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28 Nov 2005

Volume 87, Issue 22, Articles (22xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 87, 221108 (2005); http://dx.doi.org/10.1063/1.2137458 (3 pages)

V. Barna, S. Ferjani, A. De Luca, R. Caputo, N. Scaramuzza, C. Versace, and G. Strangi
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Surface plasmon routing along right angle bent metal strips

J.-C. Weeber, M. U. González, A.-L. Baudrion, and A. Dereux

Appl. Phys. Lett. 87, 221101 (2005); http://dx.doi.org/10.1063/1.2130393 (3 pages) | Cited 34 times

Online Publication Date: 21 November 2005

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An efficient routing of surface plasmon polaritons (SPP) is of fundamental importance in the development of SPP-based photonics. This paper reports that microgratings acting as Bragg mirrors can guide SPP along metal stripes waveguides featuring 90° bents. The measurement of the mirrors efficiency, performed by means of photon scanning tunneling microscopy, shows that bent losses as low as 1.9 dB can be achieved. Finally, we demonstrate operating SPP beamsplitters obtained by an appropriate design of the Bragg mirrors constituting elements.
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78.66.Bz Metals and metallic alloys
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
42.79.Dj Gratings
42.79.Fm Reflectors, beam splitters, and deflectors
42.79.Bh Lenses, prisms and mirrors

Large negative lateral shifts from the Kretschmann–Raether configuration with left-handed materials

Li-Gang Wang and Shi-Yao Zhu

Appl. Phys. Lett. 87, 221102 (2005); http://dx.doi.org/10.1063/1.2136225 (2 pages) | Cited 22 times

Online Publication Date: 21 November 2005

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A large negative lateral shift of a light beam reflected from the so-called Kretschmann–Raether configuration containing left-handed material is predicted due to the formation of the unusual standing wave. An analytical resonant condition is given when there is a large negative lateral shift.
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42.25.Gy Edge and boundary effects; reflection and refraction
42.70.-a Optical materials

High-efficiency polymer electrophosphorescent diodes based on an Ir (III) complex

Hong-Mei Liu, Jian He, Peng-Fei Wang, Hong-Zhi Xie, Xiao-Hong Zhang, Chun-Sing Lee, Bao-Quan Sun, and Ya-Jun Xia

Appl. Phys. Lett. 87, 221103 (2005); http://dx.doi.org/10.1063/1.2137893 (3 pages) | Cited 23 times

Online Publication Date: 22 November 2005

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Single-layer high-efficiency green electrophosphorescent light-emitting diodes were fabricated by doping an iridium complex bearing pinene group—tris(5-phenyl-10,10-dimethyl-4-aza- tricycloundeca-2,4,6-triene)Iridium(III)—into a blended host of poly(vinylcarbazole) and 2-(4-biphenylyl)-5-(4-tert-butulphenyl)-1,3,4-oxadiazol. The optimized device shows a turn-on voltage below 4 V, and a very high peak luminescent efficiency of 29.0 cd/A. Comparing with the state-of-the-art electrophosphorescent devices, the present device has a much slower decrease of efficiency with increase of current density; a high efficiency of 20.7 cd/A can still be achieved at a high current density of 150 mA/cm2 (brightness = 30 800 cd/m2).
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence

Angle-resolved transmission spectroscopy of three-dimensional photonic crystals fabricated by direct laser writing

M. Deubel, M. Wegener, S. Linden, and G. von Freymann

Appl. Phys. Lett. 87, 221104 (2005); http://dx.doi.org/10.1063/1.2137899 (3 pages) | Cited 14 times

Online Publication Date: 22 November 2005

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Oblique incidence optical transmission spectra of three-dimensional photonic crystal templates, i.e., woodpile structures, are presented. They are compared with transmission spectra calculated using a scattering-matrix approach. In addition, band-structure calculations are presented. The comparison reveals intricate details of the three-dimensional photonic band structure demonstrating the high overall sample quality.
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42.70.Qs Photonic bandgap materials
78.40.-q Absorption and reflection spectra: visible and ultraviolet
78.30.-j Infrared and Raman spectra
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.62.-b Laser applications

