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19 Sep 2005

Volume 87, Issue 12, Articles (12xxxx)

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Appl. Phys. Lett. 87, 123111 (2005); http://dx.doi.org/10.1063/1.2053370 (3 pages)

Xianghui Zhang, Ye Zhang, Jun Xu, Zhe Wang, Xihong Chen, Dapeng Yu, Peng Zhang, Hanhong Qi, and Yongjun Tian
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Charge trapping and detrapping characteristics in hafnium silicate gate dielectric using an inversion pulse measurement technique

Rino Choi, S. C. Song, C. D. Young, Gennadi Bersuker, and Byoung Hun Lee

Appl. Phys. Lett. 87, 122901 (2005); http://dx.doi.org/10.1063/1.2043252 (3 pages) | Cited 14 times

Online Publication Date: 16 September 2005

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Threshold voltage (VTH) instability in metal oxide semiconductor field transistors (MOSFETs) with high dielectric constant (k) gate dielectrics has been investigated with an inversion pulse measurement technique, which can detect fast dielectric charging/discharging within microseconds (μs). The results indicate that VTH instability can be significantly underestimated by conventional VTH measurement techniques. Based on temperature-dependent stress data, it is suggested that charging and discharging are determined by direct tunneling and thermally assisted processes, respectively.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
85.30.Tv Field effect devices
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