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Applied Physics Letters / Volume 87 / Issue 17 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 87, 172101 (2005); doi:10.1063/1.2093927 (3 pages)

Charged exciton emission at 1.3 μm from single InAs quantum dots grown by metalorganic chemical vapor deposition

N. I. Cade1, H. Gotoh1, H. Kamada1, T. Tawara1, T. Sogawa1, H. Nakano1, and H. Okamoto2

1NTT Basic Research Laboratories, NTT Corporation, Atsugi, 243-0198 Japan
2NTT Photonics Laboratories, NTT Corporation, Atsugi, 243-0198 Japan

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(Received 10 May 2005; accepted 18 August 2005; published online 17 October 2005)

We have studied the emission properties of self-organized InAs quantum dots (QDs) grown in an InGaAs quantum well by metalorganic chemical vapor deposition. Low-temperature photoluminescence spectroscopy shows emission from single QDs around 1300 nm; we clearly observe the formation of neutral and charged exciton and biexciton states, and we obtain a biexciton binding energy of 3.1 meV. The dots exhibit an s-p shell splitting of approximately 100 meV, indicating strong confinement.

© 2005 American Institute of Physics

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KEYWORDS and PACS

Keywords

indium compounds, III-V semiconductors, semiconductor quantum dots, MOCVD, semiconductor growth, biexcitons, self-assembly, photoluminescence, binding energy

PACS

ARTICLE DATA

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http://link.aip.org/link/doi/10.1063/1.2093927

PUBLICATION DATA

ISSN:

0003-6951 (print)  
1077-3118 (online)

Publisher:

$abstract.society.value is a Member of CrossRef American Institute of Physics

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