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28 Nov 2005

Volume 87, Issue 22, Articles (22xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 87, 221108 (2005); http://dx.doi.org/10.1063/1.2137458 (3 pages)

V. Barna, S. Ferjani, A. De Luca, R. Caputo, N. Scaramuzza, C. Versace, and G. Strangi
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Scanning gate microscopy investigations on an InGaAs quantum point contact

Nobuyuki Aoki, Carlo R. Da Cunha, Richard Akis, David K. Ferry, and Yuichi Ochiai

Appl. Phys. Lett. 87, 223501 (2005); http://dx.doi.org/10.1063/1.2136408 (3 pages) | Cited 16 times

Online Publication Date: 21 November 2005

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In recent years, there has been interest in devices created on InGaAs due to the possibility of its use for spintronics. Nonetheless, this material is known for usually presenting some levels of disorder. We have used scanning gate microscopy to study the local potential for an in-plane gated InGaAs quantum point contact and succeeded in obtaining images corresponding to sites where same quantum interference conditions are maintained. Furthermore, we have visualized images of the local potential variations within the confined region near pinch-off condition.
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73.23.-b Electronic transport in mesoscopic systems
73.63.Rt Nanoscale contacts
68.37.-d Microscopy of surfaces, interfaces, and thin films

Solar-blind AlxGa1−xN-based avalanche photodiodes

Turgut Tut, Serkan Butun, Bayram Butun, Mutlu Gokkavas, HongBo Yu, and Ekmel Ozbay

Appl. Phys. Lett. 87, 223502 (2005); http://dx.doi.org/10.1063/1.2135952 (3 pages) | Cited 14 times

Online Publication Date: 21 November 2005

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We report the Metalorganic Chemical Vapor Deposition (MOCVD) growth, fabrication, and characterization of solar blind AlxGa1−xN/GaN-based avalanche photodiodes. The photocurrent voltage characteristics indicate a reproducible avalanche gain higher than 25 at a 72 V applied reverse bias. Under a 25 V reverse bias voltage, the 100 μm diameter devices had a maximum quantum efficiency of 55% and a peak responsivity of 0.11 A/W at 254 nm, and a NEP of 1.89x10−16 W/Hz1/2.
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85.60.Dw Photodiodes; phototransistors; photoresistors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
73.50.Pz Photoconduction and photovoltaic effects
72.40.+w Photoconduction and photovoltaic effects
85.30.Kk Junction diodes

Investigation of work function tuning using multiple layer metal gate electrodes stacks for complementary metal-oxide-semiconductor applications

Rashmi Jha, JaeHoon Lee, Prashant Majhi, and Veena Misra

Appl. Phys. Lett. 87, 223503 (2005); http://dx.doi.org/10.1063/1.2136425 (3 pages) | Cited 4 times

Online Publication Date: 22 November 2005

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Metal gate electrodes consisting of three layered stacks of metals are investigated for complementary metal-oxide-semiconductor device applications. It was observed that the effective work function of the entire gate electrode stack was dominated by the work function of the first metal layer (50 Å of tantalum nitride) contacting the gate dielectric. No significant difference in the effective oxide thickness was observed in devices with and without the initial tantalum nitride layer. The potential reasons for this, based on the penetration of an electron wave function from the gate electrode to the gate dielectric and gate depletion due to longer Debye length of electrons in tantalum nitride, will be discussed.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.63.-b Electronic transport in nanoscale materials and structures

Conducting polymer and hydrogenated amorphous silicon hybrid solar cells

Evan L. Williams, Ghassan E. Jabbour, Qi Wang, Sean E. Shaheen, David S. Ginley, and Eric A. Schiff

Appl. Phys. Lett. 87, 223504 (2005); http://dx.doi.org/10.1063/1.2136409 (3 pages) | Cited 19 times

Online Publication Date: 22 November 2005

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An organic-inorganic hybrid solar cell with a p-i-n stack structure has been investigated. The p-layer was a spin coated film of PEDOT:PSS [poly(3,4-ethylenedioxythiophene) poly (styrenesulfonate)]. The i-layer was hydrogenated amorphous silicon (a-Si:H), and the n-layer was microcrystalline silicon (μc-Si). The inorganic layers were deposited on top of the organic layer by the hot-wire chemical vapor deposition technique at 200 °C. These hybrid devices exhibited open circuit voltages (VOC) as large as 0.88 V and solar conversion efficiencies as large as 2.1%. Comparison of these devices with those incorporating a-SiC:H:B p-layers indicates that the organic layer is acting as an electrically ideal p-layer.
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84.60.Jt Photoelectric conversion

Flexible organic static induction transistors using pentacene thin films

Yasuyuki Watanabe and Kazuhiro Kudo

Appl. Phys. Lett. 87, 223505 (2005); http://dx.doi.org/10.1063/1.2137900 (3 pages) | Cited 21 times

Online Publication Date: 23 November 2005

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Flexible organic static induction transistors (OSITs) based on pentacene thin films are fabricated on plastic substrates and their static characteristics are measured. The basic transistor characteristics of the flexible pentacene OSITs were comparable to those of nonflexible pentacene OSITs fabricated on glass substrates. In addition, variation in the static characteristics was negligible up to a bending radius of 20 mm. These characteristics suggest the potential for the OSITs as drivers in flexible sheet displays, such as organic light-emitting transistors in which the OSITs are combined with organic light-emitting transistors.
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85.30.Tv Field effect devices

Analytical model for organic thin-film transistors operating in the subthreshold region

E. Calvetti, A. Savio, Zs. M. Kovács-Vajna, and L. Colalongo

Appl. Phys. Lett. 87, 223506 (2005); http://dx.doi.org/10.1063/1.2138788 (3 pages) | Cited 4 times

Online Publication Date: 23 November 2005

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In this letter, a mathematical model for the subthreshold current of organic thin-film transistors (OTFTs) is proposed. The model is based on the variable range hopping transport theory using the channel depletion approach as in the standard junction field-effect transistor theory. Furthermore, the model is generalized to account for the complete depletion of the organic film. It describes the OTFTs behavior in the whole subthreshold region and it is suitable for computer aided design applications.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
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