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3 Oct 2005

Volume 87, Issue 14, Articles (14xxxx)

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Appl. Phys. Lett. 87, 143902 (2005); http://dx.doi.org/10.1063/1.2077839 (3 pages)

Kaustubh D. Bhalerao, Edward Eteshola, Matthew Keener, and Stephen C. Lee
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Synthesis and characterization of quasi-aligned ZnCdO nanorods

F. Z. Wang, Z. Z. Ye, D. W. Ma, L. P. Zhu, F. Zhuge, and H. P. He

Appl. Phys. Lett. 87, 143101 (2005); http://dx.doi.org/10.1063/1.2076434 (3 pages) | Cited 11 times

Online Publication Date: 26 September 2005

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Quasi-aligned ZnCdO single-crystal nanorods were prepared for the first time by using thermal evaporation of Zn and CdCl2 on a Si substrate with the presence of Au catalyst. The maximum Cd content was up to about 16.7 at. %, which was significantly larger than the thermodynamic solid solubility limits. The ZnCdO nanorods have uniform flat hexagonal crystallographic planes with diameters of about 150 nm. Notably, with the Cd content increasing, the ultraviolet near-band-edge emission was redshifted to 407 nm (3.04 eV) from 386 nm (3.21 eV). The direct modulation of the band gap caused by Cd substitution is responsible for the redshift. The possible growth mechanism of the ZnCdO nanorods was discussed.
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81.10.Bk Growth from vapor
81.05.Dz II-VI semiconductors
78.55.Et II-VI semiconductors
61.46.-w Structure of nanoscale materials
64.75.-g Phase equilibria
71.20.Nr Semiconductor compounds

Synthesis and ferroelectric properties of multiferroic BiFeO3 nanotube arrays

X. Y. Zhang, C. W. Lai, X. Zhao, D. Y. Wang, and J. Y. Dai

Appl. Phys. Lett. 87, 143102 (2005); http://dx.doi.org/10.1063/1.2076437 (3 pages) | Cited 48 times

Online Publication Date: 26 September 2005

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We report the synthesis and characterization of ordered multiferroic BiFeO3 (BFO) nanotube arrays. BFO nanotubes with diameters of about 250 nm and lengths of about 6 μm were fabricated by means of a sol-gel method utilizing nanochannel alumina templates. After postannealing at 700 °C, the BFO nanotubes exhibited a polycrystalline microstructure, and x-ray diffraction and transmission electron microscopy study revealed that they are of a perovskite crystal structure. Significant ferroelectric and piezoelectric characteristics of BFO nanotubes have been demonstrated by means of piezoresponse force microscopy measurement.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
81.07.De Nanotubes
77.65.-j Piezoelectricity and electromechanical effects
77.80.-e Ferroelectricity and antiferroelectricity
61.46.-w Structure of nanoscale materials
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
81.40.Gh Other heat and thermomechanical treatments

Patterning of nanostructured thin films by structured light illumination

E. Haro-Poniatowski, E. Fort, J. P. Lacharme, and C. Ricolleau

Appl. Phys. Lett. 87, 143103 (2005); http://dx.doi.org/10.1063/1.2061857 (3 pages) | Cited 13 times

Online Publication Date: 26 September 2005

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Light-induced reshaping of silver nanostructured films near the percolation threshold are investigated using a KrF excimer laser emitting at 248 nm. Depending on the laser intensity and the number of pulses, striking effects are observed for which the irregular particles melt and transform into spherical shaped particles. We show that the laser-induced modifications can be spatially designed by irradiating through masks and gratings taking advantage of their respective diffractive properties. This permits an easy and well controlled way to produce a variety of submicron patterning. The induced patterns accurately coincide with the intensity variations of the illumination field.
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81.16.Rf Micro- and nanoscale pattern formation
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
42.62.-b Laser applications

Electric-field-aligned vertical growth and field emission properties of In2O3 nanowires

S. Q. Li, Y. X. Liang, and T. H. Wang

Appl. Phys. Lett. 87, 143104 (2005); http://dx.doi.org/10.1063/1.2076438 (3 pages) | Cited 18 times

Online Publication Date: 27 September 2005

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Vertically aligned In2O3 nanowires are grown on InAs substrates by an electric field in the plasma sheath. The In2O3 nanowires are single crystalline with diameters less than 10 nm. Field emission results show that the aligned In2O3 nanowires have lower turn-on and threshold electric fields than nonaligned ones. This is discussed in terms of orientation, emitter shapes, and density of the In2O3 nanowires.
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79.70.+q Field emission, ionization, evaporation, and desorption
61.46.-w Structure of nanoscale materials
81.10.Bk Growth from vapor

Evidence of an enhanced interband absorption in Au nanoparticles: Size-dependent electronic structure and optical properties

B. Balamurugan and Toshiro Maruyama

Appl. Phys. Lett. 87, 143105 (2005); http://dx.doi.org/10.1063/1.2077834 (3 pages) | Cited 36 times

