSe with high silver excess

M. von Kreutzbruck, B. Mogwitz, F. Gruhl, L. Kienle, C. Korte, and J. Janek

Appl. Phys. Lett. 86, 072102 (2005); http://dx.doi.org/10.1063/1.1866642 (3 pages) | Cited 16 times

Online Publication Date: 9 February 2005

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In the present study, we investigated the galvanomagnetic transport properties of polycrystalline AgxSe thin films with silver excess in the range from x = 1.5 to 18. The results prove that the silver excess controls the transition from linear magnetoresistance (MR) behavior to the quadratic ordinary MR and the temperature for the metal–semiconductor transition. Analyzing the MR effect by Kohler’s rule and comparing the results with the field-free resistivity we observe for 2<x<2.3 a steep rise of the product of mean free path and electron concentration (λ·n2/3). We interpret this result as a consequence of the percolation of nanoscale silver networks within the semiconducting matrix, i.e., as a consequence of the two-phase character of the system.
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75.50.Pp Magnetic semiconductors
75.20.Ck Nonmetals
75.70.Ak Magnetic properties of monolayers and thin films
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.61.Le Other inorganic semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
72.60.+g Mixed conductivity and conductivity transitions

Dielectric breakdown and Poole–Frenkel field saturation in silicon oxynitride thin films

S. Habermehl and R. T. Apodaca

Appl. Phys. Lett. 86, 072103 (2005); http://dx.doi.org/10.1063/1.1865338 (3 pages) | Cited 9 times

Online Publication Date: 9 February 2005

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Dielectric breakdown is studied in silicon oxynitride thin films varying in composition from SiN1.33 to SiO0.60N0.93. The films are observed to exhibit Poole–Frenkel emission as the dominant charge transport mechanism, with a compositionally dependent ionization potential ranging from 1.22 to 1.51 eV. The barrier lowering energy at the point of dielectric breakdown is independently determined to be likewise compositionally dependent, with the energies correlated to within ∼ 2 kT of the ionization potential. Field saturation-induced trap ionization is discussed as a means to negate carrier scattering from bulk traps as an impediment to impact ionization and dielectric breakdown.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
77.22.Jp Dielectric breakdown and space-charge effects
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.32.Tt Capacitors
73.50.Fq High-field and nonlinear effects

Structural influence on atomic hopping and electronic states of Pd-based bulk metallic glasses

X.-P. Tang, Jörg F. Löffler, R. B. Schwarz, William L. Johnson, and Yue Wu

Appl. Phys. Lett. 86, 072104 (2005); http://dx.doi.org/10.1063/1.1866217 (3 pages) | Cited 2 times

Online Publication Date: 9 February 2005

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Atomic motion and electronic structures of Pd–Ni–Cu–P bulk metallic glasses were investigated using math nuclear magnetic resonance. The hopping rate of P atoms was determined by the stimulated echo technique. Significant hopping was observed in all alloys well below the glass transition temperature. Increasing the Cu content to above 25 at. % increases P hopping significantly, consistent with the previous finding that the openness of the structure increases with Cu content. In contrast, P hopping is not influenced by changes of local electronic states at P sites, induced by the substitution of Ni by Cu.
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76.60.Lz Spin echoes
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
61.43.Fs Glasses

Modification of GaAs Schottky diodes by thin organic interlayers

A. R. Vearey-Roberts and D. A. Evans

Appl. Phys. Lett. 86, 072105 (2005); http://dx.doi.org/10.1063/1.1864255 (3 pages) | Cited 50 times

Online Publication Date: 10 February 2005

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Control of the interfacial potential barrier for metal/n‐GaAs diodes has been achieved using thin interlayers of the organic semiconductor, tin phthalocyanine (SnPc). The current–voltage (I–V) characteristics for organic-modified Ag/S:GaAs diodes indicate a change from rectifying to almost ohmic behavior as the thickness of the SnPc interlayer is increased. Modeling reveals thermionic emission to be the dominant transport mechanisms for all diodes (ideality factors, n<1.3). Unlike other organic interlayers in similar device structures, SnPc reduces the effective barrier height by influencing the space charge region of the GaAs. The change in barrier height deduced from the I–V characteristics [(0.26±0.02) V] is similar to the band-bending measured using core-level photoelectron spectroscopy for SnPc growth on the S-passivated n‐GaAs(001) surface [(0.22±0.04) eV] and is much larger than previously reported for other similar systems.
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85.30.Hi Surface barrier, boundary, and point contact devices
73.40.Ns Metal-nonmetal contacts
79.40.+z Thermionic emission
73.20.At Surface states, band structure, electron density of states
68.55.-a Thin film structure and morphology
79.60.Jv Interfaces; heterostructures; nanostructures

Strained-silicon formation on relaxed silicon–germanium/ silicon-on-insulator substrate using laser annealing

Yasuyoshi Mishima, Hirosato Ochimizu, and Atsushi Mimura

Appl. Phys. Lett. 86, 072106 (2005); http://dx.doi.org/10.1063/1.1865344 (2 pages) | Cited 1 time

