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7 Nov 2005

Volume 87, Issue 19, Articles (19xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 87, 192502 (2005); http://dx.doi.org/10.1063/1.2128478 (3 pages)

Ki-Suk Lee, SangKook Choi, and Sang-Koog Kim
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Dielectric and ferroelectric properties of (Na0.8K0.2)0.5Bi0.5TiO3 thin films prepared by metalorganic solution deposition

Changhong Yang, Jianru Han, Xiufeng Cheng, Xin Yin, Zhuo Wang, Minglei Zhao, and Chunlei Wang

Appl. Phys. Lett. 87, 192901 (2005); http://dx.doi.org/10.1063/1.2126129 (3 pages) | Cited 3 times

Online Publication Date: 31 October 2005

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(Na0.8K0.2)0.5Bi0.5TiO3 thin films have been prepared on Pt/TiO2/SiO2/Si and p-type Si substrates using a metalorganic solution deposition method. The films annealed at 700 °C crystallize well and present perovskite phase. The films exhibit a well-defined hysteresis loop at an applied voltage of 4 V, with a remanent polarization of 4.7 μC/cm2 and a coercive field of 38 kV/cm. The films also show fatigue-free response up to 1.5×1010 switching cycles. The relaxor behavior of the films is confirmed by the frequency-dependence of capacitance-temperature relation. The capacitance-voltage curves show that the films are polarization-type switching and the memory window is about 2.5 V at ±4 V applied dc bias voltages. The changes of dielectric constant and dissipation factor with frequency are also investigated briefly.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
77.22.Ch Permittivity (dielectric function)
81.40.Gh Other heat and thermomechanical treatments

Characteristics of lead zirconate titanate ferroelectric thick films from a screen-printing laser transfer method

Baomin Xu, David White, James Zesch, Alexandra Rodkin, Steve Buhler, John Fitch, and Karl Littau

Appl. Phys. Lett. 87, 192902 (2005); http://dx.doi.org/10.1063/1.2126133 (3 pages) | Cited 9 times

Online Publication Date: 1 November 2005

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Microstructures and electrical properties of lead zirconate titanate (PZT) thick films made by using a screen-printing laser transfer method have been studied. The PZT thick-film elements were first screen printed on a sapphire substrate and sintered at 1150 to 1250 °C. Then they were bonded to a target substrate such as silicon and released from the sapphire by means of an excimer laser exposure from the backside of the sapphire substrate. This approach makes it possible to obtain highly densified films because there is less limitation on sintering conditions, and allows integrating patterned PZT thick films onto many kinds of substrates. The thick films have dielectric constants of 1397 to 1675, remnant polarization of 32 to 35 μC/cm2, a piezoelectric constant d31 of about −124 pm/V, and Young’s modulus Y11E(59.4 GPa) of almost the same as the corresponding bulk ceramic.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
77.65.Bn Piezoelectric and electrostrictive constants
77.22.Ch Permittivity (dielectric function)
77.22.Ej Polarization and depolarization
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity

Sub-bandgap defect states in polycrystalline hafnium oxide and their suppression by admixture of silicon

N. V. Nguyen, Albert V. Davydov, Deane Chandler-Horowitz, and Martin M. Frank

Appl. Phys. Lett. 87, 192903 (2005); http://dx.doi.org/10.1063/1.2126136 (3 pages) | Cited 58 times

Online Publication Date: 2 November 2005

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The crystallinity of atomic layer deposition hafnium oxide was found to be thickness dependent, with the thinnest films being amorphous and thick films being at least partially crystalline. Hafnium oxide films fabricated by metalorganic chemical vapor deposition are mostly monoclinic. Formation of hafnium silicate by admixture of 20% Si prevents crystallization. Electronic defects are reflected by an absorption feature 0.2–0.3 eV below the optical bandgap. These defects arise in polycrystalline, but not in amorphous, hafnium-based oxides.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
71.55.Ht Other nonmetals
78.66.Nk Insulators
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.40.Ha Other nonmetallic inorganics
78.30.Hv Other nonmetallic inorganics
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Uncooled tunable pyroelectric response of antiferroelectric Pb0.97La0.02(Zr0.65Sn0.22Ti0.13)O3 perovskite

