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21 Nov 2005

Volume 87, Issue 21, Articles (21xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 87, 212503 (2005); http://dx.doi.org/10.1063/1.2135394 (3 pages)

Lirong Ren, Lin Guo, Michael Wark, and Yanglong Hou
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Dynamic readout of subdiffraction-limited pit arrays with a silver superlens

Jingsong Wei and Fuxi Gan

Appl. Phys. Lett. 87, 211101 (2005); http://dx.doi.org/10.1063/1.2132079 (3 pages) | Cited 1 time

Online Publication Date: 14 November 2005

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Recent theoretical and experimental results suggested that the silver superlens could be constructed through controlling silver thin film thickness and preparation conditions, and applied in subdiffraction-limited optical imaging and optical lithography. In this work, we report another significant application of silver superlens—ultrahigh density optical data storage. With the silver superlens the subdiffraction-limited pit arrays on an optical disk are dynamically read out and the carrier-to-noise ratio can reach 25 dB for the thin film thickness of 46 nm. The readout laser power and readout velocity have little effect on the carrier-to-noise ratio. Additionally, in our experiment the silver thin film thickness needs to be controlled in the range from 20 to 80 nm.
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42.79.Vb Optical storage systems, optical disks
42.79.Bh Lenses, prisms and mirrors
42.79.Wc Optical coatings

Ultralow loss successive divisions using silicon-on-insulator microwaveguides

D. Marris, L. Vivien, D. Pascal, M. Rouvière, E. Cassan, A. Lupu, S. Laval, J. M. Fédéli, and L. El Melhaoui

Appl. Phys. Lett. 87, 211102 (2005); http://dx.doi.org/10.1063/1.2132082 (3 pages) | Cited 13 times

Online Publication Date: 14 November 2005

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The low excess loss experimental demonstration of ten successive light divisions is presented. This distribution is realized by using shallow-etched rib silicon-on-insulator waveguides with compact beam splitters and 90° turns based on total internal reflection corner mirrors. The measured excess optical loss is only 0.7 dB per division. This result is an important step in a 1 to 1024 optical distribution demonstration.
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42.79.Gn Optical waveguides and couplers
42.79.Fm Reflectors, beam splitters, and deflectors
81.65.Cf Surface cleaning, etching, patterning

Effect of Cu3Sn coatings on electromigration lifetime improvement of Cu dual-damascene interconnects

M. Y. Yan, J. O. Suh, F. Ren, K. N. Tu, A. V. Vairagar, S. G. Mhaisalkar, and Ahila Krishnamoorthy

Appl. Phys. Lett. 87, 211103 (2005); http://dx.doi.org/10.1063/1.2132536 (3 pages) | Cited 10 times

Online Publication Date: 14 November 2005

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A 20 nm thick Cu3Sn intermetallic compound overlayer on Cu interconnect surfaces was found to effectively block dominant surface diffusion paths, thus resulting in close to one order of magnitude improvement in electromigration lifetimes. This improvement may be explained on the basis of the terrace-ledge-kink model in which the supply of Cu adatoms by the dissociation of atoms from the kinks on the Cu surface steps is hindered by a stronger chemical binding of Sn atoms to the kink sites. The mode of electromigration failures seem to have changed from surface diffusion-induced void formation at the cathode via corner to interfacial and grain-boundary diffusion-induced void formation in the interconnect line.
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85.40.Ls Metallization, contacts, interconnects; device isolation
66.30.Qa Electromigration
61.72.Mm Grain and twin boundaries
61.72.Qq Microscopic defects (voids, inclusions, etc.)
68.35.Fx Diffusion; interface formation

Mercury cadmium telluride resonant-cavity-enhanced photoconductive infrared detectors

J. G. A. Wehner, C. A. Musca, R. H. Sewell, J. M. Dell, and L. Faraone

Appl. Phys. Lett. 87, 211104 (2005); http://dx.doi.org/10.1063/1.2133914 (3 pages) | Cited 7 times

