Photoluminescence linewidths from multiple layers of laterally self-ordered InGaAs quantum dots

Wang, Zh. M.; Mazur, Y. I.; Seydmohamadi, Sh.; Salamo, G. J.; Kissel, H.

doi:doi:10.1063/1.2131198

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Thermally driven nanomechanical deflection of hybrid nanowires

We observed thermally induced nanomechanical deflection of a hybrid inorganic nanowire (NW) synthesized by pulsed-laser deposition, the structure of which is a carbon nanotube template sandwiched by aluminum oxide and tungsten oxide thin layers. The hybrid NW was gradually bent at a specimen temperature ranging from room temperature to 800 °C, due to the different coefficients of thermal expansion of the coated layers. This mechanical deflection exhibited repeatability.

Optical matrix element in InAs/GaAs quantum dots: Dependence on quantum dot parameters

We present a theoretical analysis of the optical matrix element between the electron and hole ground states in InAs/GaAs quantum dots (QDs) modeled with a truncated pyramidal shape. We use an eight-band k∙p Hamiltonian to calculate the QD electronic structure, including strain and piezoelectric effects. The ground state optical matrix element is very sensitive to variations in both the QD size and shape. For all shapes, the matrix element initially increases with increasing dot height, as the e...

Laterally ordered multilayered arrays of InGaAs quantum dots are investigated by photoluminescence as a function of high index GaAs substrates. Different laser wavelengths are used to investigate the photoluminescence from quantum dots layer-by-layer. High optical quality is demonstrated for laterally ordered quantum dot arrays. GaAs(511)B is identified as the optimum high index substrate for growth of InGaAs/GaAs multilayered quantum dots, demonstrating strong photoluminescence with a narrow full width at half maximum linewidth of 23 meV in spite of the potential for misfit dislocations.

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KEYWORDS and PACS

Keywords

indium compounds, gallium arsenide, III-V semiconductors, semiconductor quantum dots, photoluminescence, spectral line breadth, optical materials, dislocations

PACS

78.67.Hc

Quantum dots
78.55.Cr

III-V semiconductors
42.70.Nq

Other nonlinear optical materials; photorefractive and semiconductor materials
68.65.Hb

Quantum dots (patterned in quantum wells)

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.2131198

PUBLICATION DATA

ISSN

0003-6951 (print)

1077-3118 (online)

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American Institute of Physics

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