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12 Sep 2005

Volume 87, Issue 11, Articles (11xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 87, 113902 (2005); http://dx.doi.org/10.1063/1.2045549 (3 pages)

M. Laroussi and X. Lu
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Low-temperature growth of β‐Ga2O3 nanobelts through a simple thermochemical route and their phonon spectra properties

B. Y. Geng, X. W. Liu, X. W. Wei, S. W. Wang, and L. D. Zhang

Appl. Phys. Lett. 87, 113101 (2005); http://dx.doi.org/10.1063/1.2041834 (3 pages)

Online Publication Date: 6 September 2005

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Monoclinic structured β‐Ga2O3 nanobelts have been synthesized through a simple thermochemical route at low temperature in range of 400–500 °C. Each nanobelt has a uniform width of about several hundred nanometers and a thickness of about 10 nm along its entire length. Micro-Raman spectrum of the β‐Ga2O3 nanobelts shows that the four weak Raman bands at 112, 146, 170, and 266 cm−1 which seem to correspond to infrared (IR)-active transverse optical (TO) Au mode and∕or longitudinal optical (LO) Bu mode, respectively. The IR-active bands in the Raman spectrum and the surface mode in the IR spectrum may relate to the nanoscale morphology of the nanobelts.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.46.-w Structure of nanoscale materials
78.30.Hv Other nonmetallic inorganics
63.20.D- Phonon states and bands, normal modes, and phonon dispersion

Mechanical properties of self-welded silicon nanobridges

Massood Tabib-Azar, Maissarath Nassirou, Run Wang, S. Sharma, T. I. Kamins, M. Saif Islam, and R. Stanley Williams

Appl. Phys. Lett. 87, 113102 (2005); http://dx.doi.org/10.1063/1.2042549 (3 pages) | Cited 44 times

Online Publication Date: 6 September 2005

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Mechanical properties of self-welded [111] single-crystal silicon nanowire bridges grown between two silicon posts using metal-catalyzed chemical vapor deposition were determined using both dynamic and static measurements. The static tests were carried out using atomic force microscopy (AFM) to measure the nanowires’ Young’s modulus and the strength of the self-welded junctions. The AFM-measured Young’s modulus ranged from 93 to 250 GPa (compared to 185 GPa for bulk silicon in the [111] direction) depending on the nanowire diameter, which ranged from 140 to 200 nm. The self-welded wire could withstand a maximum bending stress in the range of 210–830 MPa (larger than bulk silicon), which also depended on the nanowire diameter and loading conditions. The beam broke close to the loading point, rather than at the self-welded junction, indicating the excellent bond strength of the self-welded junction. The vibration spectra measured with a network analyzer and a dc magnetic field indicated a dynamic Young’s modulus of 140 GPa, in good agreement (within the experimental error) with the static measurement results.
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81.07.Vb Quantum wires
68.65.La Quantum wires (patterned in quantum wells)
61.46.-w Structure of nanoscale materials
81.05.Cy Elemental semiconductors
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity
68.37.Ps Atomic force microscopy (AFM)
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity

Architecture and engineering of a supramolecular functional material by manipulating the nanostructure of fiber network

Jing-Liang Li and Xiang-Yang Liu

Appl. Phys. Lett. 87, 113103 (2005); http://dx.doi.org/10.1063/1.2042552 (3 pages) | Cited 4 times

Online Publication Date: 6 September 2005

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Three-dimensional fiber networks were created from an organogel system consisting mainly of elongated fibrils by using a nonionic surfactant as an additive. The presence of the surfactant molecules manipulates the network structure by enhancing the mismatch nucleation on the growing fiber tips. Both the fiber network structure and the rheological properties of the material can be finely tuned by changing the surfactant concentration, which provides a robust approach to the engineering of supramolecular soft functional materials.
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61.46.-w Structure of nanoscale materials
82.70.Gg Gels and sols

Controlling growth and field emission properties of silicon nanotube arrays by multistep template replication and chemical vapor deposition

Cheng Mu, Yuxiang Yu, Wei Liao, Xinsheng Zhao, Dongsheng Xu, Xihong Chen, and Dapeng Yu

Appl. Phys. Lett. 87, 113104 (2005); http://dx.doi.org/10.1063/1.2042545 (3 pages) | Cited 24 times

Online Publication Date: 6 September 2005

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A multistep template replication route was employed to fabricate highly ordered silicon nanotube (SiNT) arrays, in which annular nanochannel membranes were produced first, and then silicon was deposited into the annular nanochannels by pyrolytic decomposition of silane. Electron microscopy revealed that these SiNTs are highly crystalline and the wall thicknesses can be controlled by the spaces of the annular nanochannel. Field emission characterization showed that the turn-on field and threshold field for the SiNT arrays are about 5.1 V/μm and 7.3 V/μm, respectively. These results represent one of the lowest fields ever reported for Si field emission materials at technologically useful current densities.
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81.05.Cy Elemental semiconductors
81.07.De Nanotubes
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
79.70.+q Field emission, ionization, evaporation, and desorption
61.46.-w Structure of nanoscale materials
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
81.16.Be Chemical synthesis methods