Online Publication Date: 14 November 2005

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Resonant-cavity-enhanced Hg1−xCdxTe photoconductive detectors for midwave infrared wavelengths are investigated for use in multi- and hyper-spectral sensor systems. Resonant-cavity-enhanced performance is modeled, and compared with measured performance of fabricated devices. The responsivity of fabricated devices shows resonant cavity enhancement, with performance limited by surface recombination.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.30.-z Semiconductor devices

Cavity-enhanced saturable and two-photon absorption in semiconductors

Robert Herda, Tommi Hakulinen, Soile Suomalainen, and Oleg G. Okhotnikov

Appl. Phys. Lett. 87, 211105 (2005); http://dx.doi.org/10.1063/1.2133924 (3 pages) | Cited 4 times

Online Publication Date: 14 November 2005

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Two-photon and saturable absorption are studied by placing GaAs and InGaAs materials in a microcavity. We show that field enhancement occurring due to the cavity influences the threshold and dynamic range of rollover in the nonlinear response. This approach can be used in semiconductor laser mirrors with improved capabilities for self-starting passive mode locking with suppressed tendency to Q-switching instability.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.65.-k Nonlinear optics
42.55.Px Semiconductor lasers; laser diodes

Microfabricated high-finesse optical cavity with open access and small volume

M. Trupke, E. A. Hinds, S. Eriksson, E. A. Curtis, Z. Moktadir, E. Kukharenka, and M. Kraft

Appl. Phys. Lett. 87, 211106 (2005); http://dx.doi.org/10.1063/1.2132066 (3 pages) | Cited 63 times

Online Publication Date: 15 November 2005

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We present a microfabricated optical cavity, which combines a very small mode volume with high finesse. In contrast to other micro-resonators, such as microspheres, the structure we have built gives atoms and molecules direct access to the high-intensity part of the field mode, enabling them to interact strongly with photons in the cavity for the purposes of detection and quantum-coherent manipulation. Light couples directly in and out of the resonator through an optical fiber, avoiding the need for sensitive coupling optics. This renders the cavity particularly attractive as a component of a lab-on-a-chip, and as a node in a quantum network.
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42.82.Cr Fabrication techniques; lithography, pattern transfer
42.79.-e Optical elements, devices, and systems
42.86.+b Optical workshop techniques

Excitonic blue luminescence from p-LaCuOSe/n-InGaZn5O8 light-emitting diode at room temperature

Hidenori Hiramatsu, Kazushige Ueda, Hiromichi Ohta, Toshio Kamiya, Masahiro Hirano, and Hideo Hosono

Appl. Phys. Lett. 87, 211107 (2005); http://dx.doi.org/10.1063/1.2133907 (3 pages) | Cited 18 times

Online Publication Date: 15 November 2005

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A hetero p/n junction diode was fabricated by laminating an amorphous n-type InGaZn5O8 layer to a p-type LaCuOSe film epitaxially grown on a MgO (001) substrate. It exhibited a relatively sharp blue electroluminescence (EL) that peaked at ∼ 430 nm at room temperature when a forward bias voltage above 8 V was applied. The wavelength and bandwidth of the EL band agreed well with those of the excitonic photoluminescence band in LaCuOSe, which indicates that the EL band originates from the exciton in LaCuOSe. This experiment strongly suggests that layered compounds, LnCuOCh (Ln = lanthanide, Ch = chalcogen), are promising as the light-emitting layer in optoelectronic devices that operate in the blue–ultraviolet region.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence

Single longitudinal mode laser oscillation from a neodymium aluminium borate stoichiometric crystal

E. Bovero, Z. D. Luo, Y. D. Huang, A. Benayas, and D. Jaque

Appl. Phys. Lett. 87, 211108 (2005); http://dx.doi.org/10.1063/1.2133893 (3 pages) | Cited 4 times

