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14 Feb 2005

Volume 86, Issue 7, Articles (07xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 86, 071101 (2005); http://dx.doi.org/10.1063/1.1862756 (3 pages)

Robert Horvath, Henrik C. Pedersen, Nina Skivesen, David Selmeczi, and Niels B. Larsen
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Fabrication of nanoscale charge density wave systems

Katsuhiko Inagaki, Takeshi Toshima, Satoshi Tanda, Kazuhiko Yamaya, and Shinya Uji

Appl. Phys. Lett. 86, 073101 (2005); http://dx.doi.org/10.1063/1.1862782 (3 pages) | Cited 7 times

Online Publication Date: 7 February 2005

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Nanoscale charge density wave systems of quasi-one-dimensional o‐TaS3 crystals were fabricated. Gold electrodes 400 nm wide were made by standard lift-off technique on o‐TaS3 nanocrystals prepared by deposition on silicon substrates. Interface resistance was higher than 100 GΩ just after evaporation, and were significantly reduced by electron-beam irradiation. The electrodes were tested down to 80 mK, and were found quite durable for cryogenic measurement. The temperature dependence of the resistance of the nanocrystal was represented as the variable-range-hopping-type conduction with one dimension over the wide range of temperature, from 4.2 to 100 K. This behavior was different from that of conventional bulk samples.
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81.07.Bc Nanocrystalline materials
81.16.-c Methods of micro- and nanofabrication and processing
72.20.Ee Mobility edges; hopping transport
73.40.Ns Metal-nonmetal contacts
73.40.Cg Contact resistance, contact potential
61.46.-w Structure of nanoscale materials
61.80.Fe Electron and positron radiation effects
72.15.Nj Collective modes (e.g., in one-dimensional conductors)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Blue semiconductor nanocrystal laser

Yinthai Chan, Jonathan S. Steckel, Preston T. Snee, J.-Michel Caruge, Justin M. Hodgkiss, Daniel G. Nocera, and Moungi G. Bawendi

Appl. Phys. Lett. 86, 073102 (2005); http://dx.doi.org/10.1063/1.1863445 (3 pages) | Cited 56 times

Online Publication Date: 7 February 2005

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We demonstrate tunable room-temperature amplified spontaneous emission and lasing from blue-emitting core-shell CdS/ZnS nanocrystals (NCs) stabilized in a sol-gel derived silica matrix. Variable stripe length measurements show that these NC-silica composites have a modal gain of ∼ 100 cm−1 at room temperature. Coating microspheres with a NC-silica composite film via a facile process resulted in uniform resonators that exhibit room-temperature lasing over long periods of continuous excitation. This work opens up a spectral window for emission tunable, microscale NC-based lasers.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.55.Et II-VI semiconductors
78.45.+h Stimulated emission

Highly polarized absorption and photoluminescence of stretch-aligned single-wall carbon nanotubes dispersed in gelatin films

Y. Kim, N. Minami, and S. Kazaoui

Appl. Phys. Lett. 86, 073103 (2005); http://dx.doi.org/10.1063/1.1863448 (3 pages) | Cited 43 times

Online Publication Date: 7 February 2005

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Substantial alignment of isolated individual single-wall carbon nanotubes (SWNTs) has been achieved by mechanically stretching gelatin films filled with homogeneously dispersed SWNTs. Highly polarized absorption and photoluminescence are observed that are attributed to interband optical transitions in SWNTs. Sharp and well-resolved spectral peaks comparable to those for an SWNT micelle suspension confirm good isolation of the tubes in dried films. Gelatin’s remarkable features such as miscibility with SWNT micelles, protective colloid, film-forming ability, and stretchability play important roles in the success. The realization of highly aligned and luminescent SWNT thin films should contribute to the development of SWNTs as novel optoelectronic materials.
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82.70.Gg Gels and sols
78.67.Ch Nanotubes
78.66.Qn Polymers; organic compounds
81.07.De Nanotubes
68.55.A- Nucleation and growth
78.20.Fm Birefringence
78.55.Kz Solid organic materials
68.55.-a Thin film structure and morphology
61.46.-w Structure of nanoscale materials
81.16.-c Methods of micro- and nanofabrication and processing
64.75.-g Phase equilibria

Fabrication and electric-field-dependent transport measurements of mesoscopic graphite devices

