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7 Nov 2005

Volume 87, Issue 19, Articles (19xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 87, 192502 (2005); http://dx.doi.org/10.1063/1.2128478 (3 pages)

Ki-Suk Lee, SangKook Choi, and Sang-Koog Kim
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Transient-current measurement of the trap charge density at interfaces of a thin-film metal∕ferroelectric∕metal structure

L. A. Delimova, I. V. Grekhov, D. V. Mashovets, S. E. Tyaginov, Sangmin Shin, June-Moo Koo, Suk-Pil Kim, and Youngsoo Park

Appl. Phys. Lett. 87, 192101 (2005); http://dx.doi.org/10.1063/1.2125122 (3 pages) | Cited 11 times

Online Publication Date: 31 October 2005

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A method providing estimation of the trap density at metal∕ferroelectric interfaces of a depleted ferroelectric film located between back-to-back Schottky barriers has been developed. The method is based on the recharge of interface traps induced by external bias pulse applied to the metal∕ferroelectric∕metal structure. It is shown that the transient current under bias pulse can be controlled by the trap recharge on the reverse-biased interface. Using the method, the trap charge density on interfaces of the Pt/PZT/Ir(Ti/SiO2/Si) capacitor was found from transient-current measurements to be two orders of magnitude less than the remnant polarization of PbZrxTi1−xO3 film.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
84.32.Tt Capacitors
73.40.Rw Metal-insulator-metal structures
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)
73.30.+y Surface double layers, Schottky barriers, and work functions
73.20.At Surface states, band structure, electron density of states
77.22.Ej Polarization and depolarization

Compressive strain dependence of hole mobility in strained Ge channels

K. Sawano, Y. Abe, H. Satoh, Y. Shiraki, and K. Nakagawa

Appl. Phys. Lett. 87, 192102 (2005); http://dx.doi.org/10.1063/1.2126114 (3 pages) | Cited 12 times

Online Publication Date: 31 October 2005

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The strain dependence of the hole mobility was systematically investigated in the compressively strained Ge channel modulation-doped structure. It was clearly observed that the mobility increases with increasing compressive strain until the strain as high as 1.9%. The highest mobility of 20 800 and 2000 cm2/V s at 8 K and room temperature, respectively, was obtained for the Ge channel structure grown on the relaxed SiGe buffer layers with Ge composition of 53%. The origins of this mobility increase are speculated to be the reduction of effective mass, suppression of interband phonon scattering, and the increased confinement of the holes in the channel layer.
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72.20.Fr Low-field transport and mobility; piezoresistance
73.61.Cw Elemental semiconductors
68.60.Bs Mechanical and acoustical properties
71.20.Mq Elemental semiconductors
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
63.20.-e Phonons in crystal lattices

p type doping of zinc oxide by arsenic ion implantation

G. Braunstein, A. Muraviev, H. Saxena, N. Dhere, V. Richter, and R. Kalish

Appl. Phys. Lett. 87, 192103 (2005); http://dx.doi.org/10.1063/1.2128064 (3 pages) | Cited 27 times

Online Publication Date: 31 October 2005

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p type doping of polycrystalline ZnO thin films, by implantation of arsenic ions, is demonstrated. The approach consisted of carrying out the implantations at liquid-nitrogen temperature ( ∼ −196 °C), followed by a rapid in situ heating of the sample, at 560 °C for 10 min, and ex situ annealing at 900 °C for 45 min in flowing oxygen. p type conductivity with a hole concentration of 2.5×1013 cm−2 was obtained using this approach, following implantation of 150 keV 5×1014 As/cm2. A conventional room-temperature implantation of 1×1015 As/cm2, followed by the same ex situ annealing, resulted in n type conductivity with a carrier concentration of 1.7×1012 cm−2.
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81.05.Dz II-VI semiconductors
61.72.uj III-V and II-VI semiconductors
61.80.Jh Ion radiation effects
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.82.Fk Semiconductors
73.61.Ga II-VI semiconductors
61.72.Cc Kinetics of defect formation and annealing
73.50.Dn Low-field transport and mobility; piezoresistance

Direct electron- and hole-spin relaxation measurements in undoped piezoelectric CdTe quantum wells

