APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

19 Sep 2005

Volume 87, Issue 12, Articles (12xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 87, 123111 (2005); http://dx.doi.org/10.1063/1.2053370 (3 pages)

Xianghui Zhang, Ye Zhang, Jun Xu, Zhe Wang, Xihong Chen, Dapeng Yu, Peng Zhang, Hanhong Qi, and Yongjun Tian
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Mechanism of tantalum adhesion on SiLK™

Yue Hu, Shuo-Wang Yang, Xian Tong Chen, Dong Lu, Yuan Ping Feng, and Ping Wu

Appl. Phys. Lett. 87, 123501 (2005); http://dx.doi.org/10.1063/1.2051792 (3 pages) | Cited 2 times

Online Publication Date: 12 September 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Tantalum adhesion on SiLK™ was investigated using first-principles method based on density functional theory. Phenylene groups were found to play a major role and the adjacent semi-benzene rings also contribute significantly to Ta adhesion on SiLK™. In addition, the degradation effects of H2/He reactive plasma clean on Ta adhesion on SiLK™ was investigated. Based on our findings, argon plasma treatment was suggested and implemented after reactive plasma cleaning process, which resulted in integration of SiLK™ with Cu up to seven metal layers.
Show PACS
68.35.Np Adhesion
52.77.Bn Etching and cleaning

Meyer-Neldel rule and the influence of entropy on capture cross-section determination in Cu(In,Ga)Se2

Jehad A. M. AbuShama, S. W. Johnston, R. S. Crandall, and R. Noufi

Appl. Phys. Lett. 87, 123502 (2005); http://dx.doi.org/10.1063/1.2051796 (3 pages) | Cited 4 times

Online Publication Date: 12 September 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We use deep-level transient spectroscopy (DLTS) to investigate the electronic properties of ZnO/CdS/CuxIn1−yGaySe2/Mo∕soda-lime glass thin-film solar cells. We deposited films with different x and y values using elemental evaporation. Devices made from these films exhibit more than 40 hole and electron traps, with activation energies ranging from 0.07 to 1.17 eV. Standard DLTS analysis (which assumes that entropy changes can be neglected) gives apparent capture cross sections that vary by 18 orders of magnitude over this energy range. All our data show that the charge-carrier emission rate obeys the Meyer-Neldel rule (MNR) with an isokinetic temperature of 340±30 K. By including the MNR relation in detailed balance, we show that there is a single cross section for all the traps.
Show PACS
71.55.Ht Other nonmetals
71.55.Gs II-VI semiconductors
65.40.G- Other thermodynamical quantities
73.61.Ga II-VI semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
84.60.Jt Photoelectric conversion

Solid-state supercapacitors for electronic device applications

Liping Ma and Yang Yang

Appl. Phys. Lett. 87, 123503 (2005); http://dx.doi.org/10.1063/1.2051797 (3 pages) | Cited 8 times

Online Publication Date: 13 September 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report an all-solid-state supercapacitor with device fabrication by a simple vacuum thermal evaporation method, which allows not only a multilayer stacking structure to further enhance the capacitance, but also permits the supercapacitor to be easily incorporated with other electronic devices, showing interesting characteristics for both fundamental study and practical applications. Discussions about the mechanism of the supercapacitor is given.
Show PACS
82.47.Uv Electrochemical capacitors; supercapacitors
84.32.Tt Capacitors
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Differential current amplification in three-terminal Y-junction carbon nanotube devices

B. R. Perkins, D. P. Wang, D. Soltman, A. J. Yin, J. M. Xu, and A. Zaslavsky

Appl. Phys. Lett. 87, 123504 (2005); http://dx.doi.org/10.1063/1.2048812 (3 pages) | Cited 6 times

Online Publication Date: 13 September 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present three-terminal transistor-like operation of Y-junction carbon nanotubes with three independent contacts. Using one of the terminals as a controlling gate, differential current gain of up to 300 is observed at low temperature (4.2 K) in the biasing region where the gate current is small. We present evidence that the observed transistor characteristics can be ascribed to a new amplification mechanism: gated hopping via conducting grains.
Show PACS
85.35.Kt Nanotube devices
84.30.Le Amplifiers

