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4 Jul 2005

Volume 87, Issue 1, Articles (01xxxx)

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Appl. Phys. Lett. 87, 013110 (2005); http://dx.doi.org/10.1063/1.1977187 (3 pages)

R. C. Wang, C. P. Liu, J. L. Huang, S.-J. Chen, Y.-K. Tseng, and S.-C. Kung
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Formation and characterization of nanometer scale metal-oxide-semiconductor structures on GaAs using low-temperature atomic layer deposition

P. D. Ye, G. D. Wilk, E. E. Tois, and Jian Jim Wang

Appl. Phys. Lett. 87, 013501 (2005); http://dx.doi.org/10.1063/1.1954902 (3 pages) | Cited 10 times

Online Publication Date: 27 June 2005

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Atomic layer deposition (ALD) grown Al2O3 has excellent bulk and interface properties on III-V compound semiconductors and is used as gate dielectric for GaAs and GaN metal-oxide-semiconductor field-effect transistors (MOSFETs). The low-temperature (LT) ALD technology enables us to fabricate 100 nm MOS structures on GaAs, defined by nanoimprint lithography. The electrical characterization of these nanostructured dielectrics demonstrates that the bulk oxide films and the oxide-GaAs interfaces are of high quality even in nanometer scale. The submicron gate length GaAs MOSFET formed by LT-ALD and lift-off process shows well-behaved transistor characteristics. This GaAs MOSFET process is ready to scale the gate length below 100 nm for ultra-high-speed or THz transistor applications.
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81.07.Bc Nanocrystalline materials
81.16.Nd Micro- and nanolithography
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.05.Ea III-V semiconductors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices
68.55.A- Nucleation and growth
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.

Effect of compressive strain relaxation in GaN blue light-emitting diodes with variation of n+‐GaN thickness on its device performance

Chi Sun Kim, Hyung Gu Kim, Chang-Hee Hong, and Hyung Koun Cho

Appl. Phys. Lett. 87, 013502 (2005); http://dx.doi.org/10.1063/1.1938254 (3 pages) | Cited 8 times

Online Publication Date: 28 June 2005

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The effects of compressive strain relaxation with increasing n‐GaN thickness on device performances of GaN blue light-emitting diodes (LEDs) were investigated. It was found that the compressive strain relaxation in LEDs with thicker n‐GaN occurred more considerably, following by the growth of active layer and p‐GaN, and generated many stacking faults right beneath the InGaN active layer, which might be related to a decrease of the LED output power. On the contrary, the LED photoluminescence intensity increased surprisingly with n‐GaN thickness. It was understood that the compressive strain relaxation enhanced localized states in InGaN wells.
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85.60.Jb Light-emitting devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Microfluidic gating of an organic electrochemical transistor

Jeffrey T. Mabeck, John A. DeFranco, Daniel A. Bernards, George G. Malliaras, Sandrine Hocdé, and Christopher J. Chase

Appl. Phys. Lett. 87, 013503 (2005); http://dx.doi.org/10.1063/1.1991979 (3 pages) | Cited 26 times

Online Publication Date: 29 June 2005

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A microfluidic-based organic electrochemical transistor is reported. The integrated microfluidic channel not only confines and directs the flow of liquid electrolyte over the active layer of the transistor but also provides the gate electrode for the transistor. The active layer employed in this work is poly(3, 4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS), which results in a transistor that is inherently “on” but that can be turned “off” through application of a positive gate voltage. The transistor behavior is understood in terms of an electrochemical mechanism and is shown to depend on the ionic strength of the electrolyte. The applicability of the device to microfluidic-based chemical and biological sensing is discussed.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
85.30.Tv Field effect devices
82.47.Rs Electrochemical sensors

High-performance polymer light-emitting diodes utilizing modified Al cathode

Tzung-Fang Guo, Fuh-Shun Yang, Zen-Jay Tsai, Ten-Chin Wen, Sung-Nien Hsieh, and Yaw-Shyan Fu

Appl. Phys. Lett. 87, 013504 (2005); http://dx.doi.org/10.1063/1.1984101 (3 pages) | Cited 29 times

Online Publication Date: 30 June 2005

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We report an increase of electroluminescence (EL) efficiency by two orders of magnitude for poly(2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylene vinylene) (MEH-PPV) based polymer light-emitting diodes (PLED) while employing Al as the cathode with an ultrathin layer of poly(ethylene oxide) (PEO). EL efficiencies of MEH-PPV PLEDs biased at 10 mA were found to be 0.017 cd/A at 31 cd/m2, 1.50 cd/A at 2515 cd/m2, and 4.96 cd/A at 8416 cd/m2 for applying Al, PEO/Al, and PEO/LiF/Al as the device cathodes, respectively. The significant improvement in the device performance is attributed to the promotion of minority carrier injection (electrons), where the threshold of the injection can be characterized through the deviation of Fowler–Nordhiem tunneling prediction.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence

Crossover from capacitive to pseudoinductive charge-relaxation in organic∕polymeric light-emitting diodes

F. A. Castro, P. R. Bueno, C. F. O. Graeff, F. Nüesch, L. Zuppiroli, L. F. Santos, and R. M. Faria

Appl. Phys. Lett. 87, 013505 (2005); http://dx.doi.org/10.1063/1.1993770 (3 pages) | Cited 11 times

Online Publication Date: 30 June 2005

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In this work we propose a phenomenological microscopic approach to deal with pseudoinductive charge-relaxation processes (named also as negative capacitance phenomena) in organic molecules (tris-8-hydroxyquinoline-aluminum) and polymeric [poly(2-metoxy-5-(2′-etil-hexiloxy)-1,4-phenylene vinylene)] light-emitting diodes (OLEDs and PLEDs, respectively). The approach is based mainly on the fact that the recombination rate is higher than the slower carrier transit time to reach the recombination zone. The approach is supported by the fact that in both PLEDs and OLEDs, the strong pseudoinductive relaxation process was mainly observed when electron-hole recombination takes place, suggesting this is a recombination dependent phenomenon. Besides, the negative branch, in the real part of the complex capacitance representation as a function of the frequency, was not observed in PLED homopolar devices.
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85.60.Jb Light-emitting devices

Tunable electroluminescent color for 2, 5-diphenyl -1, 4-distyrylbenzene with two trans-double bonds

Gang Cheng, Yingfang Zhang, Yi Zhao, Shiyong Liu, Zengqi Xie, Hong Xia, Muddasir Hanif, and Yuguang Ma

Appl. Phys. Lett. 87, 013506 (2005); http://dx.doi.org/10.1063/1.1994950 (3 pages) | Cited 9 times

Online Publication Date: 1 July 2005

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Exciplex emission is observed in electroluminescent (EL) spectrum of an organic light-emitting device (OLED), where 2, 5-diphenyl -1, 4-distyrylbenzene with two trans-double bonds (trans-DPDSB), (8-hydroxyquinoline) aluminum, and N,N′-diphenyl-N,N′-bis(1-naphthyl)-(1,1′-biphenyl)-4,4′-diamine (NPB) are used as light-emitting, electron-transporting, and hole-transporting layers, respectively. This emission can be dramatically weakened by inserting a hole-injecting layer of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonic acid) between the hole-transporting layer and the anode. Consequently, EL color of this OLED is tuned from white to blue. This phenomenon may result from the improvement of hole injection, which shifts the major recombination zone from the NPB/trans-DPDSB interface to the trans-DPDSB layer.
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85.60.Jb Light-emitting devices
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