Yuanbo Zhang, Joshua P. Small, William V. Pontius, and Philip Kim

Appl. Phys. Lett. 86, 073104 (2005); http://dx.doi.org/10.1063/1.1862334 (3 pages) | Cited 116 times

Online Publication Date: 7 February 2005

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We have developed a unique micromechanical method to extract extremely thin graphite samples. Graphite crystallites with thicknesses ranging from 10 to 100 nm and lateral size ∼ 2 μm are extracted from bulk. Mesoscopic graphite devices are fabricated from these samples for electric field-dependent conductance measurements. Strong conductance modulation as a function of gate voltage is observed in the thinner crystallite devices. The temperature-dependent resistivity measurements show more boundary scattering contribution in the thinner graphite samples.
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73.23.-b Electronic transport in mesoscopic systems
73.63.Bd Nanocrystalline materials
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
07.10.Cm Micromechanical devices and systems

n-type carbon nanotube field-effect transistors fabricated by using Ca contact electrodes

Yosuke Nosho, Yutaka Ohno, Shigeru Kishimoto, and Takashi Mizutani

Appl. Phys. Lett. 86, 073105 (2005); http://dx.doi.org/10.1063/1.1865343 (3 pages) | Cited 50 times

Online Publication Date: 7 February 2005

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We have fabricated n-type carbon nanotube field effect transistors by choosing the contact metal. Single-walled carbon nanotubes were grown directly on a SiO2/Si substrate by chemical vapor deposition using patterned metal catalysts. Following the nanotube growth, Ca contacts with a small work function were formed by evaporating and lifting off the metal. The devices showed n-type transfer characteristics without any doping into the nanotube channel. In contrast, the devices with Pd contacts showed p-type conduction. These results can be explained by taking into account the work functions of the contact metals.
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85.30.Tv Field effect devices
85.35.Kt Nanotube devices
81.16.Be Chemical synthesis methods
73.30.+y Surface double layers, Schottky barriers, and work functions
73.20.At Surface states, band structure, electron density of states
73.22.-f Electronic structure of nanoscale materials and related systems
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.40.Cg Contact resistance, contact potential

High-density self-assembled GaN nanoislands on SiC (0001) by molecular-beam epitaxy

K. Jeganathan, M. Shimizu, and H. Okumura

Appl. Phys. Lett. 86, 073106 (2005); http://dx.doi.org/10.1063/1.1865323 (3 pages) | Cited 2 times

Online Publication Date: 7 February 2005

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We report the fabrication of self-assembled coherent GaN nanoislands on Ga-adsorbed √3×√3 R30° 6H–SiC(0001) surfaces via Stranski–Krastanov (SK) growth mode by molecular-beam epitaxy at 760 °C. The initial GaN deposition reveals a stable two-dimensional growth (2D) mode under Ga-rich growth conditions (Ga/N⪢1), as evidenced by the variation of in-plane misfit strain (Δa/a0). We show that above ∼ 2.2 monolayer (ML) surface coverage, the 2D layer spontaneously transformed into SK islands by the accommodation of elastic strain in the epitaxial lattice misfit under a vacuum. The SK islands density is found to be ∼ 4×1011 cm−2 and the mean height and diameter is 2±0.5 nm and 20±5 nm for 3.2 ML surface coverage, respectively.
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81.05.Ea III-V semiconductors
81.07.Bc Nanocrystalline materials
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.46.-w Structure of nanoscale materials
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.25.-g Mechanical properties of nanoscale systems
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Bistability in a magnetic and nonmagnetic double-quantum-well structure mediated by the magnetic phase transition

Y. G. Semenov, H. Enaya, and K. W. Kim

Appl. Phys. Lett. 86, 073107 (2005); http://dx.doi.org/10.1063/1.1864237 (3 pages) | Cited 4 times

Online Publication Date: 8 February 2005

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The hole distribution in a double-quantum-well (QW) structure consisting of a magnetic and a nonmagnetic semiconductor QW is investigated as a function of temperature, the energy shift between the QWs, and other relevant parameters. When the itinerant holes mediate the ferromagnetic ordering, it is shown that a bistable state can be formed through hole redistribution, resulting in a significant change in the properties of the constituting magnetic QW (i.e., the paramagnetic-ferromagnetic transition). The model calculation also indicates a large window in the system parameter space where bistability is possible. Hence, this structure could form the basis of a stable memory element that may be scaled down to a few-hole regime.
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75.50.Pp Magnetic semiconductors
75.50.Dd Nonmetallic ferromagnetic materials
75.40.Mg Numerical simulation studies
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.10.Lp Band and itinerant models
75.20.Ck Nonmetals