Online Publication Date: 27 September 2005

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The present study reports clear evidence and physical significance of an interband transition due to the transition from the d band to an empty state in the conduction band in the optical absorption spectra of Au nanoparticles. The optical absorption due to interband transitions has been observed to dominate the plasmon absorption on decreasing the particle size. X-ray photoelectron spectroscopy and optical absorption studies reveal the metallic nature even for smaller sizes of 2.5 nm.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
61.46.-w Structure of nanoscale materials
73.22.-f Electronic structure of nanoscale materials and related systems
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
79.60.Jv Interfaces; heterostructures; nanostructures

Atomic structure of epitaxial SrTiO3–GaAs(001) heterojunctions

R. F. Klie, Y. Zhu, E. I. Altman, and Y. Liang

Appl. Phys. Lett. 87, 143106 (2005); http://dx.doi.org/10.1063/1.2077837 (3 pages) | Cited 13 times

Online Publication Date: 28 September 2005

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We have examined the atomic and electronic structures of epitaxial SrTiO3 thin films on GaAs (001) deposited under different growth conditions in order to understand the interfacial structure-property relationships. High-resolution Z-contrast images show an atomically sharp heterointerface with SrTiO3[110] in perfect registry with GaAs [100] and the interfacial structure remains unchanged if a submonolayer of Ti was deposited prior to the SrTiO3 film growth. X-ray photoelectron spectroscopy shows that the Fermi level was pinned during the initial stage of growth when a submonolayer of Ti was deposited on As-terminated GaAs(001); subsequent SrTiO3 growth alleviated this pinning. These results indicate a self-driven interfacial atomic structure formation, independent of the initial stage of growth.
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71.20.Ps Other inorganic compounds
68.35.Ct Interface structure and roughness
68.55.A- Nucleation and growth
79.60.Jv Interfaces; heterostructures; nanostructures

Field emission from high aspect ratio tubular carbon cones grown on gold wire

J. J. Li, C. Z. Gu, Q. Wang, P. Xu, Z. L. Wang, Z. Xu, and X. D. Bai

Appl. Phys. Lett. 87, 143107 (2005); http://dx.doi.org/10.1063/1.2081127 (3 pages) | Cited 17 times

Online Publication Date: 29 September 2005

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Tubular carbon cones (TCCs) with nanometer-sized tips and micrometer-sized roots, having a herringbone hollow interior surrounded by helical sheets of graphite coiling around, were grown on Au wires by hot filament chemical vapor deposition (HFCVD). These TCCs exhibit excellent field emission properties with a very low threshold field of 0.27 V/μm and a corresponding current density of about 1 μA/cm2; and a stable emitting current density of 1.9 mA/cm2 can be obtained at only 0.6 V/μm. Their low effective work function of ∼ 0.0056 eV and their conical bases—which effectively reduce the screening effect due to sufficient distance between adjacent tubular cones—are both favorable to field emission enhancement.
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81.05.U- Carbon/carbon-based materials
79.70.+q Field emission, ionization, evaporation, and desorption
73.30.+y Surface double layers, Schottky barriers, and work functions
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Near-field spectroscopy of bimodal size distribution of InAs/AlGaAs single quantum dots

Young-Jun Yu, In-Taek Jeong, Jong-Chun Woo, and Wonho Jhe

Appl. Phys. Lett. 87, 143108 (2005); http://dx.doi.org/10.1063/1.2081129 (3 pages) | Cited 6 times

Online Publication Date: 29 September 2005

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We report on high-resolution photoluminescence (PL) spectroscopy of size distribution of InAs/AlGaAs quantum dots (QDs) by using a near-field scanning optical microscope (NSOM). The double-peaked distribution of PL spectra is clearly observed, which is associated with the bimodal size distribution of single QDs. In particular, the size difference of single QDs, represented by the doublet spectral distribution, is directly observed by the NSOM images of PL.
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68.37.Uv Near-field scanning microscopy and spectroscopy
78.55.Cr III-V semiconductors
78.67.Hc Quantum dots

Self-organized nanostripe arrays on ZnO (10-10) surfaces formed during laser molecular-beam-epitaxy growth

Hiroaki Matsui and Hitoshi Tabata

Appl. Phys. Lett. 87, 143109 (2005); http://dx.doi.org/10.1063/1.2081133 (3 pages) | Cited 17 times

