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4 Jul 2005

Volume 87, Issue 1, Articles (01xxxx)

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Appl. Phys. Lett. 87, 013110 (2005); http://dx.doi.org/10.1063/1.1977187 (3 pages)

R. C. Wang, C. P. Liu, J. L. Huang, S.-J. Chen, Y.-K. Tseng, and S.-C. Kung
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Patterning of hydrogenated microcrystalline silicon growth by magnetic field

A. Fejfar, J. Stuchlík, T. Mates, M. Ledinský, S. Honda, and J. Kočka

Appl. Phys. Lett. 87, 011901 (2005); http://dx.doi.org/10.1063/1.1984102 (3 pages) | Cited 2 times

Online Publication Date: 27 June 2005

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A way of influencing growth of silicon films by magnetic field is demonstrated. Permanent magnet(s) placed under the substrate influenced the discharge in a mixture of silane and hydrogen and led to formation of microcrystalline regions in otherwise amorphous film. The pattern of microcrystalline regions varied with the orientation of the magnetic field. Microscopic study by atomic force microscopy and by micro-Raman spectroscopy revealed that the microcrystalline regions resulted from a higher density of crystalline grain nuclei, increased at the locations where the magnetron effect could be expected. This phenomenon could be used to study the transition between amorphous and microcrystalline growth. Moreover, we suggest it as a kind of “magnetic lithography” for the preparation of predefined microcrystalline patterns in otherwise amorphous silicon films.
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81.05.Cy Elemental semiconductors
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.66.Db Elemental semiconductors and insulators
78.30.Am Elemental semiconductors and insulators
52.77.Dq Plasma-based ion implantation and deposition
68.37.Ps Atomic force microscopy (AFM)
68.35.B- Structure of clean surfaces (and surface reconstruction)

Study of fluorine behavior in silicon by selective point defect injection

M. N. Kham, H. A. W. El Mubarek, J. M. Bonar, and P. Ashburn

Appl. Phys. Lett. 87, 011902 (2005); http://dx.doi.org/10.1063/1.1984094 (3 pages) | Cited 4 times

Online Publication Date: 27 June 2005

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This letter reports a point defect injection study of 185 keV 2.3×1015 cm−2 fluorine implanted silicon. After an inert anneal at 1000 °C, fluorine peaks are seen at depths of 0.3Rp and Rp and a shoulder between 0.5–0.7Rp. The shallow peak (at 0.3Rp) is significantly smaller under interstitial injection than under both inert and vacancy injection conditions. For a longer anneal under interstitial injection, both the shallow peak and the shoulder are eliminated. These results support earlier work suggesting that the shallow fluorine peak is due to vacancy-fluorine clusters which are responsible for suppression of boron thermal diffusion in silicon. The elimination of the shallow fluorine peak and the shoulder is explained by the annihilation of vacancies in the clusters with injected interstitials.
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81.05.Cy Elemental semiconductors
61.72.uf Ge and Si
61.72.Cc Kinetics of defect formation and annealing
61.72.J- Point defects and defect clusters

Optical study of disorder and defects in hydrogenated amorphous silicon carbon alloys

Th. Nguyen-Tran, V. Suendo, and P. Roca i Cabarrocas

Appl. Phys. Lett. 87, 011903 (2005); http://dx.doi.org/10.1063/1.1968413 (3 pages) | Cited 4 times

Online Publication Date: 28 June 2005

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We have studied the defect density and disorder in hydrogenated amorphous silicon carbon alloys produced by rf glow discharge of silane-methane-hydrogen mixtures, by combining spectroscopic ellipsometry and photothermal deflection spectroscopy measurements. Increasing the methane flow rate leads to a widening of the optical gap and to an increase of the apparent disorder, deduced from the standard analysis of the exponential absorption edge; the so-called Urbach energy. Interestingly, the subgap absorption decreases with increasing methane flow rate. This points towards a lower density of defects with increasing carbon content and is in contrast with the increased disorder. This apparent contradiction results from the presence of three absorption bands within the gap of this material, as reported by [ Ivashchenko et al., J. Phys.: Condens. Matter 14, 1799 (2002) ], and which make unreliable the standard analysis of the disorder in silicon carbon alloys.
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78.40.Fy Semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Jg Amorphous semiconductors; glasses
82.80.Kq Energy-conversion spectro-analytical methods (e.g., photoacoustic, photothermal, and optogalvanic spectroscopic methods)

Electronic properties of N- and C-doped TiO2

Jung-Yup Lee, Jaewon Park, and Jun-Hyung Cho

Appl. Phys. Lett. 87, 011904 (2005); http://dx.doi.org/10.1063/1.1991982 (3 pages) | Cited 74 times