Defect dissolution in strain-compensated stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

N. Nuntawong, S. Huang, Y. B. Jiang, C. P. Hains, and D. L. Huffaker

Appl. Phys. Lett. 87, 113105 (2005); http://dx.doi.org/10.1063/1.2042638 (3 pages) | Cited 6 times

Online Publication Date: 6 September 2005

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We report a highly effective growth technique to both dissolve large islands and prevent further defect propagation in closely spaced (15 nm) stacked quantum dot (QD) active regions while maintaining an emission wavelength >1.3 μm. Island dissolution is accomplished via an In flush, which is an AsH3 pause inserted into the growth sequence just after each QD layer is capped. The low V∕III ratio enables the flushing of surface In atoms from the defect sites while the fully capped QDs remain intact. This technique eliminates the need for in situ annealing that activates the In flush in other growth scenarios and results in large emission blueshift. Strain propagation within the closely spaced QD stacks is reduced by GaP strain-compensation layers. Room-temperature photoluminescence confirms ground-state emission wavelength >1.34 μm. Atomic force microscopy and transmission electron microscopy confirm improved surface morphology and crystalline quality of stacked QD active regions. The resulting structures are suitable for long-wavelength lasers, especially vertical cavity surface-emitting laser applications in which high modal gain is attractive.
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81.07.Ta Quantum dots
68.65.Hb Quantum dots (patterned in quantum wells)
78.55.Cr III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
64.75.-g Phase equilibria
78.67.Hc Quantum dots

Formation of nanopores in a SiN/SiO2 membrane with an electron beam

Meng-Yue Wu, Diego Krapf, Mathijs Zandbergen, Henny Zandbergen, and Philip E. Batson

Appl. Phys. Lett. 87, 113106 (2005); http://dx.doi.org/10.1063/1.2043247 (3 pages) | Cited 30 times

Online Publication Date: 7 September 2005

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An electron beam can drill nanopores in SiO2 or silicon nitride membranes and shrink a pore to a smaller diameter. Such nanopores are promising for single molecule detection. The pore formation in a 40 nm thick silicon nitride∕SiO2 bilayer using an electron beam with a diameter of 8 nm (full width of half height) was investigated by electron energy loss spectroscopy with silicon nitride facing toward and away from the source. The O loss shows almost linear—independent of which layer faces the source, while N loss is quite complicated. After the formation of a pore, the membrane presents a wedge shape over a 70 nm radius around the nanopore.
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81.05.Rm Porous materials; granular materials
81.07.-b Nanoscale materials and structures: fabrication and characterization
61.46.-w Structure of nanoscale materials
61.43.Gt Powders, porous materials
81.16.-c Methods of micro- and nanofabrication and processing
79.20.Uv Electron energy loss spectroscopy
61.82.Fk Semiconductors
61.80.Fe Electron and positron radiation effects

Single-crystalline nanotubes of IIB-VI semiconductors

J. Q. Hu, Y. Bando, J. H. Zhan, M. Y. Liao, D. Golberg, X. L. Yuan, and T. Sekiguchi

Appl. Phys. Lett. 87, 113107 (2005); http://dx.doi.org/10.1063/1.2042634 (3 pages) | Cited 17 times

Online Publication Date: 7 September 2005

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Wurtzite-type CdS and CdSe nanotubes have been grown via a Sn nanowire-templated route under thermal annealing. The tubes are structurally uniform and defect-free single crystals, and partially or completely filled with Sn nanowires; most of the tubes display pin-like structures showing significant tapering along their axes. Cathodoluminescence spectra reveal that CdS and CdSe nanotubes have profound emission peaks at ∼ 512 and ∼ 724 nm. The luminescence intensities vary between Sn filled and unfilled tube parts. Keeping in mind that ZnS and ZnSe nanotubes may also be synthesized using the similar technique, we propose that the present method is a universal synthetic route toward single-crystalline IIB-VI group semiconductor nanotubes.
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81.07.De Nanotubes
81.05.Dz II-VI semiconductors
81.16.-c Methods of micro- and nanofabrication and processing
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.60.Hk Cathodoluminescence, ionoluminescence
78.67.Ch Nanotubes
61.72.Cc Kinetics of defect formation and annealing