80-micron interaction length silicon photonic crystal waveguide modulator

Yongqiang Jiang, Wei Jiang, Lanlan Gu, Xiaonan Chen, and Ray T. Chen

Appl. Phys. Lett. 87, 221105 (2005); http://dx.doi.org/10.1063/1.2138367 (3 pages) | Cited 62 times

Online Publication Date: 22 November 2005

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An ultracompact silicon electro-optic modulator was experimentally demonstrated based on silicon photonic crystal (PhC) waveguides for the first time to our knowledge. Modulation operation was demonstrated by carrier injection into an 80 μm-long silicon PhC waveguide of a Mach-Zehnder interferometer (MZI) structure. The π phase shift driving current, Iπ, across the active region is as low as 0.15 mA, which is equivalent to a Vπ of 7.5 mV when a 50 Ω impedance-matched structure is applied. The modulation depth is 92% operating at 1567 nm.
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42.82.Et Waveguides, couplers, and arrays
42.79.Hp Optical processors, correlators, and modulators
42.70.Qs Photonic bandgap materials
42.79.Gn Optical waveguides and couplers

Direct photofabrication of refractive-index-modulated multimode optical waveguide using photosensitive sol-gel hybrid materials

Dong Jun Kang, Woo-Soo Kim, Byeong-Soo Bae, Hyun Kyu Park, and Bong Hyun Jung

Appl. Phys. Lett. 87, 221106 (2005); http://dx.doi.org/10.1063/1.2138368 (3 pages) | Cited 6 times

Online Publication Date: 22 November 2005

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Photosensitive sol-gel hybrid materials (hybrimers) exhibited a thick film property, an efficient refractive index tunability through the control of their compositions, and a high photosensitivity upon UV exposure. The materials were used for the direct photofabrication of the multimode optical waveguide (MOW) with a large core structure. Due to the outstanding optical properties of these materials, problems and complexities associated with the fabrication of MOW could be overcome, and a MOW with good propagation performance could be easily fabricated. Importantly, a propagation loss of as low as 0.13 dB cm−1 at 850 nm could be obtained.
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42.86.+b Optical workshop techniques
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
42.79.Gn Optical waveguides and couplers
42.70.Gi Light-sensitive materials

Ultrashort, high-power pulse generation from a master oscillator power amplifier based on external cavity mode locking of a quantum-dot two-section diode laser

Myoung-Taek Choi, Wangkuen Lee, Ji-Myung Kim, and Peter J. Delfyett

Appl. Phys. Lett. 87, 221107 (2005); http://dx.doi.org/10.1063/1.2137309 (3 pages) | Cited 9 times

Online Publication Date: 22 November 2005

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We investigate an external cavity curved two-section mode-locked diode laser system based on quantum-dot (QD) gain media near 1.3 μm. Pulses are generated from the external laser cavity at a 5‐GHz repetition rate and amplified using a multilayer quantum-dot semiconductor optical amplifier. The pulses are compressed with a dual-grating dispersion compensator. The shortest, near transform-limited pulses are obtained when the mode-locked pulses are positive (up) chirped. The compressed pulses are 1.2 ps in duration, with a pulse energy of 1.46 pJ, implying a peak power of 1.22 W.
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42.60.Fc Modulation, tuning, and mode locking
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Band edge and defect modes lasing due to confinement of helixed liquid crystals in cylindrical microcavities

V. Barna, S. Ferjani, A. De Luca, R. Caputo, N. Scaramuzza, C. Versace, and G. Strangi

Appl. Phys. Lett. 87, 221108 (2005); http://dx.doi.org/10.1063/1.2137458 (3 pages) | Cited 1 time