Online Publication Date: 29 June 2005

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We present first-principles density-functional calculations for the electronic properties of nitrogen(N)-doped as well as carbon(C)-doped titanium dioxide (TiO2). We find that the bands originating from N (C) 2p states appear in the band gap of TiO2, but the mixing of N (C) with O 2p states is too weak to produce a significant band-gap narrowing. Our results are consistent with several recent experimental data of N-doped TiO2, where the absorption of visible light is due to isolated N 2p states above the valence-band maximum of TiO2 rather than due to a band-gap narrowing.
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71.20.Ps Other inorganic compounds
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
78.40.Ha Other nonmetallic inorganics

Surface oxide reduction and bilayer molecular assembly of a thiol-terminated organosilane on Cu

P. G. Ganesan, A. Kumar, and G. Ramanath

Appl. Phys. Lett. 87, 011905 (2005); http://dx.doi.org/10.1063/1.1968414 (3 pages) | Cited 11 times

Online Publication Date: 29 June 2005

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We demonstrate the use of thiol-terminated organosilane to reduce the surface oxide and form a protective layer on Cu surfaces. The thiol termini of mercapto-propyl-trimethoxy-silane molecules reduce the copper oxide, and release disulfide- and sulfonate-terminated silanes. Unreacted mercaptosilanes and disulfides then assemble on the clean Cu surface forming a monolayer via chemisorption. The outward pointing methoxy groups react with other methoxysilane termini of sulfonated- and unreacted organosilanes, forming a molecular bilayer with Si–O–Si linkages between the two layers. These findings open up new possibilities for surface cleaning and passivating Cu interconnects with molecular nanolayers, and minimize surface-scattering-induced conductivity decrease in nanometer-thick Cu lines, without destructively etching the surface Cu oxide.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
68.43.Mn Adsorption kinetics
81.65.-b Surface treatments
82.30.-b Specific chemical reactions; reaction mechanisms

Coherent epitaxial growth and superhardness effects of c‐TiN/h‐TiB2 nanomultilayers

Fanghua Mei, Nan Shao, Lun Wei, Yunshan Dong, and Geyang Li

Appl. Phys. Lett. 87, 011906 (2005); http://dx.doi.org/10.1063/1.1951047 (3 pages) | Cited 11 times

Online Publication Date: 1 July 2005

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TiN/TiB2 nanomultilayers with different TiB2 layer thicknesses were deposited by the multitarget magnetron sputtering method. Studies show that because of the template effects of the cubic TiN layer, the normally amorphous TiB2 layer crystallizes into a compact hexagonal structure when its thickness is less than 2.9 nm. As a result, the multilayers form a c‐TiN/h‐TiB2 coherent epitaxial structure with the orientation relationship of {111}TiN//{0001}TiB2, 〈110〉TiN//〈11math0〉TiB2. Correspondingly, the multilayers show a significant hardness enhancement with a maximum hardness of 46.9 GPa. Further increase in TiB2 layer thickness leads to the formation of amorphous TiB2 that blocks the coherent growth of the films, and thus the hardness of the multilayers decreases gradually.
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81.07.Bc Nanocrystalline materials
68.65.Ac Multilayers
68.35.Gy Mechanical properties; surface strains
81.15.Cd Deposition by sputtering
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.Qp Friction, tribology, and hardness
64.70.K- Solid-solid transitions
61.50.Ks Crystallographic aspects of phase transformations; pressure effects

Controlled erbium incorporation and photoluminescence of Er-doped Y2O3

Trinh Tu Van and Jane P. Chang

Appl. Phys. Lett. 87, 011907 (2005); http://dx.doi.org/10.1063/1.1984082 (3 pages) | Cited 27 times

Online Publication Date: 1 July 2005

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A high concentration of erbium doping was achieved in Y2O3 thin films on Si (100) by depositing Y2O3 alternatively with Er2O3 using radical-enhanced atomic layer deposition (ALD). Specifically, the erbium doping level was controlled by varying the ratio of Y2O3:Er2O3 cycles during deposition, and a 10:5 ratio yielded ∼ 9 at. % erbium incorporation in Y2O3, confirmed by the compositional analysis using x-ray photoelectron spectroscopy. Room-temperature photoluminescence was observed in a 320-Å Er-doped (9 at. %) Y2O3 film deposited at 350 °C. This result is very promising, since the film was fairly thin and no annealing at high temperature was needed to activate the erbium ions. This suggests that radical-enhanced ALD was able to preserve the optically active trivalent state of the erbium ion from its precursor state. The effective absorption cross section for Er3+ ions incorporated in Y2O3 was estimated to be on the order of 10−18 cm2, about three orders of magnitude larger than the direct optical absorption cross section reported for Er3+ ions in a stoichiometric SiO2 host. These results validate Y2O3 as a promising Er3+ host material and demonstrate that radical-enhanced ALD is a viable technique for synthesizing these materials.
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81.05.-t Specific materials: fabrication, treatment, testing, and analysis
68.55.A- Nucleation and growth
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
61.72.up Other materials
78.66.Nk Insulators
78.55.Hx Other solid inorganic materials
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
79.60.Dp Adsorbed layers and thin films
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