Characterization of SnO2 nanowires as an anode material for Li-ion batteries

Z. Ying, Q. Wan, H. Cao, Z. T. Song, and S. L. Feng

Appl. Phys. Lett. 87, 113108 (2005); http://dx.doi.org/10.1063/1.2045550 (3 pages) | Cited 44 times

Online Publication Date: 8 September 2005

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SnO2 nanowires synthesized by thermal evaporation method are investigated as a possible anode electrode for Li-ion batteries. In the first discharge process, the capacity of Li ions is 2133 mA h g−1, which is much more than the theoretical total capacity of the bulk SnO2, 1494 mA h g−1. During the successive 15 cycles, the reversible capacity stays in the range of 1250–700 mA h g−1 with a capacity fading of 3.89% per cycle at a constant current density of 0.5 mA cm−2. These results demonstrate that SnO2 nanowires are a promising anode material for Li-ion battery applications.
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82.45.Fk Electrodes
82.47.Aa Lithium-ion batteries
68.65.La Quantum wires (patterned in quantum wells)
81.07.Vb Quantum wires
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Growth of inclined boron nanowire bundle arrays in an oxide-assisted vapor-liquid-solid process

S. H. Yun, J. Z. Wu, A. Dibos, X. Gao, and U. O. Karlsson

Appl. Phys. Lett. 87, 113109 (2005); http://dx.doi.org/10.1063/1.2046728 (3 pages) | Cited 12 times

Online Publication Date: 8 September 2005

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In the vapor-liquid-solid process typically employed for semiconductor nanowire growth, nucleation and anisotropic crystal growth of single nanowires are achieved with generation of a solid/liquid alloy interface using metal catalysts. The nucleation and growth mechanism of nanowires may be greatly altered when a second liquid is introduced into the solid/liquid alloy interface. In this work, we demonstrate bundled boron nanowire (BNW) array growth on Au coated Si substrates by introducing a second liquid of B2O3 onto the solid (B)/liquid alloy (Au-B) interface. The BNWs in each bundle are straight but highly inclined with respect to the normal of the substrate. A study of BNW morphology and chemical elemental distribution using electron microscopy and energy dispersive x-ray spectroscopy suggested that the catalyst Au provided the nucleation site for BNW bundles while the liquid B2O3 modified the initiation of BNWs from each nucleation site, resulting in multiple initiation of the BNWs from each site.
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81.07.Bc Nanocrystalline materials
81.05.Cy Elemental semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.16.-c Methods of micro- and nanofabrication and processing
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods

Tungsten nanocrystals embedded in high-k materials for memory application

S. K. Samanta, Won Jong Yoo, Ganesh Samudra, Eng Soon Tok, L. K. Bera, and N. Balasubramanian

Appl. Phys. Lett. 87, 113110 (2005); http://dx.doi.org/10.1063/1.2045555 (3 pages) | Cited 33 times

Online Publication Date: 9 September 2005

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The formation of tungsten nanocrystals (W-NCs) on atomic-layer-deposited HfAlO/Al2O3 tunnel oxide was demonstrated for application in a memory device. It was found that the density and size distribution of W-NCs are not only controlled by the initial film thickness, annealing temperature, and time, but also by the metal∕tunnel oxide interface structure. Well-isolated W-NCs with an average diameter of 5 nm and a surface density of 5×1011 cm−2 were obtained by applying a thin Al2O3 wetting layer onto HfAlO tunneling oxide. A large flatband voltage shift of 5.7 V was observed from capacitance–voltage measurement when a bias voltage up to ±4 V was applied.
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81.07.Bc Nanocrystalline materials
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
68.35.Ct Interface structure and roughness
73.40.Ns Metal-nonmetal contacts
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.40.Gh Other heat and thermomechanical treatments
61.46.-w Structure of nanoscale materials

Electron-beam-induced growth of silicon multibranched nanostructures

Luis F. Fonseca, Oscar Resto, and Francisco Solá

Appl. Phys. Lett. 87, 113111 (2005); http://dx.doi.org/10.1063/1.2045564 (3 pages) | Cited 4 times

Online Publication Date: 9 September 2005

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Although successful nanobranching has been demonstrated for some materials using a variety of methods, the controlled fabrication of multibranched nanostructures of silicon is an important challenge faced by nanotechnologist; because it is crucial for the assembly of electronic interconnects at the atomic scale. Here, we report an electron-beam-induced approach that enables to grow silicon nanobranched structures at specific locations and to control the growth process at the nanoscale level. We further present a detailed in situ imaging of the growth dynamics and explain the results by a qualitative model based on local heating and charge concentration processes.
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81.07.Bc Nanocrystalline materials
81.05.Cy Elemental semiconductors
61.82.Rx Nanocrystalline materials
61.46.-w Structure of nanoscale materials
73.63.Bd Nanocrystalline materials

