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10 Oct 2005

Volume 87, Issue 15, Articles (15xxxx)

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Appl. Phys. Lett. 87, 151103 (2005); http://dx.doi.org/10.1063/1.2089157 (3 pages)

Andrew B. Greytak, Carl J. Barrelet, Yat Li, and Charles M. Lieber
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Exclusive-OR gate using a two-input single-electron transistor in single-wall carbon nanotubes

D. Tsuya, M. Suzuki, Y. Aoyagi, and K. Ishibashi

Appl. Phys. Lett. 87, 153101 (2005); http://dx.doi.org/10.1063/1.2089149 (3 pages) | Cited 10 times

Online Publication Date: 3 October 2005

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We demonstrated a two-input exclusive-OR (XOR) gate using a single-electron transistor with two similar side gates in single-wall carbon nanotubes. Coulomb peaks were adjusted to have a half phase difference by a high input voltage to one of the two gates. The output current was in a low level when the same voltages, high or low, were applied to both gates, while it was in a high level when different voltages were applied to each gate, a XOR behavior. The present device operated up to ∼ 30 K.
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85.35.Gv Single electron devices
85.35.Kt Nanotube devices
85.35.Ds Quantum interference devices
84.30.Sk Pulse and digital circuits

Electrochemical capacitance from manganese oxide nanowire structure synthesized by cyclic voltammetric electrodeposition

Mao-Sung Wu

Appl. Phys. Lett. 87, 153102 (2005); http://dx.doi.org/10.1063/1.2089169 (3 pages) | Cited 32 times

Online Publication Date: 3 October 2005

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Manganese oxide electrodes of nanowire structure are electrochemically synthesized by cyclic voltammetric electrodeposition at room temperature without surfactant, catalyst, or template. Electrode morphology depends on the deposition potential, which greatly influences the electrochemical performances of the capacitor. When the deposition potential is the range of 0.1–0.6 V versus saturated calomel electrode, electrode morphology changes from nanorod (15–35 nm in diameter) to nanowire structure (8–16 nm in diameter). Specific capacitance of the electrode reaches 350 Fg−1 and the electrode shows a good high-rate charge/discharge capability in aqueous Na2SO4 solution. Manganese oxide electrode of nanowire structure is therefore a suitable candidate for electrochemical capacitor use.
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82.47.Uv Electrochemical capacitors; supercapacitors
84.32.Tt Capacitors
82.45.Fk Electrodes
61.46.-w Structure of nanoscale materials
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.15.Pq Electrodeposition, electroplating
82.45.Qr Electrodeposition and electrodissolution

Ex situ ellipsometric investigation of nanocolumns inclination angle of obliquely evaporated silicon thin films

Gisia Beydaghyan, Cristina Buzea, Yan Cui, Chelsea Elliott, and Kevin Robbie

Appl. Phys. Lett. 87, 153103 (2005); http://dx.doi.org/10.1063/1.2084329 (3 pages) | Cited 15 times

Online Publication Date: 3 October 2005

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We propose an application of spectroscopic ellipsometry pertinent to the characterization of nanostructure inclination of oblique thin films. This technique is employed ex situ in the measurement of silicon thin films fabricated at oblique incidence and modeled as aggregate microstructures formed from amorphous silicon, silicon oxide, and void in the effective medium model. The technique may also be utilized in situ as a powerful probe for the characterization of oblique thin films during their fabrication and processing.
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78.20.Bh Theory, models, and numerical simulation
78.67.−n
68.55.-a Thin film structure and morphology
07.60.Fs Polarimeters and ellipsometers

Direct imaging of quantum antidots in MgO dispersed with Au nanoclusters

C. M. Wang, V. Shutthanandan, S. Thevuthasan, and G. Duscher

Appl. Phys. Lett. 87, 153104 (2005); http://dx.doi.org/10.1063/1.2099518 (3 pages) | Cited 4 times

Online Publication Date: 3 October 2005

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Formation of quantum antidots at the immediate neighborhood of Au nanocluster has been proposed in order to explain the observed nonlinear optical behavior of magnesium oxide (MgO) when Au nanoclusters were dispersed in it. In this letter, using high-angle annular dark-field imaging in an aberration-corrected scanning transmission electron microscope, we report the direct observation of clustering of vacancies in excess of Au atoms to form quantum antidots at the immediate neighborhood of the Au clusters, leading to a spatially associated Au nanoclusters and the quantum antidots. The antidots show a terraced layer structure and are typically faceted along the MgO{100} planes.
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68.65.Hb Quantum dots (patterned in quantum wells)
61.46.-w Structure of nanoscale materials
61.72.J- Point defects and defect clusters
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)

Cupric oxide nanoparticles in SiO2 fabricated by copper-ion implantation combined with thermal oxidation

