APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 87 / Issue 17 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 87, 172102 (2005); http://dx.doi.org/10.1063/1.2112169 (3 pages)

Exciton hopping and nonradiative decay in AlGaN epilayers

K. Kazlauskas1, A. Žukauskas1, G. Tamulaitis1, J. Mickevičius2, M. S. Shur2, R. S. Qhalid Fareed3, J. P. Zhang3, and R. Gaska3

1Institute of Materials Science and Applied Research and Semiconductor Physics Department, Vilnius University, LT-10222 Vilnius, Lithuania
2Department of ECE and CIE, Rensselaer Polytechnic Institute, Troy, New York 12180
3Sensor Electronic Technology, Inc., Columbia, South Carolina 29209

View MapView Map

(Received 21 June 2005; accepted 30 August 2005; published online 17 October 2005)

Monte Carlo simulation of phonon-assisted localized exciton hopping has been employed to describe the photoluminescence linewidth variation with temperature and to reveal band potential profile of ternary AlGaN epilayers with different carrier lifetimes. The lifetimes of 30 and 190 ps were experimentally determined in the layers with AlN buffers grown by conventional metal-organic chemical vapor deposition (MOCVD) and by migration-enhanced MOCVD (MEMOCVD™), respectively. The potential profile in AlGaN is shown to consist of double-scaled fluctuations. Exciton hopping in Al0.26Ga0.74N occurs within the random potential fluctuations (on the scale σ ≈ 19 meV) in isolated low-potential regions with the average localization energy dispersed on the scale Γ ≈ 19 meV. Such a pattern of band potential profile was found to be independent on the growth technique used for the deposition of their AlN buffer layers. This implies that the large difference in carrier lifetimes estimated in the AlGaN epilayers with the same Al content is caused by different densities of nonradiative recombination centers rather than by carrier localization in the potential fluctuations.

© 2005 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

aluminium compounds, gallium compounds, III-V semiconductors, wide band gap semiconductors, phonon-exciton interactions, semiconductor epitaxial layers, Monte Carlo methods, photoluminescence, carrier lifetime, buffer layers, MOCVD, fluctuations, potential energy surfaces, electron-hole recombination, semiconductor growth

PACS

  • 81.05.Ea

    III-V semiconductors

  • 63.20.kk

    Phonon interactions with other quasiparticles

  • 71.35.-y

    Excitons and related phenomena

  • 78.55.Cr

    III-V semiconductors

  • 78.66.Fd

    III-V semiconductors

  • 73.61.Ey

    III-V semiconductors

  • 73.50.Gr

    Charge carriers: generation, recombination, lifetime, trapping, mean free paths

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

  • 81.15.Kk

    Vapor phase epitaxy; growth from vapor phase

  • 68.55.A-

    Nucleation and growth

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2112169

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    J. P. Zhang, X. Hu, Yu. Bilenko, J. Deng, A. Lunev, M. S. Shur, R. Gaska, M. Shatalov, J. W. Yang, and M. A. Khan, Appl. Phys. Lett. 85, 5532 (2004)APPLAB000085000023005532000001.

    R. S. Q. Fareed, R. Jain, R. Gaska, M. S. Shur, J. Wu, W. Walukiewicz, and M. A. Khan, Appl. Phys. Lett. 84, 1892 (2004)APPLAB000084000011001892000001.

    T. Takayama, M. Yuri, K. Itoh, and J. S. Harris, Jr., J. Appl. Phys. 90, 2358 (2001)JAPIAU000090000005002358000001.

    L. Chang, S. K. Lai, F. R. Chen, and J. J. Kai, Appl. Phys. Lett. 79, 928 (2001)APPLAB000079000007000928000001

    G. Steude, B. K. Meyer, A. Göldner, A. Hoffmann, F. Bertram, J. Christen, H. Amano, and I. Akasaki, Appl. Phys. Lett. 74, 2456 (1999)APPLAB000074000017002456000001.

    A. Bell, S. Srinivasan, C. Plumlee, H. Omiya, F. A. Ponce, J. Christen, S. Tanaka, A. Fujioka, and Y. Nakagawa, J. Appl. Phys. 95, 4670 (2004)JAPIAU000095000009004670000001.

    H.-M. Wang, J.-P. Zhang, C.-Q. Chen, Q. Fareed, J.-W. Yang, and M. A. Khan, Appl. Phys. Lett. 81, 604 (2002)APPLAB000081000004000604000001.

    O. Brandt, H. Yang, and K. H. Ploog, Phys. Rev. B 54, R5215 (1996).

    S. Jursenas, S. Miasojedovas, G. Kurilcik, A. Zukauskas, and P. R. Hageman, Appl. Phys. Lett. 83, 66 (2003)APPLAB000083000001000066000001.

    K. Kazlauskas, G. Tamulaitis, P. Pobedinskas, A. Zukauskas, M. Springis, C.-F. Huang, Y.-C. Cheng, and C. C. Yang, Phys. Rev. B 71, 085306 (2005).

    K. Kazlauskas, G. Tamulaitis, A. Zukauskas, M. A. Khan, J. W. Yang, J. Zhang, G. Simin, M. S. Shur, and R. Gaska, Appl. Phys. Lett. 83, 3722 (2003)APPLAB000083000018003722000001.

    Y.-H. Cho, G. H. Gainer, J. B. Lam, J. J. Song, W. Yang, and W. Jhe, Phys. Rev. B 61, 7203 (2000).


For access to citing articles, you need to log in.


Figures (3)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Exciton hopping and nonradiative decay in AlGaN epilayers
  2. Charged exciton emission at 1.3 μm from single InAs quantum dots grown by metalorganic chemical vapor deposition
Go to AIP Home
Copyright © American Institute of Physics
close