H. Rahimpour Soleimani, S. Cronenberger, M. Gallart, P. Gilliot, J. Cibert, O. Crégut, B. Hönerlage, and J.-P. Likforman

Appl. Phys. Lett. 87, 192104 (2005); http://dx.doi.org/10.1063/1.2126146 (3 pages) | Cited 3 times

Online Publication Date: 2 November 2005

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Two heavy-hole exciton transitions sharing a common electronic energy level in the conduction band are used in a pump-probe transmission experiment to determine the spin relaxation time of both electrons and holes. In contrast with previous studies, we find that the hole spin relaxes more slowly than the electron spin.
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73.21.Fg Quantum wells
73.63.Hs Quantum wells
75.75.-c Magnetic properties of nanostructures
77.65.-j Piezoelectricity and electromechanical effects
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
71.35.-y Excitons and related phenomena
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.20.Nr Semiconductor compounds
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

High electron mobility of 0.1 cm2 V−1 s−1 in the highly ordered columnar phase of hexahexylthiotriphenylene

Hiroaki Iino, Yukiko Takayashiki, Jun-ichi Hanna, Richard J. Bushby, and Dietrich Haarer

Appl. Phys. Lett. 87, 192105 (2005); http://dx.doi.org/10.1063/1.2128066 (3 pages) | Cited 20 times

Online Publication Date: 2 November 2005

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Negative charge carrier transport has been investigated in the columnar mesophases of 2,3,6,7,10,11-hexahexylthiotriphenylene (HHTT), (the best-known conducting discotic liquid crystal because of its high bulk hole mobility) using the time-of-flight method. It was shown that fast electron transport takes place in the highly ordered helical columnar phase. The electron mobility was 0.08 cm2 V−1 s−1 at 45 °C, which was the same as the hole mobility reported previously. Electron transport was also observed in the lower-order columnar hexagonal phase, but an additional slow transit appeared in the transient photocurrents, suggesting ionic transport originating from ionized impurities.
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72.20.Fr Low-field transport and mobility; piezoresistance
61.30.-v Liquid crystals
72.40.+w Photoconduction and photovoltaic effects
66.10.Ed Ionic conduction
61.72.up Other materials

Measurement of Zn0.95Cd0.05O/ZnO (0001) heterojunction band offsets by x-ray photoelectron spectroscopy

Jau-Jiun Chen, F. Ren, Yuanjie Li, D. P. Norton, S. J. Pearton, A. Osinsky, J. W. Dong, P. P. Chow, and J. F. Weaver

Appl. Phys. Lett. 87, 192106 (2005); http://dx.doi.org/10.1063/1.2128477 (3 pages) | Cited 14 times

Online Publication Date: 3 November 2005

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X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band (ΔEv) of Zn0.95Cd0.05O/ZnO heterostructures grown by rf plasma-enhanced molecular-beam epitaxy. A value of ΔEv = 0.17±0.03 eV was obtained by using the Zn 2p energy level as a reference. Given the experimental band gap of 2.9 eV for the Zn0.95Cd0.05O, this would indicate a conduction band offset ΔEC of 0.30 eV in this system.
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73.20.At Surface states, band structure, electron density of states
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Efficient spin relaxation in InGaN/GaN and InGaN/GaMnN quantum wells: An obstacle to spin detection

W. M. Chen, I. A. Buyanova, K. Nishibayashi, K. Kayanuma, K. Seo, A. Murayama, Y. Oka, G. Thaler, R. Frazier, C. R. Abernathy, F. Ren, S. J. Pearton, C.-C. Pan, G.-T. Chen, and J.-I. Chyi

Appl. Phys. Lett. 87, 192107 (2005); http://dx.doi.org/10.1063/1.2125125 (3 pages) | Cited 7 times

Online Publication Date: 3 November 2005

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Transient magneto-optical spectroscopy of InGaN/GaN and InGaN/GaMnN quantum wells reveals a spin relaxation process with a characteristic time of 50 ps. We show that the observed spin relaxation is mediated by spin flips of individual carriers rather than by direct exciton spin flips, and is proposed to occur near the bottom of the exciton band (K = 0). Nearly complete thermalization between spin sublevels of the excitons, observed immediately after the pulsed photoexcitation, is attributed to even faster spin relaxation of photogenerated hot carriers/excitons accompanying momentum and energy relaxation at high K vectors.
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72.25.Dc Spin polarized transport in semiconductors
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
73.50.Fq High-field and nonlinear effects
73.21.Fg Quantum wells
78.20.Ls Magneto-optical effects

