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19 Sep 2005

Volume 87, Issue 12, Articles (12xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 87, 123111 (2005); http://dx.doi.org/10.1063/1.2053370 (3 pages)

Xianghui Zhang, Ye Zhang, Jun Xu, Zhe Wang, Xihong Chen, Dapeng Yu, Peng Zhang, Hanhong Qi, and Yongjun Tian
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Exchange spring structures and coercivity reduction in FePt/FeRh bilayers: A comparison of multiscale and micromagnetic calculations

F. Garcia-Sanchez, O. Chubykalo-Fesenko, O. Mryasov, R. W. Chantrell, and K. Yu. Guslienko

Appl. Phys. Lett. 87, 122501 (2005); http://dx.doi.org/10.1063/1.2051789 (3 pages) | Cited 16 times

Online Publication Date: 12 September 2005

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Calculations of magnetization reversal mechanism and coercivity reduction in exchange coupled FePt/FeRh bilayers are presented. It is shown by comparison with atomistic model calculations that the use of a standard micromagnetic model leads to an underestimation of the exchange energy at the interface, leading to a reduced coercivity decrease for small interfacial exchange energy constant. This is due to the failure of the domain wall (DW) to penetrate the hard FePt phase in the micromagnetic calculations. A multiscale model is proposed based an atomic level simulation in the interface region coupled with a micromagnetic approach elsewhere. This leads to improved calculations of DW structures at the interface, allowing a detailed study of the magnetization reversal mechanism. The new approach predicts a saturation in the coercivity reduction as a function of interface exchange energy at 4% of the bulk value, which is associated with complete continuity of the DW across the interface.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.30.Et Exchange and superexchange interactions
75.70.Kw Domain structure (including magnetic bubbles and vortices)
75.60.Ch Domain walls and domain structure
75.60.Jk Magnetization reversal mechanisms

Enhanced flux pinning in YBa2Cu3O7−δ films by nanoscaled substrate surface roughness

Zu-Xin Ye, Qiang Li, Y. Hu, W. D. Si, P. D. Johnson, and Y. Zhu

Appl. Phys. Lett. 87, 122502 (2005); http://dx.doi.org/10.1063/1.2051794 (3 pages) | Cited 6 times

Online Publication Date: 12 September 2005

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Nanoscaled substrate surface roughness is shown to strongly influence the critical current density (Jc) in YBa2Cu3O7−δ (YBCO) films made by pulsed-laser deposition on the crystalline LaAlO3 substrates consisting of two separate twin-free and twin-rich regions. The nanoscaled corrugated substrate surface was created in the twin-rich region during the deposition process. Using magneto-optical imaging techniques coupled with optical and atomic force microscopy, we observed an enhanced flux pinning in the YBCO films in the twin-rich region, resulting in a ∼ 30% increase in Jc, which was unambiguously confirmed by the direct transport measurement.
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74.78.-w Superconducting films and low-dimensional structures
74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
74.25.Sv Critical currents

Bias-controlled hole degeneracy and implications for quantifying spin polarization

G. Kioseoglou, A. T. Hanbicki, B. T. Jonker, and A. Petrou

Appl. Phys. Lett. 87, 122503 (2005); http://dx.doi.org/10.1063/1.2051790 (3 pages) | Cited 4 times

Online Publication Date: 13 September 2005

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We report on a spin injection study from an Fe Schottky tunnel contact into n‐AlGaAs/GaAs/p‐AlGaAs light-emitting diodes with a bulk-like GaAs recombination region. The spectral composition and circular polarization of the electroluminescence allowed us to monitor changes in the band structure induced by the applied bias voltage. At low bias conditions, the holes are confined at the GaAs/p‐AlGaAs interface and have two-dimensional (2D) character with nondegenerate heavy- and light-hole subbands. Increasing the bias voltage moves the structure towards a flatband condition, making the holes three-dimensional (3D)-like. The results are discussed in terms of the quantum selection rules describing radiative recombination in 2D and 3D systems.
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72.25.Dc Spin polarized transport in semiconductors
73.20.At Surface states, band structure, electron density of states
73.30.+y Surface double layers, Schottky barriers, and work functions
78.60.Fi Electroluminescence

[Bi3Fe5O12/Gd3Ga5O12]m magneto-optical photonic crystals

S. I. Khartsev and A. M. Grishin

Appl. Phys. Lett. 87, 122504 (2005); http://dx.doi.org/10.1063/1.2053359 (3 pages) | Cited 26 times

Online Publication Date: 16 September 2005

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A series of one-dimensional heteroepitaxial all-garnet magneto-optical photonic crystals has been synthesized and optically characterized. They are composed of alternating magneto-optically active Bi3Fe5O12 (BIG) and Gd3Ga5O12 (GGG) quarter-wave length layers pulsed laser deposited on to the GGG(001) substrate. Photonic crystals, as designed, exhibit stop band structure and the band gap with the transmittance central peak caused by the light localization in the half-wave length BIG cavity. Compared to previously reported [Bi3Fe5O12/Y3Fe5O12]m photonic crystal [ Appl. Phys. Lett. 84, 1438 (2004) ], the replacement of optically dense Y3Fe5O12 garnet by transparent Gd3Ga5O12 enables significant enhancement of light rejection within the stop band. Photonic crystals spectra experience “blue” shift in oblique incidence geometry thus demonstrating feasibility to use this effect for tunable magneto-optical filters.
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42.70.Qs Photonic bandgap materials
75.50.Gg Ferrimagnetics
78.20.Ls Magneto-optical effects
78.40.Ha Other nonmetallic inorganics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
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