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3 Oct 2005

Volume 87, Issue 14, Articles (14xxxx)

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Appl. Phys. Lett. 87, 143902 (2005); http://dx.doi.org/10.1063/1.2077839 (3 pages)

Kaustubh D. Bhalerao, Edward Eteshola, Matthew Keener, and Stephen C. Lee
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High-power SiO2/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors

P. Kordoš, G. Heidelberger, J. Bernát, A. Fox, M. Marso, and H. Lüth

Appl. Phys. Lett. 87, 143501 (2005); http://dx.doi.org/10.1063/1.2058206 (3 pages) | Cited 30 times

Online Publication Date: 26 September 2005

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We report on SiO2/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs), which exhibit a 6.7 W/mm power density at 7 GHz. Unpassivated and SiO2-passivated heterostructure field-effect transistors (HFETs) were also investigated for comparison. Deposited 12 nm thick SiO2 yielded an increase of the sheet carrier density from 7.6×1012 to 9.2×1012 cm−2 and a subsequent increase of the static drain saturation current from 0.75 to 1.09 A/mm. The small-signal rf characterization of the MOSHFETs showed an extrinsic current gain cutoff frequency fT of 24 GHz and a maximum frequency of oscillation fmax of 40 GHz. The output power of 6.7 W/mm of the MOSHFETs measured at 7 GHz is about two times larger than that of HFETs. The results obtained demonstrate the suitability of GaN-based MOSHFETs for high-power electronics.
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85.30.Tv Field effect devices

Polymer bulk homojunction photonic devices

Corey Tracy and Jun Gao

Appl. Phys. Lett. 87, 143502 (2005); http://dx.doi.org/10.1063/1.2077852 (3 pages) | Cited 7 times

Online Publication Date: 27 September 2005

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We demonstrate polymer photonic devices based on the formation of multiple p-n junctions within the bulk of the active polymer film. By simple mixing of metallic particles into an electrolyte/electroluminescent composite polymer film, thousands of tiny light-emitting p-n junctions are formed in situ by electrochemical p- and n-doping. This bulk homojunction device exhibits a large active light-emitting area, as well as a giant open-circuit voltage of 25.5 V, when operated as a photovoltaic cell. All devices are constructed in an extremely large planar configuration that can be directly imaged with a digital camera.
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85.60.Jb Light-emitting devices
82.45.Gj Electrolytes
61.72.up Other materials
85.60.-q Optoelectronic devices

Influence of indium tin oxide electrodes deposited at room temperature on the properties of organic light-emitting devices

Toshikazu Satoh, Hisayoshi Fujikawa, and Yasunori Taga

Appl. Phys. Lett. 87, 143503 (2005); http://dx.doi.org/10.1063/1.2077835 (3 pages) | Cited 6 times

Online Publication Date: 27 September 2005

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The influence of indium tin oxide (ITO) electrodes deposited at room temperature (ITO-RT) on the properties of organic light-emitting devices (OLEDs) has been studied. The OLED on the ITO-RT showed an obvious shorter lifetime and higher operating voltage than that on the conventional ITO electrode deposited at 573 K. The result of an in situ x-ray photoelectron spectroscopy analysis of the ITO electrode and the organic layer suggested that many of the hydroxyl groups that originate in the amorphous structure of the ITO-RT electrode oxidize the organic layer. The performance of the OLED on the ITO-RT is able to be explained by the oxidation of the organic layer.
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85.60.Jb Light-emitting devices
79.60.-i Photoemission and photoelectron spectra
81.15.Cd Deposition by sputtering

Mobility enhancement of polycrystalline-Si thin-film transistors using nanowire channels by pattern-dependent metal-induced lateral crystallization

Yung-Chun Wu, Ting-Chang Chang, Po-Tsun Liu, Yuan-Chun Wu, Cheng-Wei Chou, Chun-Hao Tu, Jen-Chung Lou, and Chun-Yen Chang

Appl. Phys. Lett. 87, 143504 (2005); http://dx.doi.org/10.1063/1.2076436 (3 pages) | Cited 8 times

Online Publication Date: 28 September 2005

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This work presents a method for enhancing the mobility of polycrystalline-Si (poly-Si) thin-film transistors (TFTs) by pattern-dependent metal-induced-lateral-crystallization (PDMILC) using nanowire channels. Experimental results indicate that the field-effect mobility of PDMILC TFT was enhanced as the channel width decreased, because the lateral length of the poly-Si grains increased. The PDMILC poly-Si TFT with ten nanowire channels (M10) had the greatest field-effect mobility, 109.34 cm2/V s and the lowest subthreshold swing, 0.23 V/dec, at a gate length of 2 μm. The field-effect mobility also increased as the gate length in the M10 PDMILC poly-Si TFT device declined, because the number of poly-Si grain-boundary defects was reduced.
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85.30.Tv Field effect devices