Online Publication Date: 23 November 2005

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Peculiar light emission properties have been observed in cylindrical microcavity hosting dye-doped helixed liquid crystals, which behaves as a fiber-like multidirectional distributed feedback laser. Experimental studies performed for this level of confinement show that laser action is exhibited both axially and radially, indicating a self-organized three-dimensional blue phase-like configuration. Thermal wavelength tunability was observed for both orientations emphasizing two different linear behaviors. The distributed feedback mechanism and the Q factor of the mirrorless resonant cavity result enhanced for axial stimulated emission because of the significant increase in the number of helical periods. In addition, long-lived spectrally narrow defect modes appear within the photonic band gap owing to optical phase jumps which take place in local structural defects.
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42.55.Mv Dye lasers
42.55.Tv Photonic crystal lasers and coherent effects
42.70.Qs Photonic bandgap materials
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking
42.70.Df Liquid crystals
61.30.Jf Defects in liquid crystals

Double optical tweezers for ultrasensitive force spectroscopy in microsphere Mie scattering

A. Fontes, A. A. R. Neves, W. L. Moreira, A. A. de Thomaz, L. C. Barbosa, C. L. Cesar, and A. M. de Paula

Appl. Phys. Lett. 87, 221109 (2005); http://dx.doi.org/10.1063/1.2137896 (3 pages) | Cited 9 times

Online Publication Date: 23 November 2005

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We used a double tweezers setup to perform ultrasensitive force spectroscopy and observe the forces due to light scattering in a single isolated particle. We demonstrate how to selectively couple the light to the transverse electric (TE), transverse magnetic (TM), or both TE and TM microsphere modes by means of the beam polarization and positioning, and to observe correspondent morphology-dependent resonances (MDR). The results show how the usually assumed azimuthal symmetry in the horizontal plane no longer holds because of the symmetry break caused by the beam polarization. Also, the MDR resonances can change the force values by more than 30–50%.
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37.10.Vz Mechanical effects of light on atoms, molecules, and ions
07.60.Rd Visible and ultraviolet spectrometers

Resonant scattering and second-harmonic spectroscopy of planar photonic crystal microcavities

Murray W. McCutcheon, Georg W. Rieger, Iva W. Cheung, Jeff F. Young, Dan Dalacu, Simon Frédérick, Philip J. Poole, Geof C. Aers, and Robin L. Williams

Appl. Phys. Lett. 87, 221110 (2005); http://dx.doi.org/10.1063/1.2137898 (3 pages) | Cited 27 times

Online Publication Date: 23 November 2005

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The resonant modes of two-dimensional planar photonic crystal microcavities patterned in a free-standing InP slab are probed in a novel fashion using a long working distance microscope objective to obtain cross-polarized resonant scattering and second-harmonic spectra. We show that these techniques can be used to do rapid effective assays of large arrays of microcavities that do not necessarily contain resonant light-emitting layers. The techniques are demonstrated using microcavities comprised of single missing-hole defects in hexagonal photonic crystal hosts formed with elliptically shaped holes. These cavities typically support two orthogonally polarized resonant modes, and the resonant scattering and harmonic spectra are well fitted using a coherent sum of Lorentzian functions. The well-defined coherence between the two resonant features is explained in terms of a microscopic harmonic oscillator model. The relative merits of these techniques are quantitatively compared with the more commonly used cavity-enhanced photoluminescence technique.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Qs Photonic bandgap materials
78.30.Fs III-V and II-VI semiconductors

Generation of terahertz pulses with arbitrary elliptical polarization

N. Amer, W. C. Hurlbut, B. J. Norton, Yun-Shik Lee, and T. B. Norris

Appl. Phys. Lett. 87, 221111 (2005); http://dx.doi.org/10.1063/1.2138351 (3 pages) | Cited 8 times

Online Publication Date: 23 November 2005

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We employ two different methods to generate controllable elliptical polarization of teraherz (THz) pulses. First, THz pulses are generated via optical rectification in nonlinear crystals using a pair of temporally separated and perpendicularly polarized optical pulses. The THz ellipticity is controlled by adjusting the relative time delay and polarization of the two optical pulses. We generate mixed polarization states of single-cycle THz pulses using ZnTe, and elliptically polarized multicycle THz pulses in periodically poled lithium niobate crystals. Second, we generate elliptically polarized THz pulses by making a THz “wave plate” using a combination of a wire-grid THz polarizer and a mirror to transform linearly polarized multicycle THz pulses into elliptical polarization.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.70.Mp Nonlinear optical crystals

