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3 Oct 2005

Volume 87, Issue 14, Articles (14xxxx)

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Appl. Phys. Lett. 87, 143902 (2005); http://dx.doi.org/10.1063/1.2077839 (3 pages)

Kaustubh D. Bhalerao, Edward Eteshola, Matthew Keener, and Stephen C. Lee
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Microcavity plasma photodetectors: Photosensitivity, dynamic range, and the plasma-semiconductor interface

N. P. Ostrom and J. G. Eden

Appl. Phys. Lett. 87, 141101 (2005); http://dx.doi.org/10.1063/1.2072767 (3 pages) | Cited 8 times

Online Publication Date: 26 September 2005

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Detailed measurements of the photosensitivity of Si microcavity plasma photodetectors in the visible and near-infrared (420–1100 nm) are reported for input optical intensities to a 100×100 μm2 inverted pyramid device varied over three orders of magnitude (10−5–10−2 W cm−2). By resolving the contribution to the overall device response from the plasma/semiconductor interaction, as opposed to bulk Si photoconductivity, the photosensitivity of the plasma photodetector operating in 500 Torr of Ne was determined to range from (2.2±0.4) A/W for 2 nW of input power (at λ = 780 nm) to (1.3±0.2) A/W at ∼ 0.65 μW. The spectral response profile of the hybrid plasma/semiconductor detector is similar to that of a conventional pn junction photodiode, but is blueshifted by ∼ 60 nm. Also, the peak photosensitivity (3.5 A/W at λ ≃ 900 nm) of a Si microplasma device having a 50×50 μm2 aperture is approximately twice that for its larger (100×100 μm2) counterpart under identical conditions. Analysis of the data suggest that bandbending at the p-Si surface is sufficiently strong for a thin n-type region to form, thereby resembling a metal-oxide-semiconductor capacitor in the inversion mode. Electrons in this thin layer tunnel through the vacuum (Si-plasma) barrier, followed by electron avalanche in the nonequilibrium plasma. These results illustrate the potential for novel optoelectronic devices when interfacing a plasma with a semiconductor and coupling the two media with a strong electric field imposed across the interface.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Dw Photodiodes; phototransistors; photoresistors

Effect of doping concentration on the performance of terahertz quantum-cascade lasers

H. C. Liu, M. Wächter, D. Ban, Z. R. Wasilewski, M. Buchanan, G. C. Aers, J. C. Cao, S. L. Feng, B. S. Williams, and Q. Hu

Appl. Phys. Lett. 87, 141102 (2005); http://dx.doi.org/10.1063/1.2067699 (3 pages) | Cited 35 times

Online Publication Date: 26 September 2005

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We characterized a set of terahertz quantum-cascade lasers with identical device parameters except for the doping concentration. The δ-doping density was varied from 3.2×1010 to 4.8×1010 cm−2. We observed that the threshold current density increased monotonically with doping. Moreover, the measured results on devices with different cavity lengths provided evidence that the free carrier absorption caused waveguide loss also increased monotonically. Interestingly, however, the observed maximum lasing temperature displayed an optimum at a doping density of 3.6×1010 cm−2.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
61.72.S- Impurities in crystals

Resonant-cavity-enhanced photodetectors for the mid-infrared

Martin Arnold, Dmitry Zimin, and Hans Zogg

Appl. Phys. Lett. 87, 141103 (2005); http://dx.doi.org/10.1063/1.2061855 (3 pages) | Cited 13 times

Online Publication Date: 27 September 2005

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High-efficiency resonant-cavity-enhanced photodetectors for the mid-wavelength infrared range have been realized. Spectral linewidths as narrow as 0.07 μm at 4.13 μm and 0.24 μm at 8.41 μm center wavelength, respectively, have been achieved. Peak quantum efficiencies are up to above 50%. The photovoltaic devices are based on IV-VI semiconductor layers grown epitaxially on Si substrates and employing a distributed Bragg mirror to form the cavity.
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85.60.Gz Photodetectors (including infrared and CCD detectors)

Influence of microdefects on the polarization properties of polymeric optical waveguides studied by polarized near-field scanning optical microscopy

Tadashi Mitsui

Appl. Phys. Lett. 87, 141104 (2005); http://dx.doi.org/10.1063/1.2084326 (3 pages)

Online Publication Date: 27 September 2005

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In the present study, the polarization properties of propagation light within a polymeric optical waveguide were characterized by means of a polarized guide-collection-mode near-field scanning optical microscopy (NSOM) technique, and changes in the polarization properties around an indentation were evaluated. When transverse magnetic polarized light enters a waveguide, the light intensity becomes greater on the near side of the indentation than on the far side, as measured by a linearly polarized component perpendicular to the direction of light propagation. The most probable cause of this phenomenon is microdefects generated by the printing of the indentation. The polarized NSOM technique is useful in searching for small defects or stresses within integrated photonic devices.
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42.79.Gn Optical waveguides and couplers
42.70.Jk Polymers and organics
07.79.Fc Near-field scanning optical microscopes
42.82.Et Waveguides, couplers, and arrays
62.20.M- Structural failure of materials
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure

Scanning a photonic crystal slab nanocavity by condensation of xenon

S. Mosor, J. Hendrickson, B. C. Richards, J. Sweet, G. Khitrova, H. M. Gibbs, T. Yoshie, A. Scherer, O. B. Shchekin, and D. G. Deppe

Appl. Phys. Lett. 87, 141105 (2005); http://dx.doi.org/10.1063/1.2076435 (3 pages) | Cited 59 times