High-quality quantum point contacts in GaN/AlGaN heterostructures

H. T. Chou, S. Lüscher, D. Goldhaber-Gordon, M. J. Manfra, A. M. Sergent, K. W. West, and R. J. Molnar

Appl. Phys. Lett. 86, 073108 (2005); http://dx.doi.org/10.1063/1.1862339 (3 pages) | Cited 17 times

Online Publication Date: 8 February 2005

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We study the transport properties of quantum point contacts in a GaN/AlGaN heterostructure. The conductance of our devices shows well-quantized plateaus, which spin-split in high perpendicular magnetic field. The g factor is 2.55, as derived from the point contact subband splitting versus perpendicular magnetic field. In addition to the well-resolved plateaus, we also observe evidence of “0.7 structure” which has been mainly investigated in the GaAs system.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.23.-b Electronic transport in mesoscopic systems
73.63.Rt Nanoscale contacts

Thin bismuth film as a template for pentacene growth

J. T. Sadowski, T. Nagao, S. Yaginuma, Y. Fujikawa, A. Al-Mahboob, K. Nakajima, T. Sakurai, G. E. Thayer, and R. M. Tromp

Appl. Phys. Lett. 86, 073109 (2005); http://dx.doi.org/10.1063/1.1865350 (3 pages) | Cited 40 times

Online Publication Date: 8 February 2005

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Thin Bi(001) films grown by ultrahigh vacuum deposition on Si(111)‐7×7 surfaces at room temperature, were annealed at ∼ 400 K in order to improve their morphology by reducing the step density on the surface. Annealed, well-ordered Bi(001) films have been subsequently used as substrates for growth of pentacene (Pn). It has been determined using low-energy electron microscope that Pn nucleates on Bi(001) into a highly ordered, crystalline layer, with Pn molecules “standing up” on the Bi surface, and the (001) plane on the growth front. Moreover, the Pn layer is aligned with the Bi(001) surface having a “point-on-line” commensurate relationship with the substrate. The Pn/Bi(001) film crystallizes in a bulk-like structure directly from the first Pn layer. Formation of the thin film phase reported for the Pn growth on SiO2 and other inert substrates was not observed in our experiments.
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81.05.Hd Other semiconductors
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
61.72.Cc Kinetics of defect formation and annealing
68.35.B- Structure of clean surfaces (and surface reconstruction)
64.70.K- Solid-solid transitions

A Si nanopillar grown on a Si tip by atomic force microscopy in ultrahigh vacuum for a high-quality scanning probe

Toyoko Arai and Masahiko Tomitori

Appl. Phys. Lett. 86, 073110 (2005); http://dx.doi.org/10.1063/1.1866213 (3 pages) | Cited 13 times

Online Publication Date: 8 February 2005

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We grow a Si nanopillar on a commercial Si tip on an atomic force microscopy (AFM) cantilever using AFM in ultrahigh vacuum for a high-quality scanning force probe, and observe noncontact-AFM (nc-AFM) images of Si(111)7×7 and Ge deposited Si(111) with the nanopillar. We observe it ex situ by transmission electron microscopy to confirm its growth and crystallinity. The nc-AFM image clearly showed the high performance of the nanopillar as a probe with respect to the spatial resolution, image stability, and reproducibility. This nanopillar growth technique can elongate the lifetime of the cantilever and be applied to other materials.
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81.07.Bc Nanocrystalline materials
81.16.-c Methods of micro- and nanofabrication and processing
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
61.46.-w Structure of nanoscale materials
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.37.Lp Transmission electron microscopy (TEM)
68.37.Ps Atomic force microscopy (AFM)

Infrared spectroscopy of ZnO nanoparticles containing CO2 impurities

W. M. Hlaing Oo, M. D. McCluskey, A. D. Lalonde, and M. G. Norton

Appl. Phys. Lett. 86, 073111 (2005); http://dx.doi.org/10.1063/1.1866511 (3 pages) | Cited 12 times