Monolithically integrated tunable external-cavity laser diode using InP-based planar waveguide collimating lens and optical deflector

Hyun-Soo Kim, Eun-Deok Sim, Kang Ho Kim, Oh Kee Kwon, Jong-Hoi Kim, and Kwang-Ryong Oh

Appl. Phys. Lett. 87, 221112 (2005); http://dx.doi.org/10.1063/1.2132518 (3 pages)

Online Publication Date: 23 November 2005

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A lensless tunable external-cavity laser diode monolithically integrated with InP-based planar waveguide parabolic-shaped collimating lens, optical deflector, and echelle grating is proposed and demonstrated in this work. The tunable laser exhibits a total wavelength tuning range of 9.3 nm with a side mode suppression ratio of about 35 dB by adjusting the applied current of optical deflectors and phase control section.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Gn Optical waveguides and couplers
42.82.Et Waveguides, couplers, and arrays
42.79.Bh Lenses, prisms and mirrors
42.79.Ag Apertures, collimators
42.79.Fm Reflectors, beam splitters, and deflectors
42.79.Dj Gratings

Photopumped laser oscillation and charge-injected luminescence from organic semiconductor single crystals of a thiophene/phenylene co-oligomer

Musubu Ichikawa, Kiyoshi Nakamura, Masamitsu Inoue, Hiromi Mishima, Takeshi Haritani, Ryota Hibino, Toshiki Koyama, and Yoshio Taniguchi

Appl. Phys. Lett. 87, 221113 (2005); http://dx.doi.org/10.1063/1.2138361 (3 pages) | Cited 28 times

Online Publication Date: 23 November 2005

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We have demonstrated that single crystals of a thiophene/phenylene co-oligomer [α, ω-bis-biphenyl-4-yl-terthiophene (BP3T)] show interesting photonic aspects: (1) the self-waveguided amplified spontaneous light emissions with a comparable low threshold of 8 μJ/cm2 to other optimized organic solid-state laser systems, and (2) the laser oscillation based on the optical self-confinement effect in the crystals. We have also presented electroluminescence from the crystals based on bipolar injection and the crystals’ tolerance for intense current driving. These achievements strongly imply that BP3T crystals are a promising candidate for organic laser diodes.
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42.70.Jk Polymers and organics
42.70.Hj Laser materials
42.55.Px Semiconductor lasers; laser diodes
78.45.+h Stimulated emission
78.60.Fi Electroluminescence
42.60.By Design of specific laser systems

Enhanced electroluminescence and color purity in conjugated polymer with nano-porous morphology

Tae-Ho Kim, Sang Hyuk Im, and O Ok Park

Appl. Phys. Lett. 87, 221114 (2005); http://dx.doi.org/10.1063/1.2138676 (3 pages) | Cited 2 times

Online Publication Date: 23 November 2005

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The luminescent properties of conjugated polymers are seriously affected by concentration of the conjugated chains and the degree of polymer chain packing. We examined the effect of nanoporous morphology in the emitting layer of poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylene vinylene] to hope that it would prevent polymer chain packing so that effectively decrease interchain interaction caused by interchain species and aggregates. High luminance is obtained at relatively low current density since the annihilation of singlet excitons is decreased. Redshifted emission due to the interchain aggregates and excimers are also suppressed, so that the color purity of the devices is greatly improved.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
61.41.+e Polymers, elastomers, and plastics
61.43.Gt Powders, porous materials
61.46.-w Structure of nanoscale materials
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Photocatalyst activation in a pulsed low pressure discharge

A. Rousseau, O. Guaitella, L. Gatilova, F. Thevenet, C. Guillard, J. Röpcke, and G. D. Stancu

Appl. Phys. Lett. 87, 221501 (2005); http://dx.doi.org/10.1063/1.2136415 (3 pages) | Cited 10 times