Room-temperature operation of a nanoelectromechanical resonator embedded in a phase-locked loop

T. Kouh, O. Basarir, and K. L. Ekinci

Appl. Phys. Lett. 87, 113112 (2005); http://dx.doi.org/10.1063/1.2048813 (3 pages) | Cited 5 times

Online Publication Date: 9 September 2005

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We describe the operation of a phase-locked loop (PLL) that tracks the high-frequency electromechanical resonance of a nanoscale beam resonator. The fundamental in-plane flexural resonance of the beam resonator embedded in the PLL is actuated electrostatically and detected optically. PLL operation is demonstrated by locking stably to the resonance frequency of the beam, and by tracking this resonance with high fidelity as the beam is mass loaded. Our analysis reproduces the observed locking behavior. Feedback control schemes for nanoelectromechanical resonators may offer prospects for miniature timekeeping devices and ultrasensitive sensors.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
07.10.Cm Micromechanical devices and systems

TiO2 single-crystalline nanorod electrode for quasi-solid-state dye-sensitized solar cells

Mi Yeon Song, Young Rack Ahn, Seong Mu Jo, Dong Young Kim, and Jae-Pyoung Ahn

Appl. Phys. Lett. 87, 113113 (2005); http://dx.doi.org/10.1063/1.2048816 (3 pages) | Cited 66 times

Online Publication Date: 9 September 2005

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TiO2 single-crystalline nanorods are prepared from electrospun fibers which are composed of nanofibrils with an islands-in-a-sea morphology. The mechanical pressure produces each fibril into nanorods which are converted to anatase single crystals after calcination. High-resolution transmission electron microscopy shows that the (001) plane is growing along the longitudinal direction of the rod. In this work, the nanorod electrode provides the efficient photocurrent generation in a quasi-solid-state dye-sensitized solar cell using highly viscous poly(vinylidenefluoride-co-hexafluoropropylene)-based gel electrolytes. The overall conversion efficiency of the TiO2 nanorods shows 6.2% under 100 mW/cm2 (AM 1.5 G) illumination.
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81.07.Bc Nanocrystalline materials
84.60.Jt Photoelectric conversion
81.16.-c Methods of micro- and nanofabrication and processing
72.40.+w Photoconduction and photovoltaic effects
81.40.Gh Other heat and thermomechanical treatments

Patterning of ferroelectric nanodot arrays using a silicon nitride shadow mask

Hyung-Joon Shin, Je Hyuk Choi, Hee Jun Yang, Young Dae Park, Young Kuk, and Chi-Jung Kang

Appl. Phys. Lett. 87, 113114 (2005); http://dx.doi.org/10.1063/1.2048818 (3 pages) | Cited 17 times

Online Publication Date: 9 September 2005

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We grew well-ordered arrays of ferroelectric Pb(Zr0.2Ti0.8)O3 (PZT) nanodots on a SrRuO3/SrTiO3 substrate by pulsed laser deposition. A silicon nitride shadow mask with ordered holes was used for patterning of the PZT arrays. Each dot has a height of ∼ 15 nm and a diameter of ∼ 120 nm with a similar dome shape over a large area. The ferroelectric properties of individual PZT dots were investigated by piezoresponse force microscopy. A single dot could be polarized individually and the polarized state remained unrelaxed to ∼ 20 min.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.07.Bc Nanocrystalline materials
81.16.Rf Micro- and nanoscale pattern formation
81.16.Nd Micro- and nanolithography
61.46.-w Structure of nanoscale materials
77.22.Ej Polarization and depolarization

White-light emission of polyvinyl alcohol∕ZnO hybrid nanofibers prepared by electrospinning

X. M. Sui, C. L. Shao, and Y. C. Liu

Appl. Phys. Lett. 87, 113115 (2005); http://dx.doi.org/10.1063/1.2048808 (3 pages) | Cited 55 times

Online Publication Date: 9 September 2005

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Polyvinyl alcohol∕ZnO (PVA∕ZnO) hybrid nanofibers were prepared by the electrospinning technique. The structural and spectral information of the nanofibers was characterized by scanning electron microscopy, x-ray diffraction, Fourier transform infrared spectroscopy, differential scanning calorimetry, resonant Raman, and photoluminescence (PL). The results indicate that ZnO were successfully embedded in the one-dimensional hybrid fibers via chemical interactions between ZnO and PVA. PL results show the PVA∕ZnO nanofibers have an intense white-light emission, which originates from the simultaneous emission of three bands covering from the UV to visible range. A possible PL mechanism was proposed accordingly.
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78.55.-m Photoluminescence, properties and materials
61.46.-w Structure of nanoscale materials
78.30.-j Infrared and Raman spectra
81.07.Bc Nanocrystalline materials
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