Online Publication Date: 10 February 2005

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We propose a low-temperature process to fabricate strained silicon on silicon–germanium (SiGe)/silicon-on-insulator (SOI) substrates using excimer laser annealing technology. An excimer laser was used to relax the SiGe layer on the SOI substrate. We confirmed that laser power density could control the degree of relaxation of the SiGe layer on SOI. We fabricated strained-silicon films by growing them on the relaxed SiGe layer on SOI. The field-effect electron mobility of the strained Si on the relaxed SiGe/SOI was increased by 180%, compared to that of the unstrained Si on the strained SiGe/SOI, fabricated by laser annealing at 280 mJ/cm2.
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81.05.Cy Elemental semiconductors
68.55.A- Nucleation and growth
61.82.Fk Semiconductors
61.72.Cc Kinetics of defect formation and annealing
85.30.Tv Field effect devices
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
78.66.Db Elemental semiconductors and insulators
78.30.Am Elemental semiconductors and insulators
73.50.Dn Low-field transport and mobility; piezoresistance
81.40.Jj Elasticity and anelasticity, stress-strain relations
68.60.Bs Mechanical and acoustical properties

Electrostatic potential perturbation at the polycrystalline Si/HfO2 interface

V. V. Afanas’ev, A. Stesmans, L. Pantisano, and P. J. Chen

Appl. Phys. Lett. 86, 072107 (2005); http://dx.doi.org/10.1063/1.1850597 (3 pages) | Cited 4 times

Online Publication Date: 10 February 2005

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Comparison between potential barriers at the interfaces of polycrystalline Si with SiO2, SiO2/HfO2, HfO2, and HfO2/SiNx insulators indicates substantial perturbation of the image-force barrier shape at the Hf-containing interfaces. The internal photoemission of electrons suggests that Hf introduces charged centers with signs depending on the silicon doping type. In addition, at the interfaces of polycrystalline Si with HfO2 the barrier height is reduced by 0.2 eV as compared to the (100)Si case by an interface dipole layer.
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84.32.Tt Capacitors
85.30.Tv Field effect devices
77.55.-g Dielectric thin films
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
77.22.Jp Dielectric breakdown and space-charge effects
73.30.+y Surface double layers, Schottky barriers, and work functions
79.60.Jv Interfaces; heterostructures; nanostructures
79.60.Bm Clean metal, semiconductor, and insulator surfaces
79.60.Dp Adsorbed layers and thin films

Band alignment at the interface of (100)Si with HfxTa1−xOy high-κ dielectric layers

V. V. Afanas’ev, A. Stesmans, C. Zhao, M. Caymax, Z. M. Rittersma, and J. W. Maes

Appl. Phys. Lett. 86, 072108 (2005); http://dx.doi.org/10.1063/1.1866640 (3 pages) | Cited 10 times

Online Publication Date: 11 February 2005

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The alignment of the conduction and valence bands in metal∕mixed Hf–Ta oxide∕silicon structures was determined as a function of oxide composition using intrinsic photoconductivity and internal photoemission measurements. With increasing Ta content in the Hf–Ta oxide from 0% to 100%, the band gap gradually decreases from 5.6 to 4.2–4.4 eV. This is predominantly associated with the downshift of the lowest conduction band derived from the 5d* unoccupied orbitals of the metal cations. This indicates a significant mixing of the states belonging to the Ta and Hf subnetworks, and suggests the possibility of oxide band gap control in the mixed oxides of metals from the same period of elements.
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85.30.Tv Field effect devices
77.55.-g Dielectric thin films
73.20.At Surface states, band structure, electron density of states
73.50.Pz Photoconduction and photovoltaic effects
79.60.Jv Interfaces; heterostructures; nanostructures
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Observed trapping of minority-carrier electrons in p-type GaAsN during deep-level transient spectroscopy measurement

S. W. Johnston, S. R. Kurtz, D. J. Friedman, A. J. Ptak, R. K. Ahrenkiel, and R. S. Crandall

Appl. Phys. Lett. 86, 072109 (2005); http://dx.doi.org/10.1063/1.1865328 (3 pages) | Cited 10 times

Online Publication Date: 11 February 2005

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Deep-level transient spectroscopy measurements on a reverse-biased p-type GaAsN Schottky diode grown by metalorganic chemical vapor deposition show a minority-carrier trap signal corresponding to an electron trap having an activation energy of about 0.2 eV. The proportion of trapped electrons agrees with that of modeled defect states near the Schottky-barrier metal interface whose occupation is affected by changing reverse-bias conditions. Estimates of thermionic emission provide adequate filling of the traps with electrons from the metal. The inclusion of a GaAs layer between the metal and GaAsN layer reduces the electron-trapping signal.
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85.30.Kk Junction diodes
85.30.Hi Surface barrier, boundary, and point contact devices
71.55.Eq III-V semiconductors
73.61.Ey III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
79.40.+z Thermionic emission
61.72.Qq Microscopic defects (voids, inclusions, etc.)
73.40.Ns Metal-nonmetal contacts
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
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