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4 Jul 2005

Volume 87, Issue 1, Articles (01xxxx)

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Appl. Phys. Lett. 87, 013110 (2005); http://dx.doi.org/10.1063/1.1977187 (3 pages)

R. C. Wang, C. P. Liu, J. L. Huang, S.-J. Chen, Y.-K. Tseng, and S.-C. Kung
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Effects of focal volume and spatial inhomogeneity on uncertainty in single-aerosol laser-induced breakdown spectroscopy measurements

G. A. Lithgow and S. G. Buckley

Appl. Phys. Lett. 87, 011501 (2005); http://dx.doi.org/10.1063/1.1984086 (3 pages) | Cited 8 times

Online Publication Date: 27 June 2005

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Particle location with respect to the plasma volume and the focal volume of the collection optics is identified as an important source of uncertainty in single-aerosol laser-induced breakdown spectroscopy (LIBS) measurements. Two sets of optics were used to image different regions of a LIBS plasma and simultaneously collect spectra from single particles. Strong variation and lack of correlation between the two measurement channels suggest that emission from a single particle is localized within the plasma. Measurement precision and detection efficiency were improved by imaging a larger plasma region, thus integrating the spatially distributed signal.
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements
82.80.Dx Analytical methods involving electronic spectroscopy
82.70.Rr Aerosols and foams
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Measurements of dioxygen fluoride (O2F) in an atmospheric pressure plasma jet

Yongho Kim, Jaeyoung Park, Louis A. Rosocha, Hilary L. Teslow, and Hans W. Herrmann

Appl. Phys. Lett. 87, 011502 (2005); http://dx.doi.org/10.1063/1.1968420 (3 pages) | Cited 3 times

Online Publication Date: 28 June 2005

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When etching tantalum with a coaxial-cylinder-type atmospheric pressure plasma jet (APPJ) in a He/CF4/O2 gas mixture, we found that the etch rates vary little with the distance between the plasma region and the substrate. Etch rates decrease by less than a factor of 3 when the distance increases from 0.3 to 20.3 cm in a closed tube that carries the APPJ effluent. These results indicate that reactive species may last up to 40 ms in the effluent. Ultraviolet absorption spectroscopy was employed to measure possible reactive species, specifically dioxygen fluoride (O2F) and ozone (O3), in a parallel-plate type APPJ. O2F was found to be a significantly long-lived species, lasting up to 10 ms in the effluent with a constant density of about 1015 cm−3. Using a measured O3 density profile, the concentration of atomic fluorine (F) was estimated to be about 1013 cm−3, which is two orders of magnitude lower than that of O2F at a distance of 1 cm away from the APPJ exit. In summary, F atoms produced inside the APPJ combine with O2 molecules, producing O2F molecules, which can live long enough to reach and possibly etch metal surfaces.
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.77.Bn Etching and cleaning
52.50.Dg Plasma sources
82.33.Xj Plasma reactions (including flowing afterglow and electric discharges)

Transient observation of extended x-ray absorption fine structure in laser-melted Si by using femtosecond laser-produced-plasma soft x ray

Katsuya Oguri, Yasuaki Okano, Tadashi Nishikawa, and Hidetoshi Nakano

Appl. Phys. Lett. 87, 011503 (2005); http://dx.doi.org/10.1063/1.1989445 (3 pages) | Cited 10 times

Online Publication Date: 1 July 2005

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We have demonstrated the time-resolved measurement of the extended x-ray absorption fine structure (EXAFS) in laser-melted Si foil by using a pump-probe absorption spectroscopy system that utilizes a femtosecond laser-produced-plasma soft x-ray source. By using 100-fs laser irradiation, we observed the transient change in the Si L-edge EXAFS, that is, a slight shortening of its oscillation period and a decrease in its oscillation amplitude. This result suggests that the Si-Si atomic distance expanded and structural disordering occurred as a result of the production of liquid Si.
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78.70.Dm X-ray absorption spectra
78.47.-p Spectroscopy of solid state dynamics
78.40.Fy Semiconductors
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Fk Semiconductors
42.62.-b Laser applications
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
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