Online Publication Date: 22 November 2005

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The effect of combining plasma and photocatalyst for Volatile Organic Compounds (VOC) removal was investigated in a pulsed low-pressure dc discharge. The photocatalyst was TiO2 while the VOC was acetylene (1000 ppm) diluted in dry air. The temporal evolution of C2H2 concentration was measured by Tunable Diode Laser Absorption Spectroscopy (TDLAS) in the mid-infrared region during the plasma pulse (one second). The contribution of external ultraviolet radiation and plasma exposure were quantified, both with and without a photocatalyst. The synergetic effect was clearly demonstrated.
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82.50.Hp Processes caused by visible and UV light
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
82.33.Xj Plasma reactions (including flowing afterglow and electric discharges)
82.80.Jp Activation analysis and other radiochemical methods
52.77.-j Plasma applications
52.80.-s Electric discharges
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Beneficial effects of annealing on amorphous Nb–Si thin-film thermometers

D. Querlioz, E. Helgren, D. R. Queen, F. Hellman, R. Islam, and David. J. Smith

Appl. Phys. Lett. 87, 221901 (2005); http://dx.doi.org/10.1063/1.2135380 (3 pages) | Cited 10 times

Online Publication Date: 21 November 2005

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Amorphous Nb–Si alloys have a temperature-dependent resistivity which can be tuned over many decades by controlling composition and are used for thin-film thermometers. Annealing at temperatures from 100 to 500 °C produces dramatic but easily controlled increases in resistivity, both magnitude and temperature dependence, for insulating and metallic samples with compositions ranging from 8–15 at. %Nb. A transition from metal to insulator is induced by annealing an initially metallic sample. Annealing produces thermal stability against subsequent heat treatment, allowing annealed films to be used as low-temperature thermometers even when they are cycled to temperatures as high as 500 °C. Cross-section transmission electron microscopy and energy-dispersive x-ray analysis show that the initially amorphous films develop Nb-rich clusters within an amorphous Nb-depleted matrix, explaining the observed resistivity increase.
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07.20.Dt Thermometers
61.72.Cc Kinetics of defect formation and annealing
68.37.Lp Transmission electron microscopy (TEM)

Experimental evidences for two paths in the dissolution process of B clusters in crystalline Si

D. De Salvador, E. Napolitani, G. Bisognin, A. Carnera, E. Bruno, S. Mirabella, G. Impellizzeri, and F. Priolo

Appl. Phys. Lett. 87, 221902 (2005); http://dx.doi.org/10.1063/1.2126128 (3 pages) | Cited 10 times

Online Publication Date: 21 November 2005

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We show that B clusters, produced by self-interstitial interaction with substitutional B in crystalline Si, dissolve under annealing according to two distinct paths with very different characteristic times. The two regimes generally coexist, but while the faster dissolution path is predominant for clusters formed at low B concentration (1×1019 B/cm3), the slower one is characteristic of clusters formed above the solubility limit and dominates the dissolution process at high B concentration (2×1020 B/cm3). The activation energies of both processes are characterized and discussed. It is showed that the faster path can be connected to mobile B direct emission from small clusters, while the slower path is demonstrated not to be self-interstitial limited and it is probably related to a more complex cluster dissolution process.
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64.75.-g Phase equilibria
61.72.J- Point defects and defect clusters
61.72.uf Ge and Si
61.72.Cc Kinetics of defect formation and annealing

Oxygen segregation to dislocations in GaN

M. E. Hawkridge and D. Cherns

Appl. Phys. Lett. 87, 221903 (2005); http://dx.doi.org/10.1063/1.2136224 (3 pages) | Cited 19 times