H. Amekura, K. Kono, Y. Takeda, and N. Kishimoto

Appl. Phys. Lett. 87, 153105 (2005); http://dx.doi.org/10.1063/1.2089151 (3 pages) | Cited 18 times

Online Publication Date: 5 October 2005

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Cupric oxide (CuO) nanoparticles (NPs) are fabricated in silica glasses (SiO2) by Cu-ion implantation and following thermal oxidation. First, Cu metal NPs were formed in SiO2 by the implantation of Cu negative ions of 60 keV to ∼ 6×1016 ions/cm2, and then the Cu NPs were oxidized to CuO NPs by annealing at 400–1000 °C in oxygen-gas flow. After the oxidation at 600 °C for 1 h, the surface plasmon resonance peak of metallic Cu NPs disappears. Grazing-incidence x-ray diffraction confirms the disappearance of Cu NPs and the formation of CuO NPs, but excludes the formation of Cu2O NPs which are thermodynamically less stable under atmospheric oxygen pressure. The CuO NPs show higher thermal stability up to ∼ 1000 °C than Cu NPs.
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81.07.Bc Nanocrystalline materials
61.46.-w Structure of nanoscale materials
61.72.up Other materials
81.16.Pr Micro- and nano-oxidation
81.65.Mq Oxidation
81.40.Gh Other heat and thermomechanical treatments
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
73.22.Lp Collective excitations

Phonon heat transport in silicon nanostructures

Y. Sungtaek Ju

Appl. Phys. Lett. 87, 153106 (2005); http://dx.doi.org/10.1063/1.2089178 (3 pages) | Cited 21 times

Online Publication Date: 5 October 2005

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Phonon heat conduction is one of the critical research areas for nanoelectronics. The thermal conductivity of silicon nanostructures is studied to gain insight into heat conduction in silicon and related semiconductors. We experimentally show that phonon-boundary scattering results in a significant reduction in the thermal conductivity of crystalline silicon films of thickness below 100 nm at room temperature, which is consistent with the previously reported data for silicon nanowires. Analysis of the data suggests that phonon modes that dominate heat conduction in silicon are fully excited at temperatures substantially below the Debye temperature.
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63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves

Empirical correlation finding the role of temperature and particle size for nanofluid (Al2O3) thermal conductivity enhancement

Chan Hee Chon, Kenneth D. Kihm, Shin Pyo Lee, and Stephen U. S. Choi

Appl. Phys. Lett. 87, 153107 (2005); http://dx.doi.org/10.1063/1.2093936 (3 pages) | Cited 136 times

Online Publication Date: 5 October 2005

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In this letter, we report an experimental correlation [Eqs. ( 1a , 1b ) or ( 1c )] for the thermal conductivity of Al2O3 nanofluids as a function of nanoparticle size (ranging from 11 nm to 150 nm nominal diameters) over a wide range of temperature (from 21 to 71 °C). Following the previously proposed conjecture from the theoretical point-of-view (Jang and Choi, 2004), it is experimentally validated that the Brownian motion of nanoparticles constitutes a key mechanism of the thermal conductivity enhancement with increasing temperature and decreasing nanoparticle sizes.
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66.25.+g Thermal conduction in nonmetallic liquids
61.46.-w Structure of nanoscale materials

Microstructural study of an oscillatory formation reaction in nanostructured reactive multilayer foils

J. C. Trenkle, J. Wang, T. P. Weihs, and T. C. Hufnagel

Appl. Phys. Lett. 87, 153108 (2005); http://dx.doi.org/10.1063/1.2099544 (3 pages) | Cited 17 times

Online Publication Date: 6 October 2005

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We report evidence of an oscillatory formation reaction in nanostructured Zr/Al/(CuNi) reactive multilayer foils. The oscillations create periodic ripples on the surface of the foil as well as periodic variations in the length scale of the microstructure of the reacted foil. We describe the nature of the resulting microstructure, and relate this to superadiabatic temperature oscillations at the reaction front. We also examine the effect of ambient temperature on the magnitude and period of the oscillations, and compare the results to numerical predictions and to experimental data for other reactive systems.
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61.46.-w Structure of nanoscale materials

Vortex rings in pure water under static external electric field

Z. G. Chiragwandi, O. Nur, M. Willander, and I. Panas

Appl. Phys. Lett. 87, 153109 (2005); http://dx.doi.org/10.1063/1.2099523 (3 pages) | Cited 5 times