Wai-Hung Chan, Zhengkui Xu, Jiwei Zhai, and Haydn Chen

Appl. Phys. Lett. 87, 192904 (2005); http://dx.doi.org/10.1063/1.2128483 (3 pages) | Cited 11 times

Online Publication Date: 3 November 2005

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Pb0.97La0.02(Zr0.65Sn0.22Ti0.13)O3 ceramic was confirmed to be in an antiferroelectric (AFE) phase at T<170 °C by macroscopic and microscopic studies. The electric-field-induced ferroelectric (FE) state was found to exhibit a much longer lifetime than the reasonable laboratory measuring time scale at T<60 °C, which has led to the frequent misinterpretation of this material system as FE. The dc bias dependence of the dielectric and pyroelectric properties was studied as a function of temperature. The poled sample exhibited a low dissipation factor (tan δ ∼ 0.03), a large transient pyroelectric coefficient of the order of 10−3–10−2 Cm−2 K−1, and excellent dc tunability at the FE-to-AFE transition temperature (39 °C/kV/mm). The possible application of this material to uncooled tunable pyroelectric thermal sensing is also discussed.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.B- Phase transitions and Curie point
77.70.+a Pyroelectric and electrocaloric effects
77.22.Ej Polarization and depolarization

Evidence for oxygen vacancy inducing spontaneous normal-relaxor transition in complex perovskite ferroelectrics

Guochu Deng, Guorong Li, Aili Ding, and Qingrui Yin

Appl. Phys. Lett. 87, 192905 (2005); http://dx.doi.org/10.1063/1.2125110 (3 pages) | Cited 27 times

Online Publication Date: 3 November 2005

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The relaxor ferroelectrics—0.3Pb(Zn1/3Nb2/3)O3–0.7(Pb,La)(Zr,Ti)O3—have been produced by sintering in reductive nitrogen ambient and postannealing in oxygen ambient. The two kinds of specimens exhibited great differences in the conductivity as a function of temperature, which indicated a high concentration of oxygen vacancies in the as-sintered specimen. On the other hand, this specimen underwent an evident spontaneous normal-relaxation transition, whereas the as-annealed one did not. The corresponding reason has been analyzed on the basis of the facts, which provide some evidence that the interior stresses due to oxygen deficiency induce the spontaneous normal-relaxor transition in the specimen sintered in reductive ambient.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
61.72.J- Point defects and defect clusters
77.80.-e Ferroelectricity and antiferroelectricity
61.72.Cc Kinetics of defect formation and annealing
62.20.-x Mechanical properties of solids

Effect of Y doping and composition-dependent elastic strain on the electrical properties of (Ba,Sr)TiO3 thin films deposited at 520 °C

Ruey-Ven Wang, Paul C. McIntyre, John D. Baniecki, Kenji Nomura, Takeshi Shioga, Kazuaki Kurihara, and Masatoshi Ishii

Appl. Phys. Lett. 87, 192906 (2005); http://dx.doi.org/10.1063/1.2125113 (3 pages) | Cited 17 times

Online Publication Date: 4 November 2005

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See Also: Erratum

Show Abstract
We demonstrate that large and simultaneous improvements in permittivity, tunability, and leakage current density of (Ba,Sr)TiO3 (BST)-based thin-film capacitors can be achieved by yttrium doping. We have found that, for a low deposition temperature (520 °C) sputtering process, Y-doped BST capacitors exhibit tenfold lower leakage current density (<10−9 A/cm2 at 100 KV/cm) and 70% higher permittivity than nominally undoped BST-based capacitors. Furthermore, this work suggests an intriguing correlation between dopant concentration-dependent elastic strain in the films and their enhanced dielectric properties.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
61.72.up Other materials
77.55.-g Dielectric thin films
77.22.Gm Dielectric loss and relaxation
77.22.Ch Permittivity (dielectric function)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
81.15.Cd Deposition by sputtering
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity
62.20.F- Deformation and plasticity
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