Online Publication Date: 15 November 2005

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We report on single mode 1.06 μm laser oscillation from a 882 nm pumped NdAl3(BO3)4 stoichiometric crystal. When operating in continuous wave regime, laser slope efficiencies in excess of 50% have been obtained from a 250 μm thick cavity. Additionally, stable single mode nanosecond (2 ns) and subnanosecond (200 ps) pulses have been generated by Q-switching the microchip cavity with semiconductor saturable absorbed mirrors. In this way peak powers in excess of 500 W have been obtained while keeping single mode oscillation.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
61.66.Bi Elemental solids
61.66.Dk Alloys
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers

Algorithm for high-resolution single-shot THz measurement using in-line spectral interferometry with chirped pulses

B. Yellampalle, K. Y. Kim, G. Rodriguez, J. H. Glownia, and A. J. Taylor

Appl. Phys. Lett. 87, 211109 (2005); http://dx.doi.org/10.1063/1.2135869 (3 pages) | Cited 16 times

Online Publication Date: 16 November 2005

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Z. P. Jiang and X. C. Zhang demonstrated a single-shot THz diagnostic based on spectral encoding of a chirped optical probe pulse [ Appl. Phys. Lett. 72, 1945 (1998) ]. This technique is thought to have an inherent uncertainty principle-imposed temporal resolution limitations. In this letter, we describe a method to recover the THz field without distortions, surpassing previous resolution limitations. Our approach is based on interpreting the spectral encoding experiment as in-line spectral interferometry, analogous to Gabor’s in-line spatial holography [ D. Gabor, Nature (London) 161, 777 (1948) ]. We recover the THz field from the interferogram and the characterized probe by using Tikhonov regularization combined with lower and upper triangular decomposition.
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07.57.-c Infrared, submillimeter wave, microwave and radiowave instruments and equipment
07.60.Ly Interferometers
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.30.-d Imaging and optical processing

Screening of high-power diode laser bars by optical scanning

Tran Quoc Tien, Axel Gerhardt, Sandy Schwirzke-Schaaf, Jens W. Tomm, M. Pommiès, M. Avella, J. Jiménez, Myriam Oudart, and Julien Nagle

Appl. Phys. Lett. 87, 211110 (2005); http://dx.doi.org/10.1063/1.2135885 (3 pages) | Cited 2 times

Online Publication Date: 16 November 2005

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High-power diode laser bar arrays (808 nm) with very uniform emission properties are inspected by the laser-beam-induced current technique (LBIC). Setting the excitation energy to 50 meV below the lasing energy, we observe distinctive signatures within the LBIC scans at certain locations on the devices. After 1000 h of high-power operation, we observe degradation at exactly those positions that previously showed a characteristic LBIC signature. A cathodoluminescence analysis reveals that the quantum wells of these anomalous device sections suffer from the existence of spots with reduced luminescence efficiency. Additionally, a concomitant 2.3 meV redshift of the quantum-well cathodoluminescence spectrum is also observed. Our measurements demonstrate the efficiency of the LBIC approach as a screening tool as well as its capacity for predicting device failure well before any degradation of the emission properties is observed.
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42.55.Px Semiconductor lasers; laser diodes
07.60.Pb Conventional optical microscopes

Highly efficient fluorescence detection in picoliter volume liquid-core waveguides

Dongliang Yin, John P. Barber, Aaron R. Hawkins, and Holger Schmidt

Appl. Phys. Lett. 87, 211111 (2005); http://dx.doi.org/10.1063/1.2135378 (3 pages) | Cited 10 times

Online Publication Date: 17 November 2005

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We report loss improvement and fluorescence detection in integrated antiresonant reflecting optical waveguides with liquid cores. The minimum waveguide loss is reduced to 0.33/cm by compensating for thickness variations in the fabrication process. We demonstrate fluorescence detection from as few as 490 molecules in a 57 pl core using these optimized waveguides. We measure angular fluorescence collection factors as high as 15% per facet in good agreement with theory. This demonstrates the potential of integrated hollow-core waveguides as optical sensors for single-molecule spectroscopy.
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42.82.Et Waveguides, couplers, and arrays
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
33.50.Dq Fluorescence and phosphorescence spectra
37.20.+j Atomic and molecular beam sources and techniques