Online Publication Date: 29 September 2005

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Nanostripe arrays with high density in the orders of 10−5 cm−1 were naturally formed on ZnO (10-10) surfaces during laser molecular-beam-epitaxy (laser-MBE) growth. The nanostripe arrays were elongated above 5 μm with a few branches along the [0001] direction. Transmittance electron microscopy showed that the nanostripe arrays were triangular-shaped in the cross section and two side bonding facets were composed of high-index [(31-40) and (4-1-30)] planes. The growth origin of the nanostripe arrays was derived from a step-faceting mechanism and nonthermal equilibrium growth by laser-MBE. The step faceting could be controlled by various growth conditions relating to the surface diffusion length of the ablated active species. It was found that the highly anisotropic surfaces dramatically affected electron transport of the ZnO (10-10) layers with Hall mobility parallel to the nanostripe edges more than two orders of magnitude larger than that perpendicular to the edges.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.05.Dz II-VI semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.16.Dn Self-assembly
81.07.Bc Nanocrystalline materials
61.46.-w Structure of nanoscale materials
81.16.Mk Laser-assisted deposition
68.37.Lp Transmission electron microscopy (TEM)
68.35.Fx Diffusion; interface formation
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Chemical turnstile

W. T. Lee and E. K. H. Salje

Appl. Phys. Lett. 87, 143110 (2005); http://dx.doi.org/10.1063/1.2084339 (2 pages) | Cited 2 times

Online Publication Date: 29 September 2005

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A chemical turnstile is a device for transporting small, well-characterized doses of atoms from one location to another. A working turnstile has yet to be built, despite the numerous technological applications available for such a device. The key difficulty in manufacturing a chemical turnstile is finding a medium which will trap and transport atoms. Here we propose that ferroelastic twin walls are suitable for this role. Previous work shows that twin walls can act as two-dimensional trapping planes within which atomic transport is fast. We report simulations showing that a stress-induced reorientation of a twin wall can occur. This behavior is ideal for chemical turnstile applications.
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81.16.Ta Atom manipulation

InGaN nanorings and nanodots by selective area epitaxy

P. Chen, S. J. Chua, Y. D. Wang, M. D. Sander, and C. G. Fonstad

Appl. Phys. Lett. 87, 143111 (2005); http://dx.doi.org/10.1063/1.2056584 (3 pages) | Cited 12 times

Online Publication Date: 30 September 2005

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An integrated process to fabricate controllable arrays of semiconductor nanorings and nanodots on patterned surfaces is presented. This approach is based on pattern transfer of nanopores to a SiO2 layer, followed by selective epitaxial growth of InGaN onto an underlying GaN substrate using metalorganic chemical vapor deposition. Using this approach, crystalline InGaN nanorings and nanodots ∼ 80 nm in diameter have been grown on GaN surfaces. The formation mechanism of the nanorings and nanodots is described based on the initial stage of selective growth and restricted atom migration in a confined hole. Strong photoluminescence obtained at room temperature from the noncapped nanorings indicates strong confinement of the excitons in the nanostructures. This approach enables fabrication of dense, uniform arrays of epitaxial nanostructures and is potentially applicable to a variety of materials systems.
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81.05.Ea III-V semiconductors
81.07.Ta Quantum dots
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
61.46.-w Structure of nanoscale materials
71.35.-y Excitons and related phenomena

Synthesis of silicon nanocones using rf microplasma at atmospheric pressure

H. Shirai, T. Kobayashi, and Y. Hasegawa

Appl. Phys. Lett. 87, 143112 (2005); http://dx.doi.org/10.1063/1.2084342 (3 pages) | Cited 20 times

Online Publication Date: 30 September 2005

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We report the synthesis of silicon nanocones using the rf microplasma discharge at atmospheric pressure. The products formed underneath the tube electrode on Fe-coated crystalline silicon were constituted mainly of silicon and silicon oxide despite the use of a methane-argon mixture. Carbon nanotubes and silicon nanowires were also formed around the silicon nanocones. The number density and average size of silicon nanocones increased with the plasma exposure time accompanied by the enlargement of their surface distribution. The growth mechanism of silicon nanocones is discussed in terms of the catalytic growth via diffusion of silicon with nanocrystalline Si particle through FeSix nanoclusters, and enhanced Si oxidation by the plasma heating.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.46.-w Structure of nanoscale materials
52.77.-j Plasma applications
81.16.-c Methods of micro- and nanofabrication and processing

Influence of oxygen on optical properties of Si nanocrystallites

L. E. Ramos, J. Furthmüller, and F. Bechstedt

Appl. Phys. Lett. 87, 143113 (2005); http://dx.doi.org/10.1063/1.2084325 (3 pages) | Cited 12 times

Online Publication Date: 30 September 2005

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The influence of oxygen on optical absorption spectra, radiative lifetimes, and localization of states is analyzed within the quasiparticle formalism based on the GW approximation for defect-free Si nanocrystallites. Passivation with hydroxyls and oxide coverage have significant influence on the spatial distribution of the highest-occupied and lowest-unoccupied molecular orbitals as well as on the radiative lifetimes. Oxidation blueshifts the onset of absorption, whereas oxide coverage and passivation with hydroxyls tend to redshift it. The indirect-gap nature of the optical transitions in Si bulk is transferred to the Si nanocrystallites independently of the oxygen contents.
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78.55.Ap Elemental semiconductors
61.46.-w Structure of nanoscale materials
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
81.65.Rv Passivation
81.65.Mq Oxidation
71.20.Mq Elemental semiconductors
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