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28 Feb 2005

Volume 86, Issue 9, Articles (09xxxx)

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Appl. Phys. Lett. 86, 093101 (2005); http://dx.doi.org/10.1063/1.1870108 (3 pages)

G. S. Paraoanu and A. M. Halvari
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Effects of WO3 dopant on the structure and electrical properties of Pb0.97La0.03(Zr0.52Ti0.48)O3 thin films

Santiranjan Shannigrahi and Kui Yao

Appl. Phys. Lett. 86, 092901 (2005); http://dx.doi.org/10.1063/1.1870125 (3 pages) | Cited 16 times

Online Publication Date: 23 February 2005

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Pb0.97La0.03(Zr0.52Ti0.48)O3+xWO3 at % (x = 0, 0.2, 0.5, 1, and 2) (PLWZT) thin films are deposited on Pt–Ti–SiO2–Si substrates using a sol-gel process. We demonstrate that WO3 dopant plays a significant role on the structure and electrical properties of the PLWZT films. X-ray diffraction (XRD) analyses show that the PLWZT films undergo a dramatic tetragonal–to–cubic crystalline phase transformation with a small amount of WO3 additives. X-ray photoelectron spectroscopy (XPS) study shows that the chemical state of W changes with varying concentration of WO3 in the films. Moreover, PLWZT films with a small amount of WO3 doping (0.2 at %) show a decreased conductivity with an improved remnant polarization value of 30 μC/cm2. In addition, compared to the base (PLZT) film, such doping concentration also leads to significantly improved fatigue characteristics. A defect chemistry mechanism indicating the reduction of oxygen vacancies by the substitution of W for Ti at different doping concentrations has been proposed to explain the observed experimental results.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
77.80.Dj Domain structure; hysteresis
68.55.-a Thin film structure and morphology
77.80.B- Phase transitions and Curie point
77.22.Ej Polarization and depolarization
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
61.72.S- Impurities in crystals
61.72.J- Point defects and defect clusters
68.37.Xy Scanning Auger microscopy, photoelectron microscopy
79.60.Bm Clean metal, semiconductor, and insulator surfaces
79.60.Dp Adsorbed layers and thin films
64.70.K- Solid-solid transitions
68.55.A- Nucleation and growth
68.55.Nq Composition and phase identification

Enhanced tunability and phase transition studies in compositionally varying lead magnesium niobate–lead titanate multilayered thin films

R. Ranjith, Apurba Laha, and S. B. Krupanidhi

Appl. Phys. Lett. 86, 092902 (2005); http://dx.doi.org/10.1063/1.1851611 (3 pages) | Cited 11 times

Online Publication Date: 23 February 2005

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Multilayers of (1−x)Pb(Mg1/3Nb2/3)O3–xPbTiO3 thin films were prepared with a compositional variation of PbTiO3 on each layer across the film by pulsed laser ablation technique. The fabricated films were found to possess an enhanced diffusiveness in the dielectric phase transition, which actually seemed to be an envelope of the phase transition of the individual layer relaxor ferroelectrics of a particular composition. They also showed a very high nonlinear dielectric response and hence a high tunability about 70%, an increase of about 40% than that observed for single layer composition. This increase in tunability has been attributed to the lattice strain and the artificially enhanced chemical heterogeneity of the system. These multilayer films also showed a slim hysteresis loop characteristic with a saturation and remnant polarization of 20 and 6 μC/cm2, respectively.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
68.65.Ac Multilayers
68.55.-a Thin film structure and morphology
68.55.Nq Composition and phase identification
77.55.-g Dielectric thin films
77.80.B- Phase transitions and Curie point
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
77.22.Ch Permittivity (dielectric function)

Effective pyroelectric response of compositionally graded ferroelectric materials

S. Zhong, S. P. Alpay, Z.-G. Ban, and J. V. Mantese

Appl. Phys. Lett. 86, 092903 (2005); http://dx.doi.org/10.1063/1.1866505 (3 pages) | Cited 18 times

Online Publication Date: 23 February 2005

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A thermodynamic theory is used to determine the effective pyroelectric coefficients of polarization graded ferroelectrics, with values in excess of 0.1 μC/cm2 °C are predicted for various barium strontium titanate thin films. Maximum values closer to 0.4 μC/cm2 °C are obtained for a 1 μm thick material—compositionally graded between pure barium titanate and one that has barium to strontium in the ratio of 75:25.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
68.55.Nq Composition and phase identification
77.70.+a Pyroelectric and electrocaloric effects
65.40.G- Other thermodynamical quantities
77.22.Ej Polarization and depolarization
77.80.B- Phase transitions and Curie point
77.22.Ch Permittivity (dielectric function)
65.40.De Thermal expansion; thermomechanical effects