Terahertz microcavity quantum-cascade lasers

G. Fasching, A. Benz, K. Unterrainer, R. Zobl, A. M. Andrews, T. Roch, W. Schrenk, and G. Strasser

Appl. Phys. Lett. 87, 211112 (2005); http://dx.doi.org/10.1063/1.2136222 (3 pages) | Cited 19 times

Online Publication Date: 17 November 2005

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We demonstrate circular-shaped microcavity quantum-cascade lasers emitting in the THz region between 3.0 and 3.8 THz. The band structure design of the GaAs/Al0.15Ga0.85As heterostructure is based on longitudinal-optical phonon scattering for depopulation of the lower radiative state. A double metal waveguide is used to confine the whispering gallery modes in the gain medium. The threshold current density is 900 A/cm2 at 5 K. Lasing takes place in pulsed-mode operation up to a heat-sink temperature of 140 K.
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42.55.Sa Microcavity and microdisk lasers
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Mid-infrared InAs/AlGaSb superlattice quantum-cascade lasers

K. Ohtani, K. Fujita, and H. Ohno

Appl. Phys. Lett. 87, 211113 (2005); http://dx.doi.org/10.1063/1.2136428 (3 pages) | Cited 6 times

Online Publication Date: 17 November 2005

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We report on the demonstration of mid-infrared InAs/AlGaSb superlattice quantum-cascade lasers operating at 10 μm. The laser structures are grown on n-InAs (100) substrate by solid-source molecular-beam epitaxy. An InAs/AlGaSb chirped superlattice structure providing a large oscillator strength and fast carrier depopulation is employed as the active part. The observed minimum threshold current density at 80 K is 0.7 kA/cm2, and the maximum operation temperature in pulse mode is 270 K. The waveguide loss of an InAs plasmon waveguide is estimated, and the factors that determine the operation temperature are discussed.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Carrier transport and recombination in p-doped and intrinsic 1.3 μm InAs/GaAs quantum-dot lasers

I. P. Marko, N. F. Massé, S. J. Sweeney, A. D. Andreev, A. R. Adams, N. Hatori, and M. Sugawara

Appl. Phys. Lett. 87, 211114 (2005); http://dx.doi.org/10.1063/1.2135204 (3 pages) | Cited 39 times

Online Publication Date: 17 November 2005

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The radiative and nonradiative components of the threshold current in 1.3 μm, p-doped and undoped quantum-dot semiconductor lasers were studied between 20 and 370 K. The complex behavior can be explained by simply assuming that the radiative recombination and nonradiative Auger recombination rates are strongly modified by thermal redistribution of carriers between the dots. The large differences between the devices arise due to the trapped holes in the p-doped devices. These both greatly increase Auger recombination involving hole excitation at low temperatures and decrease electron thermal escape due to their Coulombic attraction. The model explains the high T0 values observed near room temperature.
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42.55.Px Semiconductor lasers; laser diodes
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
79.20.Fv Electron impact: Auger emission

Processing techniques for deoxyribonucleic acid: Biopolymer for photonics applications

Emily M. Heckman, Joshua A. Hagen, Perry P. Yaney, James G. Grote, and F. Kenneth Hopkins

Appl. Phys. Lett. 87, 211115 (2005); http://dx.doi.org/10.1063/1.2135205 (3 pages) | Cited 38 times

Online Publication Date: 17 November 2005

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Marine-based deoxyribonucleic acid (DNA), purified from waste products of the Japanese fishing industry, has recently become a material of interest in photonics applications. Using highly purified DNA, unique processing techniques developed specifically to transform the purified DNA into a biopolymer suitable for optical device fabrication are reported.
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87.80.-y Biophysical techniques (research methods)
87.14.G- Nucleic acids
87.15.-v Biomolecules: structure and physical properties