Varistors made of indium tin oxide/Si multilayers on p-type GaN substrates

S. Y. Yang, P. P. Su, Y. C. Chiu, Chin-Yih Hong, H. C. Yang, W. H. Liu, and B. J. Lee

Appl. Phys. Lett. 87, 143505 (2005); http://dx.doi.org/10.1063/1.2081119 (3 pages)

Online Publication Date: 28 September 2005

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Varistors are important devices in the prevention of electric circuits from electric surges or in the stabilization of the operation current. Instead of the conventional granular type, varistors consisting of conductor/semiconductor multilayers grown on p-type semiconductor substrates are developed. In this work, the conductor used is indium tin oxide (ITO), the semiconductor is Si and the substrate is of p-type GaN. It was found that symmetric and nonlinear current-voltage curves are available by cascading two (ITO/Si)N/p-GaN films with a bridging Ag film. Furthermore, the current-voltage characteristics can be manipulated by depositing various periods of ITO/Si multilayers on the p-type GaN substrates. The details of the design principle and the characterizations of the cascading (ITO/Si)N/p-GaN thin-film varistors are also discussed.
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85.30.-z Semiconductor devices

Fabrication of C60 field-effect transistors with polyimide and Ba0.4Sr0.6Ti0.96O3 gate insulators

Yoshihiro Kubozono, Takayuki Nagano, Yusuke Haruyama, Eiji Kuwahara, Toshio Takayanagi, Kenji Ochi, and Akihiko Fujiwara

Appl. Phys. Lett. 87, 143506 (2005); http://dx.doi.org/10.1063/1.2081134 (3 pages) | Cited 17 times

Online Publication Date: 29 September 2005

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A flexible C60 field-effect transistor (FET) device has been fabricated with a polyimide gate insulator on the poly(ethylene terephthalate) substrate, and n-channel normally off FET properties are observed in this FET device. The field-effect mobility, μ, is estimated to be ∼ 10−2 cm2 V−1 s−1 at 300 K. Furthermore, the C60 FET has been fabricated with a high-dielectric Ba0.4Sr0.6Ti0.96O3 (BST) gate insulator, showing n-channel properties; the μ value is estimated to be ∼ 10−4 cm2 V−1 s−1 at 300 K. The FET device operates at very low gate voltage, VG, and low drain-source voltage, VDS. Thus these C60 FET devices possess flexibility and low-voltage operation characteristic of polyimide and BST gate insulators, respectively.
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85.65.+h Molecular electronic devices

High-contrast top-emitting organic light-emitting devices for active-matrix displays

Chih-Jen Yang, Chun-Liang Lin, Chung-Chih Wu, Yung-Hui Yeh, Chun-Cheng Cheng, Yen-Hsun Kuo, and Tai-Hong Chen

Appl. Phys. Lett. 87, 143507 (2005); http://dx.doi.org/10.1063/1.2081137 (3 pages) | Cited 30 times

Online Publication Date: 29 September 2005

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Unlike previous high-contrast devices that all involve inserting extra layer(s) with optical purposes (e.g., absorption and interference) into the active region of devices, in this-letter we report a high-contrast top-emitting organic light-emitting device (OLED) that utilizes only optical characteristics of electrodes and anti-reflection coatings deposited outside the active region, thus reducing the complexity of devices. Furthermore, the device has an inherent microcavity which is beneficial to electroluminescence efficiency. The devices are readily compatible with the processing of active-matrix backplanes, and active-matrix OLED displays incorporating such high-contrast top-emitting devices were demonstrated to have improved readability under a strong lighting environment.
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85.60.Jb Light-emitting devices
42.79.Kr Display devices, liquid-crystal devices

ZnO extended-gate field-effect transistors as pH sensors

P. D. Batista and M. Mulato

Appl. Phys. Lett. 87, 143508 (2005); http://dx.doi.org/10.1063/1.2084319 (3 pages) | Cited 28 times

Online Publication Date: 29 September 2005

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The objective of this work is the study and characterization of zinc oxide (ZnO) as pH sensor. We used an extended-gate field-effect transistor (EGFET) to obtain the response of ZnO as a function of pH. Sol-gel was used for the production of ZnO films because this is a low cost and easy fabrication procedure. The ZnO powder was obtained at different temperatures of calcination, from 150 up to 500 ° C. The samples were investigated by x-ray diffraction, infrared spectroscopy, thermogravimetric analysis and differential thermal analysis. The films were investigated as pH sensors (range 2–12) and the ZnO EGFET shows a sensitivity of 38 mV/pH.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.30.Tv Field effect devices
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