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24 Oct 2005

Volume 87, Issue 17, Articles (17xxxx)

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Appl. Phys. Lett. 87, 172506 (2005); http://dx.doi.org/10.1063/1.2120911 (3 pages)

T. Kimura, Y. Otani, and J. Hamrle
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Comment on “Radiative and nonradiative recombination process in InN films grown by metal organic chemical vapor deposition” [ Appl. Phys. Lett. 86, 142104 (2005) ]

B. Liu, R. Zhang, Z. L. Xie, X. Q. Xiu, Z. X. Bi, S. L. Gu, Y. Shi, Y. D. Zheng, L. J. Hu, Y. H. Chen, and Z. G. Wang

Appl. Phys. Lett. 87, 176101 (2005); http://dx.doi.org/10.1063/1.2117612 (2 pages) | Cited 4 times

Online Publication Date: 19 October 2005

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Abstract Unavailable
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78.55.Cr III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
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Response to “Comment on ‘Radiative and nonradiative recombination processes in InN films grown by metal organic chemical vapor deposition’” Appl. Phys. Lett. 87, 176101 (2005)

R. Intartaglia, B. Maleyre, S. Ruffenach, O. Briot, T. Taliercio, and B. Gil

Appl. Phys. Lett. 87, 176102 (2005); http://dx.doi.org/10.1063/1.2117613 (1 page)

Online Publication Date: 19 October 2005

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Abstract Unavailable
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
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