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Applied Physics Letters / Volume 86 / Issue 8 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 86, 083109 (2005); http://dx.doi.org/10.1063/1.1868072 (3 pages)

Time-resolved and time-integrated photoluminescence studies of coupled asymmetric GaN quantum discs embedded in AlGaN barriers

J. H. Na1, R. A. Taylor1, J. H. Rice1, J. W. Robinson1, K. H. Lee1, Y. S. Park2, C. M. Park2, and T. W. Kang2

1Department of Physics, University of Oxford, Parks Road, Oxford, OX1 3PU, United Kingdom
2Quantum-functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Korea

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(Received 20 September 2004; accepted 30 December 2004; published online 18 February 2005)

We have investigated exciton dynamics in asymmetric GaN quantum discs embedded in AlGaN barriers with an Al content of 50% using time-integrated and time-resolved micro-photoluminescence measurements. Emission from the quantum discs emerges at lower energy than that from the GaN nanocolumns, which suggests that GaN quantum discs are strongly affected by the built-in electric field. The lifetimes of localized excitons in quantum discs were obtained. Nonlinear emission from quantum discs under high excitation power was attributed to tunneling of carriers to larger discs from smaller discs.

© 2005 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, gallium compounds, III-V semiconductors, wide band gap semiconductors, semiconductor quantum dots, photoluminescence, excitons, tunnelling, radiative lifetimes, time resolved spectra, nanostructured materials

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.1868072

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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