Wide-band transmittance of one-dimensional photonic crystals carved in Si3N4/SiO2 channel waveguides

D. Gerace, M. Galli, D. Bajoni, G. Guizzetti, L. C. Andreani, F. Riboli, M. Melchiorri, N. Daldosso, L. Pavesi, G. Pucker, S. Cabrini, L. Businaro, and E. Di Fabrizio

Appl. Phys. Lett. 87, 211116 (2005); http://dx.doi.org/10.1063/1.2135408 (3 pages) | Cited 4 times

Online Publication Date: 17 November 2005

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Experimental and theoretical investigations of photonic crystal (PhC) structures in silicon nitride/silicon dioxide (Si3N4/SiO2) vertical waveguiding geometry are reported. One-dimensional patterns, either periodic or with cavity layers, are carved onto the channel waveguides by using focused ion beam lithography. Broadband transmittance spectroscopy in the visible and near-infrared frequency ranges is employed to show photonic band gap behavior up to the fourth order. For structures with a cavity layer, resonant peaks appear in transmittance spectra within the photonic gaps, in agreement with theory. The results show the interest of Si3N4/SiO2-based PhC waveguides for photonics applications from the infrared up to the visible range.
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42.70.Qs Photonic bandgap materials
42.79.Gn Optical waveguides and couplers
42.82.Et Waveguides, couplers, and arrays
78.40.Ha Other nonmetallic inorganics
78.30.Hv Other nonmetallic inorganics

Extrinsic optical recombination in pentacene single crystals: Evidence of gap states

Rui He, X. Chi, Aron Pinczuk, D. V. Lang, and A. P. Ramirez

Appl. Phys. Lett. 87, 211117 (2005); http://dx.doi.org/10.1063/1.2135494 (3 pages) | Cited 12 times

Online Publication Date: 17 November 2005

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Two luminescence bands observed in pentacene single crystals with different degrees of purity are identified as due to extrinsic optical emissions. A band at 1.49 eV remains in the crystal with the highest purity. Its redshift of about 0.3 eV from the free exciton optical recombination suggests that the extrinsic transitions could involve gap states recently discovered in pentacene transistors. Absence of resonance Raman scattering when photon energies overlap the extrinsic recombination suggests that the gap states are likely due to impurities. The temperature dependence of luminescence intensities is interpreted by activated decay of excitons to radiative and nonradiative states.
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78.55.Kz Solid organic materials
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
71.35.-y Excitons and related phenomena
71.55.Ht Other nonmetals

2 μm lasing from highly thulium doped tellurite glass microsphere

Jianfeng Wu, Shibin Jiang, Tiequn Qua, Makoto Kuwata-Gonokami, and N. Peyghambarian

Appl. Phys. Lett. 87, 211118 (2005); http://dx.doi.org/10.1063/1.2132532 (3 pages) | Cited 12 times

Online Publication Date: 18 November 2005

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A single mode microsphere laser at 2 μm is demonstrated from a highly thulium doped tellurite glass microsphere. Glass samples with various doping concentrations are fabricated and characterized to choose the material with the highest pump efficiency. The laser wavelength is redshifted from the emission peak of thulium ions at 1800 nm due to the different mode distribution inside the microsphere. The laser line width (full width at half maximum) is measured as 115 MHz.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.By Design of specific laser systems
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Imaging the dissociation process of O2 background gas during pulsed laser ablation of LiNbO3

G. Epurescu, J. Siegel, J. Gonzalo, F. J. Gordillo-Vázquez, and C. N. Afonso

Appl. Phys. Lett. 87, 211501 (2005); http://dx.doi.org/10.1063/1.2135884 (3 pages) | Cited 2 times

