APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

28 Nov 2005

Volume 87, Issue 22, Articles (22xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 87, 221108 (2005); http://dx.doi.org/10.1063/1.2137458 (3 pages)

V. Barna, S. Ferjani, A. De Luca, R. Caputo, N. Scaramuzza, C. Versace, and G. Strangi
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Large anisotropy of ferroelectric and dielectric properties for Bi3.15Nd0.85Ti3O12 thin films deposited on Pt/Ti/SiO2/Si

C. J. Lu, Y. Qiao, Y. J. Qi, X. Q. Chen, and J. S. Zhu

Appl. Phys. Lett. 87, 222901 (2005); http://dx.doi.org/10.1063/1.2135386 (3 pages) | Cited 37 times

Online Publication Date: 21 November 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Polycrystalline Bi3.15Nd0.85Ti3O12 (BNdT) thin films of a-axis preferential orientation [α(100) = 62%] and high c-axis orientation [α(001) = 96%] were fabricated directly on Pt/Ti/SiO2/Si substrates through a sol-gel process. We observed strong dependences of ferroelectric and dielectric properties on the film orientation, with a remanent polarization 2Pr of 39 μC/cm2 and dielectric constant εr of 343 at 100 kHz in the a-axis oriented film; 2Pr of 20 μC/cm2 and εr of 331 in the film of random orientation; and 2Pr of 13 μC/cm2, εr of 218 in the highly c-axis oriented film. Furthermore, the 2Pr value of a purely a-axis-oriented BNdT film can be predicted to be ∼ 51 μC/cm2. The large anisotropy of 2Pr and εr values demonstrates that the polarization vector of BNdT is close to the a axis.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Ej Polarization and depolarization
77.22.Ch Permittivity (dielectric function)

Improved SrTiO3 thin films using oxygen relaxation technique

Peter Kr. Petrov and Neil McN. Alford

Appl. Phys. Lett. 87, 222902 (2005); http://dx.doi.org/10.1063/1.2136432 (3 pages) | Cited 8 times

Online Publication Date: 21 November 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The oxygen relaxation technique for thin-film growth is explored. In this technique, films are deposited as nanoscale multilayered structures. After the deposition of each layer, the deposition process is stopped, the sample is cooled down slowly in situ in an oxygen-rich atmosphere to a temperature of 250 °C, then it is heated up to the set deposition temperature for growth of the next layer. The results show that by using the oxygen relaxation technique, it is possible to improve the electrical properties and the microstructure of SrTiO3 films keeping the surface smooth and free from pinholes and pores. The oxygen relaxation technique is more efficient for smaller film thickness repetition.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
77.55.-g Dielectric thin films
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.16.-c Methods of micro- and nanofabrication and processing

Photovoltaic properties of (Pb,La)(Zr,Ti)O3 films with different crystallographic orientations

M. Ichiki, H. Furue, T. Kobayashi, R. Maeda, Y. Morikawa, T. Nakada, and K. Nonaka

Appl. Phys. Lett. 87, 222903 (2005); http://dx.doi.org/10.1063/1.2128479 (3 pages) | Cited 10 times

Online Publication Date: 22 November 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Photovoltaic (Pb,La)(Zr,Ti)O3 films in a layered structure of different crystallographic orientations are fabricated by an optimized metalorganic deposition method. Such films of (001) orientation exhibit a photovoltaic electrical power of approximately 20 times higher than that of random films. The anisotropic optical properties of the oriented films, including dark conductivity, photoconductivity, and photovoltaic tensor surfaces, are obtained quantitatively. These results show that the photovoltaic output current and power of the oriented films are highly improved to be equal to those of semiconductors and suitable for application in the optical sensor of microelectromechanical systems.
Show PACS
73.50.Pz Photoconduction and photovoltaic effects

Enhanced electrical properties of ferroelectric thin films by ultraviolet radiation

Neil McN. Alford, Peter Kr. Petrov, Aleksandr G. Gagarin, Andrey B. Kozyrev, Aleksandr I. Sokolov, Oleg I. Soldatenkov, and Valery A. Volpyas

Appl. Phys. Lett. 87, 222904 (2005); http://dx.doi.org/10.1063/1.2137466 (3 pages) | Cited 8 times

Online Publication Date: 22 November 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Ferroelectric films in the paraelectric phase exhibit two undesirable properties: hysteresis in the voltage-capacitance characteristics and a significant relaxation time of the capacitance. Our experiments show that suppression of both of these is achieved by using UV radiation with wavelengths corresponding to the material forbidden gap. Experimentally we also observed UV radiation induced modulation of thin film permittivity without an applied electric field. The observed phenomena are believed to have the same origin: UV light generates nonequilibrium charge carriers that screen out local electric field induced by defects and interfaces inside ferroelectric thin films and change films effective dielectric properties.
Show PACS
77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
77.80.Dj Domain structure; hysteresis
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Experimental evidence of the “dead layer” at Pt/BaTiO3 interface

X. L. Li, B. Chen, H. Y. Jing, H. B. Lu, B. R. Zhao, Z. H. Mai, and Q. J. Jia

Appl. Phys. Lett. 87, 222905 (2005); http://dx.doi.org/10.1063/1.2138808 (3 pages) | Cited 17 times

Online Publication Date: 23 November 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The Pt/BaTiO3 (BTO) interface was investigated by angle-resolved x-ray photoelectron spectroscopy and x-ray reflectivity technique. It was shown that there exists a transition layer of about 9 Å at the Pt/BTO interface with electron density lower than that of the BTO film. The transition layer shows a higher binding energy of Ba 3d than that of the bulk BTO. Moreover, neither the interdiffusion of BTO and Pt nor the oxidation of Pt near the interface had been observed. We consider that this layer is caused by “interface-induced relaxation.” This relaxation layer is believed to be the origin of the “dead layer” effect.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
79.60.Bm Clean metal, semiconductor, and insulator surfaces
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close