Online Publication Date: 9 February 2005

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Impurities play a major role in determining the optical and electrical properties of semiconductor nanoparticles. In this work, the presence and source of CO2 impurities in ZnO nanoparticles were studied by IR absorption spectroscopy. Isotopic substitution was used to verify the vibrational frequency assignment. Isochronal annealing experiments were performed to study the formation and stability of the molecular impurities. Our results indicate that the molecules are much more stable than CO2 adsorbed on bulk ZnO surfaces. By comparing our observations with similar results from IR spectroscopy of CO2 trapped in carbon nanotubes [ C. Matranga, L. Chen, M. Smith, E. Bittner, J. K. Johnson, and B. Bockrath, J. Phys. Chem. B 107, 12930 (2003) ], we conclude that the molecules are trapped in the ZnO nanoparticles.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.30.Fs III-V and II-VI semiconductors
61.72.Cc Kinetics of defect formation and annealing
82.20.Tr Kinetic isotope effects including muonium
61.46.-w Structure of nanoscale materials

Copper nanopattern on SiO2 from sputter etching a Cu/SiO2 interface

M. Stepanova, S. K. Dew, and I. P. Soshnikov

Appl. Phys. Lett. 86, 073112 (2005); http://dx.doi.org/10.1063/1.1864247 (3 pages) | Cited 8 times

Online Publication Date: 9 February 2005

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We have observed a Cu nanostructure self-assembled on a SiO2 substrate during ion beam etching the Cu/SiO2 interface. We have deposited a thin Cu layer on a glass substrate and etched the deposited layer by a neutralized argon ion beam. At the stage when almost all metal is removed by etching, we have observed an ∼ 20‐nm-sized Cu pattern on the substrate. By atomistic Monte Carlo simulations we have demonstrated that during sputter etching, a morphology self-organizes on the surface of the Cu layer whose size and shape matches the observed Cu nanostructure. We conclude that the observed Cu nanopattern on the substrate results from the surface morphology developed by sputter instability during etching of the deposited layer.
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81.05.Bx Metals, semimetals, and alloys
81.16.Rf Micro- and nanoscale pattern formation
81.16.Dn Self-assembly
81.65.Cf Surface cleaning, etching, patterning
68.55.A- Nucleation and growth
81.15.Cd Deposition by sputtering
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.43.Fs Glasses
61.46.-w Structure of nanoscale materials

Fabrication of submicron size electrode via nonetching method for metal ion detection

Younghun Kim, Inhee Choi, Sung Koo Kang, Jeongjin Lee, and Jongheop Yi

Appl. Phys. Lett. 86, 073113 (2005); http://dx.doi.org/10.1063/1.1866633 (3 pages) | Cited 7 times

Online Publication Date: 10 February 2005

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A metal ion detector with a submicron size electrode was fabricated by atomic force microscopy lithography using a pre-programmed voltage and a nonetching method. The square frame of the mesa pattern was functionalized by (aminopropyl)triethoxysilane for the metal ion detection, and the remaining portion was used as an electrode by the self-assembly of (3-mercaptopropyl)trimethoxysialne for Au metal deposition. In this module, no metal lining or lead line was required, because the conductive tip (mobile electrode) was in direct contact with the gold-deposited mesa portion (fixed electrode). The conductance changed with the quantity of adsorbed copper ions, due to electron tunneling between the mobile and surface electrodes.
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81.16.Nd Micro- and nanolithography
81.16.Dn Self-assembly
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.43.Mn Adsorption kinetics
68.37.Ps Atomic force microscopy (AFM)

Self-assembly of Al2O3 nanodots on SiO2 using two-step controlled annealing technique for long retention nonvolatile memories

Jing Hao Chen, Won Jong Yoo, Daniel S. H. Chan, and Lei-Jun Tang

Appl. Phys. Lett. 86, 073114 (2005); http://dx.doi.org/10.1063/1.1868077 (3 pages) | Cited 23 times

Online Publication Date: 10 February 2005

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A self-assembly of high-density Al2O3 nanodots (NDs) on SiO2 has been demonstrated by employing a two-step controlled annealing method. Results show that the conglomeration of Al is impeded by oxygen and the size and density of Al2O3 NDs can be controlled by the initial Al film thickness and annealing temperature. Memory devices with Al2O3 NDs fabricated using this technique show improved retention properties compared to those with Al2O3 continuous films. A comparison of temperature dependency shows that the good retention property originates from the suppression of lateral migration of electrons via Frenkel–Poole tunneling.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
81.16.Dn Self-assembly
61.72.Cc Kinetics of defect formation and annealing
73.50.Fq High-field and nonlinear effects
61.46.-w Structure of nanoscale materials