Online Publication Date: 16 November 2005

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The dynamics and the reactivity of the plasma produced during pulsed laser ablation of LiNbO3 have been investigated. Optical emission spectroscopy combined with time-gated imaging with high spatial resolution is applied to the study of the factors that influence the plasma expansion process, the dynamics of the ejected species the influence of a background atmosphere (O2 and Ar) and the reactivity of the expanding plasma. Direct evidence for O2 dissociation occurring during expansion is presented and the temporal evolution of the spatial distribution of the dissociated O2 is studied in detail. The influence of dissociation and velocities of the ablated species on the quality of thin films grown by pulsed laser deposition are discussed.
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
82.33.Xj Plasma reactions (including flowing afterglow and electric discharges)
52.30.-q Plasma dynamics and flow
52.77.Dq Plasma-based ion implantation and deposition
81.15.Fg Pulsed laser ablation deposition
68.55.A- Nucleation and growth
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Transmission electron microscopic observation of nanoindentations made on ductile-machined silicon wafers

Jiwang Yan, Hirokazu Takahashi, Jun’ichi Tamaki, Xiaohui Gai, and Tsunemoto Kuriyagawa

Appl. Phys. Lett. 87, 211901 (2005); http://dx.doi.org/10.1063/1.2133908 (3 pages) | Cited 13 times

Online Publication Date: 14 November 2005

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Nanoindentation tests were performed on a ductile-machined silicon wafer with a Berkovich diamond indenter, and the resulting indents were examined with a transmission electron microscope. It was found that the machining-induced subsurface amorphous layer undergoes significant plastic flow, and the microstructure of the indent depends on the indentation load. At a small load ( ∼ 20 mN), most of the indented region remains to be amorphous with minor crystalline nuclei; while under a large load ( ∼ 50 mN), the amorphous phase undergoes intensive recrystallization. The understanding and utilization of this phenomenon might be useful for improving the microscopic surface properties of silicon parts produced by a ductile machining process.
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81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
81.40.Lm Deformation, plasticity, and creep
68.35.Gy Mechanical properties; surface strains
62.20.M- Structural failure of materials
62.20.Qp Friction, tribology, and hardness
62.20.F- Deformation and plasticity
61.43.-j Disordered solids

Formation of a reacted layer at the barrierless Cu(WN)/Si interface

J. P. Chu and C. H. Lin

Appl. Phys. Lett. 87, 211902 (2005); http://dx.doi.org/10.1063/1.2133911 (3 pages) | Cited 19 times

Online Publication Date: 14 November 2005

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This letter reports the formation of a reacted layer between Cu film and barrierless Si substrate during annealing. The Cu films with a minor WN phase are deposited by reactive cosputtering of Cu and W in an Ar/N2 mixture gas. After annealing at 530 °C for 1 h, a ∼ 200-nm-thick reacted layer formed at the Cu(WN)/Si interface acts as a barrier to protect the film from extensive interactions with Si. X-ray diffraction, focused ion beam, and transmission electron microscopy results confirm the presence of this layer and show this layer is mainly composed of Cu2WO4, Cu3Si, and Si2N2O. Leakage current and resistivity evaluations reveal the superior thermal reliability of Cu with a dilute amount of WN at the temperatures up to 530 °C, suggesting its potential application in the advanced barrierless metallization.
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68.55.-a Thin film structure and morphology
73.61.At Metal and metallic alloys
73.40.Ns Metal-nonmetal contacts
61.72.Cc Kinetics of defect formation and annealing
81.15.Cd Deposition by sputtering

Surfactant-mediated growth of InGaAs multiple-quantum-well lasers emitting at 2.1 μm by metalorganic vapor phase epitaxy

Tomonari Sato, Manabu Mitsuhara, Takao Watanabe, and Yasuhiro Kondo

Appl. Phys. Lett. 87, 211903 (2005); http://dx.doi.org/10.1063/1.2133920 (3 pages) | Cited 10 times

Online Publication Date: 14 November 2005

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We report on the effect of antimony surfactant on the growth of strained InGaAs multiple-quantum-well (MQW) structure by metalorganic vapor phase epitaxy and the application of the structure to buried-heterostructure (BH) lasers. For a 1.85%-strained MQW, supplying a small amount of antimony during well growth is effective in suppressing the three-dimensional growth and increasing the photoluminescence peak intensity at a wavelength of 2.09 μm. The secondary ion mass spectroscopy measurement reveals that hardly any antimony is incorporated into the wells. The fabricated BH laser has an emission wavelength of 2.103 μm under continuous-wave operation at 25 °C.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
82.70.Uv Surfactants, micellar solutions, vesicles, lamellae, amphiphilic systems, (hydrophilic and hydrophobic interactions)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Compositionally induced valence-band offset at the grain boundary of polycrystalline chalcopyrites creates a hole barrier

Clas Persson and Alex Zunger

Appl. Phys. Lett. 87, 211904 (2005); http://dx.doi.org/10.1063/1.2132537 (3 pages) | Cited 35 times

Online Publication Date: 15 November 2005

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First-principles calculations of model grain boundaries (GBs) in CuInSe2 and CaGaSe2 show that cation-terminated GBs have a valence-band offset with respect to the grain interior (GI). This offset repels holes from the GBs, thus depriving electrons there from recombination at the GB defects. Anion-terminated GBs have no such valence offset. CuGaSe2 has, in addition, a conduction-band offset at the GB/GI interface, attracting electrons to the GBs. These features explain how polycrystalline chalcopyrite solar cells could outperform their crystalline counterparts.
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71.20.Nr Semiconductor compounds
61.72.Mm Grain and twin boundaries
71.15.-m Methods of electronic structure calculations

Vibrational spectroscopy of undoped and nitrogen-doped ZnO grown by metalorganic chemical vapor deposition

N. H. Nickel, F. Friedrich, J. F. Rommeluère, and P. Galtier

Appl. Phys. Lett. 87, 211905 (2005); http://dx.doi.org/10.1063/1.2133917 (3 pages) | Cited 21 times

Online Publication Date: 15 November 2005

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Raman backscattering and Fourier transform infrared measurements were performed on undoped and nitrogen-doped ZnO. Two broad vibrational modes near 1414 and 1585 cm−1 were found that are attributed to the presence of carbon sp2 clusters. In nitrogen-doped ZnO these modes are enhanced. In addition a broad vibrational mode near 2004 cm−1 is believed to be due to Zn–H complexes. The incorporation of N results in the formation of cyano radicals NO and NNO complexes effectively lowering the N doping efficiency. Furthermore, infrared measurements revealed the presence of CO2 molecules.
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78.30.Fs III-V and II-VI semiconductors
63.20.D- Phonon states and bands, normal modes, and phonon dispersion
61.72.uj III-V and II-VI semiconductors

Monte Carlo determination of crystallite size of porous silicon from x-ray line broadening

R. J. Martín-Palma, L. Pascual, P. Herrero, and J. M. Martínez-Duart

Appl. Phys. Lett. 87, 211906 (2005); http://dx.doi.org/10.1063/1.2133923 (3 pages) | Cited 7 times

Online Publication Date: 15 November 2005

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The nanometric structure of porous silicon makes this material very suitable for its use in many different fields, including optoelectronics and biological applications. Porous silicon can be basically described as an amorphous matrix in which silicon nanocrystals are embedded. In the present work, the distribution in size of the Si grains that compose porous silicon as a function of porosity was determined based on x-ray line broadening. For this purpose, a Monte Carlo interference-function-fitting algorithm was used. The main advantage of this method is that it gives the complete particle size distribution and not just averaged values. The results from the distribution in size of porous silicon were fitted to a log normal distribution and were correlated with the corresponding photoluminescent spectra.
Show PACS
61.43.Gt Powders, porous materials
78.55.Ap Elemental semiconductors
78.55.Mb Porous materials
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
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