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12 Sep 2005

Volume 87, Issue 11, Articles (11xxxx)

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Appl. Phys. Lett. 87, 113902 (2005); http://dx.doi.org/10.1063/1.2045549 (3 pages)

M. Laroussi and X. Lu
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Tunable multiferroic properties in nanocomposite PbTiO3–CoFe2O4 epitaxial thin films

M. Murakami, K.-S. Chang, M. A. Aronova, C.-L. Lin, Ming H. Yu, J. Hattrick Simpers, M. Wuttig, I. Takeuchi, C. Gao, B. Hu, S. E. Lofland, L. A. Knauss, and L. A. Bendersky

Appl. Phys. Lett. 87, 112901 (2005); http://dx.doi.org/10.1063/1.2041825 (3 pages) | Cited 27 times

Online Publication Date: 6 September 2005

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We report on the synthesis of PbTiO3–CoFe2O4 multiferroic nanocomposites and continuous tuning of their ferroelectric and magnetic properties as a function of the average composition on thin-film composition spreads. The highest dielectric constant and nonlinear dielectric signal was observed at (PbTiO3)85–(CoFe2O4)15, where robust magnetism was also observed. Transmission electron microscopy revealed a pancake-shaped epitaxial nanostructure of PbTiO3 on the order of 30 nm embedded in the matrix of CoFe2O4 at this composition. Composition dependent ferroics properties observed here indicate that there is considerable interdiffusion of cations into each other.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
68.35.Fx Diffusion; interface formation
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Ch Permittivity (dielectric function)
68.37.Lp Transmission electron microscopy (TEM)

BaTi4O9 thin films for high-performance metal-insulator-metal capacitors

Bo-Yun Jang, Beom-Jong Kim, Suk-Jin Lee, Kyong-Jae Lee, Sahn Nahm, Ho-Jung Sun, and Hwack-Joo Lee

Appl. Phys. Lett. 87, 112902 (2005); http://dx.doi.org/10.1063/1.2048827 (3 pages) | Cited 15 times

Online Publication Date: 8 September 2005

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The dielectric and electrical properties of a BaTi4O9 film were investigated in order to evaluate its potential use in metal-insulator-metal (MIM) capacitors for rf/mixed signal integrated circuits. A high capacitance density of 4.62 fF/μm2 along with a low tan δ of 0.0025 were obtained at 100 kHz. A high capacitance density of 4.12 fF/μm2 and a high quality factor of 322 were also achieved at 2 GHz. The leakage current density was approximately 1 nA/cm2 at ±2 V. Small linear and quadratic voltage coefficients of capacitance of 110 ppm/V and 40.05 ppm/V2, respectively, and a small temperature coefficient of capacitance of −92.157 ppm/°C at 100 kHz were obtained. These results demonstrate that the BaTi4O9 film is a good candidate material for MIM capacitors.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.22.Gm Dielectric loss and relaxation
73.40.Rw Metal-insulator-metal structures
84.32.Tt Capacitors

Ferroelectric-like hysteresis loop in nonferroelectric systems

L. Pintilie and M. Alexe

Appl. Phys. Lett. 87, 112903 (2005); http://dx.doi.org/10.1063/1.2045543 (3 pages) | Cited 19 times

Online Publication Date: 9 September 2005

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A ferroelectric-like hysteresis loop is obtained for a nonferroelectric system consisting of two back-to-back metal-semiconductor Schottky contacts with a large concentration of traps distributed over a finite thickness near the electrodes. The presented results show that a simple hysteresis loop measured at a single frequency is not always solid evidence of ferroelectricity in low-dimensional structures such as thin films or nanoscale structures.
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77.80.Dj Domain structure; hysteresis
73.40.Ns Metal-nonmetal contacts

Effects of the oxygen precursor on the electrical and structural properties of HfO2 films grown by atomic layer deposition on Ge

S. Spiga, C. Wiemer, G. Tallarida, G. Scarel, S. Ferrari, G. Seguini, and M. Fanciulli

Appl. Phys. Lett. 87, 112904 (2005); http://dx.doi.org/10.1063/1.2042631 (3 pages) | Cited 23 times

Online Publication Date: 9 September 2005

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We report on the growth by atomic layer deposition of HfO2 films on HF-last treated Ge(001) substrates using HfCl4 as a Hf source and either O3 or H2O as oxygen sources. The choice of the oxygen precursor strongly influences the structural, chemical, and electrical properties of the HfO2 films: Those grown using H2O exhibit local epitaxial growth, a large amount of contaminants such as chlorine and carbon, and a large frequency dispersion of the capacitance-voltage (C–V) characteristics. Films grown using O3 are good insulators and exhibit well-shaped C–V curves with a minimum frequency dispersion of the accumulation capacitance. Moreover, they are smoother, less crystallized, and with a lower contaminant content than those grown using H2O. However, the use of O3 leads to the formation of a 2 nm thick layer, possibly GeOx, at the HfO2/Ge interface.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
73.61.Ng Insulators
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
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