Tensile test of a single nanofiber using an atomic force microscope tip

E. P. S. Tan, C. N. Goh, C. H. Sow, and C. T. Lim

Appl. Phys. Lett. 86, 073115 (2005); http://dx.doi.org/10.1063/1.1862337 (3 pages) | Cited 41 times

Online Publication Date: 10 February 2005

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In this study, an approach using an atomic force microscope (AFM) tip to stretch a single electrospun polyethylene oxide (PEO) nanofiber is demonstrated. One end of the nanofiber is attached to a movable optical microscope stage and the other end of the nanofiber to a piezoresistive AFM cantilever tip. The nanofiber is stretched by moving the microscope stage and the force is measured via the deflection of the cantilever. The elastic modulus of PEO nanofiber is found to be about 45 MPa.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.07.Bc Nanocrystalline materials
87.85.J- Biomaterials
81.70.Bt Mechanical testing, impact tests, static and dynamic loads
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.25.-g Mechanical properties of nanoscale systems
61.46.-w Structure of nanoscale materials
62.20.F- Deformation and plasticity
62.20.D- Elasticity

Hafnium oxide films by atomic layer deposition for high-κ gate dielectric applications: Analysis of the density of nanometer-thin films

Riikka L. Puurunen, Annelies Delabie, Sven Van Elshocht, Matty Caymax, Martin L. Green, Bert Brijs, Olivier Richard, Hugo Bender, Thierry Conard, Ilse Hoflijk, Wilfried Vandervorst, David Hellin, Danielle Vanhaeren, Chao Zhao, Stefan De Gendt, et al.

Appl. Phys. Lett. 86, 073116 (2005); http://dx.doi.org/10.1063/1.1866219 (3 pages) | Cited 13 times

Online Publication Date: 10 February 2005

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The density of hafnium oxide films grown by atomic layer deposition for high-κ gate dielectric applications was investigated for films with thickness in the nanometer range. The density, measured by combining the film thickness from transmission electron microscopy with the amount of hafnium deposited from Rutherford backscattering, decreased with decreasing film thickness. The dielectric constant of hafnium oxide remained constant with decreasing film thickness, however. The main reason for the decrease in the measured density seemed not to be a decrease in the inherent material density. Instead, the relative importance of interface roughness in the density measurement increased with decreasing film thickness.
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77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
68.55.-a Thin film structure and morphology
68.35.Ct Interface structure and roughness
77.22.Ch Permittivity (dielectric function)
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.46.-w Structure of nanoscale materials
73.61.Ng Insulators
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis
68.37.Lp Transmission electron microscopy (TEM)

Quantum steering of electron wave function in an InAs Y-branch switch

G. M. Jones, C. H. Yang, M. J. Yang, and Y. B. Lyanda-Geller

Appl. Phys. Lett. 86, 073117 (2005); http://dx.doi.org/10.1063/1.1867554 (3 pages) | Cited 8 times

Online Publication Date: 11 February 2005

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We report experimental results on gated Y-branch switches made from InAs ballistic electron waveguides. We demonstrate that gating modifies the electron wave functions as well as their interference pattern, resulting in anticorrelated oscillatory transconductances. Our data provide evidence of steering the electron wave function in a multichannel transistor structure.
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85.35.Ds Quantum interference devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.63.Hs Quantum wells
73.23.Ad Ballistic transport
73.21.Fg Quantum wells

Ab initio study of metal gate electrode work function

Seongjun Park, Luigi Colombo, Yoshio Nishi, and Kyeongjae Cho

Appl. Phys. Lett. 86, 073118 (2005); http://dx.doi.org/10.1063/1.1865349 (3 pages) | Cited 27 times

Online Publication Date: 11 February 2005

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The work function of metal multilayers and monolayers on bulk metals was studied using the first principle pseudopotential method within the local density approximation in order to find a way to modulate the work function of metal gate electrodes. Various multilayer stacks and bilayer stacks of two systems, Al–Pt and Al–Ni, were examined. It was found that two or three layers of the metal are enough to shift the work function to that of the surface metal. Also, it was found that even a submonolayer could affect the work function of the bulk metal significantly.
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73.21.Ac Multilayers
73.30.+y Surface double layers, Schottky barriers, and work functions
73.20.At Surface states, band structure, electron density of states
71.15.Dx Computational methodology (Brillouin zone sampling, iterative diagonalization, pseudopotential construction)
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
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