Online Publication Date: 21 November 2005

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The structure and composition of threading dislocations in GaN grown by hydride vapor phase epitaxy have been examined by electron microscopy. Transmission electron microscopy showed that the core structure of screw dislocations varied widely, alternating irregularly between open core (“nanopipe”) and closed core structures, with evidence that the equilibrium structure was a closed core configuration. A combination of electron energy loss spectroscopy and atomic resolution imaging in the scanning transmission electron microscope showed that the surfaces of nanopipes had 1.7±0.3 monolayers of nitrogen substituted by oxygen, and that closed core dislocations showed little evidence of oxygen segregation. It is argued that these results support a model where nanopipe formation is controlled by the segregation of oxygen by surface diffusion to surface pits, rather than dislocations per se. The implications for understanding the electronic properties of dislocations in GaN are discussed.
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68.37.Lp Transmission electron microscopy (TEM)
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
64.75.-g Phase equilibria
68.35.Fx Diffusion; interface formation
68.49.Jk Electron scattering from surfaces

Picosecond third-order nonlinearity of lead-oxide glasses in the infrared

Cid B. de Araújo, E. L. Falcão-Filho, A. Humeau, D. Guichaoua, G. Boudebs, and Luciana R. P. Kassab

Appl. Phys. Lett. 87, 221904 (2005); http://dx.doi.org/10.1063/1.2137457 (3 pages) | Cited 8 times

Online Publication Date: 22 November 2005

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Heavy metal-oxide glasses containing lead and bismuth were prepared, and their picosecond third-order nonlinear (NL) optical characteristics were investigated. NL refractive indices of ≈ 10−18 m2/W at 1064 nm were measured. Negligible NL absorption was verified and, as a consequence, the samples present a good factor-of-merit for photonic applications.
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42.65.-k Nonlinear optics
78.35.+c Brillouin and Rayleigh scattering; other light scattering
78.47.-p Spectroscopy of solid state dynamics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Method to determine the melting temperatures of metals under megabar shock pressures

H. Tan, C. D. Dai, L. Y. Zhang, and C. H. Xu

Appl. Phys. Lett. 87, 221905 (2005); http://dx.doi.org/10.1063/1.2043248 (3 pages) | Cited 7 times

Online Publication Date: 22 November 2005

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Based on the model that the high-pressure melting temperatures of metals approximately equal the experimentally measured interface temperatures between the metallic plate sample and the transparent window when shock- and/or release-induced melting falls into the mixed phase region, we proposed a method to determine the melting temperatures of metals under megabars of shock compression. Experiments were conducted by using the oxygen-free high-conductivity copper, and pure iron plate sample with single-crystal lithium fluoride windows. Results showed that the measured melting temperatures are in good agreement with reported theoretical calculations.
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64.70.D- Solid-liquid transitions
62.50.-p High-pressure effects in solids and liquids

HfO2 high-k dielectrics grown on (100)Ge with ultrathin passivation layers: Structure and interfacial stability

J. W. Seo, Ch. Dieker, J.-P. Locquet, G. Mavrou, and A. Dimoulas

Appl. Phys. Lett. 87, 221906 (2005); http://dx.doi.org/10.1063/1.2137897 (3 pages) | Cited 21 times

Online Publication Date: 22 November 2005

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We have investigated the growth of HfO2 thin films on (100)Ge by molecular beam epitaxy. By means of transmission electron microscopy, the structural characteristics of the films grown on clean Ge surfaces are compared with those grown on passivation layers of GeOx and GeOxNy. The interface was found to be very flat and thin, with an interfacial layer one or two monolayer thick. However, traces of Ge in the oxide have been detected when deposited on either one of the interfacial layers, which can be explained by the instability of the interfacial layers grown with an atomic oxygen/nitrogen beam, prior to the HfO2 deposition.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.Ct Interface structure and roughness
68.37.Lp Transmission electron microscopy (TEM)

Room-temperature epitaxial growth of GaN on lattice-matched ZrB2 substrates by pulsed-laser deposition

Y. Kawaguchi, J. Ohta, A. Kobayashi, and H. Fujioka

Appl. Phys. Lett. 87, 221907 (2005); http://dx.doi.org/10.1063/1.2137876 (3 pages) | Cited 23 times

