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Appl. Phys. Lett. 87, 171902 (2005); doi:10.1063/1.2112198 (3 pages)

Patterning of sub-10-nm Ge islands on Si(100) by directed self-assembly

Olivier Guise1, John T. Yates1, Jeremy Levy1, Joachim Ahner2, Venugopalan Vaithyanathan3, and Darrell G. Schlom3

1University of Pittsburgh, Pittsburgh, Pennsylvania 15260
2Seagate Technology, Pittsburgh, Pennsylvania 15222
3Pennsylvania State University, University Park, Pennsylvania 16802

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(Received 28 April 2005; accepted 14 September 2005; published online 17 October 2005)

A process is reported for creating arbitrary patterns of sub-10-nm Ge islands on a Si(100) substrate by directed self-assembly. Carbon-based templates are created on Si substrates by electron-beam-induced deposition using high-resolution electron beam lithography. Ozone etching, followed by annealing in ultra-high vacuum, yields small (<4 nm) SiC nucleation sites for subsequently deposited Ge. Quantitative analysis of atomic force microscope images reveals templated Ge islands with mean diameter d ∼ 8 nm, averaging 2000±500 atoms per island, with controlled spacings as small as 35 nm, and 2 nm absolute positional accuracy. The Ge/Si nanostructures reported here may find use in end-of-scaling classical computing and single-electron devices and spin-based quantum computing architectures.

© 2005 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 81.05.Cy

    Elemental semiconductors

  • 81.07.Bc

    Nanocrystalline materials

  • 81.16.Dn

    Self-assembly

  • 81.15.-z

    Methods of deposition of films and coatings; film growth and epitaxy

  • 81.16.Nd

    Micro- and nanolithography

  • 81.65.Cf

    Surface cleaning, etching, patterning

  • 81.40.Gh

    Other heat and thermomechanical treatments

  • 68.37.Ps

    Atomic force microscopy (AFM)

PUBLICATION DATA

ISSN:

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
    S. Y. Huang, S. Banerjee, R. T. Tung, and S. Oda, J. Appl. Phys. 94, 7261 (2003)JAPIAU000094000011007261000001.

    P. W. Li, W. M. Liao, D. M. T. Kuo, S. W. Lin, P. S. Chen, S. C. Lu, and M. J. Tsai, Appl. Phys. Lett. 85, 1532 (2004)APPLAB000085000009001532000001.

    C. S. Lent, P. D. Tougaw, and W. Porod, Appl. Phys. Lett. 62, 714 (1993)APPLAB000062000007000714000001.

    J. Levy, Phys. Rev. A 64, 052306 (2001).

    T. D. Ladd, J. R. Goldman, F. Yamaguchi, Y. Yamamoto, E. Abe, and K. M. Itoh, Phys. Rev. Lett. 89, 017901 (2002).

    M. Friesen, P. Rugheimer, D. E. Savage, M. G. Lagally, D. W. van der Weide, R. Joynt, and M. A. Eriksson, Phys. Rev. B 67, 121301 (2003).

    Y.-W. Mo, D. E. Savage, B. S. Swartzentruber, and M. G. Lagally, Phys. Rev. Lett. 65, 1020 (1990).

    D. J Eaglesham and M. Cerullo, Phys. Rev. Lett. 64, 1943 (1990).

    J. Drucker and S. Chaparro, Appl. Phys. Lett. 71, 614 (1997)APPLAB000071000005000614000001.

    E. S. Kim, N. Usami, and Y. Shiraki, Appl. Phys. Lett. 72, 1617 (1998)APPLAB000072000013001617000001.

    M. Kammler, R. Hull, M. C. Reuter, and F. M. Ross, Appl. Phys. Lett. 82, 1093 (2003)APPLAB000082000007001093000001.

    O. Guise, J. Ahner, J. T. Yates, Jr., and J. Levy, Appl. Phys. Lett. 85, 2352 (2004)APPLAB000085000012002352000001.


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