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3 Oct 2005

Volume 87, Issue 14, Articles (14xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 87, 143902 (2005); http://dx.doi.org/10.1063/1.2077839 (3 pages)

Kaustubh D. Bhalerao, Edward Eteshola, Matthew Keener, and Stephen C. Lee
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Effect of AlN interlayers on growth stress in GaN layers deposited on (111) Si

Srinivasan Raghavan, Xiaojun Weng, Elizabeth Dickey, and Joan M. Redwing

Appl. Phys. Lett. 87, 142101 (2005); http://dx.doi.org/10.1063/1.2081128 (3 pages) | Cited 15 times

Online Publication Date: 26 September 2005

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Thin ( ∼ 10 nm) AlN interlayers have previously been used to mitigate stress and cracking in GaN epitaxial layers grown on Si substrates. However, multiple AlN interlayers are typically required for the growth of thick (>1 μm) GaN as the initial compressive mismatch stress introduced by the AlN interlayer transitions to a tensile stress within 0.5 μm. To better understand the reasons for the transition, in situ monitoring and transmission electron microscopy have been used to study stress and structural evolution in undoped GaN layers deposited on high temperature (1050–1100 °C) AlN interlayers by metal-organic chemical-vapor deposition. The results show that transition of the initial compressive stress to a final tensile stress is associated with a reduction in the density of dislocations introduced either by the pseudosubstrate or the interlayer itself.
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81.05.Ea III-V semiconductors
68.60.Bs Mechanical and acoustical properties
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.M- Structural failure of materials
68.55.A- Nucleation and growth
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.37.Lp Transmission electron microscopy (TEM)
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.Lk Linear defects: dislocations, disclinations

Preamorphization implantation-assisted boron activation in bulk germanium and germanium-on-insulator

Y.-L. Chao, S. Prussin, J. C. S. Woo, and R. Scholz

Appl. Phys. Lett. 87, 142102 (2005); http://dx.doi.org/10.1063/1.2076440 (3 pages) | Cited 23 times

Online Publication Date: 27 September 2005

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The effect of preamorphization implantation (PAI) on boron activation in germanium was studied. It was found that following PAI, significant dynamic annealing occurred during boron implantation in germanium. For small PAI energy which leads to a thin amorphous layer, recrystallization is completed via dynamic annealing during the boron implantation. As a result, a high-temperature postimplant anneal is required to activate the remaining interstitial boron and to annihilate implantation defects. For high PAI energy, while the thick amorphous layer did not recrystallize during the dynamic annealing, it requires a high-temperature anneal in order to completely recrystallize by solid phase epitaxial regrowth (SPER). The optimized PAI energy needs to be tailored such that the surface amorphous layer not only survives dynamic annealing during boron implantation, but also completes the SPER within the designed thermal budget. Full activation of boron can then be achieved without being limited by its solid solubility in germanium. An electrically active boron concentration as high as 4.7×1020/cm3 was obtained after 400 °C rapid thermal annealing. PAI causes a similar effect in GeOI substrates.
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61.72.uf Ge and Si
61.43.Dq Amorphous semiconductors, metals, and alloys
81.05.Cy Elemental semiconductors
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
64.75.-g Phase equilibria
61.72.Cc Kinetics of defect formation and annealing

Modulation of the high mobility two-dimensional electrons in Si/SiGe using atomic-layer-deposited gate dielectric

K. Lai, P. D. Ye, W. Pan, D. C. Tsui, S. A. Lyon, M. Mühlberger, and F. Schäffler

Appl. Phys. Lett. 87, 142103 (2005); http://dx.doi.org/10.1063/1.2076439 (3 pages) | Cited 6 times

Online Publication Date: 28 September 2005

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Metal-oxide-semiconductor field-effect-transistors using atomic-layer-deposited (ALD) Al2O3 as the gate dielectric are fabricated on the Si/Si1−xGex heterostructures. The low-temperature carrier density of a two-dimensional electron system (2DES) in the strained Si quantum well can be controllably tuned from 2.5×1011 to 4.5×1011 cm−2, virtually without any gate leakage current. Magnetotransport data show the homogeneous depletion of 2DES under gate biases. The characteristic of vertical modulation using ALD dielectric is shown to be better than that using Schottky barrier or the SiO2 dielectric formed by plasma-enhanced chemical-vapor-deposition.
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85.30.Tv Field effect devices
77.55.-g Dielectric thin films
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Mapping of trap densities and energy levels in semiconductors using a lock-in infrared camera technique