Stress effects on ferroelectric and fatigue properties of Nd- and La-doped Bi4Ti3O12 thin films

Xiumei Wu, Xiaomei Lu, Aiping Chen, Yuan Yin, Jun Ma, Wei Li, Yi Kan, Dong Qian, and Jinsong Zhu

Appl. Phys. Lett. 86, 092904 (2005); http://dx.doi.org/10.1063/1.1873063 (3 pages) | Cited 9 times

Online Publication Date: 24 February 2005

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The ferroelectric properties of Bi3.15Nd0.85Ti3O12 and Bi3.25La0.75Ti3O12 thin films under applied uniaxial stress were investigated. It was observed in both films that the remnant polarization (Pr) increased with tensile stress, while it decreased with compressive stress. On the contrary, the coercive field (Ec) decreased with the stress changing from maximum compression to maximum tension. Fatigue behavior of the films was improved under either compressive or tensile stress compared with zero stress (free state). These results can be well explained in the scenario of domain reorientation under stress; however, the polarization-strain coupling mechanism could not be simply ruled out.
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77.80.-e Ferroelectricity and antiferroelectricity
77.55.-g Dielectric thin films

Polarization switching kinetics of epitaxial Pb(Zr0.4Ti0.6)O3 thin films

Y. W. So, D. J. Kim, T. W. Noh, Jong-Gul Yoon, and T. K. Song

Appl. Phys. Lett. 86, 092905 (2005); http://dx.doi.org/10.1063/1.1870126 (3 pages) | Cited 52 times

Online Publication Date: 25 February 2005

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The polarization switching kinetics of epitaxial Pb(Zr0.4Ti0.6)O3 thin films were investigated by measuring write pulse-width dependences of switched polarization ΔP(t) under various applied electric fields. It was found that ΔP(t) follows the predictions of the Kolmogorov–Avrami–Ishibashi model quite well. However, the detailed behaviors of ΔP(t) were different for low and high electric field regions, which separated out around 220 kV/cm. The coercive field also showed different frequency dependences depending on the region. These differences were attributed to changes in the polarization switching kinetics. A possible origin of the switching kinetics changes is also discussed.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.Fm Switching phenomena
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis

Variations of differential capacitance in SrBi2Ta2O9 ferroelectric films induced by photoperturbation

Ching-Chich Leu, Chao-Hsin Chien, Chih-Yuan Chen, Mao-Nan Chang, Fan-Yi Hsu, Chen-Ti Hu, and Yung-Fu Chen

Appl. Phys. Lett. 86, 092906 (2005); http://dx.doi.org/10.1063/1.1879089 (3 pages) | Cited 5 times

Online Publication Date: 25 February 2005

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In this letter, we demonstrated the impact of illumination on the differential capacitance variation of a strontium bismuth tantalite (SBT) capacitor during scanning capacitance microscopy measurements. It was found that illumination with a stray light of laser in an atomic force microscope could perturb the dC/dV signals of the samples. We attribute this phenomenon to the generation of free carriers by the photon absorptions via defect traps in the SBT thin film. Therefore, this present work suggests that the effect of laser illumination must be carefully taken into consideration whenever a field-sensitive technique is employed to analyze the properties of a ferroelectric material.
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84.32.Tt Capacitors
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
73.61.Ng Insulators
77.55.-g Dielectric thin films
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
68.37.Ps Atomic force microscopy (AFM)
68.55.-a Thin film structure and morphology

Imaging of out-of-plane interfacial strain in epitaxial PbTiO3/SrTiO3 thin films

A. T. J. van Helvoort, Ø. Dahl, B. G. Soleim, R. Holmestad, and T. Tybell

Appl. Phys. Lett. 86, 092907 (2005); http://dx.doi.org/10.1063/1.1874303 (3 pages) | Cited 10 times

Online Publication Date: 25 February 2005

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In this study, we rely on low-angle annular dark-field scanning transmission electron microscopy to probe the interface strain profile in epitaxial PbTiO3/SrTiO3 thin-films. All samples displayed a compressively strained layer at the PbTiO3/SrTiO3 interface, with the strain vector parallel to the polarization direction. The width of the strained layer was found to be ∼ 15–30 Å, dependent on the electrode environment. Our findings open a perspective to use interface strain engineering in combination with control of electrostatic boundary conditions as a tool to monitor the effective interface polarization. These findings have implications for future use of ferroelectrics in electronic and mechanical devices.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
68.60.Bs Mechanical and acoustical properties
77.22.Ej Polarization and depolarization
68.55.-a Thin film structure and morphology
68.35.Ct Interface structure and roughness
68.37.Lp Transmission electron microscopy (TEM)
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