Up conversion from visible to ultraviolet in bulk ZnO implanted with Tm ions

T. Monteiro, A. J. Neves, M. J. Soares, M. C. Carmo, M. Peres, E. Alves, and E. Rita

Appl. Phys. Lett. 87, 192108 (2005); http://dx.doi.org/10.1063/1.2128491 (2 pages) | Cited 6 times

Online Publication Date: 3 November 2005

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We report on the up-converted ultraviolet near-band edge emission of bulk ZnO generated by visible and ultraviolet photons with energies below the band gap. This up-converted photoluminescence was observed in samples intentionally doped with Tm ions, suggesting that the energy levels introduced by the rare earth ion in the ZnO band gap are responsible for this process.
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78.55.Et II-VI semiconductors
61.72.uj III-V and II-VI semiconductors
61.80.Jh Ion radiation effects
78.40.Ha Other nonmetallic inorganics

The effect of excimer laser pretreatment on diffusion and activation of boron implanted in silicon

E. V. Monakhov, B. G. Svensson, M. K. Linnarsson, A. La Magna, M. Italia, V. Privitera, G. Fortunato, M. Cuscunà, and L. Mariucci

Appl. Phys. Lett. 87, 192109 (2005); http://dx.doi.org/10.1063/1.2126144 (3 pages) | Cited 5 times

Online Publication Date: 3 November 2005

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We have investigated the effect of excimer laser annealing (ELA) on transient enhanced diffusion (TED) and activation of boron implanted in Si during subsequent rapid thermal annealing (RTA). It is observed that ELA with partial melting of the implanted region causes reduction of TED in the region that remains solid during ELA, where the diffusion length of boron is reduced by a factor of ∼ 4 as compared to the as-implanted sample. This is attributed to several mechanisms such as liquid-state annealing of a fraction of the implantation induced defects, introduction of excess vacancies during ELA, and solid-state annealing of the defects beyond the maximum melting depth by the heat wave propagating into the Si wafer. The ELA pretreatment provides a substantially improved electrical activation of boron during subsequent RTA.
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81.05.Cy Elemental semiconductors
61.72.Cc Kinetics of defect formation and annealing
61.72.uf Ge and Si
66.30.J- Diffusion of impurities
61.72.J- Point defects and defect clusters
61.82.Fk Semiconductors
61.80.Jh Ion radiation effects

Dynamic redistribution of the electric field of the channel in AlGaN/GaN high electron mobility transistor with nanometer-scale gate length

S. A. Vitusevich, S. V. Danylyuk, A. M. Kurakin, N. Klein, H. Lüth, M. V. Petrychuk, and A. E. Belyaev

Appl. Phys. Lett. 87, 192110 (2005); http://dx.doi.org/10.1063/1.2128067 (3 pages)

Online Publication Date: 3 November 2005

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Transport peculiarities and the physical origin of noise properties in AlGaN/GaN-based high electron mobility transistors (HEMTs) with a large ratio of channel length to gate length were investigated. Dependence of deviations of low-frequency noise spectra from the 1/f law on applied gate voltages was studied in an extended range of frequencies. The behavior is explained in terms of a model based on the dynamic redistribution of the electric field along the two-dimensional channel of the HEMT. The results show that the main contribution to the noise originates from the region under the gate and adjacent to the gate channel regions.
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85.30.Tv Field effect devices

Dislocation loops in silicon-germanium alloys: The source of interstitials

R. T. Crosby, K. S. Jones, M. E. Law, L. Radic, P. E. Thompson, and J. Liu

Appl. Phys. Lett. 87, 192111 (2005); http://dx.doi.org/10.1063/1.2123389 (3 pages) | Cited 1 time