Piezo-effect and physics of CdS-based thin-film photovoltaics

Diana Shvydka, J. Drayton, A. D. Compaan, and V. G. Karpov

Appl. Phys. Lett. 87, 123505 (2005); http://dx.doi.org/10.1063/1.2056607 (3 pages) | Cited 10 times

Online Publication Date: 13 September 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report a strong reversible piezo-effect in CdTe/CdS photovoltaics consistent with the piezo parameters of CdS. Our finding suggests a different understanding of CdS-based solar cells including CdTe- and CuIn(Ga)Se-based devices. Because the CdS film is put into compression in the device, the piezo coupling generates surface charges and the electric field opposing that of the absorber layer. The corresponding potential barrier makes CdS insulating and the device operate in a metal-insulator-semiconductor mode. Our understanding introduces the concept of piezo-photovoltaics and suggests specific practical implications.
Show PACS
73.50.Pz Photoconduction and photovoltaic effects
73.61.Ga II-VI semiconductors
77.65.Ly Strain-induced piezoelectric fields

Nanopillar transistors exhibiting single-electron quantum effects at room temperature

Yue-Min Wan, Heng-Tein Lin, Chin-Lung Sung, and Shu-Fen Hu

Appl. Phys. Lett. 87, 123506 (2005); http://dx.doi.org/10.1063/1.2056577 (3 pages) | Cited 3 times

Online Publication Date: 14 September 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A nanoelectronic device consisting of a SiNx/Si/SiNx nanopillar and a side electrical gate has been assembled to display single-electron resonance tunneling and Coulomb modulation at 300 K. The device features an ultrasmall quantum dot of size ∼ 10×10×3 nm3 and its manufacture is fully silicon processing compatible. We find a simple guideline to derive the gate-dot coupling strength α by comparison of the peak spacing in the current-voltage (I-V) characteristics of Id−Vd and Id−Vg at low voltage. The better-defined quantum cavity enables us to apply a three-dimensional single-particle model to identify the excited quantum states.
Show PACS
85.35.Gv Single electron devices
81.07.Ta Quantum dots

Magnetic nanowire based high resolution magnetic force microscope probes

G. Yang, J. Tang, S. Kato, Q. Zhang, L. C. Qin, M. Woodson, J. Liu, J. W. Kim, P. T. Littlehei, C. Park, and O. Zhou

Appl. Phys. Lett. 87, 123507 (2005); http://dx.doi.org/10.1063/1.2043237 (3 pages) | Cited 8 times

Online Publication Date: 15 September 2005

Full Text: Read Online (HTML) | Download PDF


See Also: Erratum

Show Abstract
We report an efficient process for controlled fabrication of high-resolution magnetic force microscope probes using preformed magnetic nanowires. Nickel and cobalt nanowires produced by electrodeposition were directly assembled onto the tip of a commercial atomic force microscope cantilever with controlled orientation and length by dielectrophoresis. The properties of these nanowire-based probes are characterized.
Show PACS
07.79.Pk Magnetic force microscopes
82.45.Qr Electrodeposition and electrodissolution
81.16.-c Methods of micro- and nanofabrication and processing
82.45.-h Electrochemistry and electrophoresis

Polymer-based organic field-effect transistor using offset printed source/drain structures

Dirk Zielke, Arved C. Hübler, Ulrich Hahn, Nicole Brandt, Matthias Bartzsch, Uta Fügmann, Thomas Fischer, Janos Veres, and Simon Ogier

Appl. Phys. Lett. 87, 123508 (2005); http://dx.doi.org/10.1063/1.2056579 (3 pages) | Cited 44 times

Online Publication Date: 15 September 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Organic field-effect transistors were fabricated using offset printed source/drain structures. Interdigitated electrode structures were printed with a poly(3,4–ethylenedioxythiophene) (PEDOT) formulation. A polymeric semiconductor polytriarylamine and different insulator layers were deposited by spin coating. A field-effect mobility of 3×10−3 cm2 V−1 s−1 and on/off ratio of about 103 was achieved, making it possible to produce digital logic elements.
Show PACS
85.30.Tv Field effect devices
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close