Online Publication Date: 6 October 2005

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The reproducible development of vortex rings in pure water under the action of a static external electric field is demonstrated. The phenomenon results from the electrochemical decomposition of water. Given the low conductivity of water in the absence of electrolyte, the field-driven buildup of hydroxide ions at the anode becomes essential to the proton release, which in turn is the result of the molecular O2(g) evolution. Water recombination processes, which have protons flowing in a hydroxide background, as a key ingredient produce the phenomenon.
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82.45.-h Electrochemistry and electrophoresis

Composition profiles of InAs–GaAs quantum dots determined by medium-energy ion scattering

P. D. Quinn, N. R. Wilson, S. A. Hatfield, C. F. McConville, G. R. Bell, T. C. Q. Noakes, P. Bailey, S. Al-Harthi, and F. Gard

Appl. Phys. Lett. 87, 153110 (2005); http://dx.doi.org/10.1063/1.2099533 (3 pages) | Cited 9 times

Online Publication Date: 6 October 2005

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The composition profile along the [001] growth direction of low-growth-rate InAs–GaAs quantum dots (QDs) has been determined using medium-energy ion scattering (MEIS). A linear profile of In concentration from 100% In at the top of the QDs to 20% at their base provides the best fit to MEIS energy spectra.
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68.65.Hb Quantum dots (patterned in quantum wells)
68.49.Sf Ion scattering from surfaces (charge transfer, sputtering, SIMS)

Mixing at 50 GHz using a single-walled carbon nanotube transistor

Sami Rosenblatt, Hao Lin, Vera Sazonova, Sandip Tiwari, and Paul L. McEuen

Appl. Phys. Lett. 87, 153111 (2005); http://dx.doi.org/10.1063/1.2103391 (3 pages) | Cited 60 times

Online Publication Date: 6 October 2005

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We have probed the electrical properties of top-gated single-walled carbon nanotube transistors at frequencies up to 50 GHz by using the device as a microwave mixer. We find that the amplitude of the mixing signal decays as a function of frequency with a characteristic time constant that is limited by the setup. Despite the setup-limited cutoff frequency of ∼ 10 GHz, we show that the devices still operate faster than 50 GHz.
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85.35.Kt Nanotube devices
85.30.-z Semiconductor devices
84.30.Qi Modulators and demodulators; discriminators, comparators, mixers, limiters, and compressors
85.30.Tv Field effect devices

Uniform and high-quality submicrometer tubes of GaS layered crystals

J. Q. Hu, Y. Bando, J. H. Zhan, Z. W. Liu, and D. Golberg

Appl. Phys. Lett. 87, 153112 (2005); http://dx.doi.org/10.1063/1.2093924 (3 pages) | Cited 5 times

Online Publication Date: 7 October 2005

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GaS, group III–VI semiconductor compound, is known to possess a layered structure. In this letter, uniform and high-quality GaS submicrometer tubes have been synthesized via a simple high-temperature thermal reaction route. Each GaS tube is uniform in size, and has length up to tens of microns and outer diameter of ∼ 200–900 nm; some of the tubes are partially filled with liquid metallic Ga “rods.” Photoluminescence spectrum reveals that the GaS tubes have two strong emission bands centered at ∼ 585 and ∼ 615 nm. Possible reaction processes and a rolling-up growth mechanism of as-grown GaS tubes were briefly discussed.
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81.05.Hd Other semiconductors
81.07.De Nanotubes
81.16.-c Methods of micro- and nanofabrication and processing
78.67.Ch Nanotubes
78.55.Hx Other solid inorganic materials
61.46.-w Structure of nanoscale materials

Spin-preserving ultrafast carrier capture and relaxation in InGaAs quantum dots

S. Trumm, M. Wesseli, H. J. Krenner, D. Schuh, M. Bichler, J. J. Finley, and M. Betz

Appl. Phys. Lett. 87, 153113 (2005); http://dx.doi.org/10.1063/1.2103399 (3 pages) | Cited 12 times

Online Publication Date: 7 October 2005

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Carrier capture into self-organized InGaAs/GaAs quantum dots with an electronic level spacing close to optical phonon energies is studied in a two-color femtosecond transmission experiment. After resonant generation of carriers in the wetting layer, we analyze the population of both the band edge of the wetting layer and the excited states of the quantum dots. Most strikingly, the carrier capture time of 3 ps is found to be independent of the carrier density, providing that it remains small compared to the number of available electronic states in the quantum dots. Moreover, we find that the capture process is predominantly spin preserving in nature. These results suggest that phonon-mediated scattering governs the quantum dot filling.
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73.63.Kv Quantum dots
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.21.La Quantum dots
75.75.-c Magnetic properties of nanostructures
78.67.Hc Quantum dots
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
63.20.D- Phonon states and bands, normal modes, and phonon dispersion
78.47.-p Spectroscopy of solid state dynamics
68.08.Bc Wetting
71.20.Nr Semiconductor compounds
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