Online Publication Date: 3 November 2005

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The relationships between extended defect evolution and boron diffusion in Si0.77Ge0.23 have been investigated. A SiGe structure was grown by molecular beam epitaxy with a 3×1018 atoms/cm3 boron marker layer positioned 0.50 μm below the surface. Samples were ion implanted with 60 keV Si+ at a dose of 1×1014 atoms/cm2 and subsequently annealed at 750 °C for various times. The evolution of extended defects in the near surface region was monitored with plan-view transmission electron microscopy. Secondary ion mass spectroscopy concentration profiles facilitated the characterization of boron diffusion. Boron experiences transient enhanced diffusion regulated by the dissolution of dislocation loops. The maximum diffusion enhancement in Si0.77Ge0.23 is less than that observed in pure Si.
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81.05.Hd Other semiconductors
61.72.Lk Linear defects: dislocations, disclinations
61.72.J- Point defects and defect clusters
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.up Other materials
61.72.S- Impurities in crystals
66.30.Lw Diffusion of other defects
66.30.J- Diffusion of impurities
61.72.Nn Stacking faults and other planar or extended defects
61.72.Cc Kinetics of defect formation and annealing
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.37.Lp Transmission electron microscopy (TEM)
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

Influence of dislocations in strained Si/relaxed SiGe layers on n+/p-junctions in a metal-oxide-semiconductor field-effect transistor technology

Geert Eneman, Eddy Simoen, Romain Delhougne, Peter Verheyen, Roger Loo, and Kristin De Meyer

Appl. Phys. Lett. 87, 192112 (2005); http://dx.doi.org/10.1063/1.2128490 (3 pages) | Cited 6 times

Online Publication Date: 4 November 2005

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We present an investigation of junction leakage in highly doped n+/p-junctions, fabricated in strained silicon/relaxed SiGe substrates. The leakage is shown to scale linearly with the threading dislocation density of the virtual substrate, which allows to estimate minority carrier generation lifetimes in good agreement with literature values. Even the highest-defective substrates in this work give a junction leakage density below 100 mA/cm2, and are not expected to significantly increase the power consumption of metal-oxide-semiconductor field-effect transistor (MOSFET) technologies. Threading dislocations will increase the junction leakage by ∼ 1 nA in a small number of transistors in MOSFET circuits, but are not expected to have a negative impact on yield.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Tv Field effect devices
61.72.Mm Grain and twin boundaries
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Photovoltaic operation up to 270 K of a strain-compensated AlAs/In0.84Ga0.16As/AlAs/InAlAs quantum well infrared photodetector

K. T. Lai, S. K. Haywood, A. H. Mohamed, M. Missous, and R. Gupta

Appl. Phys. Lett. 87, 192113 (2005); http://dx.doi.org/10.1063/1.2130379 (3 pages) | Cited 2 times

Online Publication Date: 4 November 2005

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We report operation up to 270 K of a strain-compensated AlAs/In0.84Ga0.16As/AlAs/In0.52Al0.48As double barrier quantum well infrared photodetector, grown on an InP substrate. The n = 1 to n = 2 intersubband transition gives a peak detection wavelength of 2.09 μm at 77 K which is in good agreement with the calculated value for a 3 nm quantum well. The conduction band discontinuity between In0.52Al0.48As and In0.84Ga0.16As is calculated to be 0.675 eV, which offers the possibility of room temperature operation for optimized detectors.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Si3N4 single-crystal nanowires grown from silicon micro- and nanoparticles near the threshold of passive oxidation

J. Farjas, Chandana Rath, A. Pinyol, P. Roura, and E. Bertran

Appl. Phys. Lett. 87, 192114 (2005); http://dx.doi.org/10.1063/1.2130380 (3 pages) | Cited 11 times

Online Publication Date: 4 November 2005

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A simple and most promising oxide-assisted catalyst-free method is used to prepare silicon nitride nanowires that give rise to high yield in a short time. After a brief analysis of the state of the art, we reveal the crucial role played by the oxygen partial pressure: when oxygen partial pressure is slightly below the threshold of passive oxidation, a high yield inhibiting the formation of any silica layer covering the nanowires occurs and thanks to the synthesis temperature one can control nanowire dimensions.
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81.07.Bc Nanocrystalline materials
81.05.Hd Other semiconductors
81.16.Pr Micro- and nano-oxidation
81.65.Mq Oxidation

Field emission at 10 V cm−1 with surface emission cathodes on negative-electron-affinity insulators

