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24 Oct 2005

Volume 87, Issue 17, Articles (17xxxx)

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Appl. Phys. Lett. 87, 172506 (2005); http://dx.doi.org/10.1063/1.2120911 (3 pages)

T. Kimura, Y. Otani, and J. Hamrle
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Low-temperature growth and interface characterization of BiFeO3 thin films with reduced leakage current

Yi-Hsien Lee, Jenn-Ming Wu, Yu-Lun Chueh, and Li-Jen Chou

Appl. Phys. Lett. 87, 172901 (2005); http://dx.doi.org/10.1063/1.2112181 (3 pages) | Cited 69 times

Online Publication Date: 17 October 2005

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BiFeO3 (BFO) thin films of pure perovskite phase were deposited on LaNiO3-buffered Pt/TiOx/SiO2/Si (LNO) and Pt/TiOx/SiO2/Si (Pt) substrates by RF magnetron sputtering. Highly (100)-oriented BFO film was coherently grown on LNO at a temperature as low as 300 °C. The crystal structure and the film/electrode interface of BFO films were characterized using x-ray diffraction and scanning transmission electron microscope high-angle annular dark-field imaging. The conventional problem of the leakage current was greatly reduced with remarkable improvement in the film/electrode interface, chemical homogeneity, crystallinity, and surface roughness of the BFO film.
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81.15.Cd Deposition by sputtering
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
68.35.Ct Interface structure and roughness
77.55.-g Dielectric thin films
75.50.Dd Nonmetallic ferromagnetic materials
77.80.-e Ferroelectricity and antiferroelectricity
62.20.D- Elasticity
62.20.F- Deformation and plasticity
81.40.Jj Elasticity and anelasticity, stress-strain relations
75.70.Ak Magnetic properties of monolayers and thin films
68.35.B- Structure of clean surfaces (and surface reconstruction)

Electrical and dielectric behaviors of Ti3SiC2∕Yttria-stabilized zirconia composites

Sui-Lin Shi, Wei Pan, Ming-Hao Fang, and Zhen-Yi Fang

Appl. Phys. Lett. 87, 172902 (2005); http://dx.doi.org/10.1063/1.2117625 (3 pages) | Cited 5 times

Online Publication Date: 20 October 2005

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Ti3SiC2/3Y‐TZP (3 mol % Yttria-stabilized zirconia) composites were prepared by spark plasma sintering. The effective dc conductivities of the composites have been measured and the percolation threshold was determined. The dielectric behavior of the composites was studied in the frequency range 102–4×107 Hz. The results show that the dielectric constant increased remarkably with the Ti3SiC2 concentration, when the Ti3SiC2 concentration was close to percolation threshold. This may be attributed to the critical behavior of the dielectric constant near the percolation threshold as well as to the polarization effects between the clusters inside the composites.
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77.84.Lf Composite materials
72.80.Tm Composite materials
77.22.Ch Permittivity (dielectric function)
77.22.Ej Polarization and depolarization

Observation of ferroelectricity in a confined crystallite using electron-backscattered diffraction and piezoresponse force microscopy

P. Gupta, H. Jain, D. B. Williams, Sergei V. Kalinin, J. Shin, S. Jesse, and A. P. Baddorf

Appl. Phys. Lett. 87, 172903 (2005); http://dx.doi.org/10.1063/1.2120919 (3 pages) | Cited 3 times

Online Publication Date: 21 October 2005

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LaBGeO5 is a model transparent ferroelectric glass-ceramic (TFGC) material, developed as an inexpensive alternative to single-crystal nonlinear optical materials. The optical activity of the TFGC originates from the ferroelectric phase which remains under a hydrostatic pressure exerted by the surrounding glass matrix. A combination of two techniques, electron-backscattered diffraction (EBSD) and piezoresponse force microscopy (PFM), is employed to monitor the development of the ferroelectric phase. A method is proposed to theoretically construct PFM amplitude maps from EBSD orientation maps. The theoretical vertical piezoresponse map is compared with the experimental piezoresponse map from PFM. A good correlation between the theoretical and experimental maps is observed.
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77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.65.-k Nonlinear optics
79.20.Kz Other electron-impact emission phenomena
77.65.-j Piezoelectricity and electromechanical effects
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