Peter Pohl, Jan Schmidt, Karsten Bothe, and Rolf Brendel

Appl. Phys. Lett. 87, 142104 (2005); http://dx.doi.org/10.1063/1.2077833 (3 pages) | Cited 12 times

Online Publication Date: 28 September 2005

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We examine nonrecombination active minority-carrier trapping centers in crystalline silicon using a lock-in infrared camera technique. Application of a simple trapping model to the injection-dependent lifetime data obtained from the infrared emission signal results in high-resolution mappings (spatial resolution = 170 μm) of the trap density and the energy level. Measurements on Czochralski-grown silicon wafers show striation-related inhomogeneities of the trap density and a very homogeneous distribution of energy levels.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
71.20.Mq Elemental semiconductors
71.55.Cn Elemental semiconductors
76.30.Mi Color centers and other defects

Drift mobility in 4H-SiC Schottky diodes

F. La Via, G. Galvagno, F. Roccaforte, A. Ruggiero, and L. Calcagno

Appl. Phys. Lett. 87, 142105 (2005); http://dx.doi.org/10.1063/1.2081126 (3 pages) | Cited 8 times

Online Publication Date: 29 September 2005

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In this work, the temperature dependence of the mobility along the c axis in 4H-SiC was determined from the current voltage (I‐V) characteristics of Schottky diodes in the temperature range 80–700 K. The procedure used series resistance measurements in Schottky diodes for extracting the mobility values in the epitaxial layer. For a dopant concentration of 1.2×1016 cm−3, at room temperature, a mobility value of 724 cm2/(V s) was found, which decreased to 48.6 cm2/(V s) at 700 K. In the temperature range 200–700 K, a dependence of the mobility as T−3 was determined.
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85.30.Kk Junction diodes
61.72.up Other materials

Ultraviolet lasing from optically pumped BeMgZnSe quantum-well laser structures

Yuuki Niiyama, Tomoyuki Murata, and Masahiro Watanabe

Appl. Phys. Lett. 87, 142106 (2005); http://dx.doi.org/10.1063/1.2081121 (3 pages)

Online Publication Date: 30 September 2005

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We achieved lasing of an optically pumped ultraviolet BeMgZnSe-based quantum-well laser grown closely lattice matched to a GaP substrate. A laser emission wavelength of 373 nm at 13 K was observed. The threshold excitation power density was 0.415 MW/cm2 at 13 K. In addition, we have demonstrated lasing up to 130 K. This indicates that the BeMgZnSe compound is promising as a new candidate for ultraviolet (UV) laser diodes, which possess potential application for UV optoelectronic integrated circuits UV-OEICs on silicon substrates.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.60.-q Optoelectronic devices
42.82.-m Integrated optics

Quantum dot emitters in two-dimensional photonic crystals of macroporous silicon

Stefan Richter, Martin Steinhart, Herbert Hofmeister, Margit Zacharias, Ulrich Gösele, Nikolai Gaponik, Alexander Eychmüller, Andrey L. Rogach, Joachim H. Wendorff, Stefan L. Schweizer, Andreas von Rhein, and Ralf B. Wehrspohn

Appl. Phys. Lett. 87, 142107 (2005); http://dx.doi.org/10.1063/1.2081123 (3 pages) | Cited 9 times

Online Publication Date: 30 September 2005

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We report on the incorporation of semiconductor quantum dots as internal emitters into two-dimensional photonic crystals of macroporous silicon. For this purpose we prepared composite nanotubes within the pores consisting of quantum dots embedded in a polymeric matrix. A spectral modification of the emission by the surrounding photonic crystal is demonstrated for mercury telluride quantum dots when the emission coincides with the photonic band gap of the Si photonic crystal.
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42.70.Qs Photonic bandgap materials
78.67.Hc Quantum dots
78.55.Ap Elemental semiconductors
78.55.Et II-VI semiconductors
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