M. W. Geis, S. Deneault, K. E. Krohn, M. Marchant, T. M. Lyszczarz, and D. L. Cooke

Appl. Phys. Lett. 87, 192115 (2005); http://dx.doi.org/10.1063/1.2130382 (3 pages) | Cited 11 times

Online Publication Date: 4 November 2005

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Surface emission cathodes reported here consist of two electrodes separated by ∼ 10 μm on a negative-electron-affinity glass, Cs2Si4O9. The electrodes consist of a W film suspended over the insulator by a gap of 0–70 nm. When electron emission is initiated with a bias of 0–300 V, between the electrodes, the cathodes continue to emit after the bias is removed and for anode voltages as low as 20 V, electric fields <10 Vcm−1. The emission is modeled by the electrons tunneling from the electrode onto the glass surface and from there they are emitted into vacuum. Emission without bias is the result of positive charge in the insulator, which replaces the need for a bias voltage.
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79.70.+q Field emission, ionization, evaporation, and desorption
73.40.Gk Tunneling
72.80.Sk Insulators

Suppression of ferromagnetism due to hole doping in Zn1−xCrxTe grown by molecular-beam epitaxy

N. Ozaki, I. Okabayashi, T. Kumekawa, N. Nishizawa, S. Marcet, S. Kuroda, and K. Takita

Appl. Phys. Lett. 87, 192116 (2005); http://dx.doi.org/10.1063/1.2130387 (3 pages) | Cited 26 times

Online Publication Date: 4 November 2005

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Electric and magnetic properties were investigated on p-type Zn1−xCrxTe doped with nitrogen (N) as an acceptor. Thin films of p-Zn1−xCrxTe (x≦0.09) were grown by molecular-beam epitaxy with the supply of N2 gas excited by rf plasma. With the increase of Cr composition x at an almost fixed N concentration of the order of 1020 cm−3, the temperature dependence of resistivity changed from metallic behavior to an insulating one, accompanied with a significant decrease of the hole concentration. The magnetization measurements revealed that ferromagnetic behaviors observed in undoped Zn1−xCrxTe were suppressed due to the nitrogen doping; with N concentrations of the order of 1020 cm−3, hysteresis loops in the magnetization curve disappeared, the magnitude of magnetization decreased, and the ferromagnetic transition were not observed down to 2 K according to the Arrott plot analysis. These experimental findings are discussed on the basis of the ferromagnetic double exchange interaction which is considered to work on the Cr 3d impurity level formed in the band gap of ZnTe.
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75.50.Pp Magnetic semiconductors
73.61.Ga II-VI semiconductors
61.72.uj III-V and II-VI semiconductors
61.72.S- Impurities in crystals
75.50.Dd Nonmetallic ferromagnetic materials
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
71.70.Gm Exchange interactions
75.30.Et Exchange and superexchange interactions
71.55.Gs II-VI semiconductors
71.20.Nr Semiconductor compounds

Gallium nitride surface quantum wells

J. F. Muth, X. Zhang, A. Cai, D. Fothergill, J. C. Roberts, P. Rajagopal, J. W. Cook, E. L. Piner, and K. J. Linthicum

Appl. Phys. Lett. 87, 192117 (2005); http://dx.doi.org/10.1063/1.2123396 (3 pages) | Cited 8 times

Online Publication Date: 4 November 2005

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Surface quantum-well emission has been observed from GaN-capped AlGaN/GaN heterostructures grown by metalorganic chemical vapor deposition. The GaN cap, which forms the surface quantum well, is confined on one side by the vacuum level and on the other side by the AlGaN barrier layer. Photoluminescence at room temperature and cathodoluminescence studies show a strong emission peak corresponding to the lowest bound state of the surface quantum well and a correlation was made to the shift in surface quantum-well emission energy and the thickness of the GaN capping layer, which was varied from ∼ 15 to 40 Å. The efficient surface quantum-well emission is indicative of low surface recombination velocities even without any surface passivation.
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81.07.St Quantum wells
81.05.Ea III-V semiconductors
68.47.Fg Semiconductor surfaces
78.55.Cr III-V semiconductors
73.21.Fg Quantum wells
73.63.Hs Quantum wells
78.67.De Quantum wells
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.60.Hk Cathodoluminescence, ionoluminescence
73.25.+i Surface conductivity and carrier phenomena
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