Online Publication Date: 22 November 2005

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We have grown GaN films on ZrB2 substrates at room temperature (RT) by using a pulsed-laser deposition technique. Reflection high-energy electron diffraction observations have revealed that GaN growth can occur in a layer-by-layer mode, even at RT, and that the surfaces of the films are atomically flat. We found that intermixing reactions at the GaN/ZrB2 heterointerfaces, which have been the most serious problem for this structure until now, are well suppressed in the case of RT growth. Electron backscattered diffraction measurements have revealed that the tilt angle and the twist angle of the RT GaN are 0.23° and 0.24°, respectively, even for film thicknesses as low as 20 nm. The fact that RT GaN exhibits quite high crystallinity from the early stages of film growth can be attributed to the small lattice mismatch of this system.
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81.05.Ea III-V semiconductors
81.15.Fg Pulsed laser ablation deposition
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
68.49.Jk Electron scattering from surfaces
79.20.Kz Other electron-impact emission phenomena

In situ Auger electron spectroscopy studies of the growth of p-type microcrystalline silicon films on ZnO-coated glass substrates for microcrystalline silicon p-i-n solar cells

Takashi Fujibayashi and Michio Kondo

Appl. Phys. Lett. 87, 221908 (2005); http://dx.doi.org/10.1063/1.2135883 (3 pages) | Cited 1 time

Online Publication Date: 22 November 2005

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In situ Auger electron spectroscopy has been applied to investigate the growth process of hydrogenated microcrystalline Si (μc-Si:H)p layers on ZnO-coated glass substrates in plasma-enhanced chemical vapor deposition and the state of ZnO/p interface. A high hydrogen dilution induces a ZnO/p interface layer consisting of Si–O bonds to increase an induction period for the film growth and promotes a relaxation of strained Si–Si bond to result in a change in film growth mode from island to layer growth and a highly porous film for a nucleation of crystallites. Such changes in the initial growth influences a short circuit current of μc-Si:H p-i-n solar cells.
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81.05.Cy Elemental semiconductors
79.20.Fv Electron impact: Auger emission
52.77.Dq Plasma-based ion implantation and deposition
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.72.-y Defects and impurities in crystals; microstructure
84.60.Jt Photoelectric conversion
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology

Visualization of the diffusion path in the fast oxide-ion conductor Bi1.4Yb0.6O3

Masatomo Yashima and Daiju Ishimura

Appl. Phys. Lett. 87, 221909 (2005); http://dx.doi.org/10.1063/1.2137894 (3 pages) | Cited 11 times

Online Publication Date: 23 November 2005

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Accurate nuclear-density distribution of bismuth oxide solution Bi1.4Yb0.6O3 compound has been studied at 384 °C and at 738 °C by the maximum-entropy method (MEM) and MEM-based pattern fitting combined with the Rietveld method using neutron powder diffraction data. The results reveal that the oxide ions have a complicated disorder spreading over a wide area, shift to the 〈111〉 directions from the ideal fluorite position and diffuse along the 〈100〉 directions.
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66.30.H- Self-diffusion and ionic conduction in nonmetals

Elastoplastic phase field model for microstructure evolution

X. H. Guo, San-Qiang Shi, and X. Q. Ma

Appl. Phys. Lett. 87, 221910 (2005); http://dx.doi.org/10.1063/1.2138358 (3 pages) | Cited 17 times

Online Publication Date: 23 November 2005

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Success has been obtained in predicting the dynamic evolution of microstructures during phase transformation or cracking propagation by using the time-dependent phase field methodology (PFM). However, most efforts of PFM were made in the elastic regime. In this letter, stress distributions around defects such as a hole and a crack in an externally loaded two-dimensional representative volume element were investigated by a proposed phase field model that took both the elastic and plastic deformations into consideration. Good agreement was found for static cases compared to the use of finite element analysis. Therefore, the proposed phase field model provides an opportunity to study the dynamic evolution of microstructures under plastic deformation.
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81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity
64.60.-i General studies of phase transitions
64.70.K- Solid-solid transitions
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.M- Structural failure of materials
62.20.D- Elasticity
81.40.Jj Elasticity and anelasticity, stress-strain relations
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