Online Publication Date: 28 September 2005

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Allowing xenon or nitrogen gas to condense onto a photonic crystal slab nanocavity maintained at 10–20 K results in shifts of the nanocavity mode wavelength by as much as 5 nm ( ≅ 4 meV). This occurs in spite of the fact that the mode defect is achieved by omitting three holes to form the spacer. This technique should be useful in changing the detuning between a single quantum dot transition and the nanocavity mode for cavity quantum electrodynamics experiments, such as mapping out a strong coupling anticrossing curve. Compared with temperature scanning, it has a much larger scan range and avoids phonon broadening.
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42.50.Pq Cavity quantum electrodynamics; micromasers
42.55.Tv Photonic crystal lasers and coherent effects

F2-laser digital etching of colloidal photonic crystals

J. Li, P. R. Herman, V. Kitaev, S. Wong, and G. A. Ozin

Appl. Phys. Lett. 87, 141106 (2005); http://dx.doi.org/10.1063/1.2077857 (3 pages) | Cited 4 times

Online Publication Date: 28 September 2005

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We report on digital etching of silica colloidal photonic crystals by employing a pulsed deep-ultraviolet F2 laser at 157 nm wavelength. When the laser fluence is above a microsphere-size-dependent threshold and within an appropriate fluence window, colloidal crystals can be etched in a digitized fashion, whereby a single microsphere layer can be removed upon exposure to a single laser pulse. Alternatively, single spheres or lines of spheres can be selectively ejected by patterning the laser beam. The results demonstrate a fast, noncontact, straightforward, and cost-effective approach for engineering extrinsic defects into colloidal photonic crystals.
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42.70.Qs Photonic bandgap materials
81.65.Cf Surface cleaning, etching, patterning
82.70.Dd Colloids
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

InGaAs–AlInAs/InP terahertz quantum cascade laser

Lassaad Ajili, Giacomo Scalari, Nicolas Hoyler, Marcella Giovannini, and Jérôme Faist

Appl. Phys. Lett. 87, 141107 (2005); http://dx.doi.org/10.1063/1.2081122 (3 pages) | Cited 13 times

Online Publication Date: 28 September 2005

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Operation of a quantum-cascade laser based on the In0.52Al0.48As–In0.53Ga0.47As/InP material is demonstrated at a frequency of 3.6 terahertz. The active region is based on a bound-to-continuum transition combined with an optical phonon extraction. The optical waveguide exploits a combination of metallic and dielectric confinement. Threshold current density of 460 A/cm2 at 10 K and a maximum operating temperature of 45 K are achieved.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.79.Gn Optical waveguides and couplers

Model for two-beam coupling during the formation of holographic gratings with a nematic film-polymer-slice sequence structure

Roberto Caputo, Luciano De Sio, Alessandro Veltri, Cesare Umeton, and Andrey V. Sukhov

Appl. Phys. Lett. 87, 141108 (2005); http://dx.doi.org/10.1063/1.2048821 (3 pages) | Cited 3 times

Online Publication Date: 28 September 2005

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We present a model accounting for the main features of the wave coupling process that takes place during the UV curing of diffraction gratings made of liquid crystal films separated by slices of polymeric material. The effect depends on the phase shift between the curing interference pattern and the grating being cured. For a unit ratio of the impinging beam intensities, the model confirms the absence of energy transfer, as experimentally observed. When the ratio is not at its unit value, the beam coupling tends to equalize the intensities of the two beams as they propagate inside the sample.
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42.40.Eq Holographic optical elements; holographic gratings
42.79.Dj Gratings
42.70.Df Liquid crystals
42.70.Jk Polymers and organics
61.30.-v Liquid crystals

Design and simulation of InGaAs/AlAsSb quantum-cascade lasers for short wavelength emission

C. A. Evans, V. D. Jovanović, D. Indjin, Z. Ikonić, and P. Harrison

Appl. Phys. Lett. 87, 141109 (2005); http://dx.doi.org/10.1063/1.2067701 (3 pages) | Cited 4 times

Online Publication Date: 28 September 2005

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The design and simulation of an In0.53Ga0.47As/Al0.56As0.44Sb quantum-cascade laser emitting in the near infrared is presented. Designed using a self-consistent rate equation solver coupled with an energy balance rate equation, the proposed laser has a calculated population inversion of ∼ 20% at 77 K and sufficient gain to achieve room-temperature laser emission at λ ∼ 2.8 μm. Threshold currents in the range 4–8 kA/cm2 are estimated as the temperature increases from 77 K to 300 K. The output characteristics of the proposed laser are compared to an existing λ ∼ 3.1 μm In0.53Ga0.47As/Al0.56As0.44Sb quantum-cascade structure presented in the literature.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

45° polymer-based total internal reflection coupling mirrors for fully embedded intraboard guided wave optical interconnects

Li Wang, Xiaolong Wang, Wei Jiang, Jinho Choi, Hai Bi, and Ray Chen

Appl. Phys. Lett. 87, 141110 (2005); http://dx.doi.org/10.1063/1.2084331 (3 pages) | Cited 17 times

Online Publication Date: 30 September 2005

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An array of 50 μm×50 μm polymer waveguides with 45° total internal reflection (TIR) wideband coupling mirrors were fabricated by soft molding to achieve fully embedded boardlevel optoelectronic interconnects. The 45° TIR coupling mirrors were formed at the ends of the waveguides to provide surface normal light coupling between waveguides and optoelectronic devices. Three-dimensional optoelectronic interconnects were replicated in one-step transfer by the soft molding technique. The measured propagation loss of the multimode waveguide was 0.16 dB/cm at 850 nm wavelength. The coupling efficiency of the silver-coated 45° micromirrors buried under the top cladding was 92% with low polarization sensitivity.
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42.82.Ds Interconnects, including holographic interconnects
42.82.Et Waveguides, couplers, and arrays
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.79.Gn Optical waveguides and couplers
42